Field-induced spin excitations in Rashba-Dresselhaus two-dimensional electron systems probed by surface acoustic waves

@article{ author = { P. Kleinert and V. V. Bryksin }, title = { Field-induced spin excitations in Rashba-Dresselhaus two-dimensional electron systems probed by surface acoustic waves }, journal = { International Journal of Modern Physics B }, volume = { 23 }, year = { 2009 }, pages = { 3515 } }

TY - JOUR AU - P. Kleinert AU - V. V. Bryksin TI - Field-induced spin excitations in Rashba-Dresselhaus two-dimensional electron systems probed by surface acoustic waves JF - International Journal of Modern Physics B JA - Int. J. Mod. Phys. B J1 - IJMPB VL - 23 SP - 3515 PY - 2009/01/01

GaSb(001) surface reconstructions measured at the growth front by surface x-ray diffraction

@article{ author = { B. P. Tinkham and O. Romanyuk and W. Braun and K. Ploog and F. Grosse and M. Takahasi and T. Kaizu and J. Mizuki }, title = { GaSb(001) surface reconstructions measured at the growth front by surface x-ray diffraction }, journal = { Journal of Electronic Materials }, volume = { 37 }, year = { 2009 }, pages = { 1793 } }

TY - JOUR AU - B. P. Tinkham AU - O. Romanyuk AU - W. Braun AU - K. Ploog AU - F. Grosse AU - M. Takahasi AU - T. Kaizu AU - J. Mizuki TI - GaSb(001) surface reconstructions measured at the growth front by surface x-ray diffraction JF - Journal of Electronic Materials JA - J. Electron. Mater. J1 - JEM VL - 37 SP - 1793 PY - 2009/01/01

Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective

@article{ author = { J. Bhattacharyya and S. Ghosh and H.T. Grahn }, title = { Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective }, journal = { Physica Status Solidi B }, volume = { 246 }, year = { 2009 }, pages = { 1184 } }

TY - JOUR AU - J. Bhattacharyya AU - S. Ghosh AU - H.T. Grahn TI - Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 246 SP - 1184 PY - 2009/01/01

Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence

@article{ author = { K. Fujiwara and U. Jahn and E. Luna and H.T. Grahn }, title = { Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 201 } }

TY - JOUR AU - K. Fujiwara AU - U. Jahn AU - E. Luna AU - H.T. Grahn TI - Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross-sectional cathodoluminescence JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 201 PY - 2009/01/01

Structure dependence of epitaxial Pr₂O₃/Si(001) on oxygen pressure during growth

@article{ author = { T. Watahiki and W. Braun and H. Riechert }, title = { Structure dependence of epitaxial Pr₂O₃/Si(001) on oxygen pressure during growth }, journal = { Journal of Vacuum Science and Technology B }, volume = { 27 }, year = { 2009 }, pages = { 262 } }

TY - JOUR AU - T. Watahiki AU - W. Braun AU - H. Riechert TI - Structure dependence of epitaxial Pr₂O₃/Si(001) on oxygen pressure during growth JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 27 SP - 262 PY - 2009/01/01

Structure analysis of epitaxial Gd₂O₃/Si(001) for high-gate dielectric applications

@article{ author = { T. Watahiki and B. Jenichen and R. Shayduk and B. P. Tinkham and W. Braun and H. Riechert }, title = { Structure analysis of epitaxial Gd₂O₃/Si(001) for high-gate dielectric applications }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 2179 } }

TY - JOUR AU - T. Watahiki AU - B. Jenichen AU - R. Shayduk AU - B. P. Tinkham AU - W. Braun AU - H. Riechert TI - Structure analysis of epitaxial Gd₂O₃/Si(001) for high-gate dielectric applications JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 2179 PY - 2009/01/01

Electric-field induced long-lived spin excitations in two-dimensional spin-orbit coupled systems

@article{ author = { P. Kleinert and V. V. Bryksin }, title = { Electric-field induced long-lived spin excitations in two-dimensional spin-orbit coupled systems }, journal = { Physical Review B: Solid State }, volume = { 79 }, year = { 2009 }, pages = { 045317 } }

TY - JOUR AU - P. Kleinert AU - V. V. Bryksin TI - Electric-field induced long-lived spin excitations in two-dimensional spin-orbit coupled systems JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 79 SP - 045317 PY - 2009/01/01

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates

@article{ author = { J. Grandal and M. A. Sánchez-García and E. Calleja and E. Gallardo and J. M. Calleja and E. Luna and A. Trampert and U. Jahn }, title = { InN nanocolumns grown by plasma-assisted molecular beam epitaxy on <em>A</em>-plane GaN templates }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 221908 } }

TY - JOUR AU - J. Grandal AU - M. A. Sánchez-García AU - E. Calleja AU - E. Gallardo AU - J. M. Calleja AU - E. Luna AU - A. Trampert AU - U. Jahn TI - InN nanocolumns grown by plasma-assisted molecular beam epitaxy on <em>A</em>-plane GaN templates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 221908 PY - 2009/01/01

Surface-acoustic-wave-induced AC-DC conversion in high-T_c superconducting films

@article{ author = { C. Hucho and F. Jachmann }, title = { Surface-acoustic-wave-induced AC-DC conversion in high-T_c superconducting films }, journal = { Materials Science and Engineering A }, volume = { 521--522 }, year = { 2009 }, pages = { 307 } }

TY - JOUR AU - C. Hucho AU - F. Jachmann TI - Surface-acoustic-wave-induced AC-DC conversion in high-T_c superconducting films JF - Materials Science and Engineering A JA - Mater. Sci. Eng. A J1 - MSEA VL - 521--522 SP - 307 PY - 2009/01/01

Heteroepitaxial growth of lattice matched films on GaAs(001)

@article{ author = { B. Jenichen and V. M. Kaganer and R. Shayduk and W. Braun and A. Trampert }, title = { Heteroepitaxial growth of lattice matched films on GaAs(001) }, journal = { Physica Status Solidi A }, volume = { 206 }, year = { 2009 }, pages = { 1740 } }

TY - JOUR AU - B. Jenichen AU - V. M. Kaganer AU - R. Shayduk AU - W. Braun AU - A. Trampert TI - Heteroepitaxial growth of lattice matched films on GaAs(001) JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 206 SP - 1740 PY - 2009/01/01

Kinetic optimum of Volmer-Weber growth

@article{ author = { V. M. Kaganer and B. Jenichen and R. Shayduk and W. Braun and H. Riechert }, title = { Kinetic optimum of Volmer-Weber growth }, journal = { Physical Review Letters }, volume = { 102 }, year = { 2009 }, pages = { 016103 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - R. Shayduk AU - W. Braun AU - H. Riechert TI - Kinetic optimum of Volmer-Weber growth JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 102 SP - 016103 PY - 2009/01/01

Interfacial roughness of Fe₃Si/GaAs(001) films studied by x-ray crystal truncation rods

@article{ author = { V. M. Kaganer and B. Jenichen and R. Shayduk and W. Braun }, title = { Interfacial roughness of Fe₃Si/GaAs(001) films studied by x-ray crystal truncation rods }, journal = { Physica Status Solidi A }, volume = { 206 }, year = { 2009 }, pages = { 1744 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - R. Shayduk AU - W. Braun TI - Interfacial roughness of Fe₃Si/GaAs(001) films studied by x-ray crystal truncation rods JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 206 SP - 1744 PY - 2009/01/01

Strained quantum wells in scrolled structures studied by μ-photoluminescence

@article{ author = { R. Hey and M. Ramsteiner and P. V. Santos and K.-J. Friedland }, title = { Strained quantum wells in scrolled structures studied by <span class="math"><em>μ</em></span>-photoluminescence }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 1680 } }

TY - JOUR AU - R. Hey AU - M. Ramsteiner AU - P. V. Santos AU - K.-J. Friedland TI - Strained quantum wells in scrolled structures studied by <span class="math"><em>μ</em></span>-photoluminescence JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 1680 PY - 2009/01/01

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

@article{ author = { E. Luna and F. Ishikawa and B. Satpati and J. B. Rodriguez and E. Tournie and A. Trampert }, title = { Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 1739 } }

TY - JOUR AU - E. Luna AU - F. Ishikawa AU - B. Satpati AU - J. B. Rodriguez AU - E. Tournie AU - A. Trampert TI - Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 1739 PY - 2009/01/01

Epitaxy of Ge-Sb-Te phase-change memory alloys

@article{ author = { W. Braun and R. Shayduk and T. Flissikowski and M. Ramsteiner and H.T. Grahn and H. Riechert and P. Fons and A. Kolobov }, title = { Epitaxy of Ge-Sb-Te phase-change memory alloys }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 041902 } }

TY - JOUR AU - W. Braun AU - R. Shayduk AU - T. Flissikowski AU - M. Ramsteiner AU - H.T. Grahn AU - H. Riechert AU - P. Fons AU - A. Kolobov TI - Epitaxy of Ge-Sb-Te phase-change memory alloys JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 041902 PY - 2009/01/01

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

@article{ author = { P. Corfdir and P. Lefebvre and J. Ristic and P. Valvin and E. Calleja and A. Trampert and J.-D. Ganiere and B. Deveaud-Pledran }, title = { Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates }, journal = { Journal of Applied Physics }, volume = { 105 }, year = { 2009 }, pages = { 013113 } }

TY - JOUR AU - P. Corfdir AU - P. Lefebvre AU - J. Ristic AU - P. Valvin AU - E. Calleja AU - A. Trampert AU - J.-D. Ganiere AU - B. Deveaud-Pledran TI - Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 105 SP - 013113 PY - 2009/01/01

Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance

@article{ author = { R. Kudrawiec and G. Scek and J. Misiewicz and F. Ishikawa and A. Trampert and K. H. Ploog }, title = { Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 011907 } }

TY - JOUR AU - R. Kudrawiec AU - G. Scek AU - J. Misiewicz AU - F. Ishikawa AU - A. Trampert AU - K. H. Ploog TI - Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 011907 PY - 2009/01/01

H- and D-related mid-infrared absorption bands in Ga_1-yIn_yAs_1-xN_x epitaxial layers

@article{ author = { H. C. Alt and P. Messerer and K. Köhler and H. Riechert }, title = { H- and D-related mid-infrared absorption bands in Ga_1-yIn_yAs_1-xN_x epitaxial layers }, journal = { Physica Status Solidi B }, volume = { 246 }, year = { 2009 }, pages = { 200 } }

TY - JOUR AU - H. C. Alt AU - P. Messerer AU - K. Köhler AU - H. Riechert TI - H- and D-related mid-infrared absorption bands in Ga_1-yIn_yAs_1-xN_x epitaxial layers JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 246 SP - 200 PY - 2009/01/01

The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells

@article{ author = { A. Guzman and E. Luna and F. Ishikawa and A. Trampert }, title = { The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 1728 } }

TY - JOUR AU - A. Guzman AU - E. Luna AU - F. Ishikawa AU - A. Trampert TI - The role of Sb and N ions on the morphology and localization of (Ga,In)(N,As) quantum wells JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 1728 PY - 2009/01/01

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

@article{ author = { V. F. Sapega and D. Kolovos-Vellianitis and A. M. Petrov and A. Trampert and K. H. Ploog }, title = { Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures }, journal = { Journal of Magnetism and Magnetic Materials }, volume = { 321 }, year = { 2009 }, pages = { 720 } }

TY - JOUR AU - V. F. Sapega AU - D. Kolovos-Vellianitis AU - A. M. Petrov AU - A. Trampert AU - K. H. Ploog TI - Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures JF - Journal of Magnetism and Magnetic Materials JA - J. Magn. Magn. Mater. J1 - JMMM VL - 321 SP - 720 PY - 2009/01/01

Excitation of spin waves on a cylindrical semiconductor heterostructure with Rashba spin-orbit interaction

@article{ author = { P. Kleinert }, title = { Excitation of spin waves on a cylindrical semiconductor heterostructure with Rashba spin-orbit interaction }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 41 }, year = { 2009 }, pages = { 660 } }

TY - JOUR AU - P. Kleinert TI - Excitation of spin waves on a cylindrical semiconductor heterostructure with Rashba spin-orbit interaction JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 41 SP - 660 PY - 2009/01/01

Epitaxial films for Ge-Sb-Te phase change memory

@article{ author = { R. Shayduk and W. Braun }, title = { Epitaxial films for Ge-Sb-Te phase change memory }, journal = { Journal of Crystal Growth }, volume = { 311 }, year = { 2009 }, pages = { 2215 } }

TY - JOUR AU - R. Shayduk AU - W. Braun TI - Epitaxial films for Ge-Sb-Te phase change memory JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 311 SP - 2215 PY - 2009/01/01

Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties

@article{ author = { D. Abou-Ras and C. T. Koch and V. Küstner and P. A. van Aken and U. Jahn and M. A. Contreras and R. Caballero and C. A. Kaufmann and R. Scheer and T. Unold and H.-W. Schock }, title = { Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties }, journal = { Thin Solid Films }, volume = { 517 }, year = { 2009 }, pages = { 2545 } }

TY - JOUR AU - D. Abou-Ras AU - C. T. Koch AU - V. Küstner AU - P. A. van Aken AU - U. Jahn AU - M. A. Contreras AU - R. Caballero AU - C. A. Kaufmann AU - R. Scheer AU - T. Unold AU - H.-W. Schock TI - Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 517 SP - 2545 PY - 2009/01/01

Two-time quantum transport and quantum diffusion

@article{ author = { P. Kleinert }, title = { Two-time quantum transport and quantum diffusion }, journal = { Physical Review E: Statistical, Nonlinear, and Soft Matter Physics }, volume = { 79 }, year = { 2009 }, pages = { 051107 } }

TY - JOUR AU - P. Kleinert TI - Two-time quantum transport and quantum diffusion JF - Physical Review E: Statistical, Nonlinear, and Soft Matter Physics JA - Phys. Rev. E J1 - PRE VL - 79 SP - 051107 PY - 2009/01/01

Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

@article{ author = { Z. Gavcevic and S. Fernández-Garrido and E. Calleja and E. Luna and A. Trampert }, title = { Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { S643 } }

TY - JOUR AU - Z. Gavcevic AU - S. Fernández-Garrido AU - E. Calleja AU - E. Luna AU - A. Trampert TI - Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - S643 PY - 2009/01/01

Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder

@article{ author = { K.-J. Friedland and A. Siddiki and R. Hey and H. Kostial and A. Riedel and D. K. Maude }, title = { Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder }, journal = { Physical Review B: Solid State }, volume = { 79 }, year = { 2009 }, pages = { 125320 } }

TY - JOUR AU - K.-J. Friedland AU - A. Siddiki AU - R. Hey AU - H. Kostial AU - A. Riedel AU - D. K. Maude TI - Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 79 SP - 125320 PY - 2009/01/01

Photoluminescence dynamics in GaAs/AlAs quantum wells modulated by one-dimensional standing surface acoustic waves

@article{ author = { T. Sogawa and H. Sanada and H. Gotoh and H. Yamaguchi and S. Miyashita and P. V. Santos }, title = { Photoluminescence dynamics in GaAs/AlAs quantum wells modulated by one-dimensional standing surface acoustic waves }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 131912 } }

TY - JOUR AU - T. Sogawa AU - H. Sanada AU - H. Gotoh AU - H. Yamaguchi AU - S. Miyashita AU - P. V. Santos TI - Photoluminescence dynamics in GaAs/AlAs quantum wells modulated by one-dimensional standing surface acoustic waves JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 131912 PY - 2009/01/01

Composition dependent properties of Fe₃Si films grown on GaAs(113)A substrates

@article{ author = { P. K. Muduli and K.-J. Friedland and J. Herfort and H.-P. Schönherr and K. H. Ploog }, title = { Composition dependent properties of Fe₃Si films grown on GaAs(113)A substrates }, journal = { Journal of Applied Physics }, volume = { 105 }, year = { 2009 }, pages = { 07B104 } }

TY - JOUR AU - P. K. Muduli AU - K.-J. Friedland AU - J. Herfort AU - H.-P. Schönherr AU - K. H. Ploog TI - Composition dependent properties of Fe₃Si films grown on GaAs(113)A substrates JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 105 SP - 07B104 PY - 2009/01/01

Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy: A GaAs/(AlGa)As-(GaIn)As/GaAs comparison

@article{ author = { T. Grunwald and T. Jung and D. Köhler and S. W. Koch and G. Khitrova and H. M. Gibbs and R. Hey and S. Chatterjee }, title = { Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy: A GaAs/(AlGa)As-(GaIn)As/GaAs comparison }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 500 } }

TY - JOUR AU - T. Grunwald AU - T. Jung AU - D. Köhler AU - S. W. Koch AU - G. Khitrova AU - H. M. Gibbs AU - R. Hey AU - S. Chatterjee TI - Measurement of intraexcitonic transition signatures via THz time-domain spectroscopy: A GaAs/(AlGa)As-(GaIn)As/GaAs comparison JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 500 PY - 2009/01/01

Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs

@article{ author = { S. Fündling and S.-F. Li and Ü. Sökmen and S. Merzsch and P. Hinze and T. Weimann and U. Jahn and A. Trampert and H. Riechert and E. Peiner and H.-H. Wehmann and A. Waag }, title = { Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs }, journal = { Physica Status Solidi A }, volume = { 206 }, year = { 2009 }, pages = { 1194 } }

TY - JOUR AU - S. Fündling AU - S.-F. Li AU - Ü. Sökmen AU - S. Merzsch AU - P. Hinze AU - T. Weimann AU - U. Jahn AU - A. Trampert AU - H. Riechert AU - E. Peiner AU - H.-H. Wehmann AU - A. Waag TI - Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 206 SP - 1194 PY - 2009/01/01

Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties

@article{ author = { L. Tran and J. Herfort and O. Bierwagen and F. Hatami and W. T. Masselink }, title = { Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 1492 } }

TY - JOUR AU - L. Tran AU - J. Herfort AU - O. Bierwagen AU - F. Hatami AU - W. T. Masselink TI - Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 1492 PY - 2009/01/01

Crystal structure and strain state of molecular beam epitaxial grown Gd₂O₃ on Si(111) substrates: A diffraction study

@article{ author = { J. X. Wang and A. Laha and A. Fissel and D. Schwendt and R. Dargis and T. Watahiki and R. Shayduk and W. Braun and T. M. Liu and H. J. Osten }, title = { Crystal structure and strain state of molecular beam epitaxial grown Gd₂O₃ on Si(111) substrates: A diffraction study }, journal = { Semiconductor Science and Technology }, volume = { 24 }, year = { 2009 }, pages = { 045021 } }

TY - JOUR AU - J. X. Wang AU - A. Laha AU - A. Fissel AU - D. Schwendt AU - R. Dargis AU - T. Watahiki AU - R. Shayduk AU - W. Braun AU - T. M. Liu AU - H. J. Osten TI - Crystal structure and strain state of molecular beam epitaxial grown Gd₂O₃ on Si(111) substrates: A diffraction study JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 24 SP - 045021 PY - 2009/01/01

Nonpolar-oriented GaN films for polarization-sensitive and narrow-band photo-detectors

@article{ author = { H.T. Grahn }, title = { Nonpolar-oriented GaN films for polarization-sensitive and narrow-band photo-detectors }, journal = { Materials Research Society Bulletin }, volume = { 34 }, year = { 2009 }, pages = { 341 } }

TY - JOUR AU - H.T. Grahn TI - Nonpolar-oriented GaN films for polarization-sensitive and narrow-band photo-detectors JF - Materials Research Society Bulletin JA - MRS Bulletin J1 - VL - 34 SP - 341 PY - 2009/01/01

Atom-by-atom quantum state control in adatom chains on a semiconductor

@article{ author = { S. Fölsch and J. Yang and C. Nacci and K. Kanisawa }, title = { Atom-by-atom quantum state control in adatom chains on a semiconductor }, journal = { Physical Review Letters }, volume = { 103 }, year = { 2009 }, pages = { 096104 } }

TY - JOUR AU - S. Fölsch AU - J. Yang AU - C. Nacci AU - K. Kanisawa TI - Atom-by-atom quantum state control in adatom chains on a semiconductor JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 103 SP - 096104 PY - 2009/01/01

Anomalous ac electric field effect in bilayer graphene

@article{ author = { P. Kleinert }, title = { Anomalous ac electric field effect in bilayer graphene }, journal = { Physica B: Condensed Matter }, volume = { 404 }, year = { 2009 }, pages = { 4015 } }

TY - JOUR AU - P. Kleinert TI - Anomalous ac electric field effect in bilayer graphene JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 404 SP - 4015 PY - 2009/01/01

Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy

@article{ author = { Y. Takagaki and B. Jenichen and C. Herrmann and J. Herfort }, title = { Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 014116 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - C. Herrmann AU - J. Herfort TI - Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 014116 PY - 2009/01/01

Low-voltage terahertz quantum-cascade lasers based on LO-phonon-assisted interminiband transitions

@article{ author = { M. Wienold and L. Schrottke and M. Giehler and R. Hey and W. Anders and H.T. Grahn }, title = { Low-voltage terahertz quantum-cascade lasers based on LO-phonon-assisted interminiband transitions }, journal = { Electronics Letters }, volume = { 45 }, year = { 2009 }, pages = { 1030 } }

TY - JOUR AU - M. Wienold AU - L. Schrottke AU - M. Giehler AU - R. Hey AU - W. Anders AU - H.T. Grahn TI - Low-voltage terahertz quantum-cascade lasers based on LO-phonon-assisted interminiband transitions JF - Electronics Letters JA - Electron. Lett. J1 - ElLe VL - 45 SP - 1030 PY - 2009/01/01

X-ray diffraction of epitaxial films with arbitrarily correlated dislocations: Monte Carlo calculation and experiment

@article{ author = { V. M. Kaganer and O. Brandt and H. Riechert and K. K. Sabelfeld }, title = { X-ray diffraction of epitaxial films with arbitrarily correlated dislocations: Monte Carlo calculation and experiment }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 033306 } }

TY - JOUR AU - V. M. Kaganer AU - O. Brandt AU - H. Riechert AU - K. K. Sabelfeld TI - X-ray diffraction of epitaxial films with arbitrarily correlated dislocations: Monte Carlo calculation and experiment JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 033306 PY - 2009/01/01

Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices

@article{ author = { M. Hanke and M. Schmidbauer and Zh. M. Wang and Yu. I. Mazur and Sh. Seydmohamadi and G. J. Salamo and T. D. Mishima and M. B. Johnson }, title = { Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 203105 } }

TY - JOUR AU - M. Hanke AU - M. Schmidbauer AU - Zh. M. Wang AU - Yu. I. Mazur AU - Sh. Seydmohamadi AU - G. J. Salamo AU - T. D. Mishima AU - M. B. Johnson TI - Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 203105 PY - 2009/01/01

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

@article{ author = { R. G. Mani and W. B. Johnson and V. Umansky and V. Narayanamurti and K. Ploog }, title = { Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect }, journal = { Physical Review B: Solid State }, volume = { 79 }, year = { 2009 }, pages = { 205320 } }

TY - JOUR AU - R. G. Mani AU - W. B. Johnson AU - V. Umansky AU - V. Narayanamurti AU - K. Ploog TI - Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 79 SP - 205320 PY - 2009/01/01

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunched GaAs(331)B

@article{ author = { Y. Takagaki and C. Herrmann and B. Jenichen and J. Herfort }, title = { Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunched GaAs(331)B }, journal = { Physical Review B: Solid State }, volume = { 79 }, year = { 2009 }, pages = { 235320 } }

TY - JOUR AU - Y. Takagaki AU - C. Herrmann AU - B. Jenichen AU - J. Herfort TI - Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunched GaAs(331)B JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 79 SP - 235320 PY - 2009/01/01

Spin remagnetization excitations in semiconductors with Rashba and Dresselhaus spin-orbit coupling

@article{ author = { P. Kleinert }, title = { Spin remagnetization excitations in semiconductors with Rashba and Dresselhaus spin-orbit coupling }, journal = { Solid State Communications }, volume = { 149 }, year = { 2009 }, pages = { 2024 } }

TY - JOUR AU - P. Kleinert TI - Spin remagnetization excitations in semiconductors with Rashba and Dresselhaus spin-orbit coupling JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 149 SP - 2024 PY - 2009/01/01

Stoichiometry and Bravais lattice diversity: An ab initio study of the GaSb(001) surface

@article{ author = { O. Romanyuk and F. Grosse and W. Braun }, title = { Stoichiometry and Bravais lattice diversity: An <em>ab initio</em> study of the GaSb(001) surface }, journal = { Physical Review B: Solid State }, volume = { 79 }, year = { 2009 }, pages = { 235330 } }

TY - JOUR AU - O. Romanyuk AU - F. Grosse AU - W. Braun TI - Stoichiometry and Bravais lattice diversity: An <em>ab initio</em> study of the GaSb(001) surface JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 79 SP - 235330 PY - 2009/01/01

Nonlinear THz response of n-type GaAs

@article{ author = { M. Woerner and W. Kuehn and P. Gaal and K. Reimann and Th. Elsaesser and R. Hey }, title = { Nonlinear THz response of <em>n</em>-type GaAs }, journal = { Proceedings of SPIE }, volume = { 7214 }, year = { 2009 }, pages = { 72140W } }

TY - JOUR AU - M. Woerner AU - W. Kuehn AU - P. Gaal AU - K. Reimann AU - Th. Elsaesser AU - R. Hey TI - Nonlinear THz response of <em>n</em>-type GaAs JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 7214 SP - 72140W PY - 2009/01/01

Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 Cyclooctadiene on Si(001)

@article{ author = { C. Nacci and S. Fölsch and K. Zenichowski and J. Dokic and T. Klamroth and P. Saalfrank }, title = { Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 Cyclooctadiene on Si(001) }, journal = { Nano Letters }, volume = { 9 }, year = { 2009 }, pages = { 2996 } }

TY - JOUR AU - C. Nacci AU - S. Fölsch AU - K. Zenichowski AU - J. Dokic AU - T. Klamroth AU - P. Saalfrank TI - Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 Cyclooctadiene on Si(001) JF - Nano Letters JA - Nano Lett. J1 - VL - 9 SP - 2996 PY - 2009/01/01

On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules

@article{ author = { M. Hanke and M. Dubslaff and M. Schmidbauer and Zh. M. Wang and Yu. I. Mazur and P. M. Lytvyn and J. H. Lee and G. J. Salamo }, title = { On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 023103 } }

TY - JOUR AU - M. Hanke AU - M. Dubslaff AU - M. Schmidbauer AU - Zh. M. Wang AU - Yu. I. Mazur AU - P. M. Lytvyn AU - J. H. Lee AU - G. J. Salamo TI - On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 023103 PY - 2009/01/01

Ab initio study of GaSb(001)-c(2 10) and (2 10) reconstructions

@article{ author = { O. Romanyuk and W. Braun and F. Grosse }, title = { <em>Ab initio</em> study of GaSb(001)-c(2 10) and (2 10) reconstructions }, journal = { e-Journal of Surface Science and Nanotechnology }, volume = { 7 }, year = { 2009 }, pages = { 429 } }

TY - JOUR AU - O. Romanyuk AU - W. Braun AU - F. Grosse TI - <em>Ab initio</em> study of GaSb(001)-c(2 10) and (2 10) reconstructions JF - e-Journal of Surface Science and Nanotechnology JA - e-J. Surf. Sci. Nanotech. J1 - VL - 7 SP - 429 PY - 2009/01/01

Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy

@article{ author = { M. Hilse and Y. Takagaki and J. Herfort and M. Ramsteiner and C. Herrmann and S. Breuer and L. Geelhaar and H. Riechert }, title = { Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 133126 } }

TY - JOUR AU - M. Hilse AU - Y. Takagaki AU - J. Herfort AU - M. Ramsteiner AU - C. Herrmann AU - S. Breuer AU - L. Geelhaar AU - H. Riechert TI - Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 133126 PY - 2009/01/01

Strong dependence of the magnetic anisotropy on the growth temperature of Fe_3+xSi_1-x (x = 0. 34) films on GaAs(113)A substrates

@article{ author = { P. K. Muduli and J. Herfort and H.-P. Schönherr and K. H. Ploog }, title = { Strong dependence of the magnetic anisotropy on the growth temperature of Fe_3+xSi_1-x (<span class="math"><em>x</em> = 0. 34</span>) films on GaAs(113)A substrates }, journal = { Journal of Magnetism and Magnetic Materials }, volume = { 321 }, year = { 2009 }, pages = { 3488 } }

TY - JOUR AU - P. K. Muduli AU - J. Herfort AU - H.-P. Schönherr AU - K. H. Ploog TI - Strong dependence of the magnetic anisotropy on the growth temperature of Fe_3+xSi_1-x (<span class="math"><em>x</em> = 0. 34</span>) films on GaAs(113)A substrates JF - Journal of Magnetism and Magnetic Materials JA - J. Magn. Magn. Mater. J1 - JMMM VL - 321 SP - 3488 PY - 2009/01/01

Thermal stability of epitaxial Fe films on GaN(0001)

@article{ author = { C. X. Gao and O. Brandt and H.-P. Schönherr and U. Jahn and J. Herfort and B. Jenichen }, title = { Thermal stability of epitaxial Fe films on GaN(0001) }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 111906 } }

TY - JOUR AU - C. X. Gao AU - O. Brandt AU - H.-P. Schönherr AU - U. Jahn AU - J. Herfort AU - B. Jenichen TI - Thermal stability of epitaxial Fe films on GaN(0001) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 111906 PY - 2009/01/01

X-ray diffraction peaks from partially ordered misfit dislocations

@article{ author = { V. M. Kaganer and K. K. Sabelfeld }, title = { X-ray diffraction peaks from partially ordered misfit dislocations }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 184105 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld TI - X-ray diffraction peaks from partially ordered misfit dislocations JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 184105 PY - 2009/01/01

Self-assembled Mn₅Ge₃ nanomagnets close to the surface and deep inside a Ge_1-xMn_x epilayer

@article{ author = { R. T. Lechner and V. Holy and S. Ahlers and D. Bougeard and J. Stangl and A. Trampert and A. Navarro-Quezada and G. Bauer }, title = { Self-assembled Mn₅Ge₃ nanomagnets close to the surface and deep inside a Ge_1-xMn_x epilayer }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 023102 } }

TY - JOUR AU - R. T. Lechner AU - V. Holy AU - S. Ahlers AU - D. Bougeard AU - J. Stangl AU - A. Trampert AU - A. Navarro-Quezada AU - G. Bauer TI - Self-assembled Mn₅Ge₃ nanomagnets close to the surface and deep inside a Ge_1-xMn_x epilayer JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 023102 PY - 2009/01/01

Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films

@article{ author = { D. Martin and M. Grube and W. M. Weber and J. Rüstig and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 142906 } }

TY - JOUR AU - D. Martin AU - M. Grube AU - W. M. Weber AU - J. Rüstig AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 142906 PY - 2009/01/01

Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials

@article{ author = { X. J. Wang and Y. Puttisong and C. W. Tu and A. J. Ptak and V. K. Kalevich and A. Yu. Egorov and L. Geelhaar and H. Riechert and W. M. Chen and I. A. Buyanova }, title = { Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 241904 } }

TY - JOUR AU - X. J. Wang AU - Y. Puttisong AU - C. W. Tu AU - A. J. Ptak AU - V. K. Kalevich AU - A. Yu. Egorov AU - L. Geelhaar AU - H. Riechert AU - W. M. Chen AU - I. A. Buyanova TI - Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 241904 PY - 2009/01/01

Electrical detection of ambipolar acoustic carrier transport by surface acoustic waves

@article{ author = { S. J. Jiao and P. D. Batista and K. Biermann and R. Hey and P. V. Santos }, title = { Electrical detection of ambipolar acoustic carrier transport by surface acoustic waves }, journal = { Journal of Applied Physics }, volume = { 106 }, year = { 2009 }, pages = { 053708 } }

TY - JOUR AU - S. J. Jiao AU - P. D. Batista AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Electrical detection of ambipolar acoustic carrier transport by surface acoustic waves JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 106 SP - 053708 PY - 2009/01/01

Photon anti-bunching in acoustically pumped quantum dots

@article{ author = { O. D. D. Couto Jr. and S. Lazic and F. Iikawa and J. A. H. Stotz and U. Jahn and R. Hey and P. V. Santos }, title = { Photon anti-bunching in acoustically pumped quantum dots }, journal = { Nature Photonics }, volume = { 3 }, year = { 2009 }, pages = { 645 } }

TY - JOUR AU - O. D. D. Couto Jr. AU - S. Lazic AU - F. Iikawa AU - J. A. H. Stotz AU - U. Jahn AU - R. Hey AU - P. V. Santos TI - Photon anti-bunching in acoustically pumped quantum dots JF - Nature Photonics JA - Nature Photon. J1 - VL - 3 SP - 645 PY - 2009/01/01

Effects of nanowire coalescence on their structural and optical properties on a local scale

@article{ author = { V. Consonni and M. Knelangen and U. Jahn and A. Trampert and L. Geelhaar and H. Riechert }, title = { Effects of nanowire coalescence on their structural and optical properties on a local scale }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 241910 } }

TY - JOUR AU - V. Consonni AU - M. Knelangen AU - U. Jahn AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Effects of nanowire coalescence on their structural and optical properties on a local scale JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 241910 PY - 2009/01/01

Spatial and temporal modulation of exciton photoluminescence properties in GaAs/AlAs dynamic quantum dots formed by surface acoustic waves

@article{ author = { T. Sogawa and H. Sanada and H. Gotoh and H. Yamaguchi and S. Miyashita and P. V. Santos }, title = { Spatial and temporal modulation of exciton photoluminescence properties in GaAs/AlAs dynamic quantum dots formed by surface acoustic waves }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 075304 } }

TY - JOUR AU - T. Sogawa AU - H. Sanada AU - H. Gotoh AU - H. Yamaguchi AU - S. Miyashita AU - P. V. Santos TI - Spatial and temporal modulation of exciton photoluminescence properties in GaAs/AlAs dynamic quantum dots formed by surface acoustic waves JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 075304 PY - 2009/01/01

Measurement of the infrared transmission through a single doped GaAs quantum well in an external magnetic field: Evidence for polaron effects

@article{ author = { C. Faugeras and M. Orlita and S. Deutchlander and G. Martinez and P. Y. Yu and A. Riedel and R. Hey and K.-J. Friedland }, title = { Measurement of the infrared transmission through a single doped GaAs quantum well in an external magnetic field: Evidence for polaron effects }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 073303 } }

TY - JOUR AU - C. Faugeras AU - M. Orlita AU - S. Deutchlander AU - G. Martinez AU - P. Y. Yu AU - A. Riedel AU - R. Hey AU - K.-J. Friedland TI - Measurement of the infrared transmission through a single doped GaAs quantum well in an external magnetic field: Evidence for polaron effects JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 073303 PY - 2009/01/01

Temperature dependence of the optical transitions in Ga_0.64In_0.36N_0.046As_0.954 multiquantum wells of various widths studied by photoreflectance

@article{ author = { R. Kudrawiec and P. Poloczek and J. Misiewicz and F. Ishikawa and A. Trampert and K. H. Ploog }, title = { Temperature dependence of the optical transitions in Ga_0.64In_0.36N_0.046As_0.954 multiquantum wells of various widths studied by photoreflectance }, journal = { Journal of Applied Physics }, volume = { 106 }, year = { 2009 }, pages = { 033507 } }

TY - JOUR AU - R. Kudrawiec AU - P. Poloczek AU - J. Misiewicz AU - F. Ishikawa AU - A. Trampert AU - K. H. Ploog TI - Temperature dependence of the optical transitions in Ga_0.64In_0.36N_0.046As_0.954 multiquantum wells of various widths studied by photoreflectance JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 106 SP - 033507 PY - 2009/01/01

Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy

@article{ author = { V. F. Sapega and N. I. Sablina and I. E. Panaiotti and N. S. Averkiev and K. H. Ploog }, title = { Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 80 }, year = { 2009 }, pages = { 041202(R) } }

TY - JOUR AU - V. F. Sapega AU - N. I. Sablina AU - I. E. Panaiotti AU - N. S. Averkiev AU - K. H. Ploog TI - Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 80 SP - 041202(R) PY - 2009/01/01

Ge_1-xMn_x clusters: Central structural and magnetic building blocks of nanoscale wire-like self-assembly in a magnetic semiconductor

@article{ author = { D. Bougeard and N. Sircar and S. Ahlers and V. Lang and G. Abstreiter and A. Trampert and J. M. LeBeau and S. Stemmer and D. W. Saxey and A. Cerezo }, title = { Ge_1-xMn_x clusters: Central structural and magnetic building blocks of nanoscale wire-like self-assembly in a magnetic semiconductor }, journal = { Nano Letters }, volume = { 9 }, year = { 2009 }, pages = { 3743 } }

TY - JOUR AU - D. Bougeard AU - N. Sircar AU - S. Ahlers AU - V. Lang AU - G. Abstreiter AU - A. Trampert AU - J. M. LeBeau AU - S. Stemmer AU - D. W. Saxey AU - A. Cerezo TI - Ge_1-xMn_x clusters: Central structural and magnetic building blocks of nanoscale wire-like self-assembly in a magnetic semiconductor JF - Nano Letters JA - Nano Lett. J1 - VL - 9 SP - 3743 PY - 2009/01/01

Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications

@article{ author = { S. Fündling and U. Jahn and A. Trampert and H. Riechert and H.-H. Wehmann and A. Waag }, title = { Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications }, journal = { Microelectronics Journal }, volume = { 40 }, year = { 2009 }, pages = { 333 } }

TY - JOUR AU - S. Fündling AU - U. Jahn AU - A. Trampert AU - H. Riechert AU - H.-H. Wehmann AU - A. Waag TI - Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications JF - Microelectronics Journal JA - Microelectron. J. J1 - MiJo VL - 40 SP - 333 PY - 2009/01/01

Boron- and stoichiometry-related defect engineering during B₂O₃-free GaAs crystal growth

@article{ author = { F.-M. Kiessling and M. Albrecht and K. Irmscher and M. Roßberg and P. Rudolph and W. Ulrici and R. Fornari }, title = { Boron- and stoichiometry-related defect engineering during B₂O₃-free GaAs crystal growth }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 2778 } }

TY - JOUR AU - F.-M. Kiessling AU - M. Albrecht AU - K. Irmscher AU - M. Roßberg AU - P. Rudolph AU - W. Ulrici AU - R. Fornari TI - Boron- and stoichiometry-related defect engineering during B₂O₃-free GaAs crystal growth JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 2778 PY - 2009/01/01

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

@article{ author = { I. Shlimak and D. I. Golosov and A. Butenko and K.-J. Friedland and S. V. Kravchenko }, title = { Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field }, journal = { Annalen der Physik }, volume = { 18 }, year = { 2009 }, pages = { 913 } }

TY - JOUR AU - I. Shlimak AU - D. I. Golosov AU - A. Butenko AU - K.-J. Friedland AU - S. V. Kravchenko TI - Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field JF - Annalen der Physik JA - Ann. Phys. J1 - VL - 18 SP - 913 PY - 2009/01/01

Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001)

@article{ author = { W. Braun and R. Shayduk and T. Flissikowski and H.T. Grahn and H. Riechert and P. Fons and A. Kolobov }, title = { Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001) }, journal = { Materials and Physics for Nonvolatile Memories; edited by Y. Fujisaki, R. Waser, T. Li, and C. Bonafos, Mater. Res. Soc. Proc. Vol. 1160 (MRS, Pittsburgh, 2009) }, volume = { }, year = { 2009 }, pages = { H14-05 } }

TY - JOUR AU - W. Braun AU - R. Shayduk AU - T. Flissikowski AU - H.T. Grahn AU - H. Riechert AU - P. Fons AU - A. Kolobov TI - Epitaxial phase change materials: Growth and switching of Ge₂Sb₂Te₅ on GaSb(001) JF - Materials and Physics for Nonvolatile Memories; edited by Y. Fujisaki, R. Waser, T. Li, and C. Bonafos, Mater. Res. Soc. Proc. Vol. 1160 (MRS, Pittsburgh, 2009) JA - Proc. MRS 1160 J1 - VL - SP - H14-05 PY - 2009/01/01