Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

@article{ author = { E. Luna and A. Trampert and J.Lu and T. Aoki and Y.-H. Zhang and M. R. McCartney and D. J. Smith }, title = { Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb }, journal = { Advanced Materials Interfaces }, volume = { 7 }, year = { 2020 }, pages = { 1901658 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J.Lu AU - T. Aoki AU - Y.-H. Zhang AU - M. R. McCartney AU - D. J. Smith TI - Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb JF - Advanced Materials Interfaces JA - J1 - VL - 7 SP - 1901658 PY - 2020/01/01

In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

@article{ author = { M. Terker and B. Jenichen and J. Herfort and A. Trampert }, title = { In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124004 } }

TY - JOUR AU - M. Terker AU - B. Jenichen AU - J. Herfort AU - A. Trampert TI - In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124004 PY - 2019/11/15

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

@article{ author = { B. Jenichen and Z. Cheng and M. Hanke and J. Herfort and A. Trampert }, title = { Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124002 } }

TY - JOUR AU - B. Jenichen AU - Z. Cheng AU - M. Hanke AU - J. Herfort AU - A. Trampert TI - Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124002 PY - 2019/10/29

Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

@article{ author = { M. García-Tecedor and J. Bartolomé and D. Maestre and A. Trampert and A. Cremades }, title = { Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission }, journal = { Nano Research }, volume = { 12 }, year = { 2019 }, pages = { 441 } }

TY - JOUR AU - M. García-Tecedor AU - J. Bartolomé AU - D. Maestre AU - A. Trampert AU - A. Cremades TI - Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission JF - Nano Research JA - Nano Res. J1 - VL - 12 SP - 441 PY - 2019/10/26

Molecular-beam epitaxy of GaInSbBi alloys

@article{ author = { O. Delorme and L. Cerutti and E. Luna and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { Molecular-beam epitaxy of GaInSbBi alloys }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 155304 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - Molecular-beam epitaxy of GaInSbBi alloys JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 155304 PY - 2019/10/17

The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates

@article{ author = { M. Niehle and J.-B. Rodriguez and L. Cerutti and E. Tournie and A. Trampert }, title = { The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1900290 } }

TY - JOUR AU - M. Niehle AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie AU - A. Trampert TI - The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 13 SP - 1900290 PY - 2019/10/08

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { R. B. Lewis and A. Trampert and E. Luna and J. Herranz and C. Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - R. B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - C. Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

@article{ author = { E. Luna and M. Wu and T. Aoki and M.R. McCartney and J. Puustinen and J. Hilska and M. Guina and D. J. Smith and A. Trampert }, title = { Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 085305 } }

TY - JOUR AU - E. Luna AU - M. Wu AU - T. Aoki AU - M.R. McCartney AU - J. Puustinen AU - J. Hilska AU - M. Guina AU - D. J. Smith AU - A. Trampert TI - Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 085305 PY - 2019/08/26

Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width

@article{ author = { A. Fernando-Saavedra and S. Albert and A. Bengoechea-Encabo and D. Lopez-Romero and M. Niehle and S. Metzner and G. Schmidt and F. Bertram and M.A. Sanchez-Garcia and A. Trampert and J. Christen and E. Calleja }, title = { Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width }, journal = { Journal of Crystal Growth }, volume = { 525 }, year = { 2019 }, pages = { 125189 } }

TY - JOUR AU - A. Fernando-Saavedra AU - S. Albert AU - A. Bengoechea-Encabo AU - D. Lopez-Romero AU - M. Niehle AU - S. Metzner AU - G. Schmidt AU - F. Bertram AU - M.A. Sanchez-Garcia AU - A. Trampert AU - J. Christen AU - E. Calleja TI - Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 525 SP - 125189 PY - 2019/08/08

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15