Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

@article{ author = { J. K. Zettler and P. Corfdir and C. Hauswald and E. Luna and U. Jahn and T. Flissikowski and E. Schmidt and C. Ronning and A. Trampert and L. Geelhaar and H. T. Grahn and O. Brandt and S. Fernández-Garrido }, title = { Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 973 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - C. Hauswald AU - E. Luna AU - U. Jahn AU - T. Flissikowski AU - E. Schmidt AU - C. Ronning AU - A. Trampert AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - S. Fernández-Garrido TI - Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 973 PY - 2016/02/10

Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

@article{ author = { F. Bastiman and H. Küpers and C. Somaschini and L. Geelhaar }, title = { Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 095601 } }

TY - JOUR AU - F. Bastiman AU - H. Küpers AU - C. Somaschini AU - L. Geelhaar TI - Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 095601 PY - 2016/01/29

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

@article{ author = { M. Musolino and D. van Treeck and A. Tahraoui and L. Scarparo and C. De Santi and M. Meneghini and E. Zanoni and L. Geelhaar and H. Riechert }, title = { A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires }, journal = { Journal of Applied Physics }, volume = { 119 }, year = { 2016 }, pages = { 044502 } }

TY - JOUR AU - M. Musolino AU - D. van Treeck AU - A. Tahraoui AU - L. Scarparo AU - C. De Santi AU - M. Meneghini AU - E. Zanoni AU - L. Geelhaar AU - H. Riechert TI - A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 119 SP - 044502 PY - 2016/01/27

Radial Stark effect in (In,Ga)N nanowires

@article{ author = { J. Lähnemann and P. Corfdir and F. Feix and J. Kamimura and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Radial Stark effect in (In,Ga)N nanowires }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 917 } }

TY - JOUR AU - J. Lähnemann AU - P. Corfdir AU - F. Feix AU - J. Kamimura AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Radial Stark effect in (In,Ga)N nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 917 PY - 2016/01/20

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

@article{ author = { J. K. Zettler and P. Corfdir and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 445604 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 445604 PY - 2015/10/12

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP15817-PRT }, year = { 2015 }, pages = { 113 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP15817-PRT SP - 113 PY - 2015/09/07

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

@article{ author = { T. Schumann and J. M. J. Lopes and J. M. Wofford and M.H. Oliveira Jr. and M. Dubslaff and M. Hanke and U. Jahn and L. Geelhaar and H. Riechert }, title = { The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 425 }, year = { 2015 }, pages = { 274 } }

TY - JOUR AU - T. Schumann AU - J. M. J. Lopes AU - J. M. Wofford AU - M.H. Oliveira Jr. AU - M. Dubslaff AU - M. Hanke AU - U. Jahn AU - L. Geelhaar AU - H. Riechert TI - The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 425 SP - 274 PY - 2015/09/01

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

@article{ author = { H. Li and L. Geelhaar and H. Riechert and C. Draxl }, title = { Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN }, journal = { Physical Review Letters }, volume = { 115 }, year = { 2015 }, pages = { 085503 } }

TY - JOUR AU - H. Li AU - L. Geelhaar AU - H. Riechert AU - C. Draxl TI - Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 115 SP - 085503 PY - 2015/08/21

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

@article{ author = { J. K. Zettler and C. Hauswald and P. Corfdir and M. Musolino and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4104 } }

TY - JOUR AU - J. K. Zettler AU - C. Hauswald AU - P. Corfdir AU - M. Musolino AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4104 PY - 2015/06/29

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 4289 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 4289 PY - 2015/06/09