III-V Nanowires for Optoelectronics

The chamber geometry of a system for molecular beam epitaxy (MBE) is known to affect technical aspects such as the macroscopic deposition homogeneity across a wafer. However, for the microscopic mechanisms governing the growth of thin films on a planar substrate, the chamber geometry does not play...

A strong asset of bottom-up nanowires and related nanowire heterostructures is the enhanced surface strain relaxation that delays the onset of plastic relaxation. As a matter of fact, GaN nanowires essentially free of dislocations can be directly grown on technologically relevant substrates such as...

The monolithic integration of light emitters on Si remains an important technological challenge for the development of intra-chip optical connections, as well as inter-chip connections. In this context, GaAs nanowires grown on Si substrates offer great potential, but their effective use for Si...

AlN is the material of choice for optoelectronic devices working in the deep ultraviolet (UV) spectral range. However, the use of AlN in applications has been hampered by the lack of native substrates, resulting in high defect densities of AlN thin films. An attractive opportunity is offered by...

When III-V compound semiconductors are grown as nanowires instead of planar thin films, crystal structures may form that otherwise would only be metastable. In consequence, changes in crystal structure can occur along the growth axis. This polytypism offers the chance to study the properties of...

One of the most demanding challenges for materials synthesis is the fabrication of nanostructures that enable the observation of quantum phase coherence phenomena. A prominent example is the excitonic Aharonov-Bohm effect, which requires nanoscale semiconductor rings with the highest structural...

GaN-based nanowires have emerged as a promising approach to light emission and solar energy harvesting applications. In this framework, p-type doping of GaN by Mg is one of the most important prerequisites for the fabrication of such devices. However, characterizing the electrical properties of...

The linear optical response of a bulk material is fully described by the wavelength-dependent complex refractive index n(λ). However, if the material is structured on a scale comparable to or smaller than the wavelength of the light it interacts with, the optical response is additionally affected or...