Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

@article{ author = { S. Fernández-Garrido and T. Auzelle and J. Lähnemann and K. Wimmer and A. Tahraoui and O. Brandt }, title = { Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation }, journal = { Nanoscale Advances }, volume = { 1 }, year = { 2019 }, pages = { 1893 } }

TY - JOUR AU - S. Fernández-Garrido AU - T. Auzelle AU - J. Lähnemann AU - K. Wimmer AU - A. Tahraoui AU - O. Brandt TI - Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 1 SP - 1893 PY - 2019/03/12

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars

@article{ author = { J. Lähnemann and D. A. Browne and A. Ajay and M. Jeannin and A. Vasanelli and J.-L. Thomassin and E. Bellet-Amalric and E. Monroy }, title = { Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars }, journal = { Nanotechnology }, volume = { 30 }, year = { 2018 }, pages = { 054002 } }

TY - JOUR AU - J. Lähnemann AU - D. A. Browne AU - A. Ajay AU - M. Jeannin AU - A. Vasanelli AU - J.-L. Thomassin AU - E. Bellet-Amalric AU - E. Monroy TI - Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 054002 PY - 2018/11/30

Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy

@article{ author = { A. Hernández-Mínguez and J. Lähnemann and S. Nakhaie and J. M. J. Lopes and P. V. Santos }, title = { Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy }, journal = { Physical Review Applied }, volume = { 10 }, year = { 2018 }, pages = { 044031 } }

TY - JOUR AU - A. Hernández-Mínguez AU - J. Lähnemann AU - S. Nakhaie AU - J. M. J. Lopes AU - P. V. Santos TI - Luminescent Defects in a Few-Layer h-BN Film Grown by Molecular Beam Epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 10 SP - 044031 PY - 2018/10/11

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

@article{ author = { P. Vogt and O. Brandt and H. Riechert and J. Lähnemann and O. Bierwagen }, title = { Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 196001 } }

TY - JOUR AU - P. Vogt AU - O. Brandt AU - H. Riechert AU - J. Lähnemann AU - O. Bierwagen TI - Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 196001 PY - 2017/11/07

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

@article{ author = { C. B. Lim and A. Ajay and J. Lähnemann and C. Bougerol and E. Monroy }, title = { Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 125002 } }

TY - JOUR AU - C. B. Lim AU - A. Ajay AU - J. Lähnemann AU - C. Bougerol AU - E. Monroy TI - Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 125002 PY - 2017/10/26

Crystal phase quantum well emission with digital control

@article{ author = { S. Assali and J. Lähnemann and T. Vu and K. D. Jöns and L. Gagliano and M. A. Verheijen and N. Akopian and E. P. A. M. Bakkers and J. E. M. Haverkort }, title = { Crystal phase quantum well emission with digital control }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 6062 } }

TY - JOUR AU - S. Assali AU - J. Lähnemann AU - T. Vu AU - K. D. Jöns AU - L. Gagliano AU - M. A. Verheijen AU - N. Akopian AU - E. P. A. M. Bakkers AU - J. E. M. Haverkort TI - Crystal phase quantum well emission with digital control JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 6062 PY - 2017/09/11

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

@article{ author = { M. Spies and M. I. den Hertog and P. Hille and J. Schörmann and J. Polaczyński and B. Gayral and M. Eickhoff and E. Monroy and J. Lähnemann }, title = { Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4231 } }

TY - JOUR AU - M. Spies AU - M. I. den Hertog AU - P. Hille AU - J. Schörmann AU - J. Polaczyński AU - B. Gayral AU - M. Eickhoff AU - E. Monroy AU - J. Lähnemann TI - Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4231 PY - 2017/06/14

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

@article{ author = { J. Kamimura and P. Bogdanoff and F. F. Abdi and J. Lähnemann and R. van de Krol and H. Riechert and L. Geelhaar }, title = { Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte }, journal = { Journal of Physical Chemistry C }, volume = { 121 }, year = { 2017 }, pages = { 12540 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - F. F. Abdi AU - J. Lähnemann AU - R. van de Krol AU - H. Riechert AU - L. Geelhaar TI - Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 121 SP - 12540 PY - 2017/05/30

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

@article{ author = { J. Lähnemann and T. Flissikowski and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt and U. Jahn }, title = { Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 455706 } }

TY - JOUR AU - J. Lähnemann AU - T. Flissikowski AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - U. Jahn TI - Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 455706 PY - 2016/10/07