PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

161 Author P. Dogan , O. Brandt , C. Pfüller , J. Lähnemann , U. Jahn , C. Roder , A. Trampert , L. Geelhaar , H. Riechert
Title

Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

Source Cryst. Growth Des. , 11 , 4257 ( 2011 )
2255 Cite : Bibtex RIS
P. Dogan, O. Brandt, C. Pfüller, J. Lähnemann, U. Jahn, C. Roder, A. Trampert, L. Geelhaar, and H. Riechert

162 Author D. Martin , A. Heinzig , M. Grube , L. Geelhaar , T. Mikolajick , H. Riechert , W. M. Weber
Title

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors

Source Phys. Rev. Lett. , 107 , 216807 ( 2011 )
Download: PDF | 2258 Cite : Bibtex RIS
D. Martin, A. Heinzig, M. Grube, L. Geelhaar, T. Mikolajick, H. Riechert, and W. M. Weber

163 Author O. Brandt , C. Pfüller , C. Chèze , L. Geelhaar , H. Riechert
Title

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Source Phys. Rev. B , 81 , 045302 ( 2010 )
Download: PDF | 2009 Cite : Bibtex RIS
O. Brandt, C. Pfüller, C. Chèze, L. Geelhaar, and H. Riechert

164 Author V. Consonni , M. Knelangen , L. Geelhaar , A. Trampert , H. Riechert
Title

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

Source Phys. Rev. B , 81 , 085310 ( 2010 )
Download: PDF | 2024 Cite : Bibtex RIS
V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert

165 Author L. Ivanova , H. Eisele , A. Lenz , R. Timm , O. Schumann , L. Geelhaar , H. Riechert , M. Dähne
Title

Effect of nitrogen on the InAs/GaAs quantum dot formation

Source Phys. Status Solidi C , 7 , 355 ( 2010 )
2034 Cite : Bibtex RIS
L. Ivanova, H. Eisele, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, H. Riechert, and M. Dähne

166 Author C. Chèze , L. Geelhaar , O. Brandt , W. M. Weber , H. Riechert , S. Münch , R. Rothemund , S. Reitzenstein , A. Forchel , T. Kehagias , P. Komninou , G. P. Dimitrakopulos , T. Karakostas
Title

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Source Nano Res. , 3 , 528 ( 2010 )
2069 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas

167 Author C. Pfüller , O. Brandt , F. Grosse , T. Flissikowski , C. Chèze , V. Consonni , L. Geelhaar , H.T. Grahn , H. Riechert
Title

Unpinning the Fermi level in GaN nanowires by ultraviolet radiation

Source Phys. Rev. B , 82 , 045320 ( 2010 )
Download: PDF | 2075 Cite : Bibtex RIS
C. Pfüller, O. Brandt, F. Grosse, T. Flissikowski, C. Chèze, V. Consonni, L. Geelhaar, H.T. Grahn, and H. Riechert

168 Author C. Chèze , L. Geelhaar , B. Jenichen , H. Riechert
Title

Different growth rates for catalyst-induced and self-induced GaN nanowires

Source Appl. Phys. Lett. , 97 , 153105 ( 2010 )
2103 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, B. Jenichen, and H. Riechert

169 Author L. Lari , T. Walther , K. Black , R. T. Murray , T. J. Bullough , P. R. Chalker , C. Chèze , L. Geelhaar , H. Riechert
Title

GaN, AlGaN, HfO2 based radial heterostructure nanowires

Source J. Phys.: Conf. Ser. , 209 , 012011 ( 2010 )
2088 Cite : Bibtex RIS
L. Lari, T. Walther, K. Black, R. T. Murray, T. J. Bullough, P. R. Chalker, C. Chèze, L. Geelhaar, and H. Riechert

170 Author M. Hilse , M. Ramsteiner , S. Breuer , L. Geelhaar , H. Riechert
Title

Incorporation of the dopants Si and Be into GaAs nanowires

Source Appl. Phys. Lett. , 96 , 193104 ( 2010 )
Download: PDF | 2090 Cite : Bibtex RIS
M. Hilse, M. Ramsteiner, S. Breuer, L. Geelhaar, and H. Riechert