Dr. Lutz Geelhaar

In situ investigation of self-induced GaN nanowire nucleation on Si

@article{ author = { C. Chèze and L. Geelhaar and A. Trampert and H. Riechert }, title = { <em>In situ</em> investigation of self-induced GaN nanowire nucleation on Si }, journal = { Applied Physics Letters }, volume = { 97 }, year = { 2010 }, pages = { 043101 } }

TY - JOUR AU - C. Chèze AU - L. Geelhaar AU - A. Trampert AU - H. Riechert TI - <em>In situ</em> investigation of self-induced GaN nanowire nucleation on Si JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 97 SP - 043101 PY - 2010/01/01

Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires

@article{ author = { C. Chèze and L. Geelhaar and A. Trampert and O. Brandt and H. Riechert }, title = { Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires }, journal = { Nano Letters }, volume = { 10 }, year = { 2010 }, pages = { 3426 } }

TY - JOUR AU - C. Chèze AU - L. Geelhaar AU - A. Trampert AU - O. Brandt AU - H. Riechert TI - Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 10 SP - 3426 PY - 2010/01/01

Direct measurement and analysis of the conduction band density of states in diluted GaAsN alloys

@article{ author = { L. Ivanova and H. Eisele and M.P. Vaughan and Ph. Ebert and A. Lenz and R. Timm and O. Schumann and L. Geelhaar and M. Dähne and S. Fahy and H. Riechert and E. P. O'Reilly }, title = { Direct measurement and analysis of the conduction band density of states in diluted GaAsN alloys }, journal = { Physical Review B: Solid State }, volume = { 82 }, year = { 2010 }, pages = { 161201(R) } }

TY - JOUR AU - L. Ivanova AU - H. Eisele AU - M.P. Vaughan AU - Ph. Ebert AU - A. Lenz AU - R. Timm AU - O. Schumann AU - L. Geelhaar AU - M. Dähne AU - S. Fahy AU - H. Riechert AU - E. P. O'Reilly TI - Direct measurement and analysis of the conduction band density of states in diluted GaAsN alloys JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 82 SP - 161201(R) PY - 2010/01/01

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit

@article{ author = { C. Pfüller and O. Brandt and T. Flissikowski and C. Chèze and L. Geelhaar and H.T. Grahn and H. Riechert }, title = { Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit }, journal = { Nano Research }, volume = { 3 }, year = { 2010 }, pages = { 881 } }

TY - JOUR AU - C. Pfüller AU - O. Brandt AU - T. Flissikowski AU - C. Chèze AU - L. Geelhaar AU - H.T. Grahn AU - H. Riechert TI - Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit JF - Nano Research JA - Nano Res. J1 - VL - 3 SP - 881 PY - 2010/01/01

Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires

@article{ author = { S. Breuer and M. Hilse and A. Trampert and L. Geelhaar and H. Riechert }, title = { Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires }, journal = { Physical Review B: Solid State }, volume = { 82 }, year = { 2010 }, pages = { 075406 } }

TY - JOUR AU - S. Breuer AU - M. Hilse AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 82 SP - 075406 PY - 2010/01/01

Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy

@article{ author = { M. Hilse and Y. Takagaki and J. Herfort and M. Ramsteiner and C. Herrmann and S. Breuer and L. Geelhaar and H. Riechert }, title = { Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 133126 } }

TY - JOUR AU - M. Hilse AU - Y. Takagaki AU - J. Herfort AU - M. Ramsteiner AU - C. Herrmann AU - S. Breuer AU - L. Geelhaar AU - H. Riechert TI - Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 133126 PY - 2009/01/01

Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films

@article{ author = { D. Martin and M. Grube and W. M. Weber and J. Rüstig and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 142906 } }

TY - JOUR AU - D. Martin AU - M. Grube AU - W. M. Weber AU - J. Rüstig AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 142906 PY - 2009/01/01

Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials

@article{ author = { X. J. Wang and Y. Puttisong and C. W. Tu and A. J. Ptak and V. K. Kalevich and A. Yu. Egorov and L. Geelhaar and H. Riechert and W. M. Chen and I. A. Buyanova }, title = { Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 241904 } }

TY - JOUR AU - X. J. Wang AU - Y. Puttisong AU - C. W. Tu AU - A. J. Ptak AU - V. K. Kalevich AU - A. Yu. Egorov AU - L. Geelhaar AU - H. Riechert AU - W. M. Chen AU - I. A. Buyanova TI - Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 241904 PY - 2009/01/01

Effects of nanowire coalescence on their structural and optical properties on a local scale

@article{ author = { V. Consonni and M. Knelangen and U. Jahn and A. Trampert and L. Geelhaar and H. Riechert }, title = { Effects of nanowire coalescence on their structural and optical properties on a local scale }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 241910 } }

TY - JOUR AU - V. Consonni AU - M. Knelangen AU - U. Jahn AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Effects of nanowire coalescence on their structural and optical properties on a local scale JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 241910 PY - 2009/01/01