Dr. Michael Hanke

Epitaxial phase-change materials

@article{ author = { P. Rodenbach and R. Calarco and K. Perumal and F. Katmis and M. Hanke and A. Proessdorf and W. Braun and A. Giussani and A. Trampert and H. Riechert and P. Fons and A. V. Kolobov }, title = { Epitaxial phase-change materials }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 6 }, year = { 2012 }, pages = { 415 } }

TY - JOUR AU - P. Rodenbach AU - R. Calarco AU - K. Perumal AU - F. Katmis AU - M. Hanke AU - A. Proessdorf AU - W. Braun AU - A. Giussani AU - A. Trampert AU - H. Riechert AU - P. Fons AU - A. V. Kolobov TI - Epitaxial phase-change materials JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 6 SP - 415 PY - 2012/01/01

On the epitaxy of germanium telluride thin films on silicon substrates

@article{ author = { A. Giussani and K. Perumal and M. Hanke and P. Rodenbach and H. Riechert and R. Calarco }, title = { On the epitaxy of germanium telluride thin films on silicon substrates }, journal = { Physica Status Solidi B }, volume = { 249 }, year = { 2012 }, pages = { 1939 } }

TY - JOUR AU - A. Giussani AU - K. Perumal AU - M. Hanke AU - P. Rodenbach AU - H. Riechert AU - R. Calarco TI - On the epitaxy of germanium telluride thin films on silicon substrates JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 249 SP - 1939 PY - 2012/01/01

The physical origin of the InSb(111)A surface reconstruction transient

@article{ author = { A. Proessdorf and P. Rodenbach and F. Grosse and M. Hanke and W. Braun and H. Riechert and W. Hu and S. Fujikawa and M. Kozu and M. Takahasi }, title = { The physical origin of the InSb(111)A surface reconstruction transient }, journal = { Surface Science }, volume = { 606 }, year = { 2012 }, pages = { 1458 } }

TY - JOUR AU - A. Proessdorf AU - P. Rodenbach AU - F. Grosse AU - M. Hanke AU - W. Braun AU - H. Riechert AU - W. Hu AU - S. Fujikawa AU - M. Kozu AU - M. Takahasi TI - The physical origin of the InSb(111)A surface reconstruction transient JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 606 SP - 1458 PY - 2012/01/01

Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes

@article{ author = { P. Rodenbach and A. Giussani and K. Perumal and M. Hanke and M. Dubslaff and H. Riechert and R. Calarco and M. Burghammer and A. V. Kolobov and P. Fons }, title = { Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 061903 } }

TY - JOUR AU - P. Rodenbach AU - A. Giussani AU - K. Perumal AU - M. Hanke AU - M. Dubslaff AU - H. Riechert AU - R. Calarco AU - M. Burghammer AU - A. V. Kolobov AU - P. Fons TI - Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 061903 PY - 2012/01/01

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

@article{ author = { J. Lähnemann and O. Brandt and C. Pfüller and T. Flissikowski and U. Jahn and E. Luna and M. Hanke and M. Knelangen and A. Trampert and H.T. Grahn }, title = { Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure }, journal = { Physical Review B: Solid State }, volume = { 84 }, year = { 2011 }, pages = { 155303 } }

TY - JOUR AU - J. Lähnemann AU - O. Brandt AU - C. Pfüller AU - T. Flissikowski AU - U. Jahn AU - E. Luna AU - M. Hanke AU - M. Knelangen AU - A. Trampert AU - H.T. Grahn TI - Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 84 SP - 155303 PY - 2011/10/11

Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface

@article{ author = { M. Hanke and R. Köhler and P. Schäfer and D. Lübbert and I. Häusler and W. Neumann and P. Modregger and T. Boeck and T. Baumbach }, title = { Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 125312 } }

TY - JOUR AU - M. Hanke AU - R. Köhler AU - P. Schäfer AU - D. Lübbert AU - I. Häusler AU - W. Neumann AU - P. Modregger AU - T. Boeck AU - T. Baumbach TI - Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 125312 PY - 2011/01/01

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

@article{ author = { V. Consonni and M. Hanke and M. Knelangen and L. Geelhaar and A. Trampert and H. Riechert }, title = { Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 035310 } }

TY - JOUR AU - V. Consonni AU - M. Hanke AU - M. Knelangen AU - L. Geelhaar AU - A. Trampert AU - H. Riechert TI - Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 035310 PY - 2011/01/01

Diffuse x-ray scattering at low-dimensional nanostructures

@article{ author = { M. Hanke }, title = { Diffuse x-ray scattering at low-dimensional nanostructures }, journal = { Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) }, volume = { }, year = { 2011 }, pages = { 259 } }

TY - JOUR AU - M. Hanke TI - Diffuse x-ray scattering at low-dimensional nanostructures JF - Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) JA - MSN J1 - VL - SP - 259 PY - 2011/01/01

In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

@article{ author = { M. Dubslaff and M. Hanke and M. Burghammer and S. Schöder and R. Hoppe and C. G. Schroer and Yu. I. Mazur and Zh. M. Wang and J. H. Lee and G. J. Salamo }, title = { In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 213105 } }

TY - JOUR AU - M. Dubslaff AU - M. Hanke AU - M. Burghammer AU - S. Schöder AU - R. Hoppe AU - C. G. Schroer AU - Yu. I. Mazur AU - Zh. M. Wang AU - J. H. Lee AU - G. J. Salamo TI - In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 213105 PY - 2011/01/01

Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material

@article{ author = { F. Katmis and R. Calarco and K. Perumal and P. Rodenbach and A. Giussani and M. Hanke and A. Proessdorf and A. Trampert and F. Grosse and R. Shayduk and R. Campion and W. Braun and H. Riechert }, title = { Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4606 } }

TY - JOUR AU - F. Katmis AU - R. Calarco AU - K. Perumal AU - P. Rodenbach AU - A. Giussani AU - M. Hanke AU - A. Proessdorf AU - A. Trampert AU - F. Grosse AU - R. Shayduk AU - R. Campion AU - W. Braun AU - H. Riechert TI - Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4606 PY - 2011/01/01