Acousto-optical multiple interference devices

@article{ author = { M. Beck and M. M. de Lima Jr. and P. V. Santos }, title = { Acousto-optical multiple interference devices }, journal = { Journal of Applied Physics }, volume = { 103 }, year = { 2008 }, pages = { 014505 } }

TY - JOUR AU - M. Beck AU - M. M. de Lima Jr. AU - P. V. Santos TI - Acousto-optical multiple interference devices JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 103 SP - 014505 PY - 2008/01/01

Narrow-band photodetection based on M-plane GaN films

@article{ author = { S. Ghosh and C. Rivera and J. L. Pau and E. Munoz and O. Brandt and H.T. Grahn }, title = { Narrow-band photodetection based on <em>M</em>-plane GaN films }, journal = { Physica Status Solidi A }, volume = { 205 }, year = { 2008 }, pages = { 1100 } }

TY - JOUR AU - S. Ghosh AU - C. Rivera AU - J. L. Pau AU - E. Munoz AU - O. Brandt AU - H.T. Grahn TI - Narrow-band photodetection based on <em>M</em>-plane GaN films JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 205 SP - 1100 PY - 2008/01/01

Optically induced strain relaxation in anisotropically strained M-plane GaN films

@article{ author = { T. Flissikowski and O. Brandt and P. Misra and H.T. Grahn }, title = { Optically induced strain relaxation in anisotropically strained <em>M</em>-plane GaN films }, journal = { Physica Status Solidi B }, volume = { 245 }, year = { 2008 }, pages = { 913 } }

TY - JOUR AU - T. Flissikowski AU - O. Brandt AU - P. Misra AU - H.T. Grahn TI - Optically induced strain relaxation in anisotropically strained <em>M</em>-plane GaN films JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 245 SP - 913 PY - 2008/01/01

Optically induced relaxation of anisotropically strained M-plane GaN films on LiAlO₂

@article{ author = { T. Flissikowski and O. Brandt and P. Misra and H.T. Grahn }, title = { Optically induced relaxation of anisotropically strained <em>M</em>-plane GaN films on LiAlO₂ }, journal = { Journal of Applied Physics }, volume = { 104 }, year = { 2008 }, pages = { 063507 } }

TY - JOUR AU - T. Flissikowski AU - O. Brandt AU - P. Misra AU - H.T. Grahn TI - Optically induced relaxation of anisotropically strained <em>M</em>-plane GaN films on LiAlO₂ JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 104 SP - 063507 PY - 2008/01/01

Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs

@article{ author = { E. Luna and A. Trampert and J. Miguel-Sanchez and A. Guzman and K. H. Ploog }, title = { Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs }, journal = { Journal of Physics and Chemistry of Solids }, volume = { 69 }, year = { 2008 }, pages = { 343 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J. Miguel-Sanchez AU - A. Guzman AU - K. H. Ploog TI - Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (111)B GaAs JF - Journal of Physics and Chemistry of Solids JA - J. Phys. Chem. Solids J1 - VL - 69 SP - 343 PY - 2008/01/01

Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(001) heterostructures studied by analytical transmission electron microscopy

@article{ author = { X. Kong and A. Trampert and K. H. Ploog }, title = { Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(001) heterostructures studied by analytical transmission electron microscopy }, journal = { Journal of Physics and Chemistry of Solids }, volume = { 69 }, year = { 2008 }, pages = { 335 } }

TY - JOUR AU - X. Kong AU - A. Trampert AU - K. H. Ploog TI - Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(001) heterostructures studied by analytical transmission electron microscopy JF - Journal of Physics and Chemistry of Solids JA - J. Phys. Chem. Solids J1 - VL - 69 SP - 335 PY - 2008/01/01

Quantum Hall effect in a high-mobility two-dimensional electron gas on a cylindrical surface

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and A. Riedel and D. Maude }, title = { Quantum Hall effect in a high-mobility two-dimensional electron gas on a cylindrical surface }, journal = { Journal of Physics: Conference Series }, volume = { 100 }, year = { 2008 }, pages = { 042023 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - A. Riedel AU - D. Maude TI - Quantum Hall effect in a high-mobility two-dimensional electron gas on a cylindrical surface JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 100 SP - 042023 PY - 2008/01/01

Electron trajectories on a cylindrical surface studied by ballistic transport and quantum Hall effect measurements

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and A. Riedel and D. K. Maude }, title = { Electron trajectories on a cylindrical surface studied by ballistic transport and quantum Hall effect measurements }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 40 }, year = { 2008 }, pages = { 1087 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - A. Riedel AU - D. K. Maude TI - Electron trajectories on a cylindrical surface studied by ballistic transport and quantum Hall effect measurements JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 40 SP - 1087 PY - 2008/01/01

Longitudinal commensurable resistance oscillations in the ballistic transport of electrons on cylindrical surfaces

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and A. Riedel }, title = { Longitudinal commensurable resistance oscillations in the ballistic transport of electrons on cylindrical surfaces }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 2850 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - A. Riedel TI - Longitudinal commensurable resistance oscillations in the ballistic transport of electrons on cylindrical surfaces JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 2850 PY - 2008/01/01

Homogeneous nucleation of opposite moving dipole domains and current self-oscillations in undoped photoexcited superlattices

@article{ author = { J. I. Arana and L. L. Bonilla and H.T. Grahn }, title = { Homogeneous nucleation of opposite moving dipole domains and current self-oscillations in undoped photoexcited superlattices }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 40 }, year = { 2008 }, pages = { 1209 } }

TY - JOUR AU - J. I. Arana AU - L. L. Bonilla AU - H.T. Grahn TI - Homogeneous nucleation of opposite moving dipole domains and current self-oscillations in undoped photoexcited superlattices JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 40 SP - 1209 PY - 2008/01/01

Spin-Hall effect and spin coherent waves in semiconductors with Rashba spin-orbit interaction

@article{ author = { P. Kleinert and V. V. Bryksin }, title = { Spin-Hall effect and spin coherent waves in semiconductors with Rashba spin-orbit interaction }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 310 } }

TY - JOUR AU - P. Kleinert AU - V. V. Bryksin TI - Spin-Hall effect and spin coherent waves in semiconductors with Rashba spin-orbit interaction JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 310 PY - 2008/01/01

GaN films and (In,Ga)N/GaN multiple quantum wells with nonpolar surfaces: Optical polarization properties

@article{ author = { H.T. Grahn }, title = { GaN films and (In,Ga)N/GaN multiple quantum wells with nonpolar surfaces: Optical polarization properties }, journal = { Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) }, volume = { }, year = { 2008 }, pages = { 155 } }

TY - JOUR AU - H.T. Grahn TI - GaN films and (In,Ga)N/GaN multiple quantum wells with nonpolar surfaces: Optical polarization properties JF - Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) JA - Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) J1 - VL - SP - 155 PY - 2008/01/01

Dipole-dipole interaction in square arrays of MnAs nanodisks on GaAs(001)

@article{ author = { Y. Takagaki and C. Herrmann and E. Wiebicke }, title = { Dipole-dipole interaction in square arrays of MnAs nanodisks on GaAs(001) }, journal = { Journal of Physics: Condensed Matter }, volume = { 20 }, year = { 2008 }, pages = { 225007 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - E. Wiebicke TI - Dipole-dipole interaction in square arrays of MnAs nanodisks on GaAs(001) JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 20 SP - 225007 PY - 2008/01/01

Spin-orbit dependence on carrier momentum in (110) GaAs quantum wells

@article{ author = { O. D. D. Couto and J. Rudolph and F. Iikawa and R. Hey and P. V. Santos }, title = { Spin-orbit dependence on carrier momentum in (110) GaAs quantum wells }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 40 }, year = { 2008 }, pages = { 1797 } }

TY - JOUR AU - O. D. D. Couto AU - J. Rudolph AU - F. Iikawa AU - R. Hey AU - P. V. Santos TI - Spin-orbit dependence on carrier momentum in (110) GaAs quantum wells JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 40 SP - 1797 PY - 2008/01/01

Quantum well and cavity structures grown on (110)GaAs by MBE

@article{ author = { R. Hey and U. Jahn and Q. Wan and A. Trampert }, title = { Quantum well and cavity structures grown on (110)GaAs by MBE }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 2917 } }

TY - JOUR AU - R. Hey AU - U. Jahn AU - Q. Wan AU - A. Trampert TI - Quantum well and cavity structures grown on (110)GaAs by MBE JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 2917 PY - 2008/01/01

Transmission electron microscopy study of Sb-based quantum dots

@article{ author = { B. Satpati and V. Tasco and N. Deguffroy and A. N. Baranov and E. Tournie and A. Trampert }, title = { Transmission electron microscopy study of Sb-based quantum dots }, journal = { Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) }, volume = { }, year = { 2008 }, pages = { 251 } }

TY - JOUR AU - B. Satpati AU - V. Tasco AU - N. Deguffroy AU - A. N. Baranov AU - E. Tournie AU - A. Trampert TI - Transmission electron microscopy study of Sb-based quantum dots JF - Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) JA - Proc. ICMSM 15 J1 - VL - SP - 251 PY - 2008/01/01

Magnetic and structural properties of ultrathin epitaxial Fe₃Si films on GaAs(001)

@article{ author = { J. Herfort and H.-P. Schönherr and B. Jenichen }, title = { Magnetic and structural properties of ultrathin epitaxial Fe₃Si films on GaAs(001) }, journal = { Journal of Applied Physics }, volume = { 103 }, year = { 2008 }, pages = { 07B506 } }

TY - JOUR AU - J. Herfort AU - H.-P. Schönherr AU - B. Jenichen TI - Magnetic and structural properties of ultrathin epitaxial Fe₃Si films on GaAs(001) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 103 SP - 07B506 PY - 2008/01/01

GaN films and quantum wells with nonpolar surfaces: Growth and structural properties

@article{ author = { O. Brandt }, title = { GaN films and quantum wells with nonpolar surfaces: Growth and structural properties }, journal = { Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) }, volume = { }, year = { 2008 }, pages = { 119 } }

TY - JOUR AU - O. Brandt TI - GaN films and quantum wells with nonpolar surfaces: Growth and structural properties JF - Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) JA - Nitrides with nonpolar surfaces: Growth, properties and devices; edited by T. Paskova (WILEY-VCH, Weinheim, 2008) J1 - VL - SP - 119 PY - 2008/01/01

Optical emission and Rayleigh scattering in semiconductor superlattices in magnetic fields

@article{ author = { M. Amado and V. Bellani and E. Diez and C. Koerdt and P. Plochocka-Polak and M. Potemski and R. Hey }, title = { Optical emission and Rayleigh scattering in semiconductor superlattices in magnetic fields }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 40 }, year = { 2008 }, pages = { 1374 } }

TY - JOUR AU - M. Amado AU - V. Bellani AU - E. Diez AU - C. Koerdt AU - P. Plochocka-Polak AU - M. Potemski AU - R. Hey TI - Optical emission and Rayleigh scattering in semiconductor superlattices in magnetic fields JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 40 SP - 1374 PY - 2008/01/01

In situ x-ray diffraction study of epitaxial growth of ordered Fe₃Si films

@article{ author = { B. Jenichen and V. M. Kaganer and W. Braun and R. Shayduk and B. Tinkham and J. Herfort }, title = { In situ x-ray diffraction study of epitaxial growth of ordered Fe₃Si films }, journal = { Journal of Materials Science: Materials in Electronics }, volume = { 19 }, year = { 2008 }, pages = { S199 } }

TY - JOUR AU - B. Jenichen AU - V. M. Kaganer AU - W. Braun AU - R. Shayduk AU - B. Tinkham AU - J. Herfort TI - In situ x-ray diffraction study of epitaxial growth of ordered Fe₃Si films JF - Journal of Materials Science: Materials in Electronics JA - J. Mater. Sci. J1 - VL - 19 SP - S199 PY - 2008/01/01

Acoustic charge and spin transport in GaAs quantum wires

@article{ author = { F. Alsina and J. A. H. Stotz and R. Hey and U. Jahn and P. V. Santos }, title = { Acoustic charge and spin transport in GaAs quantum wires }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 2907 } }

TY - JOUR AU - F. Alsina AU - J. A. H. Stotz AU - R. Hey AU - U. Jahn AU - P. V. Santos TI - Acoustic charge and spin transport in GaAs quantum wires JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 2907 PY - 2008/01/01

Photo- and electroluminescence from GaInNAs/GaAs single quantum wells and light emitting diodes

@article{ author = { A. Hierro and J. M. Ulloa and J. Miguel-Sanchez and A. Guzman and A. Trampert and E. Tournie }, title = { Photo- and electroluminescence from GaInNAs/GaAs single quantum wells and light emitting diodes }, journal = { Nitrides and Dilute Nitrides: Growth, Physics and Devices; edited by J. Miguel-S'anchez (Transworld Research Network, Trivandrum, 2007) }, volume = { }, year = { 2008 }, pages = { 77 } }

TY - JOUR AU - A. Hierro AU - J. M. Ulloa AU - J. Miguel-Sanchez AU - A. Guzman AU - A. Trampert AU - E. Tournie TI - Photo- and electroluminescence from GaInNAs/GaAs single quantum wells and light emitting diodes JF - Nitrides and Dilute Nitrides: Growth, Physics and Devices; edited by J. Miguel-S'anchez (Transworld Research Network, Trivandrum, 2007) JA - NDNGPD J1 - VL - SP - 77 PY - 2008/01/01

Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells

@article{ author = { E. Luna and A. Trampert and E.-M. Pavelescu and M. Pessa }, title = { Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells }, journal = { Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) }, volume = { }, year = { 2008 }, pages = { 99 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - E.-M. Pavelescu AU - M. Pessa TI - Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells JF - Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials 2007; edited by A. G. Cullis and P. A. Midgley (Springer, Dordrecht, 2007) JA - Proc. ICMSM 15 J1 - VL - SP - 99 PY - 2008/01/01

Structure of Fe₃Si/GaAs(001) epitaxial films from x-ray crystal truncation rods

@article{ author = { V. M. Kaganer and B. Jenichen and R. Shayduk and W. Braun }, title = { Structure of Fe₃Si/GaAs(001) epitaxial films from x-ray crystal truncation rods }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 125325 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - R. Shayduk AU - W. Braun TI - Structure of Fe₃Si/GaAs(001) epitaxial films from x-ray crystal truncation rods JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 125325 PY - 2008/01/01

Spin wave excitations in Fe films grown on GaAs(113)A substrates

@article{ author = { P. K. Muduli and J. Herfort and H.-P. Schönherr and K. H. Ploog }, title = { Spin wave excitations in Fe films grown on GaAs(113)A substrates }, journal = { Journal of Magnetism and Magnetic Materials }, volume = { 320 }, year = { 2008 }, pages = { 2835 } }

TY - JOUR AU - P. K. Muduli AU - J. Herfort AU - H.-P. Schönherr AU - K. H. Ploog TI - Spin wave excitations in Fe films grown on GaAs(113)A substrates JF - Journal of Magnetism and Magnetic Materials JA - J. Magn. Magn. Mater. J1 - JMMM VL - 320 SP - 2835 PY - 2008/01/01

Carrier spin polarization in digital Mn/GaAs ferromagnetic structures studied with hot electron photoluminescence

@article{ author = { V. F. Sapega and A. Trampert and K. H. Ploog }, title = { Carrier spin polarization in digital Mn/GaAs ferromagnetic structures studied with hot electron photoluminescence }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 245301 } }

TY - JOUR AU - V. F. Sapega AU - A. Trampert AU - K. H. Ploog TI - Carrier spin polarization in digital Mn/GaAs ferromagnetic structures studied with hot electron photoluminescence JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 245301 PY - 2008/01/01

Type II transition in InSb-based nanostructures for midinfrared applications

@article{ author = { R. Intartaglia and G. Rainò and V. Tasco and F. Della Sala and R. Cingolani and A. N. Baranov and N. Deguffroy and E. Tournie and B. Satpati and A. Trampert and M. De Giorgi }, title = { Type II transition in InSb-based nanostructures for midinfrared applications }, journal = { Journal of Applied Physics }, volume = { 103 }, year = { 2008 }, pages = { 114516 } }

TY - JOUR AU - R. Intartaglia AU - G. Rainò AU - V. Tasco AU - F. Della Sala AU - R. Cingolani AU - A. N. Baranov AU - N. Deguffroy AU - E. Tournie AU - B. Satpati AU - A. Trampert AU - M. De Giorgi TI - Type II transition in InSb-based nanostructures for midinfrared applications JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 103 SP - 114516 PY - 2008/01/01

Structural and optical properties of vertically stacked triple InAs dot-in-well structure

@article{ author = { G. Rainò and A. Salhi and V. Tasco and M. De Vittorio and A. Passaseo and R. Cingolani and M. De Giorgi and E. Luna and A. Trampert }, title = { Structural and optical properties of vertically stacked triple InAs dot-in-well structure }, journal = { Journal of Applied Physics }, volume = { 103 }, year = { 2008 }, pages = { 096107 } }

TY - JOUR AU - G. Rainò AU - A. Salhi AU - V. Tasco AU - M. De Vittorio AU - A. Passaseo AU - R. Cingolani AU - M. De Giorgi AU - E. Luna AU - A. Trampert TI - Structural and optical properties of vertically stacked triple InAs dot-in-well structure JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 103 SP - 096107 PY - 2008/01/01

Efficient electrical detection of ambipolar acoustic transport in GaAs

@article{ author = { P. D. Batista and R. Hey and P. V. Santos }, title = { Efficient electrical detection of ambipolar acoustic transport in GaAs }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 262108 } }

TY - JOUR AU - P. D. Batista AU - R. Hey AU - P. V. Santos TI - Efficient electrical detection of ambipolar acoustic transport in GaAs JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 262108 PY - 2008/01/01

(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001)

@article{ author = { T. Ive and O. Brandt and X. Kong and A. Trampert and K. H. Ploog }, title = { (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 035311 } }

TY - JOUR AU - T. Ive AU - O. Brandt AU - X. Kong AU - A. Trampert AU - K. H. Ploog TI - (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 035311 PY - 2008/01/01

Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)

@article{ author = { M. Moreno and A. Kumar and M. Tallarida and A. Ney and K. H. Ploog and K. Horn }, title = { Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) }, journal = { Journal of Vacuum Science and Technology B }, volume = { 26 }, year = { 2008 }, pages = { 1530 } }

TY - JOUR AU - M. Moreno AU - A. Kumar AU - M. Tallarida AU - A. Ney AU - K. H. Ploog AU - K. Horn TI - Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 26 SP - 1530 PY - 2008/01/01

Staircase model of GaSb(001) (13) and c(26) phases

@article{ author = { O. Romanyuk and V. M. Kaganer and R. Shayduk and B. P. Tinkham and W. Braun }, title = { Staircase model of GaSb(001) (13) and c(26) phases }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 235322 } }

TY - JOUR AU - O. Romanyuk AU - V. M. Kaganer AU - R. Shayduk AU - B. P. Tinkham AU - W. Braun TI - Staircase model of GaSb(001) (13) and c(26) phases JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 235322 PY - 2008/01/01

Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization

@article{ author = { Y. Takagaki and C. Herrmann and B. Jenichen and O. Brandt }, title = { Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 064115 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - B. Jenichen AU - O. Brandt TI - Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 064115 PY - 2008/01/01

Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum wells

@article{ author = { K. Fujiwara and U. Jahn and H.T. Grahn }, title = { Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum wells }, journal = { Applied Physics Letters }, volume = { 93 }, year = { 2008 }, pages = { 103504 } }

TY - JOUR AU - K. Fujiwara AU - U. Jahn AU - H.T. Grahn TI - Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 93 SP - 103504 PY - 2008/01/01

Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

@article{ author = { J. Bhattacharyya and S. Ghosh and H.T. Grahn }, title = { Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation }, journal = { Applied Physics Letters }, volume = { 93 }, year = { 2008 }, pages = { 051913 } }

TY - JOUR AU - J. Bhattacharyya AU - S. Ghosh AU - H.T. Grahn TI - Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 93 SP - 051913 PY - 2008/01/01

Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd

@article{ author = { A. Ney and T. Kammermeier and V. Ney and S. Ye and K. Ollefs and E. Manuel and S. Dhar and K. H. Ploog and E. Arenholz and F. Wilhelm and A. Rogalev }, title = { Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 233308 } }

TY - JOUR AU - A. Ney AU - T. Kammermeier AU - V. Ney AU - S. Ye AU - K. Ollefs AU - E. Manuel AU - S. Dhar AU - K. H. Ploog AU - E. Arenholz AU - F. Wilhelm AU - A. Rogalev TI - Element specific magnetic properties of Gd-doped GaN: Very small polarization of Ga and paramagnetism of Gd JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 233308 PY - 2008/01/01

Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment

@article{ author = { M. Ramsteiner and O. Brandt and T. Flissikowski and H.T. Grahn and M. Hashimoto and J. Herfort and H. Kostial }, title = { Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 121303(R) } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - T. Flissikowski AU - H.T. Grahn AU - M. Hashimoto AU - J. Herfort AU - H. Kostial TI - Co₂FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 121303(R) PY - 2008/01/01

Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy

@article{ author = { Y. Takagaki and C. Herrmann and B. Jenichen and J. Herfort and O. Brandt }, title = { Growth of <em>M</em>-plane MnAs on GaAs(111)B by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 101918 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - B. Jenichen AU - J. Herfort AU - O. Brandt TI - Growth of <em>M</em>-plane MnAs on GaAs(111)B by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 101918 PY - 2008/01/01

Conformational switching of single 1,5 cyclooctadiene molecules on Si(001) induced by inelastic electron tunneling

@article{ author = { C. Nacci and J. Lagoute and X. Liu and S. Fölsch }, title = { Conformational switching of single 1,5 cyclooctadiene molecules on Si(001) induced by inelastic electron tunneling }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 121405(R) } }

TY - JOUR AU - C. Nacci AU - J. Lagoute AU - X. Liu AU - S. Fölsch TI - Conformational switching of single 1,5 cyclooctadiene molecules on Si(001) induced by inelastic electron tunneling JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 121405(R) PY - 2008/01/01

Electron propagation along Cu nanowires supported on a Cu(111) surface

@article{ author = { S. Díaz-Tendero and S. Fölsch and F. E. Olsson and A. G. Borisov and J.-P. Gauyacq }, title = { Electron propagation along Cu nanowires supported on a Cu(111) surface }, journal = { Nano Letters }, volume = { 8 }, year = { 2008 }, pages = { 2712 } }

TY - JOUR AU - S. Díaz-Tendero AU - S. Fölsch AU - F. E. Olsson AU - A. G. Borisov AU - J.-P. Gauyacq TI - Electron propagation along Cu nanowires supported on a Cu(111) surface JF - Nano Letters JA - Nano Lett. J1 - VL - 8 SP - 2712 PY - 2008/01/01

Bistability of single 1,5 cyclooctadiene molecules on Si(001)

@article{ author = { C. Nacci and J. Lagoute and X. Liu and S. Fölsch }, title = { Bistability of single 1,5 cyclooctadiene molecules on Si(001) }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 93 }, year = { 2008 }, pages = { 313 } }

TY - JOUR AU - C. Nacci AU - J. Lagoute AU - X. Liu AU - S. Fölsch TI - Bistability of single 1,5 cyclooctadiene molecules on Si(001) JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 93 SP - 313 PY - 2008/01/01

Long-time evolution of the photoluminescence in C- and M-plane GaN/AlN quantum dots upon intense ultra-violet irradiation

@article{ author = { O. Brandt and T. Flissikowski and D. M. Schaadt and U. Jahn and A. Trampert and H.T. Grahn }, title = { Long-time evolution of the photoluminescence in <em>C</em>- and <em>M</em>-plane GaN/AlN quantum dots upon intense ultra-violet irradiation }, journal = { Applied Physics Letters }, volume = { 93 }, year = { 2008 }, pages = { 081907 } }

TY - JOUR AU - O. Brandt AU - T. Flissikowski AU - D. M. Schaadt AU - U. Jahn AU - A. Trampert AU - H.T. Grahn TI - Long-time evolution of the photoluminescence in <em>C</em>- and <em>M</em>-plane GaN/AlN quantum dots upon intense ultra-violet irradiation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 93 SP - 081907 PY - 2008/01/01

ZnO/SiO₂ microcavity modulator on silicon

@article{ author = { P. D. Batista and B. Drescher and W. Seidel and J. Rudolph and S. Jiao and P. V. Santos }, title = { ZnO/SiO₂ microcavity modulator on silicon }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 133502 } }

TY - JOUR AU - P. D. Batista AU - B. Drescher AU - W. Seidel AU - J. Rudolph AU - S. Jiao AU - P. V. Santos TI - ZnO/SiO₂ microcavity modulator on silicon JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 133502 PY - 2008/01/01

Magnetoelectric effects in semiconductor quantum wells with Rashba and Dresselhaus spin-orbit interaction

@article{ author = { P. Kleinert and V. V. Bryksin }, title = { Magnetoelectric effects in semiconductor quantum wells with Rashba and Dresselhaus spin-orbit interaction }, journal = { Solid State Communications }, volume = { 146 }, year = { 2008 }, pages = { 438 } }

TY - JOUR AU - P. Kleinert AU - V. V. Bryksin TI - Magnetoelectric effects in semiconductor quantum wells with Rashba and Dresselhaus spin-orbit interaction JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 146 SP - 438 PY - 2008/01/01

Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

@article{ author = { E. Luna and F. Ishikawa and P. D. Batista and A. Trampert }, title = { Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 141913 } }

TY - JOUR AU - E. Luna AU - F. Ishikawa AU - P. D. Batista AU - A. Trampert TI - Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 141913 PY - 2008/01/01

Electronic states in arsenic-decapped MnAs (1|100) films grown on GaAs(001): A photoemission spectroscopy study

@article{ author = { M. Moreno and A. Kumar and M. Tallarida and K. Horn and A. Ney and K. H. Ploog }, title = { Electronic states in arsenic-decapped MnAs (1|100) films grown on GaAs(001): A photoemission spectroscopy study }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 084103 } }

TY - JOUR AU - M. Moreno AU - A. Kumar AU - M. Tallarida AU - K. Horn AU - A. Ney AU - K. H. Ploog TI - Electronic states in arsenic-decapped MnAs (1|100) films grown on GaAs(001): A photoemission spectroscopy study JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 084103 PY - 2008/01/01

Spin dynamics in single-molecule magnets combining surface acoustic waves and high-frequency electron paramagnetic resonance

@article{ author = { F. Macià and J. Lawrence and S. Hill and J. M. Hernandez and J. Tejada and P. V. Santos and C. Lampropoulos and G. Christou }, title = { Spin dynamics in single-molecule magnets combining surface acoustic waves and high-frequency electron paramagnetic resonance }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 020403(R) } }

TY - JOUR AU - F. Macià AU - J. Lawrence AU - S. Hill AU - J. M. Hernandez AU - J. Tejada AU - P. V. Santos AU - C. Lampropoulos AU - G. Christou TI - Spin dynamics in single-molecule magnets combining surface acoustic waves and high-frequency electron paramagnetic resonance JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 020403(R) PY - 2008/01/01

Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks

@article{ author = { U. Jahn and E. Calleja and J. Ristic and A. Trampert and C. Rivera }, title = { Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 2164 } }

TY - JOUR AU - U. Jahn AU - E. Calleja AU - J. Ristic AU - A. Trampert AU - C. Rivera TI - Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 2164 PY - 2008/01/01

Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density

@article{ author = { I. Shlimak and K.-J. Friedland and S. V. Kravchenko and V. Ginodman and A. Butenko and T. M. Klapwijk }, title = { Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density }, journal = { Physica Status Solidi C }, volume = { 5 }, year = { 2008 }, pages = { 839 } }

TY - JOUR AU - I. Shlimak AU - K.-J. Friedland AU - S. V. Kravchenko AU - V. Ginodman AU - A. Butenko AU - T. M. Klapwijk TI - Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 5 SP - 839 PY - 2008/01/01

Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN

@article{ author = { T. Kammermeier and S. Dhar and V. Ney and E. Manuel and A. Ney and K. H. Ploog and F.-Y. Lo and A. Melnikov and A. D. Wieck }, title = { Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN }, journal = { Physica Status Solidi A }, volume = { 205 }, year = { 2008 }, pages = { 1872 } }

TY - JOUR AU - T. Kammermeier AU - S. Dhar AU - V. Ney AU - E. Manuel AU - A. Ney AU - K. H. Ploog AU - F.-Y. Lo AU - A. Melnikov AU - A. D. Wieck TI - Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 205 SP - 1872 PY - 2008/01/01

Gallium nitride heterostructures on 3D structured silicon

@article{ author = { S. Fündling and Ü. Sökmen and E. Peiner and T. Weimann and P. Hinze and U. Jahn and A. Trampert and H. Riechert and A. Bakin and H.-H. Wehmann and A. Waag }, title = { Gallium nitride heterostructures on 3D structured silicon }, journal = { Nanotechnology }, volume = { 19 }, year = { 2008 }, pages = { 405301 } }

TY - JOUR AU - S. Fündling AU - Ü. Sökmen AU - E. Peiner AU - T. Weimann AU - P. Hinze AU - U. Jahn AU - A. Trampert AU - H. Riechert AU - A. Bakin AU - H.-H. Wehmann AU - A. Waag TI - Gallium nitride heterostructures on 3D structured silicon JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 19 SP - 405301 PY - 2008/01/01

Enhanced spin coherence via mesoscopic confinement during acoustically induced transport

@article{ author = { J. A. H. Stotz and R. Hey and P. V. Santos and K. H. Ploog }, title = { Enhanced spin coherence via mesoscopic confinement during acoustically induced transport }, journal = { New Journal Physics }, volume = { 10 }, year = { 2008 }, pages = { 093013 } }

TY - JOUR AU - J. A. H. Stotz AU - R. Hey AU - P. V. Santos AU - K. H. Ploog TI - Enhanced spin coherence via mesoscopic confinement during acoustically induced transport JF - New Journal Physics JA - New J. Phys. J1 - VL - 10 SP - 093013 PY - 2008/01/01

Metastable magnetism and memory effects in dilute magnetic semiconductors

@article{ author = { A. Ney and R. Rajaram and T. Kammermeier and V. Ney and S. Dhar and K. H. Ploog and S. S. P. Parkin }, title = { Metastable magnetism and memory effects in dilute magnetic semiconductors }, journal = { Journal of Physics: Condensed Matter }, volume = { 20 }, year = { 2008 }, pages = { 285222 } }

TY - JOUR AU - A. Ney AU - R. Rajaram AU - T. Kammermeier AU - V. Ney AU - S. Dhar AU - K. H. Ploog AU - S. S. P. Parkin TI - Metastable magnetism and memory effects in dilute magnetic semiconductors JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 20 SP - 285222 PY - 2008/01/01

Linear increase of the modal gain in 1.3 μm InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers

@article{ author = { A. Salhi and G. Rainò and L. Fortunato and V. Tasco and L. Martiradonna and M. T. Todaro and M. De Giorgi and R. Cingolani and A. Passaseo and E. Luna and A. Trampert and M. De Vittorio }, title = { Linear increase of the modal gain in 1.3 <span class="math"><em>μ</em></span>m InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers }, journal = { Nanotechnology }, volume = { 19 }, year = { 2008 }, pages = { 275401 } }

TY - JOUR AU - A. Salhi AU - G. Rainò AU - L. Fortunato AU - V. Tasco AU - L. Martiradonna AU - M. T. Todaro AU - M. De Giorgi AU - R. Cingolani AU - A. Passaseo AU - E. Luna AU - A. Trampert AU - M. De Vittorio TI - Linear increase of the modal gain in 1.3 <span class="math"><em>μ</em></span>m InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 19 SP - 275401 PY - 2008/01/01

Electron transport in a slot-gate Si MOSFET

@article{ author = { I. Shlimak and V. Ginodman and A. Butenko and K.-J. Friedland and S. V. Kravchenko }, title = { Electron transport in a slot-gate Si MOSFET }, journal = { Europhysics Letters }, volume = { 82 }, year = { 2008 }, pages = { 47001 } }

TY - JOUR AU - I. Shlimak AU - V. Ginodman AU - A. Butenko AU - K.-J. Friedland AU - S. V. Kravchenko TI - Electron transport in a slot-gate Si MOSFET JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 82 SP - 47001 PY - 2008/01/01

Low temperature transport and specific heat studies of Nd_1-xPb_xMnO₃ single crystals

@article{ author = { N. Ghosh and U. K. Rößler and K. Nenkov and C. Hucho and H. L. Bhat and K.-H. Müller }, title = { Low temperature transport and specific heat studies of Nd_1-xPb_xMnO₃ single crystals }, journal = { Journal of Physics: Condensed Matter }, volume = { 20 }, year = { 2008 }, pages = { 395219 } }

TY - JOUR AU - N. Ghosh AU - U. K. Rößler AU - K. Nenkov AU - C. Hucho AU - H. L. Bhat AU - K.-H. Müller TI - Low temperature transport and specific heat studies of Nd_1-xPb_xMnO₃ single crystals JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 20 SP - 395219 PY - 2008/01/01

As-rich InAs(001)-(24) phases investigated by extitin situ surface x-ray diffraction

@article{ author = { B. P. Tinkham and W. Braun and K. H. Ploog and M. Takahasi and J. Mizuki and F. Grosse }, title = { As-rich InAs(001)-(24) phases investigated by extitin situ surface x-ray diffraction }, journal = { Journal of Vacuum Science and Technology B }, volume = { 26 }, year = { 2008 }, pages = { 1516 } }

TY - JOUR AU - B. P. Tinkham AU - W. Braun AU - K. H. Ploog AU - M. Takahasi AU - J. Mizuki AU - F. Grosse TI - As-rich InAs(001)-(24) phases investigated by extitin situ surface x-ray diffraction JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 26 SP - 1516 PY - 2008/01/01

Carrier-wave Rabi flopping on radiatively coupled shallow donor transitions in n-type GaAs

@article{ author = { P. Gaal and W. Kuehn and K. Reimann and M. Woerner and T. Elsaesser and R. Hey and J. S. Lee and U. Schade }, title = { Carrier-wave Rabi flopping on radiatively coupled shallow donor transitions in n-type GaAs }, journal = { Physical Review B: Solid State }, volume = { 77 }, year = { 2008 }, pages = { 235204 } }

TY - JOUR AU - P. Gaal AU - W. Kuehn AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - R. Hey AU - J. S. Lee AU - U. Schade TI - Carrier-wave Rabi flopping on radiatively coupled shallow donor transitions in n-type GaAs JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 77 SP - 235204 PY - 2008/01/01

Erratum: of M-plane MnAs on GaAs(111)B by molecular beam epitaxy [Appl. Phys. Lett. 92, 101918 (2008)]

@article{ author = { Y. Takagaki and C. Herrmann and B. Jenichen and J. Herfort and O. Brandt }, title = { Erratum: of <em>M</em>-plane MnAs on GaAs(111)B by molecular beam epitaxy [Appl. Phys. Lett. 92, 101918 (2008)] }, journal = { Applied Physics Letters }, volume = { 92 }, year = { 2008 }, pages = { 179901 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - B. Jenichen AU - J. Herfort AU - O. Brandt TI - Erratum: of <em>M</em>-plane MnAs on GaAs(111)B by molecular beam epitaxy [Appl. Phys. Lett. 92, 101918 (2008)] JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 92 SP - 179901 PY - 2008/01/01

Large spin diffusion length in an amorphous organic semiconductor

@article{ author = { J. H. Shim and K. V. Raman and Y. J. Park and T. S. Santos and G. X. Miao and B. Satpati and J. S. Moodera }, title = { Large spin diffusion length in an amorphous organic semiconductor }, journal = { Physical Review Letters }, volume = { 100 }, year = { 2008 }, pages = { 226603 } }

TY - JOUR AU - J. H. Shim AU - K. V. Raman AU - Y. J. Park AU - T. S. Santos AU - G. X. Miao AU - B. Satpati AU - J. S. Moodera TI - Large spin diffusion length in an amorphous organic semiconductor JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 100 SP - 226603 PY - 2008/01/01

Post-deposition growth kinetics of Ge on Ge(001)

@article{ author = { B.P. Tinkham and B. Jenichen and V. M. Kaganer and R. Shayduk and W. Braun and K. H. Ploog }, title = { Post-deposition growth kinetics of Ge on Ge(001) }, journal = { Journal of Crystal Growth }, volume = { 310 }, year = { 2008 }, pages = { 3416 } }

TY - JOUR AU - B.P. Tinkham AU - B. Jenichen AU - V. M. Kaganer AU - R. Shayduk AU - W. Braun AU - K. H. Ploog TI - Post-deposition growth kinetics of Ge on Ge(001) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 310 SP - 3416 PY - 2008/01/01

Praseodymium silicide formation at the Pr₂O₃/Si interface

@article{ author = { T. Watahiki and B. P. Tinkham and B. Jenichen and R. Shayduk and W. Braun and K. H. Ploog }, title = { Praseodymium silicide formation at the Pr₂O₃/Si interface }, journal = { Applied Surface Science }, volume = { 255 }, year = { 2008 }, pages = { 758 } }

TY - JOUR AU - T. Watahiki AU - B. P. Tinkham AU - B. Jenichen AU - R. Shayduk AU - W. Braun AU - K. H. Ploog TI - Praseodymium silicide formation at the Pr₂O₃/Si interface JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 255 SP - 758 PY - 2008/01/01

Spin dynamics in (110) GaAs quantum wells under surface acoustic waves

@article{ author = { O. D. D. Couto Jr. and R. Hey and P. V. Santos }, title = { Spin dynamics in (110) GaAs quantum wells under surface acoustic waves }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 153305 } }

TY - JOUR AU - O. D. D. Couto Jr. AU - R. Hey AU - P. V. Santos TI - Spin dynamics in (110) GaAs quantum wells under surface acoustic waves JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 153305 PY - 2008/01/01

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

@article{ author = { S. Fernández-Garrido and A. Redondo-Cubero and R. Gago and F. Bertram and J. Christen and E. Luna and A. Trampert and J. Pereiro and E. Munoz and E. Calleja }, title = { Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 104 }, year = { 2008 }, pages = { 083510 } }

TY - JOUR AU - S. Fernández-Garrido AU - A. Redondo-Cubero AU - R. Gago AU - F. Bertram AU - J. Christen AU - E. Luna AU - A. Trampert AU - J. Pereiro AU - E. Munoz AU - E. Calleja TI - Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 104 SP - 083510 PY - 2008/01/01

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

@article{ author = { J. Ristic and E. Calleja and S. Fernández-Garrido and L. Cerutti and A. Trampert and U. Jahn and K. H. Ploog }, title = { On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 310 }, year = { 2008 }, pages = { 4035 } }

TY - JOUR AU - J. Ristic AU - E. Calleja AU - S. Fernández-Garrido AU - L. Cerutti AU - A. Trampert AU - U. Jahn AU - K. H. Ploog TI - On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 310 SP - 4035 PY - 2008/01/01

Phonon-induced quantum magnetic deflagration in Mn₁₂

@article{ author = { A. Hernández-Mínguez and F. Macià and J. M. Hernandez and J. Tejada and P. V. Santos }, title = { Phonon-induced quantum magnetic deflagration in Mn₁₂ }, journal = { Journal of Magnetism and Magnetic Materials }, volume = { 320 }, year = { 2008 }, pages = { 1457 } }

TY - JOUR AU - A. Hernández-Mínguez AU - F. Macià AU - J. M. Hernandez AU - J. Tejada AU - P. V. Santos TI - Phonon-induced quantum magnetic deflagration in Mn₁₂ JF - Journal of Magnetism and Magnetic Materials JA - J. Magn. Magn. Mater. J1 - JMMM VL - 320 SP - 1457 PY - 2008/01/01

Fidelity of the charge transport by surface acoustic waves in a GaAs quantum well

@article{ author = { V. I. Talyanskii and V. Kachkanov and P. V. Santos }, title = { Fidelity of the charge transport by surface acoustic waves in a GaAs quantum well }, journal = { Semiconductor Science and Technology }, volume = { 23 }, year = { 2008 }, pages = { 125017 } }

TY - JOUR AU - V. I. Talyanskii AU - V. Kachkanov AU - P. V. Santos TI - Fidelity of the charge transport by surface acoustic waves in a GaAs quantum well JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 23 SP - 125017 PY - 2008/01/01

Enhanced performances of quantum dot lasers operating at 1.3 μm

@article{ author = { A. Salhi and G. Rainò and L. Fortunato and V. Tasco and G. Visimberga and L. Martiradonna and M. T. Todaro and M. De Giorgi and R. Cingolani and A. Trampert and M. De Vittorio and A. Passaseo }, title = { Enhanced performances of quantum dot lasers operating at 1.3 <span class="math"><em>μ</em></span>m }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 14 }, year = { 2008 }, pages = { 1188 } }

TY - JOUR AU - A. Salhi AU - G. Rainò AU - L. Fortunato AU - V. Tasco AU - G. Visimberga AU - L. Martiradonna AU - M. T. Todaro AU - M. De Giorgi AU - R. Cingolani AU - A. Trampert AU - M. De Vittorio AU - A. Passaseo TI - Enhanced performances of quantum dot lasers operating at 1.3 <span class="math"><em>μ</em></span>m JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 14 SP - 1188 PY - 2008/01/01

Impact of nitrogen ion density on the optical and structural properties of MBE grown GaInNAs/GaAs (100) and (111)B quantum wells

@article{ author = { J. Miguel-Sanchez and A. Guzman and A. Hierro and E. Munoz and U. Jahn and A. Trampert }, title = { Impact of nitrogen ion density on the optical and structural properties of MBE grown GaInNAs/GaAs (100) and (111)B quantum wells }, journal = { Dilute III-V Nitride Semiconductors and Material Systems; edited by A. Erol (Springer Series in Materials Science 105, 2008) }, volume = { }, year = { 2008 }, pages = { 35 } }

TY - JOUR AU - J. Miguel-Sanchez AU - A. Guzman AU - A. Hierro AU - E. Munoz AU - U. Jahn AU - A. Trampert TI - Impact of nitrogen ion density on the optical and structural properties of MBE grown GaInNAs/GaAs (100) and (111)B quantum wells JF - Dilute III-V Nitride Semiconductors and Material Systems; edited by A. Erol (Springer Series in Materials Science 105, 2008) JA - D35NSMS J1 - VL - SP - 35 PY - 2008/01/01

Stress-modified structural and electronic properties of epitaxial MnAs layers on GaAs

@article{ author = { Y. Takagaki and C. Herrmann and J. Herfort and C. Hucho and K.-J. Friedland }, title = { Stress-modified structural and electronic properties of epitaxial MnAs layers on GaAs }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 235207 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - J. Herfort AU - C. Hucho AU - K.-J. Friedland TI - Stress-modified structural and electronic properties of epitaxial MnAs layers on GaAs JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 235207 PY - 2008/01/01

Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

@article{ author = { F. Ishikawa and A. Guzman and O. Brandt and A. Trampert and K. H. Ploog }, title = { Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells }, journal = { Journal of Applied Physics }, volume = { 104 }, year = { 2008 }, pages = { 113502 } }

TY - JOUR AU - F. Ishikawa AU - A. Guzman AU - O. Brandt AU - A. Trampert AU - K. H. Ploog TI - Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 104 SP - 113502 PY - 2008/01/01

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

@article{ author = { D. G. Zhao and D. S. Jiang and J. J. Zhu and Z. S. Liu and S. M. Zhang and H. Yang and U. Jahn and K. H. Ploog }, title = { Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition }, journal = { Journal of Crystal Growth }, volume = { 310 }, year = { 2008 }, pages = { 5266 } }

TY - JOUR AU - D. G. Zhao AU - D. S. Jiang AU - J. J. Zhu AU - Z. S. Liu AU - S. M. Zhang AU - H. Yang AU - U. Jahn AU - K. H. Ploog TI - Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 310 SP - 5266 PY - 2008/01/01

Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes

@article{ author = { V. Hoffmann and A. Knauer and F. Brunner and C. Netzel and U. Zeimer and S. Einfeldt and M. Weyers and G. Tränkle and J.M. Karaliunas and K. Kazlauskas and S. Jursenas and U. Jahn and J.R. van Look and M. Kneissl }, title = { Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes }, journal = { Journal of Crystal Growth }, volume = { 310 }, year = { 2008 }, pages = { 4525 } }

TY - JOUR AU - V. Hoffmann AU - A. Knauer AU - F. Brunner AU - C. Netzel AU - U. Zeimer AU - S. Einfeldt AU - M. Weyers AU - G. Tränkle AU - J.M. Karaliunas AU - K. Kazlauskas AU - S. Jursenas AU - U. Jahn AU - J.R. van Look AU - M. Kneissl TI - Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 310 SP - 4525 PY - 2008/01/01

Diffuse x-ray scattering from inclusions in ferromagnetic Ge_{1&#8722: x}Mn_x layers

@article{ author = { V. Holý and R. T. Lechner and S. Ahlers and L. Horák and T. H. Metzger and A. Navarro-Quezada and A. Trampert and D. Bougeard and G. Bauer }, title = { Diffuse x-ray scattering from inclusions in ferromagnetic Ge_{1&amp;#8722: x}Mn_x layers }, journal = { Physical Review B: Solid State }, volume = { 78 }, year = { 2008 }, pages = { 144401 } }

TY - JOUR AU - V. Holý AU - R. T. Lechner AU - S. Ahlers AU - L. Horák AU - T. H. Metzger AU - A. Navarro-Quezada AU - A. Trampert AU - D. Bougeard AU - G. Bauer TI - Diffuse x-ray scattering from inclusions in ferromagnetic Ge_{1&amp;#8722: x}Mn_x layers JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 78 SP - 144401 PY - 2008/01/01