Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

@article{ author = { C. Pfüller and P. Corfdir and C. Hauswald and T. Flissikowski and X. Kong and J. K. Zettler and S. Fernández-Garrido and P. Dogan and H. T. Grahn and A. Trampert and L. Geelhaar and O. Brandt }, title = { Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155308 } }

TY - JOUR AU - C. Pfüller AU - P. Corfdir AU - C. Hauswald AU - T. Flissikowski AU - X. Kong AU - J. K. Zettler AU - S. Fernández-Garrido AU - P. Dogan AU - H. T. Grahn AU - A. Trampert AU - L. Geelhaar AU - O. Brandt TI - Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155308 PY - 2016/10/17

Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots

@article{ author = { P. Corfdir and H. Küpers and R. B. Lewis and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155413 } }

TY - JOUR AU - P. Corfdir AU - H. Küpers AU - R. B. Lewis AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155413 PY - 2016/10/11

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

@article{ author = { J. Lähnemann and T. Flissikowski and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt and U. Jahn }, title = { Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 455706 } }

TY - JOUR AU - J. Lähnemann AU - T. Flissikowski AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - U. Jahn TI - Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 455706 PY - 2016/10/07

Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires

@article{ author = { P. Corfdir and R. B. Lewis and O. Marquardt and H. Küpers and J. Grandal and E. Dimakis and A. Trampert and L. Geelhaar and O. Brandt and R. T. Phillips }, title = { Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires }, journal = { Applied Physics Letters }, volume = { 109 }, year = { 2016 }, pages = { 082107 } }

TY - JOUR AU - P. Corfdir AU - R. B. Lewis AU - O. Marquardt AU - H. Küpers AU - J. Grandal AU - E. Dimakis AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - R. T. Phillips TI - Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 109 SP - 082107 PY - 2016/08/26

Light coupling between vertical III-V nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform

@article{ author = { I. Giuntoni and L. Geelhaar and J. Bruns and H. Riechert }, title = { Light coupling between vertical III-V nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform }, journal = { Optics Express }, volume = { 24 }, year = { 2016 }, pages = { 18417 } }

TY - JOUR AU - I. Giuntoni AU - L. Geelhaar AU - J. Bruns AU - H. Riechert TI - Light coupling between vertical III-V nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform JF - Optics Express JA - Opt. Express J1 - VL - 24 SP - 18417 PY - 2016/08/02

Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles

@article{ author = { M. Sobanska and S. Fernández-Garrido and Z. R. Zytkiewicz and G. Tchutchulashvili and S. Gieraltowska and O. Brandt and L. Geelhaar }, title = { Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 325601 } }

TY - JOUR AU - M. Sobanska AU - S. Fernández-Garrido AU - Z. R. Zytkiewicz AU - G. Tchutchulashvili AU - S. Gieraltowska AU - O. Brandt AU - L. Geelhaar TI - Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 325601 PY - 2016/06/29

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

@article{ author = { J. Kamimura and P. Bogdanoff and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting }, journal = { Semiconductor Science and Technology }, volume = { 31 }, year = { 2016 }, pages = { 074001 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 31 SP - 074001 PY - 2016/06/06

A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles

@article{ author = { M. Musolino and A. Tahraoui and D. van Treeck and L. Geelhaar and H. Riechert }, title = { A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 275203 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - D. van Treeck AU - L. Geelhaar AU - H. Riechert TI - A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 275203 PY - 2016/05/27

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

@article{ author = { G. Calabrese and P. Corfdir and G. Gao and C. Pfüller and A. Trampert and O. Brandt and L. Geelhaar and S. Fernández-Garrido }, title = { Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil }, journal = { Applied Physics Letters }, volume = { 108 }, year = { 2016 }, pages = { 202101 } }

TY - JOUR AU - G. Calabrese AU - P. Corfdir AU - G. Gao AU - C. Pfüller AU - A. Trampert AU - O. Brandt AU - L. Geelhaar AU - S. Fernández-Garrido TI - Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 108 SP - 202101 PY - 2016/05/16

Crystal-phase quantum dots in GaN quantum wires

@article{ author = { P. Corfdir and C. Hauswald and O. Marquardt and T. Flissikowski and J. K. Zettler and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum dots in GaN quantum wires }, journal = { Physical Review B: Solid State }, volume = { 93 }, year = { 2016 }, pages = { 115305 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - O. Marquardt AU - T. Flissikowski AU - J. K. Zettler AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum dots in GaN quantum wires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 93 SP - 115305 PY - 2016/03/10