Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

@article{ author = { T. Auzelle and C. Sinito and J. Lähnemann and G. Gao and T. Flissikowski and A. Trampert and O. Brandt and S. Fernández-Garrido }, title = { Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 4 } }

TY - JOUR AU - T. Auzelle AU - C. Sinito AU - J. Lähnemann AU - G. Gao AU - T. Flissikowski AU - A. Trampert AU - O. Brandt AU - S. Fernández-Garrido TI - Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 4 PY - 2022/04/15

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

@article{ author = { K. Tetzner and K. O. Egbo and M. Klupsch and R.-S. Unger and A. Popp and T.-S. Chou and S. Bin Anooz and Z. Galazka and A. Trampert and O. Bierwagen and J Würfl }, title = { SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 112110 } }

TY - JOUR AU - K. Tetzner AU - K. O. Egbo AU - M. Klupsch AU - R.-S. Unger AU - A. Popp AU - T.-S. Chou AU - S. Bin Anooz AU - Z. Galazka AU - A. Trampert AU - O. Bierwagen AU - J Würfl TI - SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 112110 PY - 2022/03/18

Crystal phase control during epitaxial hybridization of III-V semiconductors with silicon

@article{ author = { M. Rio Calvo and J.-B. Rodriguez and C. Cornet and L. Cerutti and M. Ramonda and A. Trampert and G. Patriarche and E. Tournie }, title = { Crystal phase control during epitaxial hybridization of III-V semiconductors with silicon }, journal = { Advanced Electronic Materials }, volume = { tba }, year = { 2021 }, pages = { 2100777 } }

TY - JOUR AU - M. Rio Calvo AU - J.-B. Rodriguez AU - C. Cornet AU - L. Cerutti AU - M. Ramonda AU - A. Trampert AU - G. Patriarche AU - E. Tournie TI - Crystal phase control during epitaxial hybridization of III-V semiconductors with silicon JF - Advanced Electronic Materials JA - Adv. Electron. Mater. J1 - Online ISSN: 2199-160X VL - tba SP - 2100777 PY - 2021/10/25

Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells

@article{ author = { Hanno Küpers and Ryan B. Lewis and Pierre Corfdir and Michael Niehle and T. Flissikowski and H. T. Grahn and A. Trampert and O. Brandt and L. Geelhaar }, title = { Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 50220 } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - Pierre Corfdir AU - Michael Niehle AU - T. Flissikowski AU - H. T. Grahn AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 50220 PY - 2021/10/13

Application of electron tomography for comprehensive determination of III-V interface properties

@article{ author = { L. Nicolai and K. Biermann and A. Trampert }, title = { Application of electron tomography for comprehensive determination of III-V interface properties }, journal = { Ultramicroscopy }, volume = { 224 }, year = { 2021 }, pages = { 113261 } }

TY - JOUR AU - L. Nicolai AU - K. Biermann AU - A. Trampert TI - Application of electron tomography for comprehensive determination of III-V interface properties JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 224 SP - 113261 PY - 2021/03/16

In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2

@article{ author = { M. Terker and L. Nicolai and S. Gaucher and J. Herfort and A. Trampert }, title = { In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 }, journal = { Journal of Physical Chemistry C }, volume = { 125 }, year = { 2021 }, pages = { 2779 } }

TY - JOUR AU - M. Terker AU - L. Nicolai AU - S. Gaucher AU - J. Herfort AU - A. Trampert TI - In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 125 SP - 2779 PY - 2021/01/25

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { Journal of Alloys and Compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

@article{ author = { Y. He and P. Tang and Z. Hu and Q. He and C. Zhu and L. Wang and Q. Zeng and P. Golani and G. Gao and W. Fu and Z. Huang and C. Gao and J. Xia and Xi. Wang and Xu. Wang and Q. M. Ramasse and A. Zhang and B. An and Y. Zhang and S. Martí-Sánchez and J. R. Morante and B. K. Tay and B. I. Yakobson and A. Trampert and H. Zhang and M. Wu and Q. J. Wang and J. Arbiol and Z. Liu }, title = { Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction }, journal = { Nature Communications }, volume = { 11 }, year = { 2020 }, pages = { 57 } }

TY - JOUR AU - Y. He AU - P. Tang AU - Z. Hu AU - Q. He AU - C. Zhu AU - L. Wang AU - Q. Zeng AU - P. Golani AU - G. Gao AU - W. Fu AU - Z. Huang AU - C. Gao AU - J. Xia AU - Xi. Wang AU - Xu. Wang AU - Q. M. Ramasse AU - A. Zhang AU - B. An AU - Y. Zhang AU - S. Martí-Sánchez AU - J. R. Morante AU - B. K. Tay AU - B. I. Yakobson AU - A. Trampert AU - H. Zhang AU - M. Wu AU - Q. J. Wang AU - J. Arbiol AU - Z. Liu TI - Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction JF - Nature Communications JA - Nat. Commun. J1 - VL - 11 SP - 57 PY - 2020/01/02