Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires

@article{ author = { L. Nicolai and Ž. Gačević and E. Calleja and A. Trampert }, title = { Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires }, journal = { Nanoscale Research Letters }, volume = { 14 }, year = { 2019 }, pages = { 232 } }

TY - JOUR AU - L. Nicolai AU - Ž. Gačević AU - E. Calleja AU - A. Trampert TI - Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 14 SP - 232 PY - 2019/07/12

GaSbBi Alloys and Heterostructures: Fabrication and Properties

@article{ author = { O. Delorme and L. Cerutti and R. Kudrawiec and E. Luna and J. Kopaczek and M. Gladysiewicz and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { GaSbBi Alloys and Heterostructures: Fabrication and Properties }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 125 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - R. Kudrawiec AU - E. Luna AU - J. Kopaczek AU - M. Gladysiewicz AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - GaSbBi Alloys and Heterostructures: Fabrication and Properties JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 125 PY - 2019/07/03

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. van Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. van Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

@article{ author = { P. Corfdir and O. Marquardt and R. B. Lewis and C. Sinito and M. Ramsteiner and A. Trampert and U. Jahn and L. Geelhaar and O. Brandt and V. M. Fomin }, title = { Excitonic Aharonov-Bohm oscillations in core-shell nanowires }, journal = { Advanced Materials }, volume = { 31 }, year = { 2019 }, pages = { 1805645 } }

TY - JOUR AU - P. Corfdir AU - O. Marquardt AU - R. B. Lewis AU - C. Sinito AU - M. Ramsteiner AU - A. Trampert AU - U. Jahn AU - L. Geelhaar AU - O. Brandt AU - V. M. Fomin TI - Excitonic Aharonov-Bohm oscillations in core-shell nanowires JF - Advanced Materials JA - Adv. Mater. J1 - VL - 31 SP - 1805645 PY - 2019/01/15

3D GaN Fins as a Versatile Platform for a-Plane-Based Devices

@article{ author = { J. Hartmann and I. Manglano Clavero and L. Nicolai and C. Margenfeld and H. Spende and J. Ledig and H. Zhou and F. Steib and A. Jaros and A. Avramescu and M. Strassburg and A. Trampert and H.-H. Wehmann and H.-J. Lugauer and T. Voss and A. Waag }, title = { 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices }, journal = { Physica Status Solidi B }, volume = { 256 }, year = { 2019 }, pages = { 1800477 } }

TY - JOUR AU - J. Hartmann AU - I. Manglano Clavero AU - L. Nicolai AU - C. Margenfeld AU - H. Spende AU - J. Ledig AU - H. Zhou AU - F. Steib AU - A. Jaros AU - A. Avramescu AU - M. Strassburg AU - A. Trampert AU - H.-H. Wehmann AU - H.-J. Lugauer AU - T. Voss AU - A. Waag TI - 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 256 SP - 1800477 PY - 2019/01/07

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 182102 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 182102 PY - 2018/10/31

Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.B. Rodriguez and A. Trampert }, title = { Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness }, journal = { Semiconductor Science and Technology }, volume = { 33 }, year = { 2018 }, pages = { 094006 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.B. Rodriguez AU - A. Trampert TI - Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 33 SP - 094006 PY - 2018/08/17

Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy

@article{ author = { Z. Cheng and M. Hanke and Z. Galazka and A. Trampert }, title = { Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 395705 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - Z. Galazka AU - A. Trampert TI - Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 29 SP - 395705 PY - 2018/07/23

Ordered structure of FeGe2 formed during solid-phase epitaxy

@article{ author = { B. Jenichen and M. Hanke and S. Gaucher and A. Trampert and J. Herfort and H. Kirmse and B. Haas and E. Willinger and X. Huang and S. C. Erwin }, title = { Ordered structure of FeGe2 formed during solid-phase epitaxy }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 051402 } }

TY - JOUR AU - B. Jenichen AU - M. Hanke AU - S. Gaucher AU - A. Trampert AU - J. Herfort AU - H. Kirmse AU - B. Haas AU - E. Willinger AU - X. Huang AU - S. C. Erwin TI - Ordered structure of FeGe2 formed during solid-phase epitaxy JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 051402 PY - 2018/05/21

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

@article{ author = { F. Ishikawa and K. Higashi and S. Fuyuno and M. Morifuji and M. Kondow and A. Trampert }, title = { Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure }, journal = { Scientific Reports }, volume = { 8 }, year = { 2018 }, pages = { 5962 } }

TY - JOUR AU - F. Ishikawa AU - K. Higashi AU - S. Fuyuno AU - M. Morifuji AU - M. Kondow AU - A. Trampert TI - Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 8 SP - 5962 PY - 2018/04/13