Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

@article{ author = { N. Ruiz and D. Fernandez and L. Stanojevic and T. Ben and S. Flores and V. Braza and A. Gallego and E. Luna and J.M. Ulloa and D. Gonzalez }, title = { Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications }, journal = { Nanomaterials }, volume = { 12 }, year = { 2022 }, pages = { 1368 } }

TY - JOUR AU - N. Ruiz AU - D. Fernandez AU - L. Stanojevic AU - T. Ben AU - S. Flores AU - V. Braza AU - A. Gallego AU - E. Luna AU - J.M. Ulloa AU - D. Gonzalez TI - Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications JF - Nanomaterials JA - Nanomaterials J1 - ISSN 2079-4991 VL - 12 SP - 1368 PY - 2022/04/15

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

@article{ author = { T. Auzelle and C. Sinito and J. Lähnemann and G. Gao and T. Flissikowski and A. Trampert and O. Brandt and S. Fernández-Garrido }, title = { Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 4 } }

TY - JOUR AU - T. Auzelle AU - C. Sinito AU - J. Lähnemann AU - G. Gao AU - T. Flissikowski AU - A. Trampert AU - O. Brandt AU - S. Fernández-Garrido TI - Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 4 PY - 2022/04/15

Determining amplitudes of standing surface acoustic waves via atomic force microscopy

@article{ author = { J. Hellemann and F. Müller and M. Msall and P. V. Santos and S. Ludwig }, title = { Determining amplitudes of standing surface acoustic waves via atomic force microscopy }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 044024 } }

TY - JOUR AU - J. Hellemann AU - F. Müller AU - M. Msall AU - P. V. Santos AU - S. Ludwig TI - Determining amplitudes of standing surface acoustic waves via atomic force microscopy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 044024 PY - 2022/04/13

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified 13C graphene

@article{ author = { V. Strenzke and J.M. Meyer and I. Grandt-Ionita and M. Prada and H.-S. Kim and M. Heilmann and J. M. J. Lopes and L. Tiemann and R.H. Blick }, title = { Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified 13C graphene }, journal = { Physical Review B: Solid State }, volume = { 105 }, year = { 2022 }, pages = { 144303 } }

TY - JOUR AU - V. Strenzke AU - J.M. Meyer AU - I. Grandt-Ionita AU - M. Prada AU - H.-S. Kim AU - M. Heilmann AU - J. M. J. Lopes AU - L. Tiemann AU - R.H. Blick TI - Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified 13C graphene JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 105 SP - 144303 PY - 2022/04/07

Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations

@article{ author = { N. Buczek and M. Hanke and P. Buczek and M. Dubslaff and A.A. Tonkikh and B. Fuhrmann and H.S. Leipner }, title = { Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations }, journal = { AIP Advances }, volume = { 12 }, year = { 2022 }, pages = { 045006 } }

TY - JOUR AU - N. Buczek AU - M. Hanke AU - P. Buczek AU - M. Dubslaff AU - A.A. Tonkikh AU - B. Fuhrmann AU - H.S. Leipner TI - Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations JF - AIP Advances JA - AIP Adv. J1 - VL - 12 SP - 045006 PY - 2022/04/01

Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation

@article{ author = { V. D. Pham and Y. Pan and S. C. Erwin and F. von Oppen and K. Kanisawa and S. Fölsch }, title = { Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation }, journal = { Physical Review B: Solid State }, volume = { 105 }, year = { 2022 }, pages = { 125418 } }

TY - JOUR AU - V. D. Pham AU - Y. Pan AU - S. C. Erwin AU - F. von Oppen AU - K. Kanisawa AU - S. Fölsch TI - Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 105 SP - 125418 PY - 2022/03/28

Experimental evidence of a mixed amorphous-crystalline graphene/SiC interface due to oxygen-intercalation

@article{ author = { M.V. Goncalves-Faria and E.A. Soares and I. Antoniazzi and R. Magalhães-Paniago and R.H. Miwa and J. M. J. Lopes and A. Malachias and M.H. Oliveira Jr. }, title = { Experimental evidence of a mixed amorphous-crystalline graphene/SiC interface due to oxygen-intercalation }, journal = { Surfaces and Interfaces }, volume = { 30 }, year = { 2022 }, pages = { 101906 } }

TY - JOUR AU - M.V. Goncalves-Faria AU - E.A. Soares AU - I. Antoniazzi AU - R. Magalhães-Paniago AU - R.H. Miwa AU - J. M. J. Lopes AU - A. Malachias AU - M.H. Oliveira Jr. TI - Experimental evidence of a mixed amorphous-crystalline graphene/SiC interface due to oxygen-intercalation JF - Surfaces and Interfaces JA - Surf. Interfaces J1 - VL - 30 SP - 101906 PY - 2022/03/22

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

@article{ author = { K. Tetzner and K. O. Egbo and M. Klupsch and R.-S. Unger and A. Popp and T.-S. Chou and S. Bin Anooz and Z. Galazka and A. Trampert and O. Bierwagen and J Würfl }, title = { SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 112110 } }

TY - JOUR AU - K. Tetzner AU - K. O. Egbo AU - M. Klupsch AU - R.-S. Unger AU - A. Popp AU - T.-S. Chou AU - S. Bin Anooz AU - Z. Galazka AU - A. Trampert AU - O. Bierwagen AU - J Würfl TI - SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 112110 PY - 2022/03/18

Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

@article{ author = { A. Papadogianni and C. Wouters and R. Schewski and J. Feldl and J. Lähnemann and T. Nagata and M. Feneberg and E. Kluth and R. Goldhahn and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity }, journal = { Physical Review Materials }, volume = { 6 }, year = { 2022 }, pages = { 033604 } }

TY - JOUR AU - A. Papadogianni AU - C. Wouters AU - R. Schewski AU - J. Feldl AU - J. Lähnemann AU - T. Nagata AU - M. Feneberg AU - E. Kluth AU - R. Goldhahn AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 6 SP - 033604 PY - 2022/03/14

Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires

@article{ author = { M. Hanke and C. Richter and F. Lange and A. Reis and J. Parker and T. Boeck }, title = { Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 101902 } }

TY - JOUR AU - M. Hanke AU - C. Richter AU - F. Lange AU - A. Reis AU - J. Parker AU - T. Boeck TI - Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 101902 PY - 2022/03/10

Crystallization and electrical properties of Ge-rich GeSbTe alloys

@article{ author = { S. Cecchi and I. Lopez Garcia and A. M. Mio and E. Zallo and O. Abou El Kheir and R. Calarco and M. Bernasconi and G. Nicotra and S. M. S. Privitera }, title = { Crystallization and electrical properties of Ge-rich GeSbTe alloys }, journal = { Nanomaterials }, volume = { 12 }, year = { 2022 }, pages = { 631 } }

TY - JOUR AU - S. Cecchi AU - I. Lopez Garcia AU - A. M. Mio AU - E. Zallo AU - O. Abou El Kheir AU - R. Calarco AU - M. Bernasconi AU - G. Nicotra AU - S. M. S. Privitera TI - Crystallization and electrical properties of Ge-rich GeSbTe alloys JF - Nanomaterials JA - Nanomaterials J1 - ISSN 2079-4991 VL - 12 SP - 631 PY - 2022/02/14

Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects

@article{ author = { C. A. Bravo-Velazquez and L. F. Lastras-Martinez and O. Ruiz-Cigarrillo and G. Flores-Rangel and L. E. Tapia-Rodríguez and K. Biermann and P. V. Santos }, title = { Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects }, journal = { Physica Status Solidi B }, volume = { tba }, year = { 2022 }, pages = { 2100612 } }

TY - JOUR AU - C. A. Bravo-Velazquez AU - L. F. Lastras-Martinez AU - O. Ruiz-Cigarrillo AU - G. Flores-Rangel AU - L. E. Tapia-Rodríguez AU - K. Biermann AU - P. V. Santos TI - Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - tba SP - 2100612 PY - 2022/02/12

APL Materials Roadmap – beta-Gallium Oxide Power Electronics

@article{ author = { A. J. Green and J. S. Speck and H. G. Xing and P. Moens and F. Allerstam and K. Gumaelius and T. Neyer and A. Arias-Purdue and V. Mehrotra and A. Kuramata and K. Sasaki and S. Watanabe and K. Kimiyoshi and J. D. Blevins and O. Bierwagen and S. Krishnamoorthy and K. Leedy and A. R. Arehart and A. T. Neal and S. Mou and S. A. Ringel and W. Li and K. D. Chabak and K. Liddy and A. E. Islam and S. Rajan and S. Graham and S. Choi and Z. Cheng and M. Higashiwaki }, title = { APL Materials Roadmap – beta-Gallium Oxide Power Electronics }, journal = { APL Materials }, volume = { 10 }, year = { 2022 }, pages = { 029201 } }

TY - JOUR AU - A. J. Green AU - J. S. Speck AU - H. G. Xing AU - P. Moens AU - F. Allerstam AU - K. Gumaelius AU - T. Neyer AU - A. Arias-Purdue AU - V. Mehrotra AU - A. Kuramata AU - K. Sasaki AU - S. Watanabe AU - K. Kimiyoshi AU - J. D. Blevins AU - O. Bierwagen AU - S. Krishnamoorthy AU - K. Leedy AU - A. R. Arehart AU - A. T. Neal AU - S. Mou AU - S. A. Ringel AU - W. Li AU - K. D. Chabak AU - K. Liddy AU - A. E. Islam AU - S. Rajan AU - S. Graham AU - S. Choi AU - Z. Cheng AU - M. Higashiwaki TI - APL Materials Roadmap – beta-Gallium Oxide Power Electronics JF - APL Materials JA - APL Mater. J1 - APLM VL - 10 SP - 029201 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

@article{ author = { J. Lähnemann and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and U. Jahn and C. Chèze and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024019 } }

TY - JOUR AU - J. Lähnemann AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - U. Jahn AU - C. Chèze AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024019 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion

@article{ author = { O. Brandt and V. M. Kaganer and J. Lähnemann and T. Flissikowski and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and C. Chèze and R. Calarco and H. T. Grahn and U. Jahn }, title = { Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024018 } }

TY - JOUR AU - O. Brandt AU - V. M. Kaganer AU - J. Lähnemann AU - T. Flissikowski AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - U. Jahn TI - Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024018 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume

@article{ author = { U. Jahn and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and J. Lähnemann and C. Pfüller and C. Chèze and K. Biermann and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024017 } }

TY - JOUR AU - U. Jahn AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - J. Lähnemann AU - C. Pfüller AU - C. Chèze AU - K. Biermann AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024017 PY - 2022/02/07

Hints for a general understanding of the epitaxial rules for van der Waals epitaxy from Ge-Sb-Te alloys

@article{ author = { F. Arciprete and Boschker, J. E. and S. Cecchi and Zallo, E. and Bragaglia, V. and Calarco, R. }, title = { Hints for a general understanding of the epitaxial rules for van der Waals epitaxy from Ge-Sb-Te alloys }, journal = { Advanced Materials Interfaces }, volume = { 9 }, year = { 2022 }, pages = { 2101556 } }

TY - JOUR AU - F. Arciprete AU - Boschker, J. E. AU - S. Cecchi AU - Zallo, E. AU - Bragaglia, V. AU - Calarco, R. TI - Hints for a general understanding of the epitaxial rules for van der Waals epitaxy from Ge-Sb-Te alloys JF - Advanced Materials Interfaces JA - J1 - VL - 9 SP - 2101556 PY - 2022/02/06

GHz guided optomechanics in planar semiconductor microcavities

@article{ author = { A. Crespo-Poveda and A. S. Kuznetsov and A. Hernández-Mínguez and A. Tahraoui and K. Biermann and P. V. Santos }, title = { GHz guided optomechanics in planar semiconductor microcavities }, journal = { Optica }, volume = { 9 }, year = { 2022 }, pages = { 160 } }

TY - JOUR AU - A. Crespo-Poveda AU - A. S. Kuznetsov AU - A. Hernández-Mínguez AU - A. Tahraoui AU - K. Biermann AU - P. V. Santos TI - GHz guided optomechanics in planar semiconductor microcavities JF - Optica JA - Optica J1 - VL - 9 SP - 160 PY - 2022/02/02

Emergent interface vibrational structure of oxide superlattices

@article{ author = { E. R. Hoglund and D.-L. Bao and A. O'Hara and S. Makarem and Z. T. Piontkowski and J. R. Matson and A. K. Yadav and R. C. Haislmaier and R. Engel-Herbert and J. F. Ihlefeld and J. Ravichandran and R. Ramesh and J. D. Caldwell and T. E. Beechem and J. A. Tomko and J. A. Hachtel and S. T. Pantelides and P. E. Hopkins and J. M. Howe }, title = { Emergent interface vibrational structure of oxide superlattices }, journal = { Nature }, volume = { 601 }, year = { 2022 }, pages = { 556 } }

TY - JOUR AU - E. R. Hoglund AU - D.-L. Bao AU - A. O'Hara AU - S. Makarem AU - Z. T. Piontkowski AU - J. R. Matson AU - A. K. Yadav AU - R. C. Haislmaier AU - R. Engel-Herbert AU - J. F. Ihlefeld AU - J. Ravichandran AU - R. Ramesh AU - J. D. Caldwell AU - T. E. Beechem AU - J. A. Tomko AU - J. A. Hachtel AU - S. T. Pantelides AU - P. E. Hopkins AU - J. M. Howe TI - Emergent interface vibrational structure of oxide superlattices JF - Nature JA - Nature J1 - Nat VL - 601 SP - 556 PY - 2022/01/26

The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer

@article{ author = { A. Papadogianni and T. Nagata and O. Bierwagen }, title = { The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 61 }, year = { 2022 }, pages = { 045502 } }

TY - JOUR AU - A. Papadogianni AU - T. Nagata AU - O. Bierwagen TI - The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 61 SP - 045502 PY - 2022/01/25

Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3

@article{ author = { P. Seyidov and M. Ramsteiner and Z. Galazka and K. Irmscher }, title = { Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3 }, journal = { Journal of Applied Physics }, volume = { 131 }, year = { 2022 }, pages = { 035707 } }

TY - JOUR AU - P. Seyidov AU - M. Ramsteiner AU - Z. Galazka AU - K. Irmscher TI - Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3 JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 131 SP - 035707 PY - 2022/01/20

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

@article{ author = { R. Volkov and N. Borgardt and O. Konovalov and S. Fernández-Garrido and O. Brandt and V. M. Kaganer }, title = { Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) }, journal = { Nanoscale Advances }, volume = { 4 }, year = { 2022 }, pages = { 562 } }

TY - JOUR AU - R. Volkov AU - N. Borgardt AU - O. Konovalov AU - S. Fernández-Garrido AU - O. Brandt AU - V. M. Kaganer TI - Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 4 SP - 562 PY - 2022/01/18