Dr. Lutz Geelhaar

Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy

@article{ author = { M. Wölz and M. Ramsteiner and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 4053 } }

TY - JOUR AU - M. Wölz AU - M. Ramsteiner AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 4053 PY - 2013/01/01

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy

@article{ author = { C. Somaschini and S. Bietti and A. Trampert and U. Jahn and C. Hauswald and H. Riechert and S. Sanguinetti and L. Geelhaar }, title = { Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 3607 } }

TY - JOUR AU - C. Somaschini AU - S. Bietti AU - A. Trampert AU - U. Jahn AU - C. Hauswald AU - H. Riechert AU - S. Sanguinetti AU - L. Geelhaar TI - Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 3607 PY - 2013/01/01

Luminous efficiency of axial In_xGa_1-xN/GaN nanowire heterostructures: Interplay of polarization and surface potentials

@article{ author = { O. Marquardt and C. Hauswald and M. Wölz and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of axial In_xGa_1-xN/GaN nanowire heterostructures: Interplay of polarization and surface potentials }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 3298 } }

TY - JOUR AU - O. Marquardt AU - C. Hauswald AU - M. Wölz AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of axial In_xGa_1-xN/GaN nanowire heterostructures: Interplay of polarization and surface potentials JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 3298 PY - 2013/01/01

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and K. K. Sabelfeld and T. Gotschke and J. Grandal and E. Calleja and L. Geelhaar and O. Brandt }, title = { Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 3274 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - K. K. Sabelfeld AU - T. Gotschke AU - J. Grandal AU - E. Calleja AU - L. Geelhaar AU - O. Brandt TI - Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 3274 PY - 2013/01/01

Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy

@article{ author = { J. Kamimura and P. Bogdanoff and J. Lähnemann and C. Hauswald and L. Geelhaar and S. Fiechter and H. Riechert }, title = { Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy }, journal = { Journal of the American Chemical Society }, volume = { 135 }, year = { 2013 }, pages = { 10242 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - J. Lähnemann AU - C. Hauswald AU - L. Geelhaar AU - S. Fiechter AU - H. Riechert TI - Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy JF - Journal of the American Chemical Society JA - J. Am. Chem. Soc. J1 - VL - 135 SP - 10242 PY - 2013/01/01

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and T. Gotschke and R. Calarco and L. Geelhaar and H.T. Grahn and O. Brandt }, title = { Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 88 }, year = { 2013 }, pages = { 075312 } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - L. Geelhaar AU - H.T. Grahn AU - O. Brandt TI - Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 88 SP - 075312 PY - 2013/01/01

Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

@article{ author = { M. Ramsteiner and O. Brandt and P. Kusch and S. Breuer and S. Reich and L. Geelhaar }, title = { Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast }, journal = { Applied Physics Letters }, volume = { 103 }, year = { 2013 }, pages = { 043121 } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - P. Kusch AU - S. Breuer AU - S. Reich AU - L. Geelhaar TI - Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 103 SP - 043121 PY - 2013/01/01

Current path in light emitting diodes based on nanowire ensembles

@article{ author = { F. Limbach and C. Hauswald and J. Lähnemann and M. Wölz and O. Brandt and A. Trampert and M. Hanke and U. Jahn and R. Calarco and L. Geelhaar and H. Riechert }, title = { Current path in light emitting diodes based on nanowire ensembles }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 465301 } }

TY - JOUR AU - F. Limbach AU - C. Hauswald AU - J. Lähnemann AU - M. Wölz AU - O. Brandt AU - A. Trampert AU - M. Hanke AU - U. Jahn AU - R. Calarco AU - L. Geelhaar AU - H. Riechert TI - Current path in light emitting diodes based on nanowire ensembles JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 23 SP - 465301 PY - 2012/10/23

Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures

@article{ author = { M. Wölz and J. Lähnemann and O. Brandt and V. M. Kaganer and M. Ramsteiner and C. Pfüller and C. Hauswald and C. N. Huang and L. Geelhaar and H. Riechert }, title = { Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 455203 } }

TY - JOUR AU - M. Wölz AU - J. Lähnemann AU - O. Brandt AU - V. M. Kaganer AU - M. Ramsteiner AU - C. Pfüller AU - C. Hauswald AU - C. N. Huang AU - L. Geelhaar AU - H. Riechert TI - Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 23 SP - 455203 PY - 2012/10/19

Direct experimental determination of the spontaneous polarization of GaN

@article{ author = { J. Lähnemann and O. Brandt and U. Jahn and C. Pfüller and C. Roder and P. Dogan and F. Grosse and A. Belabbes and F. Bechstedt and A. Trampert and L. Geelhaar }, title = { Direct experimental determination of the spontaneous polarization of GaN }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 081302(R) } }

TY - JOUR AU - J. Lähnemann AU - O. Brandt AU - U. Jahn AU - C. Pfüller AU - C. Roder AU - P. Dogan AU - F. Grosse AU - A. Belabbes AU - F. Bechstedt AU - A. Trampert AU - L. Geelhaar TI - Direct experimental determination of the spontaneous polarization of GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 081302(R) PY - 2012/08/09