Dr. Lutz Geelhaar

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111)

@article{ author = { A. Biermanns and S. Breuer and A. Trampert and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111) }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 305703 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Trampert AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111) JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 23 SP - 305703 PY - 2012/01/01

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

@article{ author = { A. Gorgis and T. Flissikowski and O. Brandt and C. Chèze and L. Geelhaar and H. Riechert and H.T. Grahn }, title = { Time-resolved photoluminescence spectroscopy of individual GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 041302(R) } }

TY - JOUR AU - A. Gorgis AU - T. Flissikowski AU - O. Brandt AU - C. Chèze AU - L. Geelhaar AU - H. Riechert AU - H.T. Grahn TI - Time-resolved photoluminescence spectroscopy of individual GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 041302(R) PY - 2012/01/01

Efficient room-temperature spin detector based on GaNAs

@article{ author = { Y. Puttisong and I. A. Buyanova and L. Geelhaar and H. Riechert and C. W. Tu and W. M. Chen }, title = { Efficient room-temperature spin detector based on GaNAs }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 07C303 } }

TY - JOUR AU - Y. Puttisong AU - I. A. Buyanova AU - L. Geelhaar AU - H. Riechert AU - C. W. Tu AU - W. M. Chen TI - Efficient room-temperature spin detector based on GaNAs JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 07C303 PY - 2012/01/01

Scaling thermodynamic model for the self-induced formation of GaN nanowires

@article{ author = { V. G. Dubrovskii and V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Scaling thermodynamic model for the self-induced formation of GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 165317 } }

TY - JOUR AU - V. G. Dubrovskii AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Scaling thermodynamic model for the self-induced formation of GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 165317 PY - 2012/01/01

Band gap of wurtzite GaAs: A resonant Raman study

@article{ author = { P. Kusch and S. Breuer and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Band gap of wurtzite GaAs: A resonant Raman study }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 075317 } }

TY - JOUR AU - P. Kusch AU - S. Breuer AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Band gap of wurtzite GaAs: A resonant Raman study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 075317 PY - 2012/01/01

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

@article{ author = { C. Pfüller and M. Ramsteiner and O. Brandt and F. Grosse and A. Rathsfeld and G. Schmidt and L. Geelhaar and H. Riechert }, title = { Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 083104 } }

TY - JOUR AU - C. Pfüller AU - M. Ramsteiner AU - O. Brandt AU - F. Grosse AU - A. Rathsfeld AU - G. Schmidt AU - L. Geelhaar AU - H. Riechert TI - Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 083104 PY - 2012/01/01

Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity

@article{ author = { S. Fernández-Garrido and X. Kong and T. Gotschke and R. Calarco and L. Geelhaar and A. Trampert and O. Brandt }, title = { Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity }, journal = { Nano Letters }, volume = { 12 }, year = { 2012 }, pages = { 6119 } }

TY - JOUR AU - S. Fernández-Garrido AU - X. Kong AU - T. Gotschke AU - R. Calarco AU - L. Geelhaar AU - A. Trampert AU - O. Brandt TI - Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity JF - Nano Letters JA - Nano Lett. J1 - VL - 12 SP - 6119 PY - 2012/01/01

Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

@article{ author = { M. Wölz and S. Fernández-Garrido and C. Hauswald and O. Brandt and F. Limbach and L. Geelhaar and H. Riechert }, title = { Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry }, journal = { Crystal Growth & Design }, volume = { 12 }, year = { 2012 }, pages = { 5686 } }

TY - JOUR AU - M. Wölz AU - S. Fernández-Garrido AU - C. Hauswald AU - O. Brandt AU - F. Limbach AU - L. Geelhaar AU - H. Riechert TI - Indium incorporation in In_xGa_1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 12 SP - 5686 PY - 2012/01/01

Shell-doping of GaAs nanowires with Si for n-type conductivity

@article{ author = { E. Dimakis and M. Ramsteiner and A. Tahraoui and H. Riechert and L. Geelhaar }, title = { Shell-doping of GaAs nanowires with Si for n-type conductivity }, journal = { Nano Research }, volume = { 5 }, year = { 2012 }, pages = { 796 } }

TY - JOUR AU - E. Dimakis AU - M. Ramsteiner AU - A. Tahraoui AU - H. Riechert AU - L. Geelhaar TI - Shell-doping of GaAs nanowires with Si for n-type conductivity JF - Nano Research JA - Nano Res. J1 - VL - 5 SP - 796 PY - 2012/01/01

Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

@article{ author = { M. Wölz and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)] }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 179902 } }

TY - JOUR AU - M. Wölz AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Erratum: “Analyzing the growth of In_xGa_1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)] JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 179902 PY - 2012/01/01