Senior Scientist
phone: +49 30 20377 486
room: 0520
email: kaganer@pdi-berlin.de
Department: Microstructure
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
1 | Author | V. M. Kaganer , O. V. Konovalov , S. Fernández-Garrido |
Title |
Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law |
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Source | Acta Cryst. A , Acta Crystallographica A , 42 ( 2021 ) | |
DOI : 10.1107/S205327332001548X | Cite : Bibtex RIS |
2 | Author | G. Calabrese , D. van Treeck , V. M. Kaganer , O. Konovalov , P. Corfdir , C. Sinito , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Title |
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires |
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Source | Acta Mat. , 195 , 87 ( 2020 ) | |
DOI : 10.1016/j.actamat.2020.04.045 | Cite : Bibtex RIS |
3 | Author | V. M. Kaganer , I. Petrov , L. Samoylova |
Title |
X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses |
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Source | Acta Cryst. A , 76 , 55 ( 2019 ) | |
DOI : 10.1107/S2053273319014347 | Cite : Bibtex RIS |
4 | Author | V. M. Kaganer , J. Lähnemann , C. Pfüller , K. K. Sabelfeld , A. E. Kireeva , O. Brandt |
Title |
Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities |
|
Source | Phys. Rev. Appl. , 12 , 054038 ( 2019 ) | |
DOI : 10.1103/PhysRevApplied.12.054038 | Download arXiv: 1906.05645 | Cite : Bibtex RIS |
5 | Author | L. Samoylova , U. Boesenberg , A. Chumakov , V. M. Kaganer , I. Petrov , T. Roth , R. Rüffer , H. Sinn , S. Terentyev , A. Madsen |
Title |
Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses |
|
Source | J. Synchrotron Rad. , 26 , 1069 ( 2019 ) | |
DOI : 10.1107/S1600577519004880 | Download: PDF | Cite : Bibtex RIS |
6 | Author | V. M. Kaganer , K. K. Sabelfeld , O. Brandt |
Title |
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} |
|
Source | Appl. Phys. Lett. , 112 , 122101 ( 2018 ) | |
DOI : 10.1063/1.5022170 | Download: PDF | Cite : Bibtex RIS |
7 | Author | D. van Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar |
Title |
Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films |
|
Source | Nano Res. , 11, Issue 1 , 565 ( 2018 ) | |
DOI : 10.1007/s12274-017-1717-x | Cite : Bibtex RIS |
8 | Author | O. Marquardt , V. M. Kaganer , P. Corfdir |
Title |
Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation |
|
Source | Taylor and Francis Books , I , 397 ( 2017 ) | |
DOI : ISBN-13: 978-1-4987-4946-6 | Cite : Bibtex RIS |
9 | Author | V. M. Kaganer , T. Ulyanenkova , A. Benediktovitch , M. myronov , A. Ulyanenkov |
Title |
Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction |
|
Source | J. Appl. Phys. , 122 , 105302 ( 2017 ) | |
DOI : 10.1063/1.4990135 | Download: PDF | Cite : Bibtex RIS |
10 | Author | K. K. Sabelfeld , V. M. Kaganer , C. Pfüller , O. Brandt |
Title |
Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) |
|
Source | J. Phys. D: Appl. Phys. , 50 , 405101 ( 2017 ) | |
DOI : 10.1088/1361-6463/aa85c8 | Download arXiv: 1611.06895 | Cite : Bibtex RIS |