Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

@article{ author = { Miguel García-Tecedor and Javier Bartolomé and David Maestre and A. Trampert and Ana Cremades }, title = { Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission }, journal = { Nano Research }, volume = { 12 }, year = { 2019 }, pages = { 441 } }

TY - JOUR AU - Miguel García-Tecedor AU - Javier Bartolomé AU - David Maestre AU - A. Trampert AU - Ana Cremades TI - Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission JF - Nano Research JA - Nano Res. J1 - VL - 12 SP - 441 PY - 2019/10/26

Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101)

@article{ author = { C.E. Simion and F. Schipani and A. Papadogianni and A. Stanoiu and M. Budde and A. Oprea and U. Weimar and O. Bierwagen and N. Barsan }, title = { Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) }, journal = { ACS Sensors }, volume = { tbd }, year = { 2019 }, pages = { tbd } }

TY - JOUR AU - C.E. Simion AU - F. Schipani AU - A. Papadogianni AU - A. Stanoiu AU - M. Budde AU - A. Oprea AU - U. Weimar AU - O. Bierwagen AU - N. Barsan TI - Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) JF - ACS Sensors JA - J1 - VL - tbd SP - tbd PY - 2019/08/15

Quantum rings engineered by atom manipulation

@article{ author = { V. D. Pham and K. Kanisawa and S. Fölsch }, title = { Quantum rings engineered by atom manipulation }, journal = { Physical Review Letters }, volume = { 123 }, year = { 2019 }, pages = { 066801 } }

TY - JOUR AU - V. D. Pham AU - K. Kanisawa AU - S. Fölsch TI - Quantum rings engineered by atom manipulation JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 123 SP - 066801 PY - 2019/08/06

Axial GaAs/Ga(As,Bi) nanowire heterostructures

@article{ author = { M. Oliva and G. Gao and E. Luna and L. Geelhaar and R. B. Lewis }, title = { Axial GaAs/Ga(As,Bi) nanowire heterostructures }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 425601 } }

TY - JOUR AU - M. Oliva AU - G. Gao AU - E. Luna AU - L. Geelhaar AU - R. B. Lewis TI - Axial GaAs/Ga(As,Bi) nanowire heterostructures JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 425601 PY - 2019/08/02

Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and S. Brackmann and S. Hillebrandt and W. Kowalsky and E. Mankel and R. Lovrincic and S. Fernández-Garrido }, title = { Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps }, journal = { Applied Surface Science }, volume = { 495 }, year = { 2019 }, pages = { 143514 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - S. Brackmann AU - S. Hillebrandt AU - W. Kowalsky AU - E. Mankel AU - R. Lovrincic AU - S. Fernández-Garrido TI - Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 495 SP - 143514 PY - 2019/08/02

Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15

Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and S. Ueda and M. Imura and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { 080903 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - S. Ueda AU - M. Imura AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - 080903 PY - 2019/07/12

Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires

@article{ author = { L. Nicolai and Ž. Gačević and E. Calleja and A. Trampert }, title = { Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires }, journal = { Nanoscale Research Letters }, volume = { 14 }, year = { 2019 }, pages = { 232 } }

TY - JOUR AU - L. Nicolai AU - Ž. Gačević AU - E. Calleja AU - A. Trampert TI - Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 14 SP - 232 PY - 2019/07/12

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

@article{ author = { F. Bastiman and H. Küpers and C. Somaschini and V.G. Dubrovskii and L. Geelhaar }, title = { Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 073401 } }

TY - JOUR AU - F. Bastiman AU - H. Küpers AU - C. Somaschini AU - V.G. Dubrovskii AU - L. Geelhaar TI - Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 3 SP - 073401 PY - 2019/07/09

Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves

@article{ author = { G. Hoffmann and J. Herfort and M. Ramsteiner }, title = { Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 074402 } }

TY - JOUR AU - G. Hoffmann AU - J. Herfort AU - M. Ramsteiner TI - Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 3 SP - 074402 PY - 2019/07/08

Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3

@article{ author = { J. Michel and D. Splith and J. Rombach and A. Papadogianni and T. Berthold and S. Krischok and M. Grundmann and O. Bierwagen and H. von Wenckstern and M. Himmerlich }, title = { Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 }, journal = { ACS Applied Materials and Interfaces }, volume = { 11 }, year = { 2019 }, pages = { 27073 } }

TY - JOUR AU - J. Michel AU - D. Splith AU - J. Rombach AU - A. Papadogianni AU - T. Berthold AU - S. Krischok AU - M. Grundmann AU - O. Bierwagen AU - H. von Wenckstern AU - M. Himmerlich TI - Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 11 SP - 27073 PY - 2019/07/04

Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures

@article{ author = { P.K. Patil and S. Shimomura and F. Ishikawa and E. Luna and M. Yoshimoto }, title = { Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 59 } }

TY - JOUR AU - P.K. Patil AU - S. Shimomura AU - F. Ishikawa AU - E. Luna AU - M. Yoshimoto TI - Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 59 PY - 2019/07/03

GaSbBi Alloys and Heterostructures: Fabrication and Properties

@article{ author = { O. Delorme and L. Cerutti and R. Kudrawiec and E. Luna and J. Kopaczek and M. Gladysiewicz and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { GaSbBi Alloys and Heterostructures: Fabrication and Properties }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 125 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - R. Kudrawiec AU - E. Luna AU - J. Kopaczek AU - M. Gladysiewicz AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - GaSbBi Alloys and Heterostructures: Fabrication and Properties JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 125 PY - 2019/07/03

Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric (K,Na)NbO3 thin films

@article{ author = { L. von Helden and L. Bogula and P.-E. Janolin and M. Hanke and T. Breuer and M. Schmidbauer and S. Ganschow and J. Schwarzkopf }, title = { Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric (K,Na)NbO3 thin films }, journal = { Applied Physics Letters }, volume = { 114 }, year = { 2019 }, pages = { 232905 } }

TY - JOUR AU - L. von Helden AU - L. Bogula AU - P.-E. Janolin AU - M. Hanke AU - T. Breuer AU - M. Schmidbauer AU - S. Ganschow AU - J. Schwarzkopf TI - Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric (K,Na)NbO3 thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 114 SP - 232905 PY - 2019/06/13

Sidewall Quantum Wires on GaAs(001) Substrates

@article{ author = { P. L. J. Helgers and H. Sanada and Y. Kunihashi and A. Rubino and C. J. B. Ford and K. Biermann and P. V. Santos }, title = { Sidewall Quantum Wires on GaAs(001) Substrates }, journal = { Physical Review Applied }, volume = { 11 }, year = { 2019 }, pages = { 064017 } }

TY - JOUR AU - P. L. J. Helgers AU - H. Sanada AU - Y. Kunihashi AU - A. Rubino AU - C. J. B. Ford AU - K. Biermann AU - P. V. Santos TI - Sidewall Quantum Wires on GaAs(001) Substrates JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 11 SP - 064017 PY - 2019/06/10

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

@article{ author = { D. v. Treeck and J. Ledig and G. Scholz and J. Lähnemann and M. Musolino and A. Tahraoui and O. Brandt and A. Waag and H. Riechert and L. Geelhaar }, title = { Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble }, journal = { Beilstein Journal of Nanotechnology }, volume = { 10 }, year = { 2019 }, pages = { 1177 } }

TY - JOUR AU - D. v. Treeck AU - J. Ledig AU - G. Scholz AU - J. Lähnemann AU - M. Musolino AU - A. Tahraoui AU - O. Brandt AU - A. Waag AU - H. Riechert AU - L. Geelhaar TI - Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble JF - Beilstein Journal of Nanotechnology JA - Beilstein J. Nanotechnol. J1 - VL - 10 SP - 1177 PY - 2019/06/05

Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires

@article{ author = { Philipp Schroth and Mahmoud Al Humaidi and Ludwig Feigl and Julian Jakob and Ali Al Hassan and Arman Davtyan and Hanno Küpers and A. Tahraoui and L. Geelhaar and Ullrich Pietsch and Tilo Baumbach }, title = { Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4263 } }

TY - JOUR AU - Philipp Schroth AU - Mahmoud Al Humaidi AU - Ludwig Feigl AU - Julian Jakob AU - Ali Al Hassan AU - Arman Davtyan AU - Hanno Küpers AU - A. Tahraoui AU - L. Geelhaar AU - Ullrich Pietsch AU - Tilo Baumbach TI - Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4263 PY - 2019/05/31

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment

@article{ author = { R. Kudrawiec and J. Kopaczek and O. Delorme and M.P.Polak and M. Gladysiewicz and E. Luna and L. Cerutti and E. Tournie and J.B.Rodriguez }, title = { Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 2055706 } }

TY - JOUR AU - R. Kudrawiec AU - J. Kopaczek AU - O. Delorme AU - M.P.Polak AU - M. Gladysiewicz AU - E. Luna AU - L. Cerutti AU - E. Tournie AU - J.B.Rodriguez TI - Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: photoreflectance studies of bandgap alignment JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 2055706 PY - 2019/05/30

Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells

@article{ author = { J. Lähnemann and M. O. Hill and J. Herranz and O. Marquardt and G. Gao and A. Al Hassan and A. Davtyan and S. O. Hruszkewycz and M. V. Holt and C. Huang and I. Calvo-Almazán and U. Jahn and U. Pietsch and L. J. Lauhon and L. Geelhaar }, title = { Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4448 } }

TY - JOUR AU - J. Lähnemann AU - M. O. Hill AU - J. Herranz AU - O. Marquardt AU - G. Gao AU - A. Al Hassan AU - A. Davtyan AU - S. O. Hruszkewycz AU - M. V. Holt AU - C. Huang AU - I. Calvo-Almazán AU - U. Jahn AU - U. Pietsch AU - L. J. Lauhon AU - L. Geelhaar TI - Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4448 PY - 2019/05/29

Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and M. Imura and S. Ueda and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { SDDG06 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - M. Imura AU - S. Ueda AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - SDDG06 PY - 2019/05/21

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

@article{ author = { S. Bin Anooz and A. Popp and R. Grüneberg and C. Wouters and M. Schmidbauer and M. Albrecht and A. Fiedler and M. Ramsteiner and D. Klimm and R. Schewski and K. Irmscher and Z. Galazka and G. Wagner }, title = { Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 195702 } }

TY - JOUR AU - S. Bin Anooz AU - A. Popp AU - R. Grüneberg AU - C. Wouters AU - M. Schmidbauer AU - M. Albrecht AU - A. Fiedler AU - M. Ramsteiner AU - D. Klimm AU - R. Schewski AU - K. Irmscher AU - Z. Galazka AU - G. Wagner TI - Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 195702 PY - 2019/05/20

Semiconductor optical waveguide devices modulated by surface acoustic waves

@article{ author = { A. Crespo-Poveda and D. D. Bühler and A. Cantarero Sáez and P. V. Santos and M. M. de Lima, Jr. }, title = { Semiconductor optical waveguide devices modulated by surface acoustic waves }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 253001 } }

TY - JOUR AU - A. Crespo-Poveda AU - D. D. Bühler AU - A. Cantarero Sáez AU - P. V. Santos AU - M. M. de Lima, Jr. TI - Semiconductor optical waveguide devices modulated by surface acoustic waves JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 52 SP - 253001 PY - 2019/05/20

Attractive Dipolar Coupling between Stacked Exciton Fluids

@article{ author = { C. Hubert and Y. Baruchi and Y. Mazuz-Harpaz and K.Cohen and K. Biermann and M. Lemeshko and K. West and L. Pfeiffer and R. Rapaport and P. V. Santos }, title = { Attractive Dipolar Coupling between Stacked Exciton Fluids }, journal = { Physical Review X }, volume = { 9 }, year = { 2019 }, pages = { 021026 } }

TY - JOUR AU - C. Hubert AU - Y. Baruchi AU - Y. Mazuz-Harpaz AU - K.Cohen AU - K. Biermann AU - M. Lemeshko AU - K. West AU - L. Pfeiffer AU - R. Rapaport AU - P. V. Santos TI - Attractive Dipolar Coupling between Stacked Exciton Fluids JF - Physical Review X JA - Phys. Rev. X J1 - PRX VL - 9 SP - 021026 PY - 2019/05/08

Acoustically modulated optical emission of hexagonal boron nitride layers

@article{ author = { F. Iikawa and A. Hernández-Mínguez and I. Aharonovich and S. Nakhaie and Y.-T. Liou and J. M. J. Lopes and P. V. Santos }, title = { Acoustically modulated optical emission of hexagonal boron nitride layers }, journal = { Applied Physics Letters }, volume = { 114 }, year = { 2019 }, pages = { 171104 } }

TY - JOUR AU - F. Iikawa AU - A. Hernández-Mínguez AU - I. Aharonovich AU - S. Nakhaie AU - Y.-T. Liou AU - J. M. J. Lopes AU - P. V. Santos TI - Acoustically modulated optical emission of hexagonal boron nitride layers JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 114 SP - 171104 PY - 2019/05/02

Ab initio and nuclear inelastic scattering studies of Fe3Si/GaAs heterostructures

@article{ author = { O. Sikora and J. Kalt and M. Sternik and A. Ptok and P. T. Jochym and J. Łazewski and P. Piekarz and K. Parlinski and I. Sergueev and H.-C. Wille and J. Herfort and B. Jenichen and T. Baumbach and S. Stankov }, title = { Ab initio and nuclear inelastic scattering studies of Fe3Si/GaAs heterostructures }, journal = { Physical Review B: Solid State }, volume = { 99 }, year = { 2019 }, pages = { 134303 } }

TY - JOUR AU - O. Sikora AU - J. Kalt AU - M. Sternik AU - A. Ptok AU - P. T. Jochym AU - J. Łazewski AU - P. Piekarz AU - K. Parlinski AU - I. Sergueev AU - H.-C. Wille AU - J. Herfort AU - B. Jenichen AU - T. Baumbach AU - S. Stankov TI - Ab initio and nuclear inelastic scattering studies of Fe3Si/GaAs heterostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 99 SP - 134303 PY - 2019/04/11

Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends

@article{ author = { V. Hortelano and H. Weidlich and W. T. Masselink and Y. Takagaki }, title = { Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 145301 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - W. T. Masselink AU - Y. Takagaki TI - Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 145301 PY - 2019/04/08

Terahertz quantum-cascade lasers for high-resolution spectroscopy of sharp absorption lines

@article{ author = { B. Röben and X. Lü and K. Biermann and L. Schrottke and H. T. Grahn }, title = { Terahertz quantum-cascade lasers for high-resolution spectroscopy of sharp absorption lines }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 151613 } }

TY - JOUR AU - B. Röben AU - X. Lü AU - K. Biermann AU - L. Schrottke AU - H. T. Grahn TI - Terahertz quantum-cascade lasers for high-resolution spectroscopy of sharp absorption lines JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 151613 PY - 2019/04/05

Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy

@article{ author = { S. Nakhaie and M. Heilmann and T. Krause and M. Hanke and J. M. J. Lopes }, title = { Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 115301 } }

TY - JOUR AU - S. Nakhaie AU - M. Heilmann AU - T. Krause AU - M. Hanke AU - J. M. J. Lopes TI - Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 115301 PY - 2019/03/15

Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene

@article{ author = { L. Mancini and M. Morassi and C. Sinito and O. Brandt and L. Geelhaar and H.G. Song and Y.H. Cho and N. Guan and A. Madouri and C. Barbier and L. Largeau and A. Babichev and F.H. Julien and L. Travers and F. Oehler and N. Gogneau and J.C. Harmand and M. Tchernycheva }, title = { Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 214005 } }

TY - JOUR AU - L. Mancini AU - M. Morassi AU - C. Sinito AU - O. Brandt AU - L. Geelhaar AU - H.G. Song AU - Y.H. Cho AU - N. Guan AU - A. Madouri AU - C. Barbier AU - L. Largeau AU - A. Babichev AU - F.H. Julien AU - L. Travers AU - F. Oehler AU - N. Gogneau AU - J.C. Harmand AU - M. Tchernycheva TI - Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 214005 PY - 2019/03/14

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

@article{ author = { S. Fernández-Garrido and T. Auzelle and J. Lähnemann and K. Wimmer and A. Tahraoui and O. Brandt }, title = { Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation }, journal = { Nanoscale Advances }, volume = { 1 }, year = { 2019 }, pages = { 1893 } }

TY - JOUR AU - S. Fernández-Garrido AU - T. Auzelle AU - J. Lähnemann AU - K. Wimmer AU - A. Tahraoui AU - O. Brandt TI - Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 1 SP - 1893 PY - 2019/03/12

Electron spin dynamics in mesoscopic GaN nanowires

@article{ author = { J. H. Buß and S. Fernández-Garrido and O. Brandt and D. Hägele and J. Rudolph }, title = { Electron spin dynamics in mesoscopic GaN nanowires }, journal = { Applied Physics Letters }, volume = { 114 }, year = { 2019 }, pages = { 092406 } }

TY - JOUR AU - J. H. Buß AU - S. Fernández-Garrido AU - O. Brandt AU - D. Hägele AU - J. Rudolph TI - Electron spin dynamics in mesoscopic GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 114 SP - 092406 PY - 2019/03/08

Crystallization study of Ge-rich (GeTe)m(Sb2Te3)n using two steps annealing process

@article{ author = { F. Di Biagio and S. Cecchi and F. Arciprete and R. Calarco }, title = { Crystallization study of Ge-rich (GeTe)m(Sb2Te3)n using two steps annealing process }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { issue 1800632 }, year = { 2019 }, pages = { 1 } }

TY - JOUR AU - F. Di Biagio AU - S. Cecchi AU - F. Arciprete AU - R. Calarco TI - Crystallization study of Ge-rich (GeTe)m(Sb2Te3)n using two steps annealing process JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - issue 1800632 SP - 1 PY - 2019/02/19

Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy

@article{ author = { G. Hoffmann and B. Jenichen and J. Herfort }, title = { Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 512 }, year = { 2019 }, pages = { 194 } }

TY - JOUR AU - G. Hoffmann AU - B. Jenichen AU - J. Herfort TI - Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 512 SP - 194 PY - 2019/02/15

Wideband, high-resolution terahertz spectroscopy by light-induced frequency tuning of quantum-cascade lasers

@article{ author = { T. Alam and M. Wienold and X. Lü and K. Biermann and L. Schrottke and H. T. Grahn and H.-W. Hübers }, title = { Wideband, high-resolution terahertz spectroscopy by light-induced frequency tuning of quantum-cascade lasers }, journal = { Optics Express }, volume = { 27 }, year = { 2019 }, pages = { 5420 } }

TY - JOUR AU - T. Alam AU - M. Wienold AU - X. Lü AU - K. Biermann AU - L. Schrottke AU - H. T. Grahn AU - H.-W. Hübers TI - Wideband, high-resolution terahertz spectroscopy by light-induced frequency tuning of quantum-cascade lasers JF - Optics Express JA - Opt. Express J1 - VL - 27 SP - 5420 PY - 2019/02/13

Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies

@article{ author = { M. Sobanska and Z. R. Zytkiewicz and G. Calabrese and L. Geelhaar and S. Fernández-Garrido }, title = { Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 154002 } }

TY - JOUR AU - M. Sobanska AU - Z. R. Zytkiewicz AU - G. Calabrese AU - L. Geelhaar AU - S. Fernández-Garrido TI - Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 154002 PY - 2019/02/12

MBE Growth of Graphene

@article{ author = { J. M. J. Lopes }, title = { MBE Growth of Graphene }, journal = { Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics, First Edition. }, volume = { 24 }, year = { 2019 }, pages = { 395 } }

TY - JOUR AU - J. M. J. Lopes TI - MBE Growth of Graphene JF - Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics, First Edition. JA - J1 - VL - 24 SP - 395 PY - 2019/02/08

Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells

@article{ author = { H. Küpers and P. Corfdir and R. B. Lewis and T. Flissikowski and A. Tahraoui and H. T. Grahn and O. Brandt and L. Geelhaar }, title = { Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1800527 } }

TY - JOUR AU - H. Küpers AU - P. Corfdir AU - R. B. Lewis AU - T. Flissikowski AU - A. Tahraoui AU - H. T. Grahn AU - O. Brandt AU - L. Geelhaar TI - Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 13 SP - 1800527 PY - 2019/02/07

Noise put to use

@article{ author = { S. Ludwig }, title = { Noise put to use }, journal = { Nature Physics }, volume = { 15 }, year = { 2019 }, pages = { 310 } }

TY - JOUR AU - S. Ludwig TI - Noise put to use JF - Nature Physics JA - Nature Phys. J1 - VL - 15 SP - 310 PY - 2019/02/04

Self-assembled triangular graphene nanostructures: Evidence of dual electronic response

@article{ author = { Thais Chagas and Marta Pelc and Pedro H.R. Gonçalves and Igor Antoniazzi and Jhon W. González and Andres Ayuela and J. M. J. Lopes and Myriano H. Oliveira, Jr. and Rogerio Magalhães-Paniago and Angelo Malachias }, title = { Self-assembled triangular graphene nanostructures: Evidence of dual electronic response }, journal = { Carbon }, volume = { 142 }, year = { 2019 }, pages = { 580 } }

TY - JOUR AU - Thais Chagas AU - Marta Pelc AU - Pedro H.R. Gonçalves AU - Igor Antoniazzi AU - Jhon W. González AU - Andres Ayuela AU - J. M. J. Lopes AU - Myriano H. Oliveira, Jr. AU - Rogerio Magalhães-Paniago AU - Angelo Malachias TI - Self-assembled triangular graphene nanostructures: Evidence of dual electronic response JF - Carbon JA - Carbon J1 - VL - 142 SP - 580 PY - 2019/02/01

Controlling interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. v. Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Controlling interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. v. Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Controlling interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

@article{ author = { Y. Pan and S. Fölsch and Y.-C. Lin and B. Jariwala and J. A. Robinson and Y. Nie and K. Cho and R. M. Feenstra }, title = { WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates }, journal = { 2D Materials }, volume = { 6 }, year = { 2019 }, pages = { 021001 } }

TY - JOUR AU - Y. Pan AU - S. Fölsch AU - Y.-C. Lin AU - B. Jariwala AU - J. A. Robinson AU - Y. Nie AU - K. Cho AU - R. M. Feenstra TI - WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates JF - 2D Materials JA - 2D Mater. J1 - VL - 6 SP - 021001 PY - 2019/01/17

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

@article{ author = { P. Corfdir and O. Marquardt and R. B. Lewis and C. Sinito and M. Ramsteiner and A. Trampert and U. Jahn and L. Geelhaar and O. Brandt and V. M. Fomin }, title = { Excitonic Aharonov-Bohm oscillations in core-shell nanowires }, journal = { Advanced Materials }, volume = { 31 }, year = { 2019 }, pages = { 1805645 } }

TY - JOUR AU - P. Corfdir AU - O. Marquardt AU - R. B. Lewis AU - C. Sinito AU - M. Ramsteiner AU - A. Trampert AU - U. Jahn AU - L. Geelhaar AU - O. Brandt AU - V. M. Fomin TI - Excitonic Aharonov-Bohm oscillations in core-shell nanowires JF - Advanced Materials JA - Adv. Mater. J1 - VL - 31 SP - 1805645 PY - 2019/01/15

Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition

@article{ author = { T. Auzelle and G. Calabrese and S. Fernández-Garrido }, title = { Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 013402 } }

TY - JOUR AU - T. Auzelle AU - G. Calabrese AU - S. Fernández-Garrido TI - Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 3 SP - 013402 PY - 2019/01/09

3D GaN Fins as a Versatile Platform for a-Plane-Based Devices

@article{ author = { J. Hartmann and I. Manglano Clavero and L. Nicolai and C. Margenfeld and H. Spende and J. Ledig and H. Zhou and F. Steib and A. Jaros and A. Avramescu and M. Strassburg and A. Trampert and H.-H. Wehmann and H.-J. Lugauer and T. Voss and A. Waag }, title = { 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices }, journal = { Physica Status Solidi B }, volume = { 256 }, year = { 2019 }, pages = { 1800477 } }

TY - JOUR AU - J. Hartmann AU - I. Manglano Clavero AU - L. Nicolai AU - C. Margenfeld AU - H. Spende AU - J. Ledig AU - H. Zhou AU - F. Steib AU - A. Jaros AU - A. Avramescu AU - M. Strassburg AU - A. Trampert AU - H.-H. Wehmann AU - H.-J. Lugauer AU - T. Voss AU - A. Waag TI - 3D GaN Fins as a Versatile Platform for a-Plane-Based Devices JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 256 SP - 1800477 PY - 2019/01/07

Quantification of propagating and standing surface acoustic waves by stroboscopic X-ray photoemission electron microscopy

@article{ author = { M. Foerster and N. Statuto and B. Casals and A. Hernández-Mínguez and S. Finizio and A. Mandziak and L. Aballe and J. M. Hernàndez Ferràs and F. Macià }, title = { Quantification of propagating and standing surface acoustic waves by stroboscopic X-ray photoemission electron microscopy }, journal = { Journal of Synchrotron Radiation }, volume = { 26 }, year = { 2019 }, pages = { 184 } }

TY - JOUR AU - M. Foerster AU - N. Statuto AU - B. Casals AU - A. Hernández-Mínguez AU - S. Finizio AU - A. Mandziak AU - L. Aballe AU - J. M. Hernàndez Ferràs AU - F. Macià TI - Quantification of propagating and standing surface acoustic waves by stroboscopic X-ray photoemission electron microscopy JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 26 SP - 184 PY - 2019/01/01