Dr. Oliver Bierwagen

Effect of heavy Ga doping on defect structure of SnO₂ layers

@article{ author = { A. Mogilatenko and H. Kirmse and O. Bierwagen and M. Schmidbauer and M.-Y. Tsai and I. Häusler and M. E. White and J. S. Speck }, title = { Effect of heavy Ga doping on defect structure of SnO₂ layers }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 87 } }

TY - JOUR AU - A. Mogilatenko AU - H. Kirmse AU - O. Bierwagen AU - M. Schmidbauer AU - M.-Y. Tsai AU - I. Häusler AU - M. E. White AU - J. S. Speck TI - Effect of heavy Ga doping on defect structure of SnO₂ layers JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 87 PY - 2014/01/21

Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation

@article{ author = { O. Bierwagen and J. S. Speck }, title = { Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 48 } }

TY - JOUR AU - O. Bierwagen AU - J. S. Speck TI - Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 48 PY - 2014/01/20

Preface: Emerging Oxide Semiconductors

@article{ author = { O. Bierwagen and S.F. Fischer }, title = { Preface: Emerging Oxide Semiconductors }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 19 } }

TY - JOUR AU - O. Bierwagen AU - S.F. Fischer TI - Preface: Emerging Oxide Semiconductors JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 19 PY - 2014/01/01

MBE of transparent semiconducting oxides

@article{ author = { O. Bierwagen and M. E. White and M.-Y. Tsai and J. S. Speck }, title = { MBE of transparent semiconducting oxides }, journal = { Molecular Beam Epitaxy: From Research to Mass Production; edited by M. Henini (Elsevier science and technology, 2012) }, volume = { }, year = { 2013 }, pages = { 347 } }

TY - JOUR AU - O. Bierwagen AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck TI - MBE of transparent semiconducting oxides JF - Molecular Beam Epitaxy: From Research to Mass Production; edited by M. Henini (Elsevier science and technology, 2012) JA - MBE: From Research to Mass Production J1 - VL - SP - 347 PY - 2013/01/01

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films

@article{ author = { N. Preissler and O. Bierwagen and A. T. Ramu and J. S. Speck }, title = { Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films }, journal = { Physical Review B: Solid State }, volume = { 88 }, year = { 2013 }, pages = { 085305 } }

TY - JOUR AU - N. Preissler AU - O. Bierwagen AU - A. T. Ramu AU - J. S. Speck TI - Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 88 SP - 085305 PY - 2013/01/01

Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon

@article{ author = { O. Bierwagen and A. Proessdorf and M. Niehle and F. Grosse and A. Trampert and M. Klingsporn }, title = { Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon }, journal = { Crystal Growth & Design }, volume = { 13 }, year = { 2013 }, pages = { 3645 } }

TY - JOUR AU - O. Bierwagen AU - A. Proessdorf AU - M. Niehle AU - F. Grosse AU - A. Trampert AU - M. Klingsporn TI - Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 13 SP - 3645 PY - 2013/01/01

Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by in vivo x-ray diffraction

@article{ author = { M. Hanke and V. M. Kaganer and O. Bierwagen and M. Niehle and A. Trampert }, title = { Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 203 } }

TY - JOUR AU - M. Hanke AU - V. M. Kaganer AU - O. Bierwagen AU - M. Niehle AU - A. Trampert TI - Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 203 PY - 2012/01/01

Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films

@article{ author = { C. A. Hurni and S. J. Choi and O. Bierwagen and J. S. Speck }, title = { Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 082106 } }

TY - JOUR AU - C. A. Hurni AU - S. J. Choi AU - O. Bierwagen AU - J. S. Speck TI - Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 082106 PY - 2012/01/01

Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface

@article{ author = { O. Bierwagen and T. Nagata and M. E. White and M.-Y. Tsai and J. S. Speck }, title = { Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface }, journal = { Journal of Materials Research }, volume = { 27 }, year = { 2012 }, pages = { 2232 } }

TY - JOUR AU - O. Bierwagen AU - T. Nagata AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck TI - Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 27 SP - 2232 PY - 2012/01/01

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and A. M. Sanchez and O. Bierwagen and M. E. White and S. Gorfman and P. A. Thomas and J. S. Speck and C. F. McConville }, title = { Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 245315 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - A. M. Sanchez AU - O. Bierwagen AU - M. E. White AU - S. Gorfman AU - P. A. Thomas AU - J. S. Speck AU - C. F. McConville TI - Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 245315 PY - 2012/01/01