The experiments are carried out in GaAs core-shell nanowires transferred to a LiNbO3 substrate with interditigal transducers for SAW generation. Carriers generated at one end of the NW by picosecond laser pulses are acoustically transferred to a second location several micrometers away, leading to the remote emission of sub-nanosecond light pulses synchronized with the SAW frequency (shown in original publication (1)). The dynamics of the carrier transport is investigated by spatially and time-resolved photoluminescence, and is well-reproduced by computer simulations.
The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at GHz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of anti-bunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.
|1||Author||M. Möller , A. Hernández-Mínguez , S. Breuer , C. Pfüller , O. Brandt , M. M. de Lima Jr. , A. Cantarero , L. Geelhaar , H. Riechert , P. V. Santos|
Polarized recombination of acoustically transported carriers in GaAs nanowires
|Source||Nanoscale Res. Lett. , 7 , 247 ( 2012 )|
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