Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

@article{ author = { A. Papadogianni and L. Kirste and O. Bierwagen }, title = { Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 262103 } }

TY - JOUR AU - A. Papadogianni AU - L. Kirste AU - O. Bierwagen TI - Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 262103 PY - 2017/12/27

Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration

@article{ author = { Y. Manzke and J. Herfort and M. Ramsteiner }, title = { Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 245308 } }

TY - JOUR AU - Y. Manzke AU - J. Herfort AU - M. Ramsteiner TI - Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 245308 PY - 2017/12/26

Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity

@article{ author = { L. F. Lastras-Martinez and E. Cerda-Mendez and N. Ulloa-Castillo and R. Herrera-Jasso and L. E. Rodríguez-Tapia and O. Ruiz-Cigarrillo and R. Castro-Garcia and K. Biermann and P. V. Santos }, title = { Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 235306 } }

TY - JOUR AU - L. F. Lastras-Martinez AU - E. Cerda-Mendez AU - N. Ulloa-Castillo AU - R. Herrera-Jasso AU - L. E. Rodríguez-Tapia AU - O. Ruiz-Cigarrillo AU - R. Castro-Garcia AU - K. Biermann AU - P. V. Santos TI - Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 235306 PY - 2017/12/18

Mesoscopic field-effect-induced devices in depleted two-dimensional electron systems

@article{ author = { N. Bachsoliani and S. Platonov and A.D. Wieck and S. Ludwig }, title = { Mesoscopic field-effect-induced devices in depleted two-dimensional electron systems }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 064015 } }

TY - JOUR AU - N. Bachsoliani AU - S. Platonov AU - A.D. Wieck AU - S. Ludwig TI - Mesoscopic field-effect-induced devices in depleted two-dimensional electron systems JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 064015 PY - 2017/12/14

Exploring the subsurface atomic structure of the epitaxially grown phase change material Ge2Sb2Te5

@article{ author = { J. Kellner and G. Bihlmayer and V. L. Deringer and M. Liebmann and C. Pauly and A. Giussani and J. E. Boschker and R. Calarco and R. Dronskowski and M. Morgenstern }, title = { Exploring the subsurface atomic structure of the epitaxially grown phase change material Ge2Sb2Te5 }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 245408 } }

TY - JOUR AU - J. Kellner AU - G. Bihlmayer AU - V. L. Deringer AU - M. Liebmann AU - C. Pauly AU - A. Giussani AU - J. E. Boschker AU - R. Calarco AU - R. Dronskowski AU - M. Morgenstern TI - Exploring the subsurface atomic structure of the epitaxially grown phase change material Ge2Sb2Te5 JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 245408 PY - 2017/12/11

Real-time gas sensing based on optical feedback in a terahertz quantum-cascade laser

@article{ author = { T. Hagelschuer and M. Wienold and H. Richter and L. Schrottke and H. T. Grahn and H.-W. Hübers }, title = { Real-time gas sensing based on optical feedback in a terahertz quantum-cascade laser }, journal = { Optics Express }, volume = { 25 }, year = { 2017 }, pages = { 30203 } }

TY - JOUR AU - T. Hagelschuer AU - M. Wienold AU - H. Richter AU - L. Schrottke AU - H. T. Grahn AU - H.-W. Hübers TI - Real-time gas sensing based on optical feedback in a terahertz quantum-cascade laser JF - Optics Express JA - Opt. Express J1 - VL - 25 SP - 30203 PY - 2017/11/17

Generation of surface acoustic waves on doped semiconductor substrates

@article{ author = { M. Yuan and C. Hubert and S. Rauwerdink and A. Tahraoui and B von Someren and K. Biermann and P. V. Santos }, title = { Generation of surface acoustic waves on doped semiconductor substrates }, journal = { Journal of Physics D: Applied Physics }, volume = { 50 }, year = { 2017 }, pages = { 484004 } }

TY - JOUR AU - M. Yuan AU - C. Hubert AU - S. Rauwerdink AU - A. Tahraoui AU - B von Someren AU - K. Biermann AU - P. V. Santos TI - Generation of surface acoustic waves on doped semiconductor substrates JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 50 SP - 484004 PY - 2017/11/08

Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

@article{ author = { P. Vogt and O. Brandt and H. Riechert and J. Lähnemann and O. Bierwagen }, title = { Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 196001 } }

TY - JOUR AU - P. Vogt AU - O. Brandt AU - H. Riechert AU - J. Lähnemann AU - O. Bierwagen TI - Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 196001 PY - 2017/11/07

Demonstration of magneto-ratchet device using horse-shoe ballistic channels with a rough boundary

@article{ author = { V. Hortelano and H. Weidlich and W. T. Masselink and G. Mahler and Y. Takagaki }, title = { Demonstration of magneto-ratchet device using horse-shoe ballistic channels with a rough boundary }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 125005 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - W. T. Masselink AU - G. Mahler AU - Y. Takagaki TI - Demonstration of magneto-ratchet device using horse-shoe ballistic channels with a rough boundary JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 125005 PY - 2017/10/30

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

@article{ author = { Y.-T. Liou and A. Hernández-Mínguez and J. Herfort and J. M. J. Lopes and A. Tahraoui and P. V. Santos }, title = { Acousto-electric transport in MgO/ZnO-covered graphene on SiC }, journal = { Journal of Physics D: Applied Physics }, volume = { 50 }, year = { 2017 }, pages = { 464008 } }

TY - JOUR AU - Y.-T. Liou AU - A. Hernández-Mínguez AU - J. Herfort AU - J. M. J. Lopes AU - A. Tahraoui AU - P. V. Santos TI - Acousto-electric transport in MgO/ZnO-covered graphene on SiC JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 50 SP - 464008 PY - 2017/10/27

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

@article{ author = { C. B. Lim and A. Ajay and J. Lähnemann and C. Bougerol and E. Monroy }, title = { Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 125002 } }

TY - JOUR AU - C. B. Lim AU - A. Ajay AU - J. Lähnemann AU - C. Bougerol AU - E. Monroy TI - Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 125002 PY - 2017/10/26

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

@article{ author = { J. Hartmann and F. Steib and H. Zhou and J. Ledig and L. Nicolai and S. Fündling and T. Schimpke and A. Avramescu and T. Varghese and A. Trampert and M. Straßburg and H.-J. Lugauer and H.-H. Wehmann and A. Waag }, title = { Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls }, journal = { Journal of Crystal Growth }, volume = { 476 }, year = { 2017 }, pages = { 90 } }

TY - JOUR AU - J. Hartmann AU - F. Steib AU - H. Zhou AU - J. Ledig AU - L. Nicolai AU - S. Fündling AU - T. Schimpke AU - A. Avramescu AU - T. Varghese AU - A. Trampert AU - M. Straßburg AU - H.-J. Lugauer AU - H.-H. Wehmann AU - A. Waag TI - Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 476 SP - 90 PY - 2017/10/15

Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation

@article{ author = { O. Marquardt and V. M. Kaganer and P. Corfdir }, title = { Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation }, journal = { Taylor and Francis Books }, volume = { I }, year = { 2017 }, pages = { 397 } }

TY - JOUR AU - O. Marquardt AU - V. M. Kaganer AU - P. Corfdir TI - Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation JF - Taylor and Francis Books JA - J1 - VL - I SP - 397 PY - 2017/10/06

GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics

@article{ author = { M. Hilse and B. Jenichen and J. Herfort }, title = { GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics }, journal = { Novel Compound Semiconductor Nanowires: Materials, Devices and Application (Editors: F. Ishikawa and I. Buyanova, Pan Stanford Publishing) }, volume = { 1 }, year = { 2017 }, pages = { 221 } }

TY - JOUR AU - M. Hilse AU - B. Jenichen AU - J. Herfort TI - GaAs-Fe3Si Semiconductor-Ferromagnet Core-Shell Nanowires for Spintronics JF - Novel Compound Semiconductor Nanowires: Materials, Devices and Application (Editors: F. Ishikawa and I. Buyanova, Pan Stanford Publishing) JA - J1 - VL - 1 SP - 221 PY - 2017/09/30

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

@article{ author = { H. Küpers and A. Tahraoui and R. B. Lewis and S. Rauwerdink and M. Matalla and O. Krüger and F. Bastiman and H. Riechert and L. Geelhaar }, title = { Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111) }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 115003 } }

TY - JOUR AU - H. Küpers AU - A. Tahraoui AU - R. B. Lewis AU - S. Rauwerdink AU - M. Matalla AU - O. Krüger AU - F. Bastiman AU - H. Riechert AU - L. Geelhaar TI - Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111) JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 115003 PY - 2017/09/29

Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

@article{ author = { G. Calabrese and S. V. Pettersen and C. Pfüller and M. Ramsteiner and J. Grepstad and O. Brandt and L. Geelhaar and S. Fernández-Garrido }, title = { Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 425602 } }

TY - JOUR AU - G. Calabrese AU - S. V. Pettersen AU - C. Pfüller AU - M. Ramsteiner AU - J. Grepstad AU - O. Brandt AU - L. Geelhaar AU - S. Fernández-Garrido TI - Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 425602 PY - 2017/09/20

GeTe a simple compound blessed by a plethora of properties

@article{ author = { J. E. Boschker and R. Wang and R. Calarco }, title = { GeTe a simple compound blessed by a plethora of properties }, journal = { CrystEngComm }, volume = { 19 }, year = { 2017 }, pages = { 5324 } }

TY - JOUR AU - J. E. Boschker AU - R. Wang AU - R. Calarco TI - GeTe a simple compound blessed by a plethora of properties JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 19 SP - 5324 PY - 2017/09/17

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and G. Gao and L. A. Galves and Bharat Sharma and P. Corfdir and G. Calabrese and Z. de Souza Schiaber and C. Pfüller and A. Trampert and J. M. J. Lopes and O. Brandt and L. Geelhaar }, title = { Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 5213 } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - G. Gao AU - L. A. Galves AU - Bharat Sharma AU - P. Corfdir AU - G. Calabrese AU - Z. de Souza Schiaber AU - C. Pfüller AU - A. Trampert AU - J. M. J. Lopes AU - O. Brandt AU - L. Geelhaar TI - Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 5213 PY - 2017/09/13

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

@article{ author = { W.-H. Lin and U. Jahn and H. Küpers and E. Luna and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 415703 } }

TY - JOUR AU - W.-H. Lin AU - U. Jahn AU - H. Küpers AU - E. Luna AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 415703 PY - 2017/09/13

Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction

@article{ author = { V. M. Kaganer and T. Ulyanenkova and A. Benediktovitch and M. myronov and A. Ulyanenkov }, title = { Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction }, journal = { Journal of Applied Physics }, volume = { 122 }, year = { 2017 }, pages = { 105302 } }

TY - JOUR AU - V. M. Kaganer AU - T. Ulyanenkova AU - A. Benediktovitch AU - M. myronov AU - A. Ulyanenkov TI - Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 122 SP - 105302 PY - 2017/09/12

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)

@article{ author = { K. K. Sabelfeld and V. M. Kaganer and C. Pfüller and O. Brandt }, title = { Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) }, journal = { Journal of Physics D: Applied Physics }, volume = { 50 }, year = { 2017 }, pages = { 405101 } }

TY - JOUR AU - K. K. Sabelfeld AU - V. M. Kaganer AU - C. Pfüller AU - O. Brandt TI - Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 50 SP - 405101 PY - 2017/09/11

Crystal phase quantum well emission with digital control

@article{ author = { S. Assali and J. Lähnemann and T. Vu and K. D. Jöns and L. Gagliano and M. A. Verheijen and N. Akopian and E. P. A. M. Bakkers and J. E. M. Haverkort }, title = { Crystal phase quantum well emission with digital control }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 6062 } }

TY - JOUR AU - S. Assali AU - J. Lähnemann AU - T. Vu AU - K. D. Jöns AU - L. Gagliano AU - M. A. Verheijen AU - N. Akopian AU - E. P. A. M. Bakkers AU - J. E. M. Haverkort TI - Crystal phase quantum well emission with digital control JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 6062 PY - 2017/09/11

Direct imaging of delayed magneto dynamic modes induced by strain waves

@article{ author = { Michael Foerster and Ferran Macià and Nahuel Statuto and Simone Finizio and A. Hernández-Mínguez and Sergi Lendínez and P. V. Santos and Josep Fontcuberta and Joan Manel Hernàndez and Mathias Kläui and Lucia Aballe }, title = { Direct imaging of delayed magneto dynamic modes induced by strain waves }, journal = { Nature Communications }, volume = { 8 }, year = { 2017 }, pages = { 407 } }

TY - JOUR AU - Michael Foerster AU - Ferran Macià AU - Nahuel Statuto AU - Simone Finizio AU - A. Hernández-Mínguez AU - Sergi Lendínez AU - P. V. Santos AU - Josep Fontcuberta AU - Joan Manel Hernàndez AU - Mathias Kläui AU - Lucia Aballe TI - Direct imaging of delayed magneto dynamic modes induced by strain waves JF - Nature Communications JA - Nat. Commun. J1 - VL - 8 SP - 407 PY - 2017/09/01

Crescita epitassiale van der Waals per memorie a cambiamento di fase

@article{ author = { E. Zallo and R. Calarco }, title = { Crescita epitassiale van der Waals per memorie a cambiamento di fase }, journal = { Il Nuovo Saggiatore }, volume = { 33 }, year = { 2017 }, pages = { 31 } }

TY - JOUR AU - E. Zallo AU - R. Calarco TI - Crescita epitassiale van der Waals per memorie a cambiamento di fase JF - Il Nuovo Saggiatore JA - J1 - VL - 33 SP - 31 PY - 2017/08/30

Quantum dot self-assembly driven by a surfactant-induced morphological instability

@article{ author = { R. B. Lewis and P. Corfdir and H. Li and J. Herranz and C. Pfüller and O. Brandt and L. Geelhaar }, title = { Quantum dot self-assembly driven by a surfactant-induced morphological instability }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 086101 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Li AU - J. Herranz AU - C. Pfüller AU - O. Brandt AU - L. Geelhaar TI - Quantum dot self-assembly driven by a surfactant-induced morphological instability JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 086101 PY - 2017/08/24

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

@article{ author = { V. Bragaglia and A. M. Mio and R. Calarco }, title = { Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces }, journal = { AIP Advances }, volume = { 7 }, year = { 2017 }, pages = { 085113 } }

TY - JOUR AU - V. Bragaglia AU - A. M. Mio AU - R. Calarco TI - Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces JF - AIP Advances JA - AIP Adv. J1 - VL - 7 SP - 085113 PY - 2017/08/22

Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers

@article{ author = { J. Schwarzkopf and D. Braun and M. Hanke and R. Uecker and M. Schmidbauer }, title = { Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers }, journal = { Frontiers in Materials }, volume = { 4:26 }, year = { 2017 }, pages = { 1 } }

TY - JOUR AU - J. Schwarzkopf AU - D. Braun AU - M. Hanke AU - R. Uecker AU - M. Schmidbauer TI - Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers JF - Frontiers in Materials JA - Front. Mater. J1 - VL - 4:26 SP - 1 PY - 2017/08/16

Scanning tunnelling spectroscopy and manipulation of double-decker phthalocyanine molecules on a semiconductor surface

@article{ author = { Y. Pan and K. Kanisawa and N. Ishikawa and S. Fölsch }, title = { Scanning tunnelling spectroscopy and manipulation of double-decker phthalocyanine molecules on a semiconductor surface }, journal = { Journal of Physics: Condensed Matter }, volume = { 29 }, year = { 2017 }, pages = { 364001 } }

TY - JOUR AU - Y. Pan AU - K. Kanisawa AU - N. Ishikawa AU - S. Fölsch TI - Scanning tunnelling spectroscopy and manipulation of double-decker phthalocyanine molecules on a semiconductor surface JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 29 SP - 364001 PY - 2017/08/07

Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets

@article{ author = { P. Corfdir and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 045435 } }

TY - JOUR AU - P. Corfdir AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 045435 PY - 2017/07/28

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

@article{ author = { J. Bartolomé and M. Hanke and D. van Treeck and A. Trampert }, title = { Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4654 } }

TY - JOUR AU - J. Bartolomé AU - M. Hanke AU - D. van Treeck AU - A. Trampert TI - Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4654 PY - 2017/07/22

Laterally biased quantum-well infrared photodetectors operating at room temperature with low dark currents

@article{ author = { A. Guzman and R. San-Roman and R. Gargallo-Caballero and H. T. Grahn }, title = { Laterally biased quantum-well infrared photodetectors operating at room temperature with low dark currents }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 24 }, year = { 2017 }, pages = { 1900206 } }

TY - JOUR AU - A. Guzman AU - R. San-Roman AU - R. Gargallo-Caballero AU - H. T. Grahn TI - Laterally biased quantum-well infrared photodetectors operating at room temperature with low dark currents JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 24 SP - 1900206 PY - 2017/07/21

Growth of crystalline phase change materials by physical deposition methods

@article{ author = { R. Calarco and J. E. Boschker }, title = { Growth of crystalline phase change materials by physical deposition methods }, journal = { Advances in Physics }, volume = { 2 }, year = { 2017 }, pages = { 675 } }

TY - JOUR AU - R. Calarco AU - J. E. Boschker TI - Growth of crystalline phase change materials by physical deposition methods JF - Advances in Physics JA - Adv. Phys. J1 - VL - 2 SP - 675 PY - 2017/07/17

Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces

@article{ author = { L. F. Lastras-Martinez and J. Almendarez-Rodriguez and G. Flores-Rangel and N. A. Ulloa-Castillo and O. Ruiz-Cigarrillo and C. A. Ibarra-Becerra and R. Castro-Garcia and R. E. Balderas-Navarro and M. H. Oliveira, Jr. and J. M. J. Lopes }, title = { Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces }, journal = { Journal of Applied Physics }, volume = { 122 }, year = { 2017 }, pages = { 035701 } }

TY - JOUR AU - L. F. Lastras-Martinez AU - J. Almendarez-Rodriguez AU - G. Flores-Rangel AU - N. A. Ulloa-Castillo AU - O. Ruiz-Cigarrillo AU - C. A. Ibarra-Becerra AU - R. Castro-Garcia AU - R. E. Balderas-Navarro AU - M. H. Oliveira, Jr. AU - J. M. J. Lopes TI - Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 122 SP - 035701 PY - 2017/07/17

Switching of magnetic moments of nanoparticles by surface acoustic waves

@article{ author = { J. Tejada and E. M. Chudnovsky and R. Zarzuela and N. Statuto and J. Calvo-de la Rosa and P. V. Santos and A. Hernández-Mínguez }, title = { Switching of magnetic moments of nanoparticles by surface acoustic waves }, journal = { Europhysics Letters }, volume = { 118 }, year = { 2017 }, pages = { 37005 } }

TY - JOUR AU - J. Tejada AU - E. M. Chudnovsky AU - R. Zarzuela AU - N. Statuto AU - J. Calvo-de la Rosa AU - P. V. Santos AU - A. Hernández-Mínguez TI - Switching of magnetic moments of nanoparticles by surface acoustic waves JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 118 SP - 37005 PY - 2017/07/13

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

@article{ author = { J. Aberl and P. Klenovský and J. S. Wildmann and J. Martin-Sanchez and T. Fromherz and E. Zallo and J. Humlíček and A. Rastelli and R. Trotta }, title = { Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 045414 } }

TY - JOUR AU - J. Aberl AU - P. Klenovský AU - J. S. Wildmann AU - J. Martin-Sanchez AU - T. Fromherz AU - E. Zallo AU - J. Humlíček AU - A. Rastelli AU - R. Trotta TI - Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 045414 PY - 2017/07/13

Control of single photon emitters in semiconductor nanowires by surface acoustic waves

@article{ author = { S. Lazic and A. Hernández-Mínguez and P. V. Santos }, title = { Control of single photon emitters in semiconductor nanowires by surface acoustic waves }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 084002 } }

TY - JOUR AU - S. Lazic AU - A. Hernández-Mínguez AU - P. V. Santos TI - Control of single photon emitters in semiconductor nanowires by surface acoustic waves JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 084002 PY - 2017/07/11

Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy

@article{ author = { K. Berlin and A. Trampert }, title = { Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy }, journal = { Ultramicroscopy }, volume = { 178 }, year = { 2017 }, pages = { 27 } }

TY - JOUR AU - K. Berlin AU - A. Trampert TI - Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 178 SP - 27 PY - 2017/07/01

Self-limited In incorporation in (In,Ga)N/GaN short-period superlattices

@article{ author = { C. Chèze and R. Calarco }, title = { Self-limited In incorporation in (In,Ga)N/GaN short-period superlattices }, journal = { Nanoscience and Nanotechnology Letters }, volume = { 9 }, year = { 2017 }, pages = { 1118 } }

TY - JOUR AU - C. Chèze AU - R. Calarco TI - Self-limited In incorporation in (In,Ga)N/GaN short-period superlattices JF - Nanoscience and Nanotechnology Letters JA - Nanosci. Nanotechnol. Lett. J1 - ISSN: 1941-4900 (Print); EISSN: 1941-4919 (Online) VL - 9 SP - 1118 PY - 2017/07/01

The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells

@article{ author = { E. Luna and J. Puustinen and M.Wu and J. Hilska and M.Guina and A. Trampert }, title = { The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells }, journal = { Nanoscience and Nanotechnology Letters }, volume = { 9 }, year = { 2017 }, pages = { 1132 } }

TY - JOUR AU - E. Luna AU - J. Puustinen AU - M.Wu AU - J. Hilska AU - M.Guina AU - A. Trampert TI - The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells JF - Nanoscience and Nanotechnology Letters JA - Nanosci. Nanotechnol. Lett. J1 - ISSN: 1941-4900 (Print); EISSN: 1941-4919 (Online) VL - 9 SP - 1132 PY - 2017/07/01

Unconventional strain relaxation of Sb2Te3 grown on a GeTe/Sb2Te3/GeTe heterostructure on silicon (111)

@article{ author = { S. Cecchi and R. N. Wang and E. Zallo and R. Calarco }, title = { Unconventional strain relaxation of Sb2Te3 grown on a GeTe/Sb2Te3/GeTe heterostructure on silicon (111) }, journal = { Nanoscience and Nanotechnology Letters }, volume = { 9 }, year = { 2017 }, pages = { 1114 } }

TY - JOUR AU - S. Cecchi AU - R. N. Wang AU - E. Zallo AU - R. Calarco TI - Unconventional strain relaxation of Sb2Te3 grown on a GeTe/Sb2Te3/GeTe heterostructure on silicon (111) JF - Nanoscience and Nanotechnology Letters JA - Nanosci. Nanotechnol. Lett. J1 - ISSN: 1941-4900 (Print); EISSN: 1941-4919 (Online) VL - 9 SP - 1114 PY - 2017/07/01

Formation of Resonant Bonding during Growth of Ultrathin GeTe Films

@article{ author = { R. N. Wang and W. Zhang and J. Momand and I. Ronneberger and J. E. Boschker and R. Mazzarello and B. J. Kooi and H. Riechert and M. Wuttig and R. Calarco }, title = { Formation of Resonant Bonding during Growth of Ultrathin GeTe Films }, journal = { NPG Asia Materials }, volume = { 9 }, year = { 2017 }, pages = { e369 } }

TY - JOUR AU - R. N. Wang AU - W. Zhang AU - J. Momand AU - I. Ronneberger AU - J. E. Boschker AU - R. Mazzarello AU - B. J. Kooi AU - H. Riechert AU - M. Wuttig AU - R. Calarco TI - Formation of Resonant Bonding during Growth of Ultrathin GeTe Films JF - NPG Asia Materials JA - NPG Asia Mater. J1 - VL - 9 SP - e369 PY - 2017/06/30

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy

@article{ author = { B. Röben and X. Lü and M. Hempel and K. Biermann and L. Schrottke and H. T. Grahn }, title = { Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy }, journal = { Optics Express }, volume = { 25 }, year = { 2017 }, pages = { 16282 } }

TY - JOUR AU - B. Röben AU - X. Lü AU - M. Hempel AU - K. Biermann AU - L. Schrottke AU - H. T. Grahn TI - Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy JF - Optics Express JA - Opt. Express J1 - VL - 25 SP - 16282 PY - 2017/06/29

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

@article{ author = { R. B. Lewis and P. Corfdir and J. Herranz and H. Küpers and U. Jahn and O. Brandt and L. Geelhaar }, title = { Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4255 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - J. Herranz AU - H. Küpers AU - U. Jahn AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4255 PY - 2017/06/27

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

@article{ author = { M. Spies and M. I. den Hertog and P. Hille and J. Schörmann and J. Polaczyński and B. Gayral and M. Eickhoff and E. Monroy and J. Lähnemann }, title = { Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4231 } }

TY - JOUR AU - M. Spies AU - M. I. den Hertog AU - P. Hille AU - J. Schörmann AU - J. Polaczyński AU - B. Gayral AU - M. Eickhoff AU - E. Monroy AU - J. Lähnemann TI - Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4231 PY - 2017/06/14

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character

@article{ author = { O. Marquardt and M. Ramsteiner and P. Corfdir and L. Geelhaar and O. Brandt }, title = { Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character }, journal = { Physical Review B: Solid State }, volume = { 95 }, year = { 2017 }, pages = { 245309 } }

TY - JOUR AU - O. Marquardt AU - M. Ramsteiner AU - P. Corfdir AU - L. Geelhaar AU - O. Brandt TI - Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 95 SP - 245309 PY - 2017/06/13

Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices

@article{ author = { J. Momand and R. Wang and J.E. Boschker and M.A. Verheijen and R. Calarco and B.J. Kooi }, title = { Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices }, journal = { Nanoscale }, volume = { 9 }, year = { 2017 }, pages = { 8774 } }

TY - JOUR AU - J. Momand AU - R. Wang AU - J.E. Boschker AU - M.A. Verheijen AU - R. Calarco AU - B.J. Kooi TI - Dynamic reconfiguration of van der Waals gaps within GeTe–Sb2Te3 based superlattices JF - Nanoscale JA - Nanoscale J1 - 10.1039 VL - 9 SP - 8774 PY - 2017/06/12

Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and A. Kwasniewski and J. Schwarzkopf }, title = { Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 232903 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - A. Kwasniewski AU - J. Schwarzkopf TI - Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 232903 PY - 2017/06/09

GaSbBi/GaSb quantum well laser diodes

@article{ author = { O. Delorme and L. Cerutti and E. Luna and G.Narcy and A. Trampert and E. Tournie and J.-B.Rodriguez }, title = { GaSbBi/GaSb quantum well laser diodes }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 222106 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - G.Narcy AU - A. Trampert AU - E. Tournie AU - J.-B.Rodriguez TI - GaSbBi/GaSb quantum well laser diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 222106 PY - 2017/06/02

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures

@article{ author = { A.M. Mio and S. Privitera and V. Bragaglia and F. Arciprete and S. Cecchi and G. Litrico and C. Persch and R. Calarco and E. Rimini }, title = { Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures }, journal = { Scientific Reports }, volume = { 7 }, year = { 2017 }, pages = { 2616 } }

TY - JOUR AU - A.M. Mio AU - S. Privitera AU - V. Bragaglia AU - F. Arciprete AU - S. Cecchi AU - G. Litrico AU - C. Persch AU - R. Calarco AU - E. Rimini TI - Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 7 SP - 2616 PY - 2017/06/01

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

@article{ author = { A. Davtyan and T. Krause and D. Kriegner and A. Al-Hassan and D. Bahrami and S. M. M. Kashani and R. B. Lewis and H. Küpers and A. Tahraoui and L. Geelhaar and M. Hanke and S. J. Leake and O. Loffeld and U. Pietsch }, title = { Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging }, journal = { Journal of Applied Crystallography }, volume = { 50 }, year = { 2017 }, pages = { 673 } }

TY - JOUR AU - A. Davtyan AU - T. Krause AU - D. Kriegner AU - A. Al-Hassan AU - D. Bahrami AU - S. M. M. Kashani AU - R. B. Lewis AU - H. Küpers AU - A. Tahraoui AU - L. Geelhaar AU - M. Hanke AU - S. J. Leake AU - O. Loffeld AU - U. Pietsch TI - Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 50 SP - 673 PY - 2017/06/01

Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt

@article{ author = { S. Fernandez and J. Grandal and A. Trampert and F.B. Naranjo }, title = { Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt }, journal = { Materials Science in Semiconductor Processing }, volume = { 63 }, year = { 2017 }, pages = { 115 } }

TY - JOUR AU - S. Fernandez AU - J. Grandal AU - A. Trampert AU - F.B. Naranjo TI - Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt JF - Materials Science in Semiconductor Processing JA - Mater. Sci. Semicond. Process. J1 - MSSP VL - 63 SP - 115 PY - 2017/06/01

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

@article{ author = { J. Kamimura and P. Bogdanoff and F. F. Abdi and J. Lähnemann and R. van de Krol and H. Riechert and L. Geelhaar }, title = { Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte }, journal = { Journal of Physical Chemistry C }, volume = { 121 }, year = { 2017 }, pages = { 12540 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - F. F. Abdi AU - J. Lähnemann AU - R. van de Krol AU - H. Riechert AU - L. Geelhaar TI - Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 121 SP - 12540 PY - 2017/05/30

Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties

@article{ author = { M. Schmidbauer and D. Braun and T. Markurt and M. Hanke and J. Schwarzkopf }, title = { Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 24LT02 } }

TY - JOUR AU - M. Schmidbauer AU - D. Braun AU - T. Markurt AU - M. Hanke AU - J. Schwarzkopf TI - Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 24LT02 PY - 2017/05/23

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells

@article{ author = { E. Luna and R. Gargallo-Caballero and F. Ishikawa and A. Trampert }, title = { Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 201906 } }

TY - JOUR AU - E. Luna AU - R. Gargallo-Caballero AU - F. Ishikawa AU - A. Trampert TI - Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 201906 PY - 2017/05/19

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

@article{ author = { O. Marquardt and T. Krause and V. M. Kaganer and J. Martin-Sanchez and M. Hanke and O. Brandt }, title = { Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 215204 } }

TY - JOUR AU - O. Marquardt AU - T. Krause AU - V. M. Kaganer AU - J. Martin-Sanchez AU - M. Hanke AU - O. Brandt TI - Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 215204 PY - 2017/05/04

Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination

@article{ author = { M. Hempel and B. Röben and M. Niehle and L. Schrottke and A. Trampert and H. T. Grahn }, title = { Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination }, journal = { AIP Advances }, volume = { 7 }, year = { 2017 }, pages = { 055201 } }

TY - JOUR AU - M. Hempel AU - B. Röben AU - M. Niehle AU - L. Schrottke AU - A. Trampert AU - H. T. Grahn TI - Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination JF - AIP Advances JA - AIP Adv. J1 - VL - 7 SP - 055201 PY - 2017/05/04

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

@article{ author = { E. Zallo and S. Cecchi and J. E. Boschker and A.M. Mio and F. Arciprete and S. Privitera and R. Calarco }, title = { Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys }, journal = { Scientific Reports }, volume = { 7 }, year = { 2017 }, pages = { 1466 } }

TY - JOUR AU - E. Zallo AU - S. Cecchi AU - J. E. Boschker AU - A.M. Mio AU - F. Arciprete AU - S. Privitera AU - R. Calarco TI - Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 7 SP - 1466 PY - 2017/05/03

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

@article{ author = { M. Musolino and A. Tahraoui and L. Geelhaar and F. Sacconi and F. Panetta and C. De Santi and M. Meneghini and E. Zanoni }, title = { The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 044014 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - L. Geelhaar AU - F. Sacconi AU - F. Panetta AU - C. De Santi AU - M. Meneghini AU - E. Zanoni TI - The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 7 SP - 044014 PY - 2017/04/19

Laterally biased structures for room temperature operation of quantumwell infrared photodetectors

@article{ author = { A. Guzman and R. Gargallo-Caballero and X. Lü and H. T. Grahn }, title = { Laterally biased structures for room temperature operation of quantumwell infrared photodetectors }, journal = { Journal of Crystal Growth }, volume = { 477 }, year = { 2017 }, pages = { 272 } }

TY - JOUR AU - A. Guzman AU - R. Gargallo-Caballero AU - X. Lü AU - H. T. Grahn TI - Laterally biased structures for room temperature operation of quantumwell infrared photodetectors JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 477 SP - 272 PY - 2017/04/19

Creating and probing quantum dot molecules with the scanning tunneling microscope

@article{ author = { Y. Pan and K. Kanisawa and S. Fölsch }, title = { Creating and probing quantum dot molecules with the scanning tunneling microscope }, journal = { Journal of Vacuum Science and Tchnology B }, volume = { 35 }, year = { 2017 }, pages = { 04F102 } }

TY - JOUR AU - Y. Pan AU - K. Kanisawa AU - S. Fölsch TI - Creating and probing quantum dot molecules with the scanning tunneling microscope JF - Journal of Vacuum Science and Tchnology B JA - JVST B J1 - VL - 35 SP - 04F102 PY - 2017/04/10

Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3

@article{ author = { M. Schmidbauer and M. Hanke and A. Kwasniewski and D. Braun and L. von Helden and C. Feldt and S. J. Leake and J. Schwarzkopf }, title = { Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 }, journal = { Journal of Applied Crystallography }, volume = { 50 }, year = { 2017 }, pages = { 519 } }

TY - JOUR AU - M. Schmidbauer AU - M. Hanke AU - A. Kwasniewski AU - D. Braun AU - L. von Helden AU - C. Feldt AU - S. J. Leake AU - J. Schwarzkopf TI - Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 50 SP - 519 PY - 2017/03/30

Heterodyne Spectroscopy of Frequency Instabilities in Terahertz Quantum-Cascade Lasers Induced by Optical Feedback

@article{ author = { H.-W. Hübers and H. Richter and R. Eichholz and M. Wienold and K. Biermann and L. Schrottke and H. T. Grahn }, title = { Heterodyne Spectroscopy of Frequency Instabilities in Terahertz Quantum-Cascade Lasers Induced by Optical Feedback }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 23 }, year = { 2017 }, pages = { 1800306 } }

TY - JOUR AU - H.-W. Hübers AU - H. Richter AU - R. Eichholz AU - M. Wienold AU - K. Biermann AU - L. Schrottke AU - H. T. Grahn TI - Heterodyne Spectroscopy of Frequency Instabilities in Terahertz Quantum-Cascade Lasers Induced by Optical Feedback JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 23 SP - 1800306 PY - 2017/03/17

Impact of d-band filling on the dislocation properties of bcc transition metals: The case of tantalum-tungsten alloys investigated by density-functional theory

@article{ author = { H. Li and C. Draxl and S. Wurster and R. Pippan and L. Romaner }, title = { Impact of d-band filling on the dislocation properties of bcc transition metals: The case of tantalum-tungsten alloys investigated by density-functional theory }, journal = { Physical Review B: Solid State }, volume = { 95 }, year = { 2017 }, pages = { 094114 } }

TY - JOUR AU - H. Li AU - C. Draxl AU - S. Wurster AU - R. Pippan AU - L. Romaner TI - Impact of d-band filling on the dislocation properties of bcc transition metals: The case of tantalum-tungsten alloys investigated by density-functional theory JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 95 SP - 094114 PY - 2017/03/15

Electrically-pumped wavelength-tunable GaAs quantum dots interfaced with rubidium atoms

@article{ author = { H. Y. Huang and R. Trotta and Y. H. Huo and T. Lettner and J. S. Wildmann and J. Martín-Sánchez and D. Huber and M. Reindl and J. X. Zhang and E. Zallo and O. G. Schmidt and A. Rastelli }, title = { Electrically-pumped wavelength-tunable GaAs quantum dots interfaced with rubidium atoms }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 868 } }

TY - JOUR AU - H. Y. Huang AU - R. Trotta AU - Y. H. Huo AU - T. Lettner AU - J. S. Wildmann AU - J. Martín-Sánchez AU - D. Huber AU - M. Reindl AU - J. X. Zhang AU - E. Zallo AU - O. G. Schmidt AU - A. Rastelli TI - Electrically-pumped wavelength-tunable GaAs quantum dots interfaced with rubidium atoms JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 868 PY - 2017/03/15

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

@article{ author = { S. Gaucher and B. Jenichen and J. Kalt and U. Jahn and A. Trampert and J. Herfort }, title = { Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 102103 } }

TY - JOUR AU - S. Gaucher AU - B. Jenichen AU - J. Kalt AU - U. Jahn AU - A. Trampert AU - J. Herfort TI - Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 102103 PY - 2017/03/08

Supernormal hardness increase of dilute Ga(As, N) thin films

@article{ author = { J. Berggren and M. Hanke and E. Luna and A. Trampert }, title = { Supernormal hardness increase of dilute Ga(As, N) thin films }, journal = { Journal of Applied Physics }, volume = { 121 }, year = { 2017 }, pages = { 095105 } }

TY - JOUR AU - J. Berggren AU - M. Hanke AU - E. Luna AU - A. Trampert TI - Supernormal hardness increase of dilute Ga(As, N) thin films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 121 SP - 095105 PY - 2017/03/07

Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy

@article{ author = { T. Krause and M. Hanke and L. Nicolai and Z. Cheng and M. Niehle and A. Trampert and M. Kahnt and G. Falkenberg and C. Schroer and J. Hartmann and H. Zhou and H.-H. Wehmann and A. Waag }, title = { Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 024033 } }

TY - JOUR AU - T. Krause AU - M. Hanke AU - L. Nicolai AU - Z. Cheng AU - M. Niehle AU - A. Trampert AU - M. Kahnt AU - G. Falkenberg AU - C. Schroer AU - J. Hartmann AU - H. Zhou AU - H.-H. Wehmann AU - A. Waag TI - Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 7 SP - 024033 PY - 2017/02/28

Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and Inexcess by plasma assisted molecular beam epitaxy

@article{ author = { M. Sawicka and P. Wolny and M. Krysko and H. Turski and K. Szkudlarek and S. Grzanka and C. Skierbiszewski }, title = { Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and Inexcess by plasma assisted molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 465 }, year = { 2017 }, pages = { 43 } }

TY - JOUR AU - M. Sawicka AU - P. Wolny AU - M. Krysko AU - H. Turski AU - K. Szkudlarek AU - S. Grzanka AU - C. Skierbiszewski TI - Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and Inexcess by plasma assisted molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 465 SP - 43 PY - 2017/02/28

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

@article{ author = { J. M. Wofford and S. Nakhaie and T. Krause and X. Liu and M. Ramsteiner and M. Hanke and H. Riechert and J. M. J. Lopes }, title = { A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures }, journal = { Scientific Reports }, volume = { 7 }, year = { 2017 }, pages = { 43644 } }

TY - JOUR AU - J. M. Wofford AU - S. Nakhaie AU - T. Krause AU - X. Liu AU - M. Ramsteiner AU - M. Hanke AU - H. Riechert AU - J. M. J. Lopes TI - A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 7 SP - 43644 PY - 2017/02/27

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

@article{ author = { S. Cecchi and E. Zallo and J. Momand and R. N. Wang and B. J. Kooi and M. A. Verheijen and R. Calarco }, title = { Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation }, journal = { APL Materials }, volume = { 5 }, year = { 2017 }, pages = { 026107 } }

TY - JOUR AU - S. Cecchi AU - E. Zallo AU - J. Momand AU - R. N. Wang AU - B. J. Kooi AU - M. A. Verheijen AU - R. Calarco TI - Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation JF - APL Materials JA - APL Mater. J1 - APLM VL - 5 SP - 026107 PY - 2017/02/27

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

@article{ author = { J.-B. Barakat and S. Dadgostar and K. Hestroffer and O. Bierwagen and A. Trampert and F. Hatami }, title = { Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { tbd }, year = { 2017 }, pages = { tbd } }

TY - JOUR AU - J.-B. Barakat AU - S. Dadgostar AU - K. Hestroffer AU - O. Bierwagen AU - A. Trampert AU - F. Hatami TI - Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - tbd SP - tbd PY - 2017/02/22

Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and U. Jahn }, title = { Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy }, journal = { Crystal Growth & Design }, volume = { 17 }, year = { 2017 }, pages = { 1977 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn TI - Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 17 SP - 1977 PY - 2017/02/22

Controlled synthesis and characteri-zation of multilayer graphene films on the C-face of silicon carbide

@article{ author = { B. Sharma and T. Schumann and M.H. de Oliveira, Jr. and J. M. J. Lopes }, title = { Controlled synthesis and characteri-zation of multilayer graphene films on the C-face of silicon carbide }, journal = { Physica Status Solidi A }, volume = { 1600721 }, year = { 2017 }, pages = { 1 } }

TY - JOUR AU - B. Sharma AU - T. Schumann AU - M.H. de Oliveira, Jr. AU - J. M. J. Lopes TI - Controlled synthesis and characteri-zation of multilayer graphene films on the C-face of silicon carbide JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 1600721 SP - 1 PY - 2017/02/20

In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

@article{ author = { C. Chèze and F. Feix and M. Anikeeva and T. Schulz and M. Albrecht and H. Riechert and O. Brandt and R. Calarco }, title = { In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 072104 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - M. Anikeeva AU - T. Schulz AU - M. Albrecht AU - H. Riechert AU - O. Brandt AU - R. Calarco TI - In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 072104 PY - 2017/02/14

Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy

@article{ author = { C. Vogel and M. Ramsteiner and R. Sekine and A. Doolette and C. Adam }, title = { Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy }, journal = { Journal of Raman Spectroscopy }, volume = { 48 }, year = { 2017 }, pages = { 867 } }

TY - JOUR AU - C. Vogel AU - M. Ramsteiner AU - R. Sekine AU - A. Doolette AU - C. Adam TI - Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy JF - Journal of Raman Spectroscopy JA - J. Raman Spectrosc. J1 - VL - 48 SP - 867 PY - 2017/02/10

p-type doping of GaN nanowires characterized by photoelectrochemical measurements

@article{ author = { J. Kamimura and P. Bogdanoff and M. Ramsteiner and P. Corfdir and F. Feix and L. Geelhaar and H. Riechert }, title = { p-type doping of GaN nanowires characterized by photoelectrochemical measurements }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 1529 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - M. Ramsteiner AU - P. Corfdir AU - F. Feix AU - L. Geelhaar AU - H. Riechert TI - p-type doping of GaN nanowires characterized by photoelectrochemical measurements JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 1529 PY - 2017/02/06

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

@article{ author = { P.K. Patil and E. Luna and T. Matsuda and K.Yamada and K.Kamiya and F.Ishikawa and S.Shimomura }, title = { GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 105702 } }

TY - JOUR AU - P.K. Patil AU - E. Luna AU - T. Matsuda AU - K.Yamada AU - K.Kamiya AU - F.Ishikawa AU - S.Shimomura TI - GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 105702 PY - 2017/02/01

Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport

@article{ author = { I. Miccoli and J. Aprojanz and J. Baringhaus and T. Lichtenstein and L. A. Galves and J. M. J. Lopes and C. Tegenkamp }, title = { Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 051601 } }

TY - JOUR AU - I. Miccoli AU - J. Aprojanz AU - J. Baringhaus AU - T. Lichtenstein AU - L. A. Galves AU - J. M. J. Lopes AU - C. Tegenkamp TI - Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 051601 PY - 2017/01/30

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice

@article{ author = { Z. Z. Yin and H. Song and Y. H. Zhang and M. Ruiz-Garcia and M. Carretero and L. L. Bonilla and K. Biermann and H. T. Grahn }, title = { Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice }, journal = { Physical Review E: Statistical, Nonlinear, and Soft Matter Physics }, volume = { 95 }, year = { 2017 }, pages = { 012218 } }

TY - JOUR AU - Z. Z. Yin AU - H. Song AU - Y. H. Zhang AU - M. Ruiz-Garcia AU - M. Carretero AU - L. L. Bonilla AU - K. Biermann AU - H. T. Grahn TI - Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice JF - Physical Review E: Statistical, Nonlinear, and Soft Matter Physics JA - Phys. Rev. E J1 - PRE VL - 95 SP - 012218 PY - 2017/01/30

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

@article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } }

TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19

Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on conductive and insulating amorphous substrates

@article{ author = { J. E. Boschker and E. Tisbi and E. Placidi and J. Momand and B.J. Kooi and F. Arciprete and R. Calarco }, title = { Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on conductive and insulating amorphous substrates }, journal = { AIP Advances }, volume = { 7 }, year = { 2017 }, pages = { 015106 } }

TY - JOUR AU - J. E. Boschker AU - E. Tisbi AU - E. Placidi AU - J. Momand AU - B.J. Kooi AU - F. Arciprete AU - R. Calarco TI - Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on conductive and insulating amorphous substrates JF - AIP Advances JA - AIP Adv. J1 - VL - 7 SP - 015106 PY - 2017/01/19

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

@article{ author = { M. Niehle and A. Trampert and J.-B. Rodriguez and L. Cerutti and E. Tournie }, title = { Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations }, journal = { Scripta Materialia }, volume = { 132 }, year = { 2017 }, pages = { 5 } }

TY - JOUR AU - M. Niehle AU - A. Trampert AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie TI - Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations JF - Scripta Materialia JA - J1 - VL - 132 SP - 5 PY - 2017/01/18

Indirect excitons in (111) GaAs double quantum wells

@article{ author = { C. Hubert and A. Hernández-Mínguez and K. Biermann and P. V. Santos }, title = { Indirect excitons in (111) GaAs double quantum wells }, journal = { Superlattices and Microstructures }, volume = { 108 }, year = { 2017 }, pages = { 51 } }

TY - JOUR AU - C. Hubert AU - A. Hernández-Mínguez AU - K. Biermann AU - P. V. Santos TI - Indirect excitons in (111) GaAs double quantum wells JF - Superlattices and Microstructures JA - Superlattices Microstruct. J1 - SuMi VL - 108 SP - 51 PY - 2017/01/18

The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons

@article{ author = { L. A. Galves and J. M. Wofford and G. V. Soares and U. Jahn and C. Pfüller and H. Riechert and J. M. J. Lopes }, title = { The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons }, journal = { Carbon }, volume = { 115 }, year = { 2017 }, pages = { 162 } }

TY - JOUR AU - L. A. Galves AU - J. M. Wofford AU - G. V. Soares AU - U. Jahn AU - C. Pfüller AU - H. Riechert AU - J. M. J. Lopes TI - The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons JF - Carbon JA - Carbon J1 - VL - 115 SP - 162 PY - 2017/01/12

Polarity-induced selective area epitaxy of GaN nanowires

@article{ author = { Z. de Souza Schiaber and G. Calabrese and X. Kong and A. Trampert and B. Jenichen and J. H. Dias da Silva and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Polarity-induced selective area epitaxy of GaN nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 63 } }

TY - JOUR AU - Z. de Souza Schiaber AU - G. Calabrese AU - X. Kong AU - A. Trampert AU - B. Jenichen AU - J. H. Dias da Silva AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Polarity-induced selective area epitaxy of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 63 PY - 2017/01/11

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films

@article{ author = { A.M. Mio and S.M.S. Privitera and V. Bragaglia and F. Arciprete and C. Bongiorno and R. Calarco and E. Rimini }, title = { Chemical and structural arrangement of the trigonal phase in GeSbTe thin films }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 065706 1 } }

TY - JOUR AU - A.M. Mio AU - S.M.S. Privitera AU - V. Bragaglia AU - F. Arciprete AU - C. Bongiorno AU - R. Calarco AU - E. Rimini TI - Chemical and structural arrangement of the trigonal phase in GeSbTe thin films JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 065706 1 PY - 2017/01/04

Magnetic properties of GaAs-Fe3Si core-shell nanowires - A comparison of ensemble and single nanowire investigation

@article{ author = { M. Hilse and B. Jenichen and J. Herfort }, title = { Magnetic properties of GaAs-Fe3Si core-shell nanowires - A comparison of ensemble and single nanowire investigation }, journal = { AIP Advances }, volume = { 7 }, year = { 2017 }, pages = { 056305 } }

TY - JOUR AU - M. Hilse AU - B. Jenichen AU - J. Herfort TI - Magnetic properties of GaAs-Fe3Si core-shell nanowires - A comparison of ensemble and single nanowire investigation JF - AIP Advances JA - AIP Adv. J1 - VL - 7 SP - 056305 PY - 2017/01/04

Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy

@article{ author = { M. Sawicka and A. Feduniewicz-Żmuda and M. Krysko and H. Turski and G. Muziol and M. Siekacz and P. Wolny and C. Skierbiszewski }, title = { Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 459 }, year = { 2017 }, pages = { 129 } }

TY - JOUR AU - M. Sawicka AU - A. Feduniewicz-Żmuda AU - M. Krysko AU - H. Turski AU - G. Muziol AU - M. Siekacz AU - P. Wolny AU - C. Skierbiszewski TI - Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 459 SP - 129 PY - 2017/01/03

Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth

@article{ author = { R. B. Lewis and L. Nicolai and H. Küpers and M. Ramsteiner and A. Trampert and L. Geelhaar }, title = { Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 136 } }

TY - JOUR AU - R. B. Lewis AU - L. Nicolai AU - H. Küpers AU - M. Ramsteiner AU - A. Trampert AU - L. Geelhaar TI - Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 136 PY - 2017/01/01

Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires

@article{ author = { M. Kumar and G. Sarau and M. Heilmann and S. Christiansen and V. Kumar and R. Singh }, title = { Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires }, journal = { Journal of Physics D: Applied Physics }, volume = { 50 }, year = { 2017 }, pages = { 035302 } }

TY - JOUR AU - M. Kumar AU - G. Sarau AU - M. Heilmann AU - S. Christiansen AU - V. Kumar AU - R. Singh TI - Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 50 SP - 035302 PY - 2017/01/01