Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.-B. Rodriguez and A. Trampert }, title = { Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151905 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.-B. Rodriguez AU - A. Trampert TI - Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151905 PY - 2018/04/10

Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111)

@article{ author = { Y. Takagaki and B. Jenichen and A. Trampert }, title = { Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 983 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - A. Trampert TI - Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 983 PY - 2018/02/12

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. van Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. van Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study

@article{ author = { M. Niehle and J.-B. Rodriguez and L. Cerutti and E. Tournie and A. Trampert }, title = { On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study }, journal = { Acta Materialia }, volume = { 143 }, year = { 2018 }, pages = { 121 } }

TY - JOUR AU - M. Niehle AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie AU - A. Trampert TI - On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): a comprehensive transmission electron tomography and microscopy study JF - Acta Materialia JA - Acta Mat. J1 - VL - 143 SP - 121 PY - 2018/01/01

Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy

@article{ author = { K. Berlin and A. Trampert }, title = { Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy }, journal = { Journal of Physical Chemistry C }, volume = { 122 }, year = { 2018 }, pages = { 2968 } }

TY - JOUR AU - K. Berlin AU - A. Trampert TI - Phase Stability and Anisotropic Sublimation of Cubic Ge−Sb−Te Alloy Observed by In Situ Transmission Electron Microscopy JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 122 SP - 2968 PY - 2018/01/01

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

@article{ author = { J. Hartmann and F. Steib and H. Zhou and J. Ledig and L. Nicolai and S. Fündling and T. Schimpke and A. Avramescu and T. Varghese and A. Trampert and M. Straßburg and H.-J. Lugauer and H.-H. Wehmann and A. Waag }, title = { Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls }, journal = { Journal of Crystal Growth }, volume = { 476 }, year = { 2017 }, pages = { 90 } }

TY - JOUR AU - J. Hartmann AU - F. Steib AU - H. Zhou AU - J. Ledig AU - L. Nicolai AU - S. Fündling AU - T. Schimpke AU - A. Avramescu AU - T. Varghese AU - A. Trampert AU - M. Straßburg AU - H.-J. Lugauer AU - H.-H. Wehmann AU - A. Waag TI - Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 476 SP - 90 PY - 2017/10/15

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and G. Gao and L. A. Galves and Bharat Sharma and P. Corfdir and G. Calabrese and Z. de Souza Schiaber and C. Pfüller and A. Trampert and J. M. J. Lopes and O. Brandt and L. Geelhaar }, title = { Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 5213 } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - G. Gao AU - L. A. Galves AU - Bharat Sharma AU - P. Corfdir AU - G. Calabrese AU - Z. de Souza Schiaber AU - C. Pfüller AU - A. Trampert AU - J. M. J. Lopes AU - O. Brandt AU - L. Geelhaar TI - Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 5213 PY - 2017/09/13

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

@article{ author = { J. Bartolomé and M. Hanke and D. van Treeck and A. Trampert }, title = { Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4654 } }

TY - JOUR AU - J. Bartolomé AU - M. Hanke AU - D. van Treeck AU - A. Trampert TI - Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4654 PY - 2017/07/22

Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy

@article{ author = { K. Berlin and A. Trampert }, title = { Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy }, journal = { Ultramicroscopy }, volume = { 178 }, year = { 2017 }, pages = { 27 } }

TY - JOUR AU - K. Berlin AU - A. Trampert TI - Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 178 SP - 27 PY - 2017/07/01