Nanofabrication

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

1 Author A. AlHassan , J. Lähnemann , S. Leake , H. Küpers , M. Niehle , D. Bahrami , F. Bertram , R. B. Lewis , A. Davtyan , T. U. Schülli , L. Geelhaar , U. Pietsch
Title

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

Source Nanotechnol. , 31 , 214002 ( 2020 )
DOI : 10.1088/1361-6528/ab7590 | Download arXiv: 2002.08172 | 3173 Cite : Bibtex RIS
A. AlHassan, J. Lähnemann, S. Leake, H. Küpers, M. Niehle, D. Bahrami, F. Bertram, R. B. Lewis, A. Davtyan, T. U. Schülli, L. Geelhaar, and U. Pietsch

2 Author M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar
Title

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

Source Phys. Status Solidi RRL , 14 , 1900615 ( 2020 )
DOI : 10.1002/pssr.201900615 | Download arXiv: 1910.07391 | 3149 Cite : Bibtex RIS
M. Azadmand, T. Auzelle, J. Lähnemann, G. Gao, L. Nicolai, M. Ramsteiner, A. Trampert, S. Sanguinetti, O. Brandt, and L. Geelhaar

3 Author D. v. Treeck , Sergio Fernández-Garrido , L. Geelhaar
Title

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Source Phys. Rev. Mater. , 4 , 013404 ( 2020 )
DOI : 10.1103/PhysRevMaterials.4.013404 | Download arXiv: 1907.10358 | 3109 Cite : Bibtex RIS
D. v. Treeck, Sergio Fernández-Garrido, and L. Geelhaar

4 Author J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar
Title

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Source ACS Appl. Nano Mater. , 3 , 165 ( 2020 )
DOI : 10.1021/acsanm.9b01866 | Download arXiv: 1908.10134 | 3132 Cite : Bibtex RIS
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar

5 Author Samuel D. Seddon , Christopher Benjamin , James I. Bryant , Christopher W. Burrows , Marc Walker , Graham Matheson , J. Herranz , L. Geelhaar , Gavin R. Bell
Title

Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence

Source Phys. Chem. Chem. Phys. , 21 , 24666 ( 2019 )
DOI : 10.1039/c9cp04490f | 3159 Cite : Bibtex RIS
Samuel D. Seddon, Christopher Benjamin, James I. Bryant, Christopher W. Burrows, Marc Walker, Graham Matheson, J. Herranz, L. Geelhaar, and Gavin R. Bell

6 Author Hanno Küpers , Ryan B. Lewis , L. Geelhaar
Title

Predictive model for the temporal evolution of the shape of GaAs nanowires

Source J. Cryst. Growth , 531 , 125320 ( 2019 )
DOI : 10.1016/j.jcrysgro.2019.125320 | 3117 Cite : Bibtex RIS
Hanno Küpers, Ryan B. Lewis, and L. Geelhaar

7 Author Ryan B. Lewis , A. Trampert , E. Luna , J. Herranz , Carsten Pfüller , L. Geelhaar
Title

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Source Semicond. Sci. Technol. , 34 , 105016 ( 2019 )
DOI : 10.1088/1361-6641/ab3c23 | Download arXiv: 1905.05303 | 3107 Cite : Bibtex RIS
Ryan B. Lewis, A. Trampert, E. Luna, J. Herranz, Carsten Pfüller, and L. Geelhaar

8 Author C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé Vílchez , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt
Title

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Source Nano Lett. , 19 , 5938 ( 2019 )
DOI : 10.1021/acs.nanolett.9b01521 | Download arXiv: 1905.04090 | 3108 Cite : Bibtex RIS
C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé Vílchez, S. Kölling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernández-Garrido, and O. Brandt

9 Author M. Oliva , G. Gao , E. Luna , L. Geelhaar , R. B. Lewis
Title

Axial GaAs/Ga(As,Bi) nanowire heterostructures

Source Nanotechnol. , 30 , 425601 ( 2019 )
DOI : 10.1088/1361-6528/ab3209 | Download arXiv: 1903.11039 | 3086 Cite : Bibtex RIS
M. Oliva, G. Gao, E. Luna, L. Geelhaar, and R. B. Lewis

10 Author F. Bastiman , H. Küpers , C. Somaschini , V.G. Dubrovskii , L. Geelhaar
Title

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

Source Phys. Rev. Mater. , 3 , 073401 ( 2019 )
DOI : 10.1103/PhysRevMaterials.3.073401 | Download arXiv: 1907.04249 | 3081 Cite : Bibtex RIS
F. Bastiman, H. Küpers, C. Somaschini, V.G. Dubrovskii, and L. Geelhaar