Dr. Lutz Geelhaar

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

@article{ author = { U. Jahn and J. Lähnemann and C. Pfüller and O. Brandt and S. Breuer and B. Jenichen and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 045323 } }

TY - JOUR AU - U. Jahn AU - J. Lähnemann AU - C. Pfüller AU - O. Brandt AU - S. Breuer AU - B. Jenichen AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 045323 PY - 2012/01/30

Acoustically driven photon antibunching in nanowires

@article{ author = { A. Hernández-Mínguez and M. Möller and S. Breuer and C. Pfüller and C. Somaschini and S. Lazic and O. Brandt and A. Garcia-Cristobal and M. M. de Lima Jr. and A. Cantarero and L. Geelhaar and H. Riechert and P. V. Santos }, title = { Acoustically driven photon antibunching in nanowires }, journal = { Nano Letters }, volume = { 12 }, year = { 2012 }, pages = { 252 } }

TY - JOUR AU - A. Hernández-Mínguez AU - M. Möller AU - S. Breuer AU - C. Pfüller AU - C. Somaschini AU - S. Lazic AU - O. Brandt AU - A. Garcia-Cristobal AU - M. M. de Lima Jr. AU - A. Cantarero AU - L. Geelhaar AU - H. Riechert AU - P. V. Santos TI - Acoustically driven photon antibunching in nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 12 SP - 252 PY - 2012/01/01

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt and S. Fernández-Garrido and P. Dogan and L. Geelhaar and H. Riechert }, title = { Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 115325 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt AU - S. Fernández-Garrido AU - P. Dogan AU - L. Geelhaar AU - H. Riechert TI - Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 115325 PY - 2012/01/01

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

@article{ author = { A. Davydok and S. Breuer and A. Biermanns and L. Geelhaar and U. Pietsch }, title = { Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 109 } }

TY - JOUR AU - A. Davydok AU - S. Breuer AU - A. Biermanns AU - L. Geelhaar AU - U. Pietsch TI - Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 109 PY - 2012/01/01

Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction

@article{ author = { A. Biermanns and S. Breuer and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction }, journal = { Journal of Applied Crystallography }, volume = { 45 }, year = { 2012 }, pages = { 239 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire x-ray diffraction JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 45 SP - 239 PY - 2012/01/01

Quantitative description for the growth rate of self-induced GaN nanowires

@article{ author = { V. Consonni and V. G. Dubrovskii and A. Trampert and L. Geelhaar and H. Riechert }, title = { Quantitative description for the growth rate of self-induced GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 155313 } }

TY - JOUR AU - V. Consonni AU - V. G. Dubrovskii AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Quantitative description for the growth rate of self-induced GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 155313 PY - 2012/01/01

The influence of Mg doping on the nucleation of self-induced GaN nanowires

@article{ author = { F. Limbach and R. Caterino and T. Gotschke and T. Stoica and R. Calarco and L. Geelhaar and H. Riechert }, title = { The influence of Mg doping on the nucleation of self-induced GaN nanowires }, journal = { AIP Advances }, volume = { 2 }, year = { 2012 }, pages = { 012157 } }

TY - JOUR AU - F. Limbach AU - R. Caterino AU - T. Gotschke AU - T. Stoica AU - R. Calarco AU - L. Geelhaar AU - H. Riechert TI - The influence of Mg doping on the nucleation of self-induced GaN nanowires JF - AIP Advances JA - AIP Adv. J1 - VL - 2 SP - 012157 PY - 2012/01/01

Scaling growth kinetics of self-induced GaN nanowires

@article{ author = { V. G. Dubrovskii and V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Scaling growth kinetics of self-induced GaN nanowires }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 153101 } }

TY - JOUR AU - V. G. Dubrovskii AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Scaling growth kinetics of self-induced GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 153101 PY - 2012/01/01

Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy

@article{ author = { P. Dogan and O. Brandt and C. Hauswald and R. Calarco and A. Trampert and L. Geelhaar and H. Riechert }, title = { Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy }, journal = { Proceedings of SPIE }, volume = { 8262 }, year = { 2012 }, pages = { 82620P } }

TY - JOUR AU - P. Dogan AU - O. Brandt AU - C. Hauswald AU - R. Calarco AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8262 SP - 82620P PY - 2012/01/01

Polarized recombination of acoustically transported carriers in GaAs nanowires

@article{ author = { M. Möller and A. Hernández-Mínguez and S. Breuer and C. Pfüller and O. Brandt and M. M. de Lima Jr. and A. Cantarero and L. Geelhaar and H. Riechert and P. V. Santos }, title = { Polarized recombination of acoustically transported carriers in GaAs nanowires }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 247 } }

TY - JOUR AU - M. Möller AU - A. Hernández-Mínguez AU - S. Breuer AU - C. Pfüller AU - O. Brandt AU - M. M. de Lima Jr. AU - A. Cantarero AU - L. Geelhaar AU - H. Riechert AU - P. V. Santos TI - Polarized recombination of acoustically transported carriers in GaAs nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 247 PY - 2012/01/01