In this work, we demonstrate the self–assembled growth of an ensemble of single crystalline, uncoalesced, and vertically aligned GaN nanowires on a flexible Ti foil using plasma–assisted molecular beam epitaxy. The structural and optical properties of the sample, investigated by transmission electron microscopy and photoluminescence spectroscopy, are compared with those of standard GaN nanowire ensembles prepared on Si(111) substrates. We find that both the structural perfection and the low temperature photoluminescence spectra of the nanowire ensembles prepared on Ti foils and Si substrates are fairly comparable. Furthermore, we do not observe any degradation of the luminescence upon bending the nanowire ensemble prepared on the foil down to a small curvature radius of 4mm. Therefore, a GaN nanowire ensemble on a Ti foil is indeed a highly flexible system suitable for the realization of bendable GaN-based devices. The present results pave the way for the realization of flexible GaN nanowire-based electronic and optoelectronic devices on metal foils.
|1||Autor||G. Calabrese , P. Corfdir , G. Gao , C. Pfüller , A. Trampert , O. Brandt , L. Geelhaar , S. Fernández-Garrido|
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
|Source||Appl. Phys. Lett. , 108 , 202101 ( 2016 )|
: 10.1063/1.4950707 |
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