Dr. Lutz Geelhaar

Nitride nanowire structures for LED applications

@article{ author = { H. Riechert and O. Brandt and C. Chèze and V. Consonni and M. Knelangen and J. Lähnemann and F. Limbach and C. Pfüller and A. Trampert and M. Wölz and L. Geelhaar }, title = { Nitride nanowire structures for LED applications }, journal = { Proceedings of SPIE }, volume = { 7954 }, year = { 2011 }, pages = { 79540S } }

TY - JOUR AU - H. Riechert AU - O. Brandt AU - C. Chèze AU - V. Consonni AU - M. Knelangen AU - J. Lähnemann AU - F. Limbach AU - C. Pfüller AU - A. Trampert AU - M. Wölz AU - L. Geelhaar TI - Nitride nanowire structures for LED applications JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 7954 SP - 79540S PY - 2011/01/01

Applicability of molecular beam deposition for the growth of high-k oxides

@article{ author = { M. Grube and D. Martin and W. M. Weber and T. Mikolajick and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides }, journal = { Journal of Vacuum Science and Technology B }, volume = { 29 }, year = { 2011 }, pages = { 01AC05 } }

TY - JOUR AU - M. Grube AU - D. Martin AU - W. M. Weber AU - T. Mikolajick AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 29 SP - 01AC05 PY - 2011/01/01

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

@article{ author = { A. Biermanns and S. Breuer and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Structural evolution of self-assisted GaAs nanowires grown on Si(111) }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 5 }, year = { 2011 }, pages = { 156 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Structural evolution of self-assisted GaAs nanowires grown on Si(111) JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 5 SP - 156 PY - 2011/01/01

Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

@article{ author = { M. Wölz and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 261907 } }

TY - JOUR AU - M. Wölz AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 261907 PY - 2011/01/01

X-ray diffraction profiles from axial nanowire heterostructures

@article{ author = { V. M. Kaganer and M. Wölz and O. Brandt and L. Geelhaar and H. Riechert }, title = { X-ray diffraction profiles from axial nanowire heterostructures }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 245321 } }

TY - JOUR AU - V. M. Kaganer AU - M. Wölz AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - X-ray diffraction profiles from axial nanowire heterostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 245321 PY - 2011/01/01

Surface-induced effects in GaN nanowires

@article{ author = { R. Calarco and T. Stoica and O. Brandt and L. Geelhaar }, title = { Surface-induced effects in GaN nanowires }, journal = { Journal of Materials Research }, volume = { 26 }, year = { 2011 }, pages = { 2157 } }

TY - JOUR AU - R. Calarco AU - T. Stoica AU - O. Brandt AU - L. Geelhaar TI - Surface-induced effects in GaN nanowires JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 26 SP - 2157 PY - 2011/01/01

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope

@article{ author = { H. Amari and L. Lari and H. Y. Zhang and L. Geelhaar and C. Chèze and M. J. Kappers and C. McAleese and C. J. Humphreys and T. Walther }, title = { Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope }, journal = { Journal of Physics: Conference Series }, volume = { 326 }, year = { 2011 }, pages = { 012028 } }

TY - JOUR AU - H. Amari AU - L. Lari AU - H. Y. Zhang AU - L. Geelhaar AU - C. Chèze AU - M. J. Kappers AU - C. McAleese AU - C. J. Humphreys AU - T. Walther TI - Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 326 SP - 012028 PY - 2011/01/01

Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

@article{ author = { H. Amari and H. Y. Zhang and L. Geelhaar and C. Chèze and M. J. Kappers and T. Walther }, title = { Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers }, journal = { Journal of Physics: Conference Series }, volume = { 326 }, year = { 2011 }, pages = { 012039 } }

TY - JOUR AU - H. Amari AU - H. Y. Zhang AU - L. Geelhaar AU - C. Chèze AU - M. J. Kappers AU - T. Walther TI - Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 326 SP - 012039 PY - 2011/01/01

Physical origin of the incubation time of self-induced GaN nanowires

@article{ author = { V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Physical origin of the incubation time of self-induced GaN nanowires }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 033102 } }

TY - JOUR AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Physical origin of the incubation time of self-induced GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 033102 PY - 2011/01/01

Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111)

@article{ author = { E. Dimakis and J. Lähnemann and U. Jahn and S. Breuer and M. Hilse and L. Geelhaar and H. Riechert }, title = { Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111) }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4001 } }

TY - JOUR AU - E. Dimakis AU - J. Lähnemann AU - U. Jahn AU - S. Breuer AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111) JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4001 PY - 2011/01/01