In this work, we demonstrate the feasibility of employing molecular beam epitaxy (MBE) as a method to prepare continuous h-BN films on polycrystalline Ni foils. Besides its continuity over a large area, the MBE-grown h-BN possesses high structural quality. Atomically thin films could be synthesized, which is an important achievement towards the integration of this material into complex heterostructures, in combination with atomic layers of other 2D materials. We also benefit from the high level of growth control in MBE to gain knowledge about the formation of h-BN on the substrate surface. The use of short growth times allowed us to get important insight into the nucleation and growth behavior of h-BN before forming a closed film.
|1||Autor||S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner , M. Hanke , J. M. J. Lopes , H. Riechert|
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
|Source||Appl. Phys. Lett. , 106 , 213108 ( 2015 )|
: 10.1063/1.4921921 |
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