Acoustic field for the control of electronic excitations in semiconductor nanostructures

@article{ author = { P. V. Santos and M. Msall and S. Ludwig }, title = { Acoustic field for the control of electronic excitations in semiconductor nanostructures }, journal = { IEEE }, volume = { Proceedings of the 2018 Ultrasonic Symposium }, year = { 2018 }, pages = { 1 } }

TY - JOUR AU - P. V. Santos AU - M. Msall AU - S. Ludwig TI - Acoustic field for the control of electronic excitations in semiconductor nanostructures JF - IEEE JA - IEEE J1 - VL - Proceedings of the 2018 Ultrasonic Symposium SP - 1 PY - 2018/12/31

Resonant second-order nonlinear terahertz response of gallium arsenide

@article{ author = { A. Ghalgaoui and K. Reimann and M. Woerner and T. Elsaesser and C. Flytzanis and K. Biermann }, title = { Resonant second-order nonlinear terahertz response of gallium arsenide }, journal = { Physical Review Letters }, volume = { 121 }, year = { 2018 }, pages = { 266602 } }

TY - JOUR AU - A. Ghalgaoui AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - C. Flytzanis AU - K. Biermann TI - Resonant second-order nonlinear terahertz response of gallium arsenide JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 121 SP - 266602 PY - 2018/12/27

Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2

@article{ author = { P. Vogt and O. Bierwagen }, title = { Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 120401(R) } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 120401(R) PY - 2018/12/20

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy

@article{ author = { P. Mazzolini and P. Vogt and R. Schewski and C. Wouters and M. Albrecht and O. Bierwagen }, title = { Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022511 } }

TY - JOUR AU - P. Mazzolini AU - P. Vogt AU - R. Schewski AU - C. Wouters AU - M. Albrecht AU - O. Bierwagen TI - Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy JF - APL Materials JA - APL Mater. J1 - APLM VL - 7 SP - 022511 PY - 2018/12/14

Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

@article{ author = { M. Feneberg and C. Lidig and M.E. White and M.Y. Tsai and J.S. Speck and O. Bierwagen and Z. Galazka and R. Goldhahn }, title = { Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022508 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - M.E. White AU - M.Y. Tsai AU - J.S. Speck AU - O. Bierwagen AU - Z. Galazka AU - R. Goldhahn TI - Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift JF - APL Materials JA - APL Mater. J1 - APLM VL - 7 SP - 022508 PY - 2018/12/13

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars

@article{ author = { J. Lähnemann and D. A. Browne and A. Ajay and M. Jeannin and A. Vasanelli and J.-L. Thomassin and E. Bellet-Amalric and E. Monroy }, title = { Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars }, journal = { Nanotechnology }, volume = { 30 }, year = { 2018 }, pages = { 054002 } }

TY - JOUR AU - J. Lähnemann AU - D. A. Browne AU - A. Ajay AU - M. Jeannin AU - A. Vasanelli AU - J.-L. Thomassin AU - E. Bellet-Amalric AU - E. Monroy TI - Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 054002 PY - 2018/11/30

Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates }, journal = { Journal of Solid State Chemistry }, volume = { 270 }, year = { 2018 }, pages = { 219 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates JF - Journal of Solid State Chemistry JA - J. Solid State Chem. J1 - VL - 270 SP - 219 PY - 2018/11/29

Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys

@article{ author = { S. Cecchi and D. Dragoni and D. Kriegner and E. Tisbi and E. Zallo and F. Arciprete and V. Holý and M. Bernasconi and R. Calarco }, title = { Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys }, journal = { Advanced Functional Materials }, volume = { 29 }, year = { 2018 }, pages = { 1805184 } }

TY - JOUR AU - S. Cecchi AU - D. Dragoni AU - D. Kriegner AU - E. Tisbi AU - E. Zallo AU - F. Arciprete AU - V. Holý AU - M. Bernasconi AU - R. Calarco TI - Interplay between structural and thermoelectric properties in epitaxial Sb2+xTe3 alloys JF - Advanced Functional Materials JA - Adv. Funct. Mater. J1 - VL - 29 SP - 1805184 PY - 2018/11/20

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 182102 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 182102 PY - 2018/10/31

Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy

@article{ author = { X. Lü and E. Luna and L. Schrottke and K. Biermann and H. T. Grahn }, title = { Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 172101 } }

TY - JOUR AU - X. Lü AU - E. Luna AU - L. Schrottke AU - K. Biermann AU - H. T. Grahn TI - Determination of the interface grading parameter for terahertz quantum-cascade laser structures based on transmission electron microscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 172101 PY - 2018/10/22

Tunneling blockade and single-photon emission in GaAs double quantum wells

@article{ author = { M. Yuan and A. Hernández-Mínguez and K. Biermann and P. V. Santos }, title = { Tunneling blockade and single-photon emission in GaAs double quantum wells }, journal = { Physical Review B: Solid State }, volume = { 98 }, year = { 2018 }, pages = { 155311 } }

TY - JOUR AU - M. Yuan AU - A. Hernández-Mínguez AU - K. Biermann AU - P. V. Santos TI - Tunneling blockade and single-photon emission in GaAs double quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 98 SP - 155311 PY - 2018/10/12

Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy

@article{ author = { A. Hernández-Mínguez and J. Lähnemann and S. Nakhaie and J. M. J. Lopes and P. V. Santos }, title = { Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy }, journal = { Physical Review Applied }, volume = { 10 }, year = { 2018 }, pages = { 044031 } }

TY - JOUR AU - A. Hernández-Mínguez AU - J. Lähnemann AU - S. Nakhaie AU - J. M. J. Lopes AU - P. V. Santos TI - Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 10 SP - 044031 PY - 2018/10/11

Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots

@article{ author = { S. Lazic and E. Chernysheva and A. Hernández-Mínguez and P. V. Santos and H. P. van der Meulen }, title = { Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots }, journal = { Journal of Physics: Conference Series }, volume = { 1092 }, year = { 2018 }, pages = { 012075 } }

TY - JOUR AU - S. Lazic AU - E. Chernysheva AU - A. Hernández-Mínguez AU - P. V. Santos AU - H. P. van der Meulen TI - Surface acoustic wave modulation of single photon emission from GaN/InGaN nanowire quantum dots JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 1092 SP - 012075 PY - 2018/10/07

Lattice dynamics of epitaxial strain-free interfaces

@article{ author = { J. Kalt and M. Sternik and I. Sergueev and J. Herfort and B. Jenichen and H.-C. Wille and O. Sikora and P. Piekarz and K. Parlinski and T. Baumbach and S. Stankov }, title = { Lattice dynamics of epitaxial strain-free interfaces }, journal = { Physical Review B: Solid State }, volume = { 98 }, year = { 2018 }, pages = { 121409(R) } }

TY - JOUR AU - J. Kalt AU - M. Sternik AU - I. Sergueev AU - J. Herfort AU - B. Jenichen AU - H.-C. Wille AU - O. Sikora AU - P. Piekarz AU - K. Parlinski AU - T. Baumbach AU - S. Stankov TI - Lattice dynamics of epitaxial strain-free interfaces JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 98 SP - 121409(R) PY - 2018/09/24

Phase Change Materials: Strain Engineering

@article{ author = { R. Calarco and S. Cecchi and E. Zallo and F. Arciprete and M. Wuttig }, title = { Phase Change Materials: Strain Engineering }, journal = { Proceeding of the European Phase Change and Ovonics Symposium 2017 }, volume = { - }, year = { 2018 }, pages = { - } }

TY - JOUR AU - R. Calarco AU - S. Cecchi AU - E. Zallo AU - F. Arciprete AU - M. Wuttig TI - Phase Change Materials: Strain Engineering JF - Proceeding of the European Phase Change and Ovonics Symposium 2017 JA - J1 - VL - - SP - - PY - 2018/09/24

Tailoring the texture of GeTe/Sb2Te3 thin films and superlattices using the Si surface termination

@article{ author = { J. Momand and J.E. Boschker and R. Wang and R. Calarco and B.J. Kooi }, title = { Tailoring the texture of GeTe/Sb2Te3 thin films and superlattices using the Si surface termination }, journal = { Proceeding of the European Phase Change and Ovonics Symposium 2017 }, volume = { - }, year = { 2018 }, pages = { - } }

TY - JOUR AU - J. Momand AU - J.E. Boschker AU - R. Wang AU - R. Calarco AU - B.J. Kooi TI - Tailoring the texture of GeTe/Sb2Te3 thin films and superlattices using the Si surface termination JF - Proceeding of the European Phase Change and Ovonics Symposium 2017 JA - J1 - VL - - SP - - PY - 2018/09/24

InN and GaN/InN monolayers grown on ZnO {0001}

@article{ author = { T. Ernst and C. Chèze and R. Calarco }, title = { InN and GaN/InN monolayers grown on ZnO {0001} }, journal = { Journal of Applied Physics }, volume = { 124 }, year = { 2018 }, pages = { 115305 } }

TY - JOUR AU - T. Ernst AU - C. Chèze AU - R. Calarco TI - InN and GaN/InN monolayers grown on ZnO {0001} JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 124 SP - 115305 PY - 2018/09/20

Ferromagnet/semiconductor/ferromagnet hybrid trilayers grown using solid-phase epitaxy

@article{ author = { S. Gaucher and B. Jenichen and J. Herfort }, title = { Ferromagnet/semiconductor/ferromagnet hybrid trilayers grown using solid-phase epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 33 }, year = { 2018 }, pages = { 104005 } }

TY - JOUR AU - S. Gaucher AU - B. Jenichen AU - J. Herfort TI - Ferromagnet/semiconductor/ferromagnet hybrid trilayers grown using solid-phase epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 33 SP - 104005 PY - 2018/09/19

Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates

@article{ author = { M.P. Semtsiv and S.S. Kurlov and D. Alcer and Y. Matsuoka and J.-F. Kischkat and O. Bierwagen and W.T. Masselink }, title = { Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 121110 } }

TY - JOUR AU - M.P. Semtsiv AU - S.S. Kurlov AU - D. Alcer AU - Y. Matsuoka AU - J.-F. Kischkat AU - O. Bierwagen AU - W.T. Masselink TI - Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 121110 PY - 2018/09/19

Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core-shell-shell nanowires by means of in-plane and out-of-plane x-ray nano-diffraction

@article{ author = { Ali Al-Hassan and A. Davtyan and H. Küpers and R. B. Lewis and D. Bahrami and F. Bertram and Genziana Bussone and C. Richter and L. Geelhaar and U. Pietsch }, title = { Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core-shell-shell nanowires by means of in-plane and out-of-plane x-ray nano-diffraction }, journal = { Journal of Applied Crystallography }, volume = { 51 }, year = { 2018 }, pages = { 1387 } }

TY - JOUR AU - Ali Al-Hassan AU - A. Davtyan AU - H. Küpers AU - R. B. Lewis AU - D. Bahrami AU - F. Bertram AU - Genziana Bussone AU - C. Richter AU - L. Geelhaar AU - U. Pietsch TI - Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core-shell-shell nanowires by means of in-plane and out-of-plane x-ray nano-diffraction JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 51 SP - 1387 PY - 2018/09/13

Optimization of ohmic contacts to n-type GaAs nanowires

@article{ author = { L. Hüttenhofer and R. B. Lewis and S. Rauwerdink and A. Tahraoui and H. Küpers and L. Geelhaar and O. Marquardt and S. Ludwig }, title = { Optimization of ohmic contacts to n-type GaAs nanowires }, journal = { Physical Review Applied }, volume = { 10 }, year = { 2018 }, pages = { 034024 } }

TY - JOUR AU - L. Hüttenhofer AU - R. B. Lewis AU - S. Rauwerdink AU - A. Tahraoui AU - H. Küpers AU - L. Geelhaar AU - O. Marquardt AU - S. Ludwig TI - Optimization of ohmic contacts to n-type GaAs nanowires JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 10 SP - 034024 PY - 2018/09/12

Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice

@article{ author = { Z. Z. Shao and Z. Z. Yin and H. Song and W. Liu and X. J. Li and J. Zhu and K. Biermann and L. L. Bonilla and H. T. Grahn and Y. H. Zhang }, title = { Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice }, journal = { Physical Review Letters }, volume = { 121 }, year = { 2018 }, pages = { 086806 } }

TY - JOUR AU - Z. Z. Shao AU - Z. Z. Yin AU - H. Song AU - W. Liu AU - X. J. Li AU - J. Zhu AU - K. Biermann AU - L. L. Bonilla AU - H. T. Grahn AU - Y. H. Zhang TI - Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 121 SP - 086806 PY - 2018/08/24

Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice

@article{ author = { E. Mompo and M. Ruiz-Garcia and M. Carretero and H. T. Grahn and Y. H. Zhang and L. L. Bonilla }, title = { Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice }, journal = { Physical Review Letters }, volume = { 121 }, year = { 2018 }, pages = { 086805 } }

TY - JOUR AU - E. Mompo AU - M. Ruiz-Garcia AU - M. Carretero AU - H. T. Grahn AU - Y. H. Zhang AU - L. L. Bonilla TI - Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 121 SP - 086805 PY - 2018/08/24

Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.B. Rodriguez and A. Trampert }, title = { Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness }, journal = { Semiconductor Science and Technology }, volume = { 33 }, year = { 2018 }, pages = { 094006 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.B. Rodriguez AU - A. Trampert TI - Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 33 SP - 094006 PY - 2018/08/17

Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

@article{ author = { A. Senichev and P. Corfdir and O. Brandt and M. Ramsteiner and S. Breuer and J. Schilling and L. Geelhaar and P. Werner }, title = { Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire }, journal = { Nano Research }, volume = { 11 }, year = { 2018 }, pages = { 4708 } }

TY - JOUR AU - A. Senichev AU - P. Corfdir AU - O. Brandt AU - M. Ramsteiner AU - S. Breuer AU - J. Schilling AU - L. Geelhaar AU - P. Werner TI - Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire JF - Nano Research JA - Nano Res. J1 - VL - 11 SP - 4708 PY - 2018/08/15

Interaction of surface acoustic waves with electronic excitations in graphene

@article{ author = { A. Hernández-Mínguez and Y.-T. Liou and P. V. Santos }, title = { Interaction of surface acoustic waves with electronic excitations in graphene }, journal = { Journal of Physics D: Applied Physics }, volume = { 51 }, year = { 2018 }, pages = { 383001 } }

TY - JOUR AU - A. Hernández-Mínguez AU - Y.-T. Liou AU - P. V. Santos TI - Interaction of surface acoustic waves with electronic excitations in graphene JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 51 SP - 383001 PY - 2018/08/10

Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation

@article{ author = { L. von Helden and M. Schmidbauer and S. Liang and M. Hanke and R. Wördenweber and J. Schwarzkopf }, title = { Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 415704 } }

TY - JOUR AU - L. von Helden AU - M. Schmidbauer AU - S. Liang AU - M. Hanke AU - R. Wördenweber AU - J. Schwarzkopf TI - Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin fi lms promoting selective surface acoustic wave propagation JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 29 SP - 415704 PY - 2018/08/09

Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers

@article{ author = { Y. Takagaki and J. Herfort and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 4173 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 4173 PY - 2018/07/24

Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 395705 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 29 SP - 395705 PY - 2018/07/23

Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

@article{ author = { E. Courtade and B. Han and S.Nakhaie and C. Robert and X. Marie and P. Renucci and T. Taniguchi and K. Watanabe and L. Geelhaar and J. M. J. Lopes and B. Urbaszek }, title = { Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 032106 } }

TY - JOUR AU - E. Courtade AU - B. Han AU - S.Nakhaie AU - C. Robert AU - X. Marie AU - P. Renucci AU - T. Taniguchi AU - K. Watanabe AU - L. Geelhaar AU - J. M. J. Lopes AU - B. Urbaszek TI - Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 032106 PY - 2018/07/19

Chaotic current self-oscillations in doped, weakly coupled semiconductor superlattices for true random number generation

@article{ author = { Y. H. Zhang and Y. Aviad and H. T. Grahn }, title = { Chaotic current self-oscillations in doped, weakly coupled semiconductor superlattices for true random number generation }, journal = { Coupled Mathematical Models for Physical and Nanoscale Systems and their Applications; edited by L. L. Bonilla, E. Kaxiras, and R. Melnik }, volume = { 232 }, year = { 2018 }, pages = { 35 } }

TY - JOUR AU - Y. H. Zhang AU - Y. Aviad AU - H. T. Grahn TI - Chaotic current self-oscillations in doped, weakly coupled semiconductor superlattices for true random number generation JF - Coupled Mathematical Models for Physical and Nanoscale Systems and their Applications; edited by L. L. Bonilla, E. Kaxiras, and R. Melnik JA - J1 - VL - 232 SP - 35 PY - 2018/07/01

Molecular Beam Epitaxy of Graphene and Hexagonal Boron Nitride

@article{ author = { J. M. J. Lopes and D. Vignaud }, title = { Molecular Beam Epitaxy of Graphene and Hexagonal Boron Nitride }, journal = { Molecular Beam Epitaxy - From Research to Mass Production, Second Edition, edited by M. Henini, Elsevier 2018 }, volume = { 21 }, year = { 2018 }, pages = { 487 } }

TY - JOUR AU - J. M. J. Lopes AU - D. Vignaud TI - Molecular Beam Epitaxy of Graphene and Hexagonal Boron Nitride JF - Molecular Beam Epitaxy - From Research to Mass Production, Second Edition, edited by M. Henini, Elsevier 2018 JA - J1 - ISBN: 978-0-12-812136-8 VL - 21 SP - 487 PY - 2018/06/26

Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems

@article{ author = { J. Gradl and R. Winkler and M. Kempf and J. Holler and D. Schuh and D. Bougeard and A. Hernández-Mínguez and K. Biermann and P. V. Santos and C. Schüller and T. Korn }, title = { Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems }, journal = { Physical Review X }, volume = { 8 }, year = { 2018 }, pages = { 021068 } }

TY - JOUR AU - J. Gradl AU - R. Winkler AU - M. Kempf AU - J. Holler AU - D. Schuh AU - D. Bougeard AU - A. Hernández-Mínguez AU - K. Biermann AU - P. V. Santos AU - C. Schüller AU - T. Korn TI - Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems JF - Physical Review X JA - Phys. Rev. X J1 - PRX VL - 8 SP - 021068 PY - 2018/06/18

Designing of epitaxial GeSbTe alloys by tuning phase, composition and vacancy ordering

@article{ author = { V. Bragaglia and F. Arciprete and A. M. Mio and R. Calarco }, title = { Designing of epitaxial GeSbTe alloys by tuning phase, composition and vacancy ordering }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 215304 } }

TY - JOUR AU - V. Bragaglia AU - F. Arciprete AU - A. M. Mio AU - R. Calarco TI - Designing of epitaxial GeSbTe alloys by tuning phase, composition and vacancy ordering JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 215304 PY - 2018/06/06

Intrinsic frequency tuning of terahertz quantum-cascade lasers

@article{ author = { L. Schrottke and X. Lü and B. Röben and K. Biermann and M. Wienold and H. Richter and H.-W. Hübers and H. T. Grahn }, title = { Intrinsic frequency tuning of terahertz quantum-cascade lasers }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 213102 } }

TY - JOUR AU - L. Schrottke AU - X. Lü AU - B. Röben AU - K. Biermann AU - M. Wienold AU - H. Richter AU - H.-W. Hübers AU - H. T. Grahn TI - Intrinsic frequency tuning of terahertz quantum-cascade lasers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 213102 PY - 2018/05/31

Coherent X-ray diffraction imaging meets ptychography to study core-shell-shell nanowires

@article{ author = { A. Davtyan and V. Favre-Nicolin and R. B. Lewis and H. Küpers and L. Geelhaar and D. Kriegner and D. Bahrami and A. Al-Hassan and G. Chahine and O. Loffeld and U. Pietsch }, title = { Coherent X-ray diffraction imaging meets ptychography to study core-shell-shell nanowires }, journal = { MRS Advances }, volume = { 3 }, year = { 2018 }, pages = { 2317 } }

TY - JOUR AU - A. Davtyan AU - V. Favre-Nicolin AU - R. B. Lewis AU - H. Küpers AU - L. Geelhaar AU - D. Kriegner AU - D. Bahrami AU - A. Al-Hassan AU - G. Chahine AU - O. Loffeld AU - U. Pietsch TI - Coherent X-ray diffraction imaging meets ptychography to study core-shell-shell nanowires JF - MRS Advances JA - MRS Advances J1 - VL - 3 SP - 2317 PY - 2018/05/28

Ordered structure of FeGe2 formed during solid-phase epitaxy

@article{ author = { B. Jenichen and M. Hanke and S. Gaucher and A. Trampert and J. Herfort and H. Kirmse and B. Haas and E. Willinger and X. Huang and S. C. Erwin }, title = { Ordered structure of FeGe2 formed during solid-phase epitaxy }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 051402 } }

TY - JOUR AU - B. Jenichen AU - M. Hanke AU - S. Gaucher AU - A. Trampert AU - J. Herfort AU - H. Kirmse AU - B. Haas AU - E. Willinger AU - X. Huang AU - S. C. Erwin TI - Ordered structure of FeGe2 formed during solid-phase epitaxy JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 051402 PY - 2018/05/21

Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities

@article{ author = { A. S. Kuznetsov and P. L. J. Helgers and K. Biermann and P. V. Santos }, title = { Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities }, journal = { Physical Review B: Solid State }, volume = { 97 }, year = { 2018 }, pages = { 195309 } }

TY - JOUR AU - A. S. Kuznetsov AU - P. L. J. Helgers AU - K. Biermann AU - P. V. Santos TI - Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 97 SP - 195309 PY - 2018/05/18

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

@article{ author = { P. Corfdir and G. Calabrese and A. Laha and T. Auzelle and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 3202 } }

TY - JOUR AU - P. Corfdir AU - G. Calabrese AU - A. Laha AU - T. Auzelle AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 3202 PY - 2018/05/18

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

@article{ author = { M. Budde and C. Tschammer and P. Franz and J. Feldl and M. Ramsteiner and R. Goldhahn and M. Feneberg and N. Barsan and A. Oprea and O. Bierwagen }, title = { Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 195301 } }

TY - JOUR AU - M. Budde AU - C. Tschammer AU - P. Franz AU - J. Feldl AU - M. Ramsteiner AU - R. Goldhahn AU - M. Feneberg AU - N. Barsan AU - A. Oprea AU - O. Bierwagen TI - Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 195301 PY - 2018/05/15

Growth of boron-doped graphene by molecular beam epitaxy

@article{ author = { G.V. Soares and S. Nakhaie and M. Heilmann and H. Riechert and J. M. J. Lopes }, title = { Growth of boron-doped graphene by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 163103 } }

TY - JOUR AU - G.V. Soares AU - S. Nakhaie AU - M. Heilmann AU - H. Riechert AU - J. M. J. Lopes TI - Growth of boron-doped graphene by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 163103 PY - 2018/04/17

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

@article{ author = { F. Ishikawa and K. Higashi and S. Fuyuno and M. Morifuji and M. Kondow and A. Trampert }, title = { Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure }, journal = { Scientific Reports }, volume = { 8 }, year = { 2018 }, pages = { 5962 } }

TY - JOUR AU - F. Ishikawa AU - K. Higashi AU - S. Fuyuno AU - M. Morifuji AU - M. Kondow AU - A. Trampert TI - Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 8 SP - 5962 PY - 2018/04/13

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys

@article{ author = { J.E. Boschker and X. Lü and V. Bragaglia and R. Wang and H. T. Grahn and R. Calarco }, title = { Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys }, journal = { Scientific Reports }, volume = { 8 }, year = { 2018 }, pages = { 5889 } }

TY - JOUR AU - J.E. Boschker AU - X. Lü AU - V. Bragaglia AU - R. Wang AU - H. T. Grahn AU - R. Calarco TI - Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 8 SP - 5889 PY - 2018/04/12

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

@article{ author = { V. Hortelano and H. Weidlich and M.P. Semtsiv and W. T. Masselink and M. Ramsteiner and U. Jahn and K. Biermann and Y. Takagaki }, title = { Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151602 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - M.P. Semtsiv AU - W. T. Masselink AU - M. Ramsteiner AU - U. Jahn AU - K. Biermann AU - Y. Takagaki TI - Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151602 PY - 2018/04/10

Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.-B. Rodriguez and A. Trampert }, title = { Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151905 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.-B. Rodriguez AU - A. Trampert TI - Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151905 PY - 2018/04/10

Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures

@article{ author = { R. B. Lewis and P. Corfdir and H. Küpers and T. Flissikowski and O. Brandt and L. Geelhaar }, title = { Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2343 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Küpers AU - T. Flissikowski AU - O. Brandt AU - L. Geelhaar TI - Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2343 PY - 2018/03/23

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

@article{ author = { V. M. Kaganer and K. K. Sabelfeld and O. Brandt }, title = { Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 122101 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld AU - O. Brandt TI - Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 122101 PY - 2018/03/19

One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure

@article{ author = { R. Addou and C. M. Smyth and J.-Y. Noh and Y.-C. Lin and Y. Pan and S. M. Eichfeld and S. Fölsch and R. M. Feenstra and J. A. Robinson and K. Cho and R. M. Wallace }, title = { One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure }, journal = { 2D Materials }, volume = { 5 }, year = { 2018 }, pages = { 025017 } }

TY - JOUR AU - R. Addou AU - C. M. Smyth AU - J.-Y. Noh AU - Y.-C. Lin AU - Y. Pan AU - S. M. Eichfeld AU - S. Fölsch AU - R. M. Feenstra AU - J. A. Robinson AU - K. Cho AU - R. M. Wallace TI - One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure JF - 2D Materials JA - 2D Mater. J1 - VL - 5 SP - 025017 PY - 2018/03/08

Doppler-free spectroscopy with a terahertz quantum-cascade laser

@article{ author = { M. Wienold and T. Alam and L. Schrottke and H. T. Grahn and H.-W. Hübers }, title = { Doppler-free spectroscopy with a terahertz quantum-cascade laser }, journal = { Optics Express }, volume = { 26 }, year = { 2018 }, pages = { 6692 } }

TY - JOUR AU - M. Wienold AU - T. Alam AU - L. Schrottke AU - H. T. Grahn AU - H.-W. Hübers TI - Doppler-free spectroscopy with a terahertz quantum-cascade laser JF - Optics Express JA - Opt. Express J1 - VL - 26 SP - 6692 PY - 2018/03/05

The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications

@article{ author = { O. Bierwagen and Z. Galazka }, title = { The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 092105 } }

TY - JOUR AU - O. Bierwagen AU - Z. Galazka TI - The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 092105 PY - 2018/02/27

Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and L. A. Galves and C. Sinito and J. M. J. Lopes and L. Geelhaar and O. Brandt }, title = { Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene }, journal = { Proceedings of SPIE }, volume = { 10532 }, year = { 2018 }, pages = { 105321U } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - L. A. Galves AU - C. Sinito AU - J. M. J. Lopes AU - L. Geelhaar AU - O. Brandt TI - Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 10532 SP - 105321U PY - 2018/02/23

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

@article{ author = { J. Kellner and G. Bihlmayer and M. Liebmann and S. Otto and C. Pauly and J. E. Boschker and V. Bragaglia and S. Cecchi and R. N. Wang and V. L. Deringer and P. Kueppers and P. Bhaskar and E. Golias and J. Sanchez-Barriga and R. Dronskowski and T. Fauster and O. Rader and R. Calarco and M. Morgenstern }, title = { Mapping the band structure of GeSbTe phase change alloys around the Fermi level }, journal = { Nature Communications Physics }, volume = { 1 }, year = { 2018 }, pages = { 5 } }

TY - JOUR AU - J. Kellner AU - G. Bihlmayer AU - M. Liebmann AU - S. Otto AU - C. Pauly AU - J. E. Boschker AU - V. Bragaglia AU - S. Cecchi AU - R. N. Wang AU - V. L. Deringer AU - P. Kueppers AU - P. Bhaskar AU - E. Golias AU - J. Sanchez-Barriga AU - R. Dronskowski AU - T. Fauster AU - O. Rader AU - R. Calarco AU - M. Morgenstern TI - Mapping the band structure of GeSbTe phase change alloys around the Fermi level JF - Nature Communications Physics JA - J1 - ISSN 2399-3650 VL - 1 SP - 5 PY - 2018/02/22

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

@article{ author = { S. Lazic and E. Chernysheva and A. Hernández-Mínguez and P. V. Santos and H. P. van der Meulen }, title = { Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures }, journal = { Journal of Physics D: Applied Physics }, volume = { 51 }, year = { 2018 }, pages = { 104001 } }

TY - JOUR AU - S. Lazic AU - E. Chernysheva AU - A. Hernández-Mínguez AU - P. V. Santos AU - H. P. van der Meulen TI - Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 51 SP - 104001 PY - 2018/02/15

The diameter evolution of selective area grown Ga-assisted GaAs nanowires in molecular beam epitaxy

@article{ author = { H. Küpers and R. B. Lewis and A. Tahraoui and M. Matalla and O. Krüger and F. Bastiman and H. Riechert and L. Geelhaar }, title = { The diameter evolution of selective area grown Ga-assisted GaAs nanowires in molecular beam epitaxy }, journal = { Nano Research }, volume = { 11 }, year = { 2018 }, pages = { 2885 } }

TY - JOUR AU - H. Küpers AU - R. B. Lewis AU - A. Tahraoui AU - M. Matalla AU - O. Krüger AU - F. Bastiman AU - H. Riechert AU - L. Geelhaar TI - The diameter evolution of selective area grown Ga-assisted GaAs nanowires in molecular beam epitaxy JF - Nano Research JA - Nano Res. J1 - VL - 11 SP - 2885 PY - 2018/02/15

Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111)

@article{ author = { Y. Takagaki and B. Jenichen and A. Trampert }, title = { Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 983 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - A. Trampert TI - Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 983 PY - 2018/02/12

Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers

@article{ author = { Y. Pan and S. Fölsch and Y. Nie and D. Waters and Y.-C. Lin and B. Jariwala and K. Zhang and K. Cho and J. A. Robinson and R. M. Feenstra }, title = { Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 1849 } }

TY - JOUR AU - Y. Pan AU - S. Fölsch AU - Y. Nie AU - D. Waters AU - Y.-C. Lin AU - B. Jariwala AU - K. Zhang AU - K. Cho AU - J. A. Robinson AU - R. M. Feenstra TI - Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 1849 PY - 2018/02/07

2D or not 2D: Strain tuning in weakly coupled heterostructures

@article{ author = { R. Wang and F. R. L. Lange and S. Cecchi and M. Hanke and M. Wuttig and R. Calarco }, title = { 2D or not 2D: Strain tuning in weakly coupled heterostructures }, journal = { Advanced Functional Materials }, volume = { 28 }, year = { 2018 }, pages = { 1705901 } }

TY - JOUR AU - R. Wang AU - F. R. L. Lange AU - S. Cecchi AU - M. Hanke AU - M. Wuttig AU - R. Calarco TI - 2D or not 2D: Strain tuning in weakly coupled heterostructures JF - Advanced Functional Materials JA - Adv. Funct. Mater. J1 - VL - 28 SP - 1705901 PY - 2018/01/31

Ferroelectric Control of the Spin Texture in GeTe

@article{ author = { C. Rinaldi and S. Varotto and M. Asa and J. Slawinska and J. Fujii and G. Vinai and S. Cecchi and D. Di Sante and R. Calarco and I. Vobornik and G. Panaccione and S. Picozzi and R. Bertacco }, title = { Ferroelectric Control of the Spin Texture in GeTe }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2751 } }

TY - JOUR AU - C. Rinaldi AU - S. Varotto AU - M. Asa AU - J. Slawinska AU - J. Fujii AU - G. Vinai AU - S. Cecchi AU - D. Di Sante AU - R. Calarco AU - I. Vobornik AU - G. Panaccione AU - S. Picozzi AU - R. Bertacco TI - Ferroelectric Control of the Spin Texture in GeTe JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2751 PY - 2018/01/30

Electronic and transport properties of Li-doped NiO epitaxial thin films

@article{ author = { J. Y. Zhang and W. W. Li and R. L. Z. Hoye and J. L. MacManus-Driscoll and M. Budde and O. Bierwagen and L. Wang and Y. Du and M. J. Wahila and L. F. J. Piper and T.-L. Lee and H. J. Edwards and V. R. Dhanak and K. H. L. Zhang }, title = { Electronic and transport properties of Li-doped NiO epitaxial thin films }, journal = { Journal of Materials Chemistry C }, volume = { 6 }, year = { 2018 }, pages = { 2275 } }

TY - JOUR AU - J. Y. Zhang AU - W. W. Li AU - R. L. Z. Hoye AU - J. L. MacManus-Driscoll AU - M. Budde AU - O. Bierwagen AU - L. Wang AU - Y. Du AU - M. J. Wahila AU - L. F. J. Piper AU - T.-L. Lee AU - H. J. Edwards AU - V. R. Dhanak AU - K. H. L. Zhang TI - Electronic and transport properties of Li-doped NiO epitaxial thin films JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 6 SP - 2275 PY - 2018/01/25

Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials

@article{ author = { J. C. Lin and B. Jariwala and B. M. Bersch and K. Xu and Y. Ni and B. Wang and S. M. Eichfeld and X. Zhang and T. H. Choudhury and Y. Pan and R. Addou and C. M. Smyth and J. Li and K. Zhang and A. Haque and S. Fölsch and R. M. Feenstra and R. M. Wallace and K. Cho and S. K. Fullerton-Shire and J. M. Redwing and J. A. Robinson }, title = { Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials }, journal = { ACS Nano }, volume = { 12 }, year = { 2018 }, pages = { 965 } }

TY - JOUR AU - J. C. Lin AU - B. Jariwala AU - B. M. Bersch AU - K. Xu AU - Y. Ni AU - B. Wang AU - S. M. Eichfeld AU - X. Zhang AU - T. H. Choudhury AU - Y. Pan AU - R. Addou AU - C. M. Smyth AU - J. Li AU - K. Zhang AU - A. Haque AU - S. Fölsch AU - R. M. Feenstra AU - R. M. Wallace AU - K. Cho AU - S. K. Fullerton-Shire AU - J. M. Redwing AU - J. A. Robinson TI - Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials JF - ACS Nano JA - ACS Nano J1 - VL - 12 SP - 965 PY - 2018/01/23

Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

@article{ author = { A. Al Hassan and R. B. Lewis and H. Küpers and W. H. Lin and D. Bahrami and T. Krause and D. Salomon and A. Tahraoui and M. Hanke and L. Geelhaar and U. Pietsch }, title = { Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 014604 } }

TY - JOUR AU - A. Al Hassan AU - R. B. Lewis AU - H. Küpers AU - W. H. Lin AU - D. Bahrami AU - T. Krause AU - D. Salomon AU - A. Tahraoui AU - M. Hanke AU - L. Geelhaar AU - U. Pietsch TI - Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 014604 PY - 2018/01/19

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

@article{ author = { M. Heilmann and M. Bashouti and H. Riechert and J. M. J. Lopes }, title = { Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene }, journal = { 2D Materials }, volume = { 5 }, year = { 2018 }, pages = { 025004 } }

TY - JOUR AU - M. Heilmann AU - M. Bashouti AU - H. Riechert AU - J. M. J. Lopes TI - Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 5 SP - 025004 PY - 2018/01/15

Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation

@article{ author = { J. Momand and J. E. Boschker and R. Wang and R. Calarco and B. J. Kooi }, title = { Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 340 } }

TY - JOUR AU - J. Momand AU - J. E. Boschker AU - R. Wang AU - R. Calarco AU - B. J. Kooi TI - Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 340 PY - 2018/01/14

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. van Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. van Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Doping of Self-Catalyzed Nanowires under the Influence of Droplets

@article{ author = { Yunyan Zhang and Zhiyuan Sun and Ana Sanchez and M. Ramsteiner and Martin Aagesen and Jiang Wu and Dongyoung Kim and Pamela Jurczak and Suguo Huo and Lincoln Lauhon and Huiyun Liu }, title = { Doping of Self-Catalyzed Nanowires under the Influence of Droplets }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 81 } }

TY - JOUR AU - Yunyan Zhang AU - Zhiyuan Sun AU - Ana Sanchez AU - M. Ramsteiner AU - Martin Aagesen AU - Jiang Wu AU - Dongyoung Kim AU - Pamela Jurczak AU - Suguo Huo AU - Lincoln Lauhon AU - Huiyun Liu TI - Doping of Self-Catalyzed Nanowires under the Influence of Droplets JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 81 PY - 2018/01/10

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

@article{ author = { L. Lymperakis and T. Schulz and C. Freysoldt and M. Anikeeva and Z. Chen and X. Zheng and B. Shen and C. Chèze and M. Siekacz and X. Q. Wang and M. Albrecht and J. Neugebauer }, title = { Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { no. } }

TY - JOUR AU - L. Lymperakis AU - T. Schulz AU - C. Freysoldt AU - M. Anikeeva AU - Z. Chen AU - X. Zheng AU - B. Shen AU - C. Chèze AU - M. Siekacz AU - X. Q. Wang AU - M. Albrecht AU - J. Neugebauer TI - Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - no. PY - 2018/01/08

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. van Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. van Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01

Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor

@article{ author = { G.K. Rolim and S.A. Correa and L. A. Galves and J. M. J. Lopes and G.V. Soares and C. Radtke }, title = { Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor }, journal = { Applied Surface Science }, volume = { 427 }, year = { 2018 }, pages = { 825 } }

TY - JOUR AU - G.K. Rolim AU - S.A. Correa AU - L. A. Galves AU - J. M. J. Lopes AU - G.V. Soares AU - C. Radtke TI - Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 427 SP - 825 PY - 2018/01/01

On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study

@article{ author = { M. Niehle and J.-B. Rodriguez and L. Cerutti and E. Tournie and A. Trampert }, title = { On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study }, journal = { Acta Materialia }, volume = { 143 }, year = { 2018 }, pages = { 121 } }

TY - JOUR AU - M. Niehle AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie AU - A. Trampert TI - On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study JF - Acta Materialia JA - Acta Mat. J1 - VL - 143 SP - 121 PY - 2018/01/01

Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and J. Schwarzkopf }, title = { Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 015701 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - J. Schwarzkopf TI - Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 29 SP - 015701 PY - 2018/01/01

Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces

@article{ author = { T. Berthold and S. Katzer and J. Rombach and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces }, journal = { Physica Status Solidi B }, volume = { 255 }, year = { 2018 }, pages = { 1700324 } }

TY - JOUR AU - T. Berthold AU - S. Katzer AU - J. Rombach AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 255 SP - 1700324 PY - 2018/01/01

Quantum fluids of light in acoustic lattices

@article{ author = { E A Cerda-Méndez and D. N. Krizhanovskii and M. S. Skolnick and P. V. Santos }, title = { Quantum fluids of light in acoustic lattices }, journal = { Journal of Physics D: Applied Physics }, volume = { 51 }, year = { 2018 }, pages = { 033001 } }

TY - JOUR AU - E A Cerda-Méndez AU - D. N. Krizhanovskii AU - M. S. Skolnick AU - P. V. Santos TI - Quantum fluids of light in acoustic lattices JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 51 SP - 033001 PY - 2018/01/01

Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy

@article{ author = { K. Berlin and A. Trampert }, title = { Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy }, journal = { Journal of Physical Chemistry C }, volume = { 122 }, year = { 2018 }, pages = { 2968 } }

TY - JOUR AU - K. Berlin AU - A. Trampert TI - Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 122 SP - 2968 PY - 2018/01/01