Nanofabrication

Dr. Lutz Geelhaar

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

71 Author J. K. Zettler , P. Corfdir , C. Hauswald , E. Luna , U. Jahn , T. Flissikowski , E. Schmidt , C. Ronning , A. Trampert , L. Geelhaar , H. T. Grahn , O. Brandt , S. Fernández-Garrido
Title

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Source Nano Lett. , 16 , 973 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03931 | 2739 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, C. Hauswald, E. Luna, U. Jahn, T. Flissikowski, E. Schmidt, C. Ronning, A. Trampert, L. Geelhaar, H. T. Grahn, O. Brandt, and S. Fernández-Garrido

72 Author F. Bastiman , H. Küpers , C. Somaschini , L. Geelhaar
Title

Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

Source Nanotechnology , 27 , 095601 ( 2016 )
DOI : 10.1088/0957-4484/27/9/095601 | 2691 Cite : Bibtex RIS
F. Bastiman, H. Küpers, C. Somaschini, and L. Geelhaar

73 Author M. Musolino , D. van Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert
Title

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Source J. Appl. Phys. , 119 , 044502 ( 2016 )
DOI : 10.1063/1.4940949 | Download: PDF | 2760 Cite : Bibtex RIS
M. Musolino, D. van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert

74 Author J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Title

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | Download arXiv: 1601.07201 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt

75 Author J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Source Nanotechnology , 26 , 445604 ( 2015 )
DOI : 10.1088/0957-4484/26/44/445604 | Download arXiv: 1508.06266 | 2712 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

76 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

Source IEEE , IEEE Catalog Nr. CFP15817-PRT , 113 ( 2015 )
DOI : ISBN 978-1-4799-8378-0 | 2714 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

77 Author T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert
Title

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

Source J. Cryst. Growth , 425 , 274 ( 2015 )
DOI : 10.1016/j.jcrysgro.2015.02.060 | 2670 Cite : Bibtex RIS
T. Schumann, J. M. J. Lopes, J. M. Wofford, M.H. Oliveira Jr., M. Dubslaff, M. Hanke, U. Jahn, L. Geelhaar, and H. Riechert

78 Author H. Li , L. Geelhaar , H. Riechert , C. Draxl
Title

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

Source Phys. Rev. Lett. , 115 , 085503 ( 2015 )
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | 2651 Cite : Bibtex RIS
H. Li, L. Geelhaar, H. Riechert, and C. Draxl

79 Author J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

80 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt