Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film
Scanning electron micrograph of the GaN nanowires grown on TiN in bird's eye view. The length of well-developed nanowires is 300 nm, and they are typically 20 to 40 nm thick.
Our strategy has been to employ the strong tendency of GaN to spontaneously form single-crystalline nanowires under suitable growth conditions. As a substrate, we have chosen TiN because this material is chemically as well as thermally very stable and exhibits metallic conductivity. Our experiments have demonstrated that the growth of GaN by molecular beam epitaxy indeed results also on a TiN film in vertical nanowires. In-situ electron diffraction has evidenced that these nanowires have a strict epitaxial relationship to the TiN film. Photoluminescence spectroscopy has shown excitonic GaN transitions virtually identical in spectral position, linewidth and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.
| 1 | Autor | M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert |
| Titel |
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film |
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| Source | Nano Lett. , 15 , 3743 ( 2015 ) | |
| DOI : 10.1021/acs.nanolett.5b00251 | Cite : Bibtex RIS | ||
Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V.
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