III-V Nanowires for Optoelectronics


In general, our research relates to applications based on either light emission or light absorption, e.g. optical data transmission or energy harvesting. Since the nanowire geometry facilitates the integration of dissimilar materials, substrates with attractive properties can be employed that were excluded for planar growth. Furthermore, the spectral region of optoelectronic devices can be widened. Also, radial nanowire heterostructures drastically increase the size of the active region, which is associated with stronger light emission and absorption. In addition, light-matter interaction can be tailored by design of nanowire dimensions and their arrangement in arrays.


Currently, we work towards a laser monolithically integrated on Si. Such a laser is of strategic relevance for the application field Si photonics. Our concept will provide the direct coupling of light between arrays of vertical III-V nanowires and planar Si waveguides. This project MILAS is funded by the Federal Ministry of Education and Research, and our partner is Technical University of Berlin.



Selected Publications

4 Author J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Source ACS Appl. Nano Mater. , 3 , 165 ( 2020 )
DOI : 10.1021/acsanm.9b01866 | Download arXiv: 1908.10134 | 3132 Cite : Bibtex RIS
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar

3 Author M. Musolino , A. Tahraoui , L. Geelhaar , F. Sacconi , F. Panetta , C. De Santi , M. Meneghini , E. Zanoni

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Source Phys. Rev. Appl. , 7 , 044014 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.044014 | Download arXiv: 1704.01569 | 2888 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, L. Geelhaar, F. Sacconi, F. Panetta, C. De Santi, M. Meneghini, and E. Zanoni

2 Author J. Kamimura , P. Bogdanoff , P. Corfdir , O. Brandt , H. Riechert , L. Geelhaar

Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect

Source ACS Appl. Mater. Interfaces , 8 , 34490 ( 2016 )
DOI : 10.1021/acsami.6b12874 | 2834 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, P. Corfdir, O. Brandt, H. Riechert, and L. Geelhaar

1 Author C. Hauswald , I. Giuntoni , T. Flissikowski , T. Gotschke , R. Calarco , H. T. Grahn , L. Geelhaar , O. Brandt

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

Source ACS Photonics , 4 , 52 ( 2017 )
DOI : 10.1021/acsphotonics.6b00551 | 2823 Cite : Bibtex RIS
C. Hauswald, I. Giuntoni, T. Flissikowski, T. Gotschke, R. Calarco, H. T. Grahn, L. Geelhaar, and O. Brandt


Dr. Lutz Geelhaar

Head of Department

+49 30 20377-359


Dr. Oliver Brandt

Senior Scientist

+49 30 20377-332

lab: -444