In this work, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction. The thinnest nanowires exhibit the strongest dielectric confinement and the highest radiative efficiency at 300 K. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.
|1||Autor||J. K. Zettler , P. Corfdir , C. Hauswald , E. Luna , U. Jahn , T. Flissikowski , E. Schmidt , C. Ronning , A. Trampert , L. Geelhaar , H. T. Grahn , O. Brandt , S. Fernández-Garrido|
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
|Source||Nano Lett. , 16 , 973 ( 2016 )|
: 10.1021/acs.nanolett.5b03931 |