Current path in light emitting diodes based on nanowire ensembles

@article{ author = { F. Limbach and C. Hauswald and J. Lähnemann and M. Wölz and O. Brandt and A. Trampert and M. Hanke and U. Jahn and R. Calarco and L. Geelhaar and H. Riechert }, title = { Current path in light emitting diodes based on nanowire ensembles }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 465301 } }

TY - JOUR AU - F. Limbach AU - C. Hauswald AU - J. Lähnemann AU - M. Wölz AU - O. Brandt AU - A. Trampert AU - M. Hanke AU - U. Jahn AU - R. Calarco AU - L. Geelhaar AU - H. Riechert TI - Current path in light emitting diodes based on nanowire ensembles JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 465301 PY - 2012/10/23

Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures

@article{ author = { M. Wölz and J. Lähnemann and O. Brandt and V. M. Kaganer and M. Ramsteiner and C. Pfüller and C. Hauswald and C. N. Huang and L. Geelhaar and H. Riechert }, title = { Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 455203 } }

TY - JOUR AU - M. Wölz AU - J. Lähnemann AU - O. Brandt AU - V. M. Kaganer AU - M. Ramsteiner AU - C. Pfüller AU - C. Hauswald AU - C. N. Huang AU - L. Geelhaar AU - H. Riechert TI - Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 455203 PY - 2012/10/19

Direct experimental determination of the spontaneous polarization of GaN

@article{ author = { J. Lähnemann and O. Brandt and U. Jahn and C. Pfüller and C. Roder and P. Dogan and F. Grosse and A. Belabbes and F. Bechstedt and A. Trampert and L. Geelhaar }, title = { Direct experimental determination of the spontaneous polarization of GaN }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 081302(R) } }

TY - JOUR AU - J. Lähnemann AU - O. Brandt AU - U. Jahn AU - C. Pfüller AU - C. Roder AU - P. Dogan AU - F. Grosse AU - A. Belabbes AU - F. Bechstedt AU - A. Trampert AU - L. Geelhaar TI - Direct experimental determination of the spontaneous polarization of GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 081302(R) PY - 2012/08/09

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

@article{ author = { U. Jahn and J. Lähnemann and C. Pfüller and O. Brandt and S. Breuer and B. Jenichen and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 045323 } }

TY - JOUR AU - U. Jahn AU - J. Lähnemann AU - C. Pfüller AU - O. Brandt AU - S. Breuer AU - B. Jenichen AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 045323 PY - 2012/01/30

Ferromagnetic Heusler alloy Co₂FeSi films on GaAs(110) grown by molecular beam epitaxy

@article{ author = { T. Hentschel and B. Jenichen and A. Trampert and J. Herfort }, title = { Ferromagnetic Heusler alloy Co₂FeSi films on GaAs(110) grown by molecular beam epitaxy }, journal = { Journal of Physics D: Applied Physics }, volume = { 45 }, year = { 2012 }, pages = { 055002 } }

TY - JOUR AU - T. Hentschel AU - B. Jenichen AU - A. Trampert AU - J. Herfort TI - Ferromagnetic Heusler alloy Co₂FeSi films on GaAs(110) grown by molecular beam epitaxy JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 45 SP - 055002 PY - 2012/01/01

Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy

@article{ author = { E. Luna and R. Hey and A. Trampert }, title = { Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy }, journal = { Journal of Vacuum Science and Technology B }, volume = { 30 }, year = { 2012 }, pages = { 02B108 } }

TY - JOUR AU - E. Luna AU - R. Hey AU - A. Trampert TI - Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 30 SP - 02B108 PY - 2012/01/01

Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surface

@article{ author = { C. Nacci and K. Kanisawa and S. Fölsch }, title = { Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surface }, journal = { Journal of Physics: Condensed Matter }, volume = { 24 }, year = { 2012 }, pages = { 394004 } }

TY - JOUR AU - C. Nacci AU - K. Kanisawa AU - S. Fölsch TI - Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surface JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 24 SP - 394004 PY - 2012/01/01

Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by in vivo x-ray diffraction

@article{ author = { M. Hanke and V. M. Kaganer and O. Bierwagen and M. Niehle and A. Trampert }, title = { Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 203 } }

TY - JOUR AU - M. Hanke AU - V. M. Kaganer AU - O. Bierwagen AU - M. Niehle AU - A. Trampert TI - Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 203 PY - 2012/01/01

Acoustically driven photon antibunching in nanowires

@article{ author = { A. Hernández-Mínguez and M. Möller and S. Breuer and C. Pfüller and C. Somaschini and S. Lazic and O. Brandt and A. Garcia-Cristobal and M. M. de Lima Jr. and A. Cantarero and L. Geelhaar and H. Riechert and P. V. Santos }, title = { Acoustically driven photon antibunching in nanowires }, journal = { Nano Letters }, volume = { 12 }, year = { 2012 }, pages = { 252 } }

TY - JOUR AU - A. Hernández-Mínguez AU - M. Möller AU - S. Breuer AU - C. Pfüller AU - C. Somaschini AU - S. Lazic AU - O. Brandt AU - A. Garcia-Cristobal AU - M. M. de Lima Jr. AU - A. Cantarero AU - L. Geelhaar AU - H. Riechert AU - P. V. Santos TI - Acoustically driven photon antibunching in nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 12 SP - 252 PY - 2012/01/01

Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance

@article{ author = { P. Bruski and K.-J. Friedland and R. Farshchi and J. Herfort and M. Ramsteiner }, title = { Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance }, journal = { Solid State Communications }, volume = { 152 }, year = { 2012 }, pages = { 1131 } }

TY - JOUR AU - P. Bruski AU - K.-J. Friedland AU - R. Farshchi AU - J. Herfort AU - M. Ramsteiner TI - Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 152 SP - 1131 PY - 2012/01/01

Mechanism for non-classical light emission from acoustically populated (311)A GaAs quantum wires

@article{ author = { S. Lazic and R. Hey and P. V. Santos }, title = { Mechanism for non-classical light emission from acoustically populated (311)A GaAs quantum wires }, journal = { New Journal Physics }, volume = { 14 }, year = { 2012 }, pages = { 013005 } }

TY - JOUR AU - S. Lazic AU - R. Hey AU - P. V. Santos TI - Mechanism for non-classical light emission from acoustically populated (311)A GaAs quantum wires JF - New Journal Physics JA - New J. Phys. J1 - VL - 14 SP - 013005 PY - 2012/01/01

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt and S. Fernández-Garrido and P. Dogan and L. Geelhaar and H. Riechert }, title = { Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 115325 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt AU - S. Fernández-Garrido AU - P. Dogan AU - L. Geelhaar AU - H. Riechert TI - Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 115325 PY - 2012/01/01

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

@article{ author = { A. Davydok and S. Breuer and A. Biermanns and L. Geelhaar and U. Pietsch }, title = { Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 109 } }

TY - JOUR AU - A. Davydok AU - S. Breuer AU - A. Biermanns AU - L. Geelhaar AU - U. Pietsch TI - Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 109 PY - 2012/01/01

X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films

@article{ author = { V. S. Kopp and V. M. Kaganer and J. Schwarzkopf and F. Waidick and T. Remmele and A. Kwasniewski and M. Schmidbauer }, title = { X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films }, journal = { Acta Crystallographica A }, volume = { 68 }, year = { 2012 }, pages = { 148 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - J. Schwarzkopf AU - F. Waidick AU - T. Remmele AU - A. Kwasniewski AU - M. Schmidbauer TI - X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 68 SP - 148 PY - 2012/01/01

Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction

@article{ author = { A. Biermanns and S. Breuer and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction }, journal = { Journal of Applied Crystallography }, volume = { 45 }, year = { 2012 }, pages = { 239 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 45 SP - 239 PY - 2012/01/01

Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films

@article{ author = { Y. Takagaki and B. Jenichen and U. Jahn and M. Ramsteiner and K.-J. Friedland }, title = { Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 115314 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland TI - Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 115314 PY - 2012/01/01

Probing individual weakly-coupled -conjugated molecules on semiconductor surfaces

@article{ author = { G. Münnich and F. Albrecht and C. Nacci and M. Utz and D. Schuh and K. Kanisawa and S. Fölsch and J. Repp }, title = { Probing individual weakly-coupled -conjugated molecules on semiconductor surfaces }, journal = { Journal of Applied Physics }, volume = { 112 }, year = { 2012 }, pages = { 034312 } }

TY - JOUR AU - G. Münnich AU - F. Albrecht AU - C. Nacci AU - M. Utz AU - D. Schuh AU - K. Kanisawa AU - S. Fölsch AU - J. Repp TI - Probing individual weakly-coupled -conjugated molecules on semiconductor surfaces JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 112 SP - 034312 PY - 2012/01/01

Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen }, title = { Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 27 }, year = { 2012 }, pages = { 035015 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen TI - Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 27 SP - 035015 PY - 2012/01/01

Quantitative description for the growth rate of self-induced GaN nanowires

@article{ author = { V. Consonni and V. G. Dubrovskii and A. Trampert and L. Geelhaar and H. Riechert }, title = { Quantitative description for the growth rate of self-induced GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 155313 } }

TY - JOUR AU - V. Consonni AU - V. G. Dubrovskii AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Quantitative description for the growth rate of self-induced GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 155313 PY - 2012/01/01

The influence of Mg doping on the nucleation of self-induced GaN nanowires

@article{ author = { F. Limbach and R. Caterino and T. Gotschke and T. Stoica and R. Calarco and L. Geelhaar and H. Riechert }, title = { The influence of Mg doping on the nucleation of self-induced GaN nanowires }, journal = { AIP Advances }, volume = { 2 }, year = { 2012 }, pages = { 012157 } }

TY - JOUR AU - F. Limbach AU - R. Caterino AU - T. Gotschke AU - T. Stoica AU - R. Calarco AU - L. Geelhaar AU - H. Riechert TI - The influence of Mg doping on the nucleation of self-induced GaN nanowires JF - AIP Advances JA - AIP Adv. J1 - VL - 2 SP - 012157 PY - 2012/01/01

Epitaxial phase-change materials

@article{ author = { P. Rodenbach and R. Calarco and K. Perumal and F. Katmis and M. Hanke and A. Proessdorf and W. Braun and A. Giussani and A. Trampert and H. Riechert and P. Fons and A. V. Kolobov }, title = { Epitaxial phase-change materials }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 6 }, year = { 2012 }, pages = { 415 } }

TY - JOUR AU - P. Rodenbach AU - R. Calarco AU - K. Perumal AU - F. Katmis AU - M. Hanke AU - A. Proessdorf AU - W. Braun AU - A. Giussani AU - A. Trampert AU - H. Riechert AU - P. Fons AU - A. V. Kolobov TI - Epitaxial phase-change materials JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 6 SP - 415 PY - 2012/01/01

Scaling growth kinetics of self-induced GaN nanowires

@article{ author = { V. G. Dubrovskii and V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Scaling growth kinetics of self-induced GaN nanowires }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 153101 } }

TY - JOUR AU - V. G. Dubrovskii AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Scaling growth kinetics of self-induced GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 153101 PY - 2012/01/01

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers

@article{ author = { M. Wienold and A. Tahraoui and L. Schrottke and R. Sharma and X. Lü and K. Biermann and R. Hey and H.T. Grahn }, title = { Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers }, journal = { Optics Express }, volume = { 20 }, year = { 2012 }, pages = { 11207 } }

TY - JOUR AU - M. Wienold AU - A. Tahraoui AU - L. Schrottke AU - R. Sharma AU - X. Lü AU - K. Biermann AU - R. Hey AU - H.T. Grahn TI - Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers JF - Optics Express JA - Opt. Express J1 - VL - 20 SP - 11207 PY - 2012/01/01

Strain and x-ray diffraction from axial nanowire heterostructures

@article{ author = { V. M. Kaganer and A. Yu. Belov }, title = { Strain and x-ray diffraction from axial nanowire heterostructures }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 125402 } }

TY - JOUR AU - V. M. Kaganer AU - A. Yu. Belov TI - Strain and x-ray diffraction from axial nanowire heterostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 125402 PY - 2012/01/01

Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy

@article{ author = { P. Dogan and O. Brandt and C. Hauswald and R. Calarco and A. Trampert and L. Geelhaar and H. Riechert }, title = { Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy }, journal = { Proceedings of SPIE }, volume = { 8262 }, year = { 2012 }, pages = { 82620P } }

TY - JOUR AU - P. Dogan AU - O. Brandt AU - C. Hauswald AU - R. Calarco AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8262 SP - 82620P PY - 2012/01/01

STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)

@article{ author = { K. Zenichowski and C. Nacci and S. Fölsch and J. Dokic and T. Klamroth and P. Saalfrank }, title = { STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100) }, journal = { Journal of Physics: Condensed Matter }, volume = { 24 }, year = { 2012 }, pages = { 394009 } }

TY - JOUR AU - K. Zenichowski AU - C. Nacci AU - S. Fölsch AU - J. Dokic AU - T. Klamroth AU - P. Saalfrank TI - STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100) JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 24 SP - 394009 PY - 2012/01/01

Atomic interface structure of bixbyite rare-earth sesquioxides grown epitaxially on Si(111)

@article{ author = { M. Niehle and A. Trampert }, title = { Atomic interface structure of bixbyite rare-earth sesquioxides grown epitaxially on Si(111) }, journal = { Journal of Physics D: Applied Physics }, volume = { 45 }, year = { 2012 }, pages = { 295302 } }

TY - JOUR AU - M. Niehle AU - A. Trampert TI - Atomic interface structure of bixbyite rare-earth sesquioxides grown epitaxially on Si(111) JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 45 SP - 295302 PY - 2012/01/01

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

@article{ author = { S. Fernández-Garrido and K. U. Ubben and J. Herfort and C. X. Gao and O. Brandt }, title = { Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 032404 } }

TY - JOUR AU - S. Fernández-Garrido AU - K. U. Ubben AU - J. Herfort AU - C. X. Gao AU - O. Brandt TI - Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 032404 PY - 2012/01/01

Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in n-type InN

@article{ author = { Y. J. Cho and M. Ramsteiner and O. Brandt }, title = { Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in <em>n</em>-type InN }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 195209 } }

TY - JOUR AU - Y. J. Cho AU - M. Ramsteiner AU - O. Brandt TI - Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in <em>n</em>-type InN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 195209 PY - 2012/01/01

Observation of bright polariton solitons in a semiconductor microcavity

@article{ author = { M. Sich and D. N. Krizhanovskii and M. S. Skolnick and A. V. Gorbach and R. Hartley and D. V. Skryabin and E. A. Cerda-Méndez and K. Biermann and R. Hey and P. V. Santos }, title = { Observation of bright polariton solitons in a semiconductor microcavity }, journal = { Nature Photonics }, volume = { 6 }, year = { 2012 }, pages = { 50 } }

TY - JOUR AU - M. Sich AU - D. N. Krizhanovskii AU - M. S. Skolnick AU - A. V. Gorbach AU - R. Hartley AU - D. V. Skryabin AU - E. A. Cerda-Méndez AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Observation of bright polariton solitons in a semiconductor microcavity JF - Nature Photonics JA - Nature Photon. J1 - VL - 6 SP - 50 PY - 2012/01/01

Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films

@article{ author = { C. A. Hurni and S. J. Choi and O. Bierwagen and J. S. Speck }, title = { Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 082106 } }

TY - JOUR AU - C. A. Hurni AU - S. J. Choi AU - O. Bierwagen AU - J. S. Speck TI - Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 082106 PY - 2012/01/01

Mechanical vibration of cylindrically rolled-up cantilever shell in microelectromechanical and nanoelectromechanical systems

@article{ author = { W. Izumida and Y. Hirayama and H. Okamoto and H. Yamaguchi and K.-J. Friedland }, title = { Mechanical vibration of cylindrically rolled-up cantilever shell in microelectromechanical and nanoelectromechanical systems }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 075313 } }

TY - JOUR AU - W. Izumida AU - Y. Hirayama AU - H. Okamoto AU - H. Yamaguchi AU - K.-J. Friedland TI - Mechanical vibration of cylindrically rolled-up cantilever shell in microelectromechanical and nanoelectromechanical systems JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 075313 PY - 2012/01/01

Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells

@article{ author = { R. Gargallo-Caballero and E. Luna and F. Ishikawa and A. Trampert }, title = { Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 171906 } }

TY - JOUR AU - R. Gargallo-Caballero AU - E. Luna AU - F. Ishikawa AU - A. Trampert TI - Strain-induced composition limitation in nitrogen -doped (In,Ga)As/GaAs quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 171906 PY - 2012/01/01

Local probing of propagating acoustic waves in a gigahertz echo chamber

@article{ author = { M. V. Gustafsson and P. V. Santos and G. Johansson and P. Delsing }, title = { Local probing of propagating acoustic waves in a gigahertz echo chamber }, journal = { Nature Physics }, volume = { 8 }, year = { 2012 }, pages = { 338 } }

TY - JOUR AU - M. V. Gustafsson AU - P. V. Santos AU - G. Johansson AU - P. Delsing TI - Local probing of propagating acoustic waves in a gigahertz echo chamber JF - Nature Physics JA - Nature Phys. J1 - VL - 8 SP - 338 PY - 2012/01/01

Anisotropic magnetic deflagration in single crystals of Gd₅Ge₄

@article{ author = { S. Velez and J. M. Hernandez and A. Garcia-Santiago and J. Tejada and V. K. Pecharsky and K. A. Gschneidner Jr. and D. L. Schlagel and T. A. Lograsso and P. V. Santos }, title = { Anisotropic magnetic deflagration in single crystals of Gd₅Ge₄ }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 054432 } }

TY - JOUR AU - S. Velez AU - J. M. Hernandez AU - A. Garcia-Santiago AU - J. Tejada AU - V. K. Pecharsky AU - K. A. Gschneidner Jr. AU - D. L. Schlagel AU - T. A. Lograsso AU - P. V. Santos TI - Anisotropic magnetic deflagration in single crystals of Gd₅Ge₄ JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 054432 PY - 2012/01/01

Polarized recombination of acoustically transported carriers in GaAs nanowires

@article{ author = { M. Möller and A. Hernández-Mínguez and S. Breuer and C. Pfüller and O. Brandt and M. M. de Lima Jr. and A. Cantarero and L. Geelhaar and H. Riechert and P. V. Santos }, title = { Polarized recombination of acoustically transported carriers in GaAs nanowires }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 247 } }

TY - JOUR AU - M. Möller AU - A. Hernández-Mínguez AU - S. Breuer AU - C. Pfüller AU - O. Brandt AU - M. M. de Lima Jr. AU - A. Cantarero AU - L. Geelhaar AU - H. Riechert AU - P. V. Santos TI - Polarized recombination of acoustically transported carriers in GaAs nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 247 PY - 2012/01/01

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

@article{ author = { I. Shlimak and A. Butenko and D. I. Golosov and K.-J. Friedland and S. V. Kravchenko }, title = { Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities }, journal = { Europhysics Letters }, volume = { 97 }, year = { 2012 }, pages = { 37002 } }

TY - JOUR AU - I. Shlimak AU - A. Butenko AU - D. I. Golosov AU - K.-J. Friedland AU - S. V. Kravchenko TI - Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 97 SP - 37002 PY - 2012/01/01

Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator

@article{ author = { Y. Takagaki }, title = { Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 155308 } }

TY - JOUR AU - Y. Takagaki TI - Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 155308 PY - 2012/01/01

Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy

@article{ author = { Y. J. Cho and O. Brandt and M. Korytov and M. Albrecht and V. M. Kaganer and M. Ramsteiner and H. Riechert }, title = { Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 152105 } }

TY - JOUR AU - Y. J. Cho AU - O. Brandt AU - M. Korytov AU - M. Albrecht AU - V. M. Kaganer AU - M. Ramsteiner AU - H. Riechert TI - Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 152105 PY - 2012/01/01

Ambipolar acoustic transport in silicon

@article{ author = { A. D. Barros and P. D. Batista and A. Tahraoui and J. A. Diniz and P. V. Santos }, title = { Ambipolar acoustic transport in silicon }, journal = { Journal of Applied Physics }, volume = { 112 }, year = { 2012 }, pages = { 013714- } }

TY - JOUR AU - A. D. Barros AU - P. D. Batista AU - A. Tahraoui AU - J. A. Diniz AU - P. V. Santos TI - Ambipolar acoustic transport in silicon JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 112 SP - 013714- PY - 2012/01/01

Noise-induced current switching in semiconductor superlattices: Observation of non-exponential kinetics in a high-dimensional system

@article{ author = { Yu. Bomze and R. Hey and H.T. Grahn and S. W. Teitsworth }, title = { Noise-induced current switching in semiconductor superlattices: Observation of non-exponential kinetics in a high-dimensional system }, journal = { Physical Review Letters }, volume = { 109 }, year = { 2012 }, pages = { 026801 } }

TY - JOUR AU - Yu. Bomze AU - R. Hey AU - H.T. Grahn AU - S. W. Teitsworth TI - Noise-induced current switching in semiconductor superlattices: Observation of non-exponential kinetics in a high-dimensional system JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 109 SP - 026801 PY - 2012/01/01

Controlled switching within an organic molecule deliberately pinned to a semiconductor surface

@article{ author = { C. Nacci and S. C. Erwin and K. Kanisawa and S. Fölsch }, title = { Controlled switching within an organic molecule deliberately pinned to a semiconductor surface }, journal = { ACS Nano }, volume = { 6 }, year = { 2012 }, pages = { 4190 } }

TY - JOUR AU - C. Nacci AU - S. C. Erwin AU - K. Kanisawa AU - S. Fölsch TI - Controlled switching within an organic molecule deliberately pinned to a semiconductor surface JF - ACS Nano JA - ACS Nano J1 - VL - 6 SP - 4190 PY - 2012/01/01

Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures

@article{ author = { F. Ducroquet and O. Engström and H. D. B. Gottlob and J. M. J. Lopes and J. Schubert }, title = { Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures }, journal = { ECS Transactions }, volume = { 45 }, year = { 2012 }, pages = { 103 } }

TY - JOUR AU - F. Ducroquet AU - O. Engström AU - H. D. B. Gottlob AU - J. M. J. Lopes AU - J. Schubert TI - Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures JF - ECS Transactions JA - ECS Trans. J1 - VL - 45 SP - 103 PY - 2012/01/01

Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

@article{ author = { E. Luna and A. M. Beltran and A. M. Sanchez and S. I. Molina }, title = { Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 011601 } }

TY - JOUR AU - E. Luna AU - A. M. Beltran AU - A. M. Sanchez AU - S. I. Molina TI - Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 011601 PY - 2012/01/01

Dynamic exciton-polariton macroscopic coherent phases in a tunable dot lattice

@article{ author = { E. A. Cerda-Méndez and D. N. Krizhanovskii and K. Biermann and R. Hey and M. S. Skolnick and P. V. Santos }, title = { Dynamic exciton-polariton macroscopic coherent phases in a tunable dot lattice }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 100301(R) } }

TY - JOUR AU - E. A. Cerda-Méndez AU - D. N. Krizhanovskii AU - K. Biermann AU - R. Hey AU - M. S. Skolnick AU - P. V. Santos TI - Dynamic exciton-polariton macroscopic coherent phases in a tunable dot lattice JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 100301(R) PY - 2012/01/01

Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films

@article{ author = { F. Gericke and T. Flissikowski and J. Lähnemann and F. Katmis and W. Braun and H. Riechert and H.T. Grahn }, title = { Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 113524 } }

TY - JOUR AU - F. Gericke AU - T. Flissikowski AU - J. Lähnemann AU - F. Katmis AU - W. Braun AU - H. Riechert AU - H.T. Grahn TI - Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 113524 PY - 2012/01/01

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111)

@article{ author = { A. Biermanns and S. Breuer and A. Trampert and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111) }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 305703 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Trampert AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111) JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 305703 PY - 2012/01/01

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

@article{ author = { A. Gorgis and T. Flissikowski and O. Brandt and C. Chèze and L. Geelhaar and H. Riechert and H.T. Grahn }, title = { Time-resolved photoluminescence spectroscopy of individual GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 041302(R) } }

TY - JOUR AU - A. Gorgis AU - T. Flissikowski AU - O. Brandt AU - C. Chèze AU - L. Geelhaar AU - H. Riechert AU - H.T. Grahn TI - Time-resolved photoluminescence spectroscopy of individual GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 041302(R) PY - 2012/01/01

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

@article{ author = { T. Schumann and K.-J. Friedland and M. H. Oliveira Jr. and A. Tahraoui and J. M. J. Lopes and H. Riechert }, title = { Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 235402 } }

TY - JOUR AU - T. Schumann AU - K.-J. Friedland AU - M. H. Oliveira Jr. AU - A. Tahraoui AU - J. M. J. Lopes AU - H. Riechert TI - Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 235402 PY - 2012/01/01

Vertical manipulation of native adatoms on the InAs(111)A surface

@article{ author = { J. Yang and C. Nacci and J. Martinez-Blanco and K. Kanisawa and S. Fölsch }, title = { Vertical manipulation of native adatoms on the InAs(111)A surface }, journal = { Journal of Physics: Condensed Matter }, volume = { 24 }, year = { 2012 }, pages = { 354008 } }

TY - JOUR AU - J. Yang AU - C. Nacci AU - J. Martinez-Blanco AU - K. Kanisawa AU - S. Fölsch TI - Vertical manipulation of native adatoms on the InAs(111)A surface JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 24 SP - 354008 PY - 2012/01/01

Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃

@article{ author = { Y. Takagaki and U. Jahn and M. Ramsteiner }, title = { Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ }, journal = { Semiconductor Science and Technology }, volume = { 27 }, year = { 2012 }, pages = { 085006 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - M. Ramsteiner TI - Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 27 SP - 085006 PY - 2012/01/01

Efficient room-temperature spin detector based on GaNAs

@article{ author = { Y. Puttisong and I. A. Buyanova and L. Geelhaar and H. Riechert and C. W. Tu and W. M. Chen }, title = { Efficient room-temperature spin detector based on GaNAs }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 07C303 } }

TY - JOUR AU - Y. Puttisong AU - I. A. Buyanova AU - L. Geelhaar AU - H. Riechert AU - C. W. Tu AU - W. M. Chen TI - Efficient room-temperature spin detector based on GaNAs JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 07C303 PY - 2012/01/01

GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

@article{ author = { O. Skibitzki and F. Hatami and Y. Yamamoto and P. Zaumseil and A. Trampert and M. A. Schubert and B. Tillack and W. T. Masselink and T. Schroeder }, title = { GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 073515 } }

TY - JOUR AU - O. Skibitzki AU - F. Hatami AU - Y. Yamamoto AU - P. Zaumseil AU - A. Trampert AU - M. A. Schubert AU - B. Tillack AU - W. T. Masselink AU - T. Schroeder TI - GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 073515 PY - 2012/01/01

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots

@article{ author = { R. Gargallo-Caballero and A. Guzman and J. M. Ulloa and A. Hierro and M. Hopkinson and E. Luna and A. Trampert }, title = { Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 083530 } }

TY - JOUR AU - R. Gargallo-Caballero AU - A. Guzman AU - J. M. Ulloa AU - A. Hierro AU - M. Hopkinson AU - E. Luna AU - A. Trampert TI - Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 083530 PY - 2012/01/01

Scaling thermodynamic model for the self-induced formation of GaN nanowires

@article{ author = { V. G. Dubrovskii and V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Scaling thermodynamic model for the self-induced formation of GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 165317 } }

TY - JOUR AU - V. G. Dubrovskii AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Scaling thermodynamic model for the self-induced formation of GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 165317 PY - 2012/01/01

X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates

@article{ author = { V. S. Kopp and V. M. Kaganer and G. Capellini and M. De Seta and P. Zaumseil }, title = { X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 245311 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - G. Capellini AU - M. De Seta AU - P. Zaumseil TI - X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 245311 PY - 2012/01/01

Backscattering from width variations in quasi-one-dimensional strips of topological insulators

@article{ author = { Y. Takagaki }, title = { Backscattering from width variations in quasi-one-dimensional strips of topological insulators }, journal = { Journal of Physics: Condensed Matter }, volume = { 24 }, year = { 2012 }, pages = { 435301 } }

TY - JOUR AU - Y. Takagaki TI - Backscattering from width variations in quasi-one-dimensional strips of topological insulators JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 24 SP - 435301 PY - 2012/01/01

Terahertz wavefront measurement with a Hartmann sensor

@article{ author = { H. Richter and M. Greiner-Bär and N. Deßmann and J. Pfund and M. Wienold and L. Schrottke and R. Hey and H.T. Grahn and H.-W. Hübers }, title = { Terahertz wavefront measurement with a Hartmann sensor }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 031103 } }

TY - JOUR AU - H. Richter AU - M. Greiner-Bär AU - N. Deßmann AU - J. Pfund AU - M. Wienold AU - L. Schrottke AU - R. Hey AU - H.T. Grahn AU - H.-W. Hübers TI - Terahertz wavefront measurement with a Hartmann sensor JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 031103 PY - 2012/01/01

Band gap of wurtzite GaAs: A resonant Raman study

@article{ author = { P. Kusch and S. Breuer and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Band gap of wurtzite GaAs: A resonant Raman study }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 075317 } }

TY - JOUR AU - P. Kusch AU - S. Breuer AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Band gap of wurtzite GaAs: A resonant Raman study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 075317 PY - 2012/01/01

Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces

@article{ author = { E. Luna and A. Guzman and A. Trampert and G. Alvarez }, title = { Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces }, journal = { Physical Review Letters }, volume = { 109 }, year = { 2012 }, pages = { 126101 } }

TY - JOUR AU - E. Luna AU - A. Guzman AU - A. Trampert AU - G. Alvarez TI - Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 109 SP - 126101 PY - 2012/01/01

On the epitaxy of germanium telluride thin films on silicon substrates

@article{ author = { A. Giussani and K. Perumal and M. Hanke and P. Rodenbach and H. Riechert and R. Calarco }, title = { On the epitaxy of germanium telluride thin films on silicon substrates }, journal = { Physica Status Solidi B }, volume = { 249 }, year = { 2012 }, pages = { 1939 } }

TY - JOUR AU - A. Giussani AU - K. Perumal AU - M. Hanke AU - P. Rodenbach AU - H. Riechert AU - R. Calarco TI - On the epitaxy of germanium telluride thin films on silicon substrates JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 249 SP - 1939 PY - 2012/01/01

Effects of Ga on the growth of InN on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy

@article{ author = { Y. J. Cho and M. Korytov and M. Albrecht and H. Riechert and O. Brandt }, title = { Effects of Ga on the growth of InN on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 052103 } }

TY - JOUR AU - Y. J. Cho AU - M. Korytov AU - M. Albrecht AU - H. Riechert AU - O. Brandt TI - Effects of Ga on the growth of InN on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 052103 PY - 2012/01/01

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

@article{ author = { C. Pfüller and M. Ramsteiner and O. Brandt and F. Grosse and A. Rathsfeld and G. Schmidt and L. Geelhaar and H. Riechert }, title = { Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 083104 } }

TY - JOUR AU - C. Pfüller AU - M. Ramsteiner AU - O. Brandt AU - F. Grosse AU - A. Rathsfeld AU - G. Schmidt AU - L. Geelhaar AU - H. Riechert TI - Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 083104 PY - 2012/01/01

Crystalline GeTe-based phase-change alloys: disorder in order

@article{ author = { M. Krbal and A. V. Kolobov and P. Fons and J. Tominaga and S. R. Elliott and J. Hegedus and A. Giussani and K. Perumal and R. Calarco and T. Matsunaga and N. Yamada and K. Nitta and T. Uruga }, title = { Crystalline GeTe-based phase-change alloys: disorder in order }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 045212 } }

TY - JOUR AU - M. Krbal AU - A. V. Kolobov AU - P. Fons AU - J. Tominaga AU - S. R. Elliott AU - J. Hegedus AU - A. Giussani AU - K. Perumal AU - R. Calarco AU - T. Matsunaga AU - N. Yamada AU - K. Nitta AU - T. Uruga TI - Crystalline GeTe-based phase-change alloys: disorder in order JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 045212 PY - 2012/01/01

Electrical spin injection into InN semiconductor nanowires

@article{ author = { S. Heedt and C. Morgan and K. Weis and D. Bürgler and R. Calarco and H. Hardtdegen and D. Grützmacher and Th. Schäpers }, title = { Electrical spin injection into InN semiconductor nanowires }, journal = { Nano Letters }, volume = { 12 }, year = { 2012 }, pages = { 4437 } }

TY - JOUR AU - S. Heedt AU - C. Morgan AU - K. Weis AU - D. Bürgler AU - R. Calarco AU - H. Hardtdegen AU - D. Grützmacher AU - Th. Schäpers TI - Electrical spin injection into InN semiconductor nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 12 SP - 4437 PY - 2012/01/01

Double resonance Raman effects in InN nanowires

@article{ author = { N. Domenech-Amador and R. Cusco and R. Calarco and T. Yamaguchi and Y. Nanishi and L. Artus }, title = { Double resonance Raman effects in InN nanowires }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 6 }, year = { 2012 }, pages = { 160 } }

TY - JOUR AU - N. Domenech-Amador AU - R. Cusco AU - R. Calarco AU - T. Yamaguchi AU - Y. Nanishi AU - L. Artus TI - Double resonance Raman effects in InN nanowires JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 6 SP - 160 PY - 2012/01/01

Longer InN phonon lifetimes in nanowires

@article{ author = { N. Domenech-Amador and R. Cusco and L. Artus and T. Stoica and R. Calarco }, title = { Longer InN phonon lifetimes in nanowires }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 085702 } }

TY - JOUR AU - N. Domenech-Amador AU - R. Cusco AU - L. Artus AU - T. Stoica AU - R. Calarco TI - Longer InN phonon lifetimes in nanowires JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 085702 PY - 2012/01/01

The physical origin of the InSb(111)A surface reconstruction transient

@article{ author = { A. Proessdorf and P. Rodenbach and F. Grosse and M. Hanke and W. Braun and H. Riechert and W. Hu and S. Fujikawa and M. Kozu and M. Takahasi }, title = { The physical origin of the InSb(111)A surface reconstruction transient }, journal = { Surface Science }, volume = { 606 }, year = { 2012 }, pages = { 1458 } }

TY - JOUR AU - A. Proessdorf AU - P. Rodenbach AU - F. Grosse AU - M. Hanke AU - W. Braun AU - H. Riechert AU - W. Hu AU - S. Fujikawa AU - M. Kozu AU - M. Takahasi TI - The physical origin of the InSb(111)A surface reconstruction transient JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 606 SP - 1458 PY - 2012/01/01

Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates

@article{ author = { A. Proessdorf and F. Grosse and K. Perumal and W. Braun and H. Riechert }, title = { Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 235301 } }

TY - JOUR AU - A. Proessdorf AU - F. Grosse AU - K. Perumal AU - W. Braun AU - H. Riechert TI - Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 235301 PY - 2012/01/01

Formation of a monocrystalline, M-plane AlN layer by the nitridation of γ-LiAlO₂(100)

@article{ author = { K. R. Wang and C. Mauder and Q. Wan and B. Jenichen and J. F. Woitok and H.T. Grahn and H. Kalisch and M. Heuken and A. Vescan and A. Trampert }, title = { Formation of a monocrystalline, M-plane AlN layer by the nitridation of <span class="math"><em>γ</em></span>-LiAlO₂(100) }, journal = { Applied Physics Express }, volume = { 5 }, year = { 2012 }, pages = { 105501 } }

TY - JOUR AU - K. R. Wang AU - C. Mauder AU - Q. Wan AU - B. Jenichen AU - J. F. Woitok AU - H.T. Grahn AU - H. Kalisch AU - M. Heuken AU - A. Vescan AU - A. Trampert TI - Formation of a monocrystalline, M-plane AlN layer by the nitridation of <span class="math"><em>γ</em></span>-LiAlO₂(100) JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 5 SP - 105501 PY - 2012/01/01

Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity

@article{ author = { S. Fernández-Garrido and X. Kong and T. Gotschke and R. Calarco and L. Geelhaar and A. Trampert and O. Brandt }, title = { Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity }, journal = { Nano Letters }, volume = { 12 }, year = { 2012 }, pages = { 6119 } }

TY - JOUR AU - S. Fernández-Garrido AU - X. Kong AU - T. Gotschke AU - R. Calarco AU - L. Geelhaar AU - A. Trampert AU - O. Brandt TI - Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity JF - Nano Letters JA - Nano Lett. J1 - VL - 12 SP - 6119 PY - 2012/01/01

Residual disorder and diffusion in thin Heusler alloy films

@article{ author = { B. Jenichen and J. Herfort and T. Hentschel and A. Nikulin and X. Kong and A. Trampert and I. Zivzak }, title = { Residual disorder and diffusion in thin Heusler alloy films }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 075319 } }

TY - JOUR AU - B. Jenichen AU - J. Herfort AU - T. Hentschel AU - A. Nikulin AU - X. Kong AU - A. Trampert AU - I. Zivzak TI - Residual disorder and diffusion in thin Heusler alloy films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 075319 PY - 2012/01/01

Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

@article{ author = { B. Jenichen and U. Jahn and A. Nikulin and R. Hey and P. V. Santos and K.-J. Friedland }, title = { Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 155309 } }

TY - JOUR AU - B. Jenichen AU - U. Jahn AU - A. Nikulin AU - R. Hey AU - P. V. Santos AU - K.-J. Friedland TI - Inhomogeneous micro-strain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 155309 PY - 2012/01/01

Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect

@article{ author = { Y. Takagaki and A. Giussani and K. Perumal and R. Calarco and K.-J. Friedland }, title = { Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 125137 } }

TY - JOUR AU - Y. Takagaki AU - A. Giussani AU - K. Perumal AU - R. Calarco AU - K.-J. Friedland TI - Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 125137 PY - 2012/01/01

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires

@article{ author = { X. Kong and S. Albert and A. Bengoechea-Encabo and M. A. Sánchez-García and E. Calleja and A. Trampert }, title = { Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 485701 } }

TY - JOUR AU - X. Kong AU - S. Albert AU - A. Bengoechea-Encabo AU - M. A. Sánchez-García AU - E. Calleja AU - A. Trampert TI - Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 485701 PY - 2012/01/01

Dynamic control of photoluminescence polarization properties in GaAs/AlAs quantum wells by surface acoustic waves

@article{ author = { T. Sogawa and H. Sanada and H. Gotoh and H. Yamaguchi and P. V. Santos }, title = { Dynamic control of photoluminescence polarization properties in GaAs/AlAs quantum wells by surface acoustic waves }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 035311- } }

TY - JOUR AU - T. Sogawa AU - H. Sanada AU - H. Gotoh AU - H. Yamaguchi AU - P. V. Santos TI - Dynamic control of photoluminescence polarization properties in GaAs/AlAs quantum wells by surface acoustic waves JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 035311- PY - 2012/01/01

Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave

@article{ author = { T. Sogawa and H. Sanada and H. Gotoh and H. Yamaguchi and P. V. Santos }, title = { Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 162109 } }

TY - JOUR AU - T. Sogawa AU - H. Sanada AU - H. Gotoh AU - H. Yamaguchi AU - P. V. Santos TI - Spatially modulated photoluminescence properties in dynamically strained GaAs/AlAs quantum wells by surface acoustic wave JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 162109 PY - 2012/01/01

Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

@article{ author = { P. Rodenbach and A. Giussani and K. Perumal and M. Hanke and M. Dubslaff and H. Riechert and R. Calarco and M. Burghammer and A. V. Kolobov and P. Fons }, title = { Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 061903 } }

TY - JOUR AU - P. Rodenbach AU - A. Giussani AU - K. Perumal AU - M. Hanke AU - M. Dubslaff AU - H. Riechert AU - R. Calarco AU - M. Burghammer AU - A. V. Kolobov AU - P. Fons TI - Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 061903 PY - 2012/01/01

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

@article{ author = { S. Albert and A. Bengoechea-Encabo and P. Lefebvre and F. Barbagini and M. A. Sánchez-García and E. Calleja and U. Jahn and A. Trampert }, title = { Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 231906 } }

TY - JOUR AU - S. Albert AU - A. Bengoechea-Encabo AU - P. Lefebvre AU - F. Barbagini AU - M. A. Sánchez-García AU - E. Calleja AU - U. Jahn AU - A. Trampert TI - Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 231906 PY - 2012/01/01

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

@article{ author = { S. F. Li and X. Wang and S. Fündling and M. Erenburg and J. Ledig and J. D. Wei and H. H. Wehmann and A. Waag and W. Bergbauer and M. Mandl and M. Strassburg and A. Trampert and U. Jahn and H. Riechert and H. Jönen and A. Hangleiter }, title = { Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 032103 } }

TY - JOUR AU - S. F. Li AU - X. Wang AU - S. Fündling AU - M. Erenburg AU - J. Ledig AU - J. D. Wei AU - H. H. Wehmann AU - A. Waag AU - W. Bergbauer AU - M. Mandl AU - M. Strassburg AU - A. Trampert AU - U. Jahn AU - H. Riechert AU - H. Jönen AU - A. Hangleiter TI - Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 032103 PY - 2012/01/01

Nonlinear electron transport in an electron-hole plasma

@article{ author = { P. Bowlan and W. Kuehn and K. Reimann and M. Woerner and T. Elsaesser and R. Hey and C. Flytzanis }, title = { Nonlinear electron transport in an electron-hole plasma }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 165206 } }

TY - JOUR AU - P. Bowlan AU - W. Kuehn AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - R. Hey AU - C. Flytzanis TI - Nonlinear electron transport in an electron-hole plasma JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 85 SP - 165206 PY - 2012/01/01

Tunable coupled surface acoustic cavities

@article{ author = { M. M. de Lima Jr. and P. V. Santos and Yu. A. Kosevich and A. Cantarero }, title = { Tunable coupled surface acoustic cavities }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 261904 } }

TY - JOUR AU - M. M. de Lima Jr. AU - P. V. Santos AU - Yu. A. Kosevich AU - A. Cantarero TI - Tunable coupled surface acoustic cavities JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 261904 PY - 2012/01/01

Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

@article{ author = { M. Wölz and S. Fernández-Garrido and C. Hauswald and O. Brandt and F. Limbach and L. Geelhaar and H. Riechert }, title = { Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry }, journal = { Crystal Growth & Design }, volume = { 12 }, year = { 2012 }, pages = { 5686 } }

TY - JOUR AU - M. Wölz AU - S. Fernández-Garrido AU - C. Hauswald AU - O. Brandt AU - F. Limbach AU - L. Geelhaar AU - H. Riechert TI - Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 12 SP - 5686 PY - 2012/01/01

Growth of wurtzite InN on bulk In₂O₃(111) wafers

@article{ author = { S. Sadofev and Y. J. Cho and O. Brandt and M. Ramsteiner and R. Calarco and H. Riechert and S. C. Erwin and Z. Galazka and M. Korytov and M. Albrecht and R. Uecker and R. Fornari }, title = { Growth of wurtzite InN on bulk In₂O₃(111) wafers }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 172102 } }

TY - JOUR AU - S. Sadofev AU - Y. J. Cho AU - O. Brandt AU - M. Ramsteiner AU - R. Calarco AU - H. Riechert AU - S. C. Erwin AU - Z. Galazka AU - M. Korytov AU - M. Albrecht AU - R. Uecker AU - R. Fornari TI - Growth of wurtzite InN on bulk In₂O₃(111) wafers JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 172102 PY - 2012/01/01

InN nanowires: Growth and optoelectronic properties

@article{ author = { R. Calarco }, title = { InN nanowires: Growth and optoelectronic properties }, journal = { Materials }, volume = { 5 }, year = { 2012 }, pages = { 2137 } }

TY - JOUR AU - R. Calarco TI - InN nanowires: Growth and optoelectronic properties JF - Materials JA - Materials J1 - VL - 5 SP - 2137 PY - 2012/01/01

Shell-doping of GaAs nanowires with Si for n-type conductivity

@article{ author = { E. Dimakis and M. Ramsteiner and A. Tahraoui and H. Riechert and L. Geelhaar }, title = { Shell-doping of GaAs nanowires with Si for n-type conductivity }, journal = { Nano Research }, volume = { 5 }, year = { 2012 }, pages = { 796 } }

TY - JOUR AU - E. Dimakis AU - M. Ramsteiner AU - A. Tahraoui AU - H. Riechert AU - L. Geelhaar TI - Shell-doping of GaAs nanowires with Si for n-type conductivity JF - Nano Research JA - Nano Res. J1 - VL - 5 SP - 796 PY - 2012/01/01

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

@article{ author = { F. Barbagini and A. Bengoechea-Encabo and S. Albert and P. Lefebvre and J. Martinez and M. A. Sánchez-García and A. Trampert and E. Calleja }, title = { E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods }, journal = { Microelectronic Engineering }, volume = { 98 }, year = { 2012 }, pages = { 374 } }

TY - JOUR AU - F. Barbagini AU - A. Bengoechea-Encabo AU - S. Albert AU - P. Lefebvre AU - J. Martinez AU - M. A. Sánchez-García AU - A. Trampert AU - E. Calleja TI - E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods JF - Microelectronic Engineering JA - Microelectron. Eng. J1 - MiEn VL - 98 SP - 374 PY - 2012/01/01

Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography

@article{ author = { S. Büyükköse and B. Vratzov and D. Atacc and J. van der Veen and P. V. Santos and W. G. van der Wiel }, title = { Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 315303 } }

TY - JOUR AU - S. Büyükköse AU - B. Vratzov AU - D. Atacc AU - J. van der Veen AU - P. V. Santos AU - W. G. van der Wiel TI - Ultrahigh-frequency surface acoustic wave transducers on ZnO/SiO₂/Si using nanoimprint lithography JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 23 SP - 315303 PY - 2012/01/01

Wavefunction of polariton condensates in a tunable acoustic lattice

@article{ author = { E. A. Cerda-Méndez and D. N. Krizhanovskii and K. Biermann and R. Hey and M. S. Skolnick and P. V. Santos }, title = { Wavefunction of polariton condensates in a tunable acoustic lattice }, journal = { New Journal Physics }, volume = { 14 }, year = { 2012 }, pages = { 075011 } }

TY - JOUR AU - E. A. Cerda-Méndez AU - D. N. Krizhanovskii AU - K. Biermann AU - R. Hey AU - M. S. Skolnick AU - P. V. Santos TI - Wavefunction of polariton condensates in a tunable acoustic lattice JF - New Journal Physics JA - New J. Phys. J1 - VL - 14 SP - 075011 PY - 2012/01/01

Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope

@article{ author = { H. Amari and M. J. Kappers and C. J. Humphreys and C. Chèze and T. Walther }, title = { Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope }, journal = { Physica Status Solidi C }, volume = { 9 }, year = { 2012 }, pages = { 1079 } }

TY - JOUR AU - H. Amari AU - M. J. Kappers AU - C. J. Humphreys AU - C. Chèze AU - T. Walther TI - Measurement of the Al content in AlGaN epitaxial layers by combined energy-dispersive X-ray and electron energy-loss spectroscopy in a transmission electron microscope JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 9 SP - 1079 PY - 2012/01/01

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

@article{ author = { P. Drechsel and P. Stauss and W. Bergbauer and P. Rode and S. Fritze and A. Krost and T. Markurt and T. Schulz and M. Albrecht and H. Riechert and U. Steegmüller }, title = { Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates }, journal = { Physica Status Solidi A }, volume = { 209 }, year = { 2012 }, pages = { 427 } }

TY - JOUR AU - P. Drechsel AU - P. Stauss AU - W. Bergbauer AU - P. Rode AU - S. Fritze AU - A. Krost AU - T. Markurt AU - T. Schulz AU - M. Albrecht AU - H. Riechert AU - U. Steegmüller TI - Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 209 SP - 427 PY - 2012/01/01

Electrically tunable electron spin lifetimes in GaAs(111)B quantum wells

@article{ author = { K. Biermann and A. Hernández-Mínguez and R. Hey and P. V. Santos }, title = { Electrically tunable electron spin lifetimes in GaAs(111)B quantum wells }, journal = { Journal of Applied Physics }, volume = { 112 }, year = { 2012 }, pages = { 083913 } }

TY - JOUR AU - K. Biermann AU - A. Hernández-Mínguez AU - R. Hey AU - P. V. Santos TI - Electrically tunable electron spin lifetimes in GaAs(111)B quantum wells JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 112 SP - 083913 PY - 2012/01/01

Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface

@article{ author = { O. Bierwagen and T. Nagata and M. E. White and M.-Y. Tsai and J. S. Speck }, title = { Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface }, journal = { Journal of Materials Research }, volume = { 27 }, year = { 2012 }, pages = { 2232 } }

TY - JOUR AU - O. Bierwagen AU - T. Nagata AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck TI - Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 27 SP - 2232 PY - 2012/01/01

Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches

@article{ author = { T. Stoica and A. Haab and D. Griesche and M. Mikulics and F. Limbach and T. Schumann and T. Gotschke and E. Sutter and R. Calarco and H. Hardtdegen and D. Grützmacher }, title = { Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches }, journal = { Proceedings of the Materials Research Society }, volume = { 1408 }, year = { 2012 }, pages = { 29 } }

TY - JOUR AU - T. Stoica AU - A. Haab AU - D. Griesche AU - M. Mikulics AU - F. Limbach AU - T. Schumann AU - T. Gotschke AU - E. Sutter AU - R. Calarco AU - H. Hardtdegen AU - D. Grützmacher TI - Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches JF - Proceedings of the Materials Research Society JA - Proc. MRS J1 - VL - 1408 SP - 29 PY - 2012/01/01

Exciton polaritons in periodic acoustic potentials

@article{ author = { E. Cerda-Mendez and D. Krizhanovskii and M. Wouters and K. Biermann and R. Hey and M. S. Skolnick and P. V. Santos }, title = { Exciton polaritons in periodic acoustic potentials }, journal = { Exciton Polaritons in Microcavities: New Frontiers; edited by D. Sanvitto and V. Timofeev (Springer Verlag, Heidelberg, 2012) }, volume = { }, year = { 2012 }, pages = { 289 } }

TY - JOUR AU - E. Cerda-Mendez AU - D. Krizhanovskii AU - M. Wouters AU - K. Biermann AU - R. Hey AU - M. S. Skolnick AU - P. V. Santos TI - Exciton polaritons in periodic acoustic potentials JF - Exciton Polaritons in Microcavities: New Frontiers; edited by D. Sanvitto and V. Timofeev (Springer Verlag, Heidelberg, 2012) JA - Exciton Polaritons in Microcavities: New Frontiers J1 - VL - SP - 289 PY - 2012/01/01

Electrical suppression of spin relaxation in GaAs(111)B quantum wells

@article{ author = { A. Hernández-Mínguez and K. Biermann and R. Hey and P. V. Santos }, title = { Electrical suppression of spin relaxation in GaAs(111)B quantum wells }, journal = { Physical Review Letters }, volume = { 109 }, year = { 2012 }, pages = { 266602 } }

TY - JOUR AU - A. Hernández-Mínguez AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Electrical suppression of spin relaxation in GaAs(111)B quantum wells JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 109 SP - 266602 PY - 2012/01/01

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and A. M. Sanchez and O. Bierwagen and M. E. White and S. Gorfman and P. A. Thomas and J. S. Speck and C. F. McConville }, title = { Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 245315 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - A. M. Sanchez AU - O. Bierwagen AU - M. E. White AU - S. Gorfman AU - P. A. Thomas AU - J. S. Speck AU - C. F. McConville TI - Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 245315 PY - 2012/01/01

Gigahertz monolithic delay lines for surface acoustic waves on silicon

@article{ author = { P. V. Santos and S. Rauwerdink and K. Biermann and B. Drescher and W. Seidel and M. Kaynak and U. Kaletta and M. Fraschke and D. Wolansky and Ch. Wenger }, title = { Gigahertz monolithic delay lines for surface acoustic waves on silicon }, journal = { IOP Conf. Series: Materials Science and Engineering }, volume = { 41 }, year = { 2012 }, pages = { 012009 } }

TY - JOUR AU - P. V. Santos AU - S. Rauwerdink AU - K. Biermann AU - B. Drescher AU - W. Seidel AU - M. Kaynak AU - U. Kaletta AU - M. Fraschke AU - D. Wolansky AU - Ch. Wenger TI - Gigahertz monolithic delay lines for surface acoustic waves on silicon JF - IOP Conf. Series: Materials Science and Engineering JA - IOP Conf. Series: Mater. Sci. Eng. J1 - VL - 41 SP - 012009 PY - 2012/01/01

Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

@article{ author = { M. Wölz and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)] }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 179902 } }

TY - JOUR AU - M. Wölz AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)] JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 179902 PY - 2012/01/01

Ordered GaN/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

@article{ author = { S. Albert and A. Bengoechea-Encabo and M. A. Sánchez-García and F. Barbagini and E. Calleja and E. Luna and A. Trampert and U. Jahn and P. Levebvre and L. L. Lopez and S. Estrade and J. M. Rebled and F. Peiro and G. Nataf and P. De Mierry and J. Zuniga-Perez }, title = { Ordered GaN/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission }, journal = { International Journal of High Speed Electronics and Systems }, volume = { 21 }, year = { 2012 }, pages = { 1250010 } }

TY - JOUR AU - S. Albert AU - A. Bengoechea-Encabo AU - M. A. Sánchez-García AU - F. Barbagini AU - E. Calleja AU - E. Luna AU - A. Trampert AU - U. Jahn AU - P. Levebvre AU - L. L. Lopez AU - S. Estrade AU - J. M. Rebled AU - F. Peiro AU - G. Nataf AU - P. De Mierry AU - J. Zuniga-Perez TI - Ordered GaN/InGaN nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission JF - International Journal of High Speed Electronics and Systems JA - Int. J. High Speed Electron. Syst. J1 - VL - 21 SP - 1250010 PY - 2012/01/01

Polarity control in 3D GaN structures grown by selective area MOVPE

@article{ author = { X. Wang and S. F. Li and S. Fündling and J. Wei and M. Erenburg and H.-H. Wehmann and A. Waag and U. Jahn and H. Riechert }, title = { Polarity control in 3D GaN structures grown by selective area MOVPE }, journal = { Crystal Growth & Design }, volume = { 12 }, year = { 2012 }, pages = { 2552 } }

TY - JOUR AU - X. Wang AU - S. F. Li AU - S. Fündling AU - J. Wei AU - M. Erenburg AU - H.-H. Wehmann AU - A. Waag AU - U. Jahn AU - H. Riechert TI - Polarity control in 3D GaN structures grown by selective area MOVPE JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 12 SP - 2552 PY - 2012/01/01