Nanoanalytics

Interfaces in epitaxial hetero-structures and nanosystems

A central goal in preparing modern artiﬁcial heterostructures and nanomaterials is the control of interfaces and the understanding of their building principles. Interfaces have a crucial eﬀect on both, physical properties and device performance, in particular as structure sizes become smaller. The detailed analysis and understanding of morphology and chemical intermixing of epitaxial interfaces allows a better control during growth and opens the possibility to tune the interface property with the appropriate functionality in nano-structured materials.

Epitaxial hetero-interfaces are generally classiﬁed as coherent or semi-coherent, depending on the epitaxial strain state. We are studying the character of epitaxial strain and strain relieving mechanisms as well as the atomic conﬁguration and translation state of coherent interfaces between dissimilar materials.

In addition, interfaces in III-V semiconductors as well as heterovalent II-VI/III-V hetero-structures are quantitatively analyzed with respect to structural roughness and chemical intermixing as deﬁned by compositional proﬁles. Finally, the three-dimensional character of real interfaces is examined and comprehensively represented by means of sophisticated electron tomography methods.

Selected Publications

4	Author	E. Luna , A. Trampert , J.Lu , T. Aoki , Y.-H. Zhang , M. R. McCartney , D. J. Smith
	Title	Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb
	Source	Advanced Materials Interfaces , 7 , 1901658 ( 2020 )
DOI : 10.1002/admi.201901658 \| 3167 Cite : Bibtex RIS @article{ author = { E. Luna and A. Trampert and J.Lu and T. Aoki and Y.-H. Zhang and M. R. McCartney and D. J. Smith }, title = { Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb }, journal = { Advanced Materials Interfaces }, volume = { 7 }, year = { 2020 }, pages = { 1901658 } } E. Luna, A. Trampert, J.Lu, T. Aoki, Y.-H. Zhang, M. R. McCartney, and D. J. Smith TY - JOUR AU - E. Luna AU - A. Trampert AU - J.Lu AU - T. Aoki AU - Y.-H. Zhang AU - M. R. McCartney AU - D. J. Smith TI - Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb JF - Advanced Materials Interfaces JA - J1 - VL - 7 SP - 1901658 PY - 2020/01/01

3	Author	E. Luna , O. Delorme , L. Cerutti , E. Tournie , J.-B. Rodriguez , A. Trampert
	Title	Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications
	Source	Appl. Phys. Lett. , 112 , 151905 ( 2018 )
DOI : 10.1063/1.5024199 \| Download: PDF \| 3029 Cite : Bibtex RIS @article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.-B. Rodriguez and A. Trampert }, title = { Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151905 } } E. Luna, O. Delorme, L. Cerutti, E. Tournie, J.-B. Rodriguez, and A. Trampert TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.-B. Rodriguez AU - A. Trampert TI - Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151905 PY - 2018/04/10

2	Author	K. Berlin , A. Trampert
	Title	Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy
	Source	Ultramicroscopy , 178 , 27 ( 2017 )
DOI : 10.1016/j.ultramic.2016.10.010 \| 2883 Cite : Bibtex RIS @article{ author = { K. Berlin and A. Trampert }, title = { Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy }, journal = { Ultramicroscopy }, volume = { 178 }, year = { 2017 }, pages = { 27 } } K. Berlin, and A. Trampert TY - JOUR AU - K. Berlin AU - A. Trampert TI - Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 178 SP - 27 PY - 2017/07/01

1	Author	T. Krause , M. Hanke , L. Nicolai , Z. Cheng , M. Niehle , A. Trampert , M. Kahnt , G. Falkenberg , C. Schroer , J. Hartmann , H. Zhou , H.-H. Wehmann , A. Waag
	Title	Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy
	Source	Phys. Rev. Appl. , 7 , 024033 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.024033 \| 2881 Cite : Bibtex RIS @article{ author = { T. Krause and M. Hanke and L. Nicolai and Z. Cheng and M. Niehle and A. Trampert and M. Kahnt and G. Falkenberg and C. Schroer and J. Hartmann and H. Zhou and H.-H. Wehmann and A. Waag }, title = { Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 024033 } } T. Krause, M. Hanke, L. Nicolai, Z. Cheng, M. Niehle, A. Trampert, M. Kahnt, G. Falkenberg, C. Schroer, J. Hartmann, H. Zhou, H.-H. Wehmann, and A. Waag TY - JOUR AU - T. Krause AU - M. Hanke AU - L. Nicolai AU - Z. Cheng AU - M. Niehle AU - A. Trampert AU - M. Kahnt AU - G. Falkenberg AU - C. Schroer AU - J. Hartmann AU - H. Zhou AU - H.-H. Wehmann AU - A. Waag TI - Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 7 SP - 024033 PY - 2017/02/28