PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

161 Author H. Amari , L. Lari , H. Y. Zhang , L. Geelhaar , C. Chèze , M. J. Kappers , C. McAleese , C. J. Humphreys , T. Walther
Title

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope

Source J. Phys.: Conf. Ser. , 326 , 012028 ( 2011 )
2214 Cite : Bibtex RIS
H. Amari, L. Lari, H. Y. Zhang, L. Geelhaar, C. Chèze, M. J. Kappers, C. McAleese, C. J. Humphreys, and T. Walther

162 Author H. Amari , H. Y. Zhang , L. Geelhaar , C. Chèze , M. J. Kappers , T. Walther
Title

Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

Source J. Phys.: Conf. Ser. , 326 , 012039 ( 2011 )
2215 Cite : Bibtex RIS
H. Amari, H. Y. Zhang, L. Geelhaar, C. Chèze, M. J. Kappers, and T. Walther

163 Author V. Consonni , A. Trampert , L. Geelhaar , H. Riechert
Title

Physical origin of the incubation time of self-induced GaN nanowires

Source Appl. Phys. Lett. , 99 , 033102 ( 2011 )
Download: PDF | 2221 Cite : Bibtex RIS
V. Consonni, A. Trampert, L. Geelhaar, and H. Riechert

164 Author E. Dimakis , J. Lähnemann , U. Jahn , S. Breuer , M. Hilse , L. Geelhaar , H. Riechert
Title

Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111)

Source Cryst. Growth Des. , 11 , 4001 ( 2011 )
2253 Cite : Bibtex RIS
E. Dimakis, J. Lähnemann, U. Jahn, S. Breuer, M. Hilse, L. Geelhaar, and H. Riechert

165 Author P. Dogan , O. Brandt , C. Pfüller , J. Lähnemann , U. Jahn , C. Roder , A. Trampert , L. Geelhaar , H. Riechert
Title

Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

Source Cryst. Growth Des. , 11 , 4257 ( 2011 )
2255 Cite : Bibtex RIS
P. Dogan, O. Brandt, C. Pfüller, J. Lähnemann, U. Jahn, C. Roder, A. Trampert, L. Geelhaar, and H. Riechert

166 Author D. Martin , A. Heinzig , M. Grube , L. Geelhaar , T. Mikolajick , H. Riechert , W. M. Weber
Title

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors

Source Phys. Rev. Lett. , 107 , 216807 ( 2011 )
Download: PDF | 2258 Cite : Bibtex RIS
D. Martin, A. Heinzig, M. Grube, L. Geelhaar, T. Mikolajick, H. Riechert, and W. M. Weber

167 Author O. Brandt , C. Pfüller , C. Chèze , L. Geelhaar , H. Riechert
Title

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Source Phys. Rev. B , 81 , 045302 ( 2010 )
Download: PDF | 2009 Cite : Bibtex RIS
O. Brandt, C. Pfüller, C. Chèze, L. Geelhaar, and H. Riechert

168 Author V. Consonni , M. Knelangen , L. Geelhaar , A. Trampert , H. Riechert
Title

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Source Phys. Rev. B , 81 , 085310 ( 2010 )
Download: PDF | 2024 Cite : Bibtex RIS
V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert

169 Author L. Ivanova , H. Eisele , A. Lenz , R. Timm , O. Schumann , L. Geelhaar , H. Riechert , M. Dähne
Title

Effect of nitrogen on the InAs/GaAs quantum dot formation

Source Phys. Status Solidi C , 7 , 355 ( 2010 )
2034 Cite : Bibtex RIS
L. Ivanova, H. Eisele, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, H. Riechert, and M. Dähne

170 Author C. Chèze , L. Geelhaar , O. Brandt , W. M. Weber , H. Riechert , S. Münch , R. Rothemund , S. Reitzenstein , A. Forchel , T. Kehagias , P. Komninou , G. P. Dimitrakopulos , T. Karakostas
Title

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Source Nano Res. , 3 , 528 ( 2010 )
2069 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas