Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { journal of alloys and compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - journal of alloys and compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Strategies for Analyzing Non-Common-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

@article{ author = { E. Luna and A. Trampert and J.Lu and T. Aoki and Y.-H. Zhang and M. R. McCartney and D. J. Smith }, title = { Strategies for Analyzing Non-Common-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb }, journal = { Advanced Materials Interfaces }, volume = { 7 }, year = { 2020 }, pages = { 1901658 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J.Lu AU - T. Aoki AU - Y.-H. Zhang AU - M. R. McCartney AU - D. J. Smith TI - Strategies for Analyzing Non-Common-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb JF - Advanced Materials Interfaces JA - J1 - VL - 7 SP - 1901658 PY - 2020/01/01

In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

@article{ author = { M. Terker and B. Jenichen and J. Herfort and A. Trampert }, title = { In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124004 } }

TY - JOUR AU - M. Terker AU - B. Jenichen AU - J. Herfort AU - A. Trampert TI - In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124004 PY - 2019/11/15

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

@article{ author = { B. Jenichen and Z. Cheng and M. Hanke and J. Herfort and A. Trampert }, title = { Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124002 } }

TY - JOUR AU - B. Jenichen AU - Z. Cheng AU - M. Hanke AU - J. Herfort AU - A. Trampert TI - Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124002 PY - 2019/10/29

Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

@article{ author = { Miguel García-Tecedor and Javier Bartolomé and David Maestre and A. Trampert and Ana Cremades }, title = { Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission }, journal = { Nano Research }, volume = { 12 }, year = { 2019 }, pages = { 441 } }

TY - JOUR AU - Miguel García-Tecedor AU - Javier Bartolomé AU - David Maestre AU - A. Trampert AU - Ana Cremades TI - Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission JF - Nano Research JA - Nano Res. J1 - VL - 12 SP - 441 PY - 2019/10/26

Molecular-beam epitaxy of GaInSbBi alloys

@article{ author = { O. Delorme and L. Cerutti and E. Luna and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { Molecular-beam epitaxy of GaInSbBi alloys }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 155304 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - Molecular-beam epitaxy of GaInSbBi alloys JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 155304 PY - 2019/10/17

The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates

@article{ author = { M. Niehle and J.-B. Rodriguez and L. Cerutti and E. Tournie and A. Trampert }, title = { The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1900290 } }

TY - JOUR AU - M. Niehle AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie AU - A. Trampert TI - The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 13 SP - 1900290 PY - 2019/10/08

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { Ryan B. Lewis and A. Trampert and E. Luna and J. Herranz and Carsten Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - Ryan B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - Carsten Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16