PDI -> Staff ->

Dr. Vladimir Kaganer

Senior Scientist

Project Leader

Vladimir Kaganer

phone: +49 30 20377 486

room: 0520

email: kaganer@pdi-berlin.de

 

Department: Microstructure

Core research areas: Nanoanalytics , III-V nanowires for optoelectronics

 

 

1 Author V. M. Kaganer , I. Petrov , L. Samoylova
Title

X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses

Source Acta Cryst. A , 76 , 55 ( 2019 )
DOI : 10.1107/S2053273319014347 | 3095 Cite : Bibtex RIS
V. M. Kaganer, I. Petrov, and L. Samoylova

2 Author V. M. Kaganer , J. Lähnemann , C. Pfüller , K. Sabelfeld , A. Kireeva , O. Brandt
Title

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

Source Phys. Rev. Applied , 12 , 054038 ( 2019 )
DOI : 10.1103/PhysRevApplied.12.054038 | Download arXiv: 1906.05645 | 3104 Cite : Bibtex RIS
V. M. Kaganer, J. Lähnemann, C. Pfüller, K. Sabelfeld, A. Kireeva, and O. Brandt

3 Author L. Samoylova , U. Boesenberg , A. Chumakov , V. M. Kaganer , I. Petrov , T. Roth , R. Rüffer , H. Sinn , S. Terentyev , A. Madsen
Title

Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses

Source J. Synchrotron Rad. , 26 , 1069 ( 2019 )
DOI : 10.1107/S1600577519004880 | Download: PDF | 3144 Cite : Bibtex RIS
L. Samoylova, U. Boesenberg, A. Chumakov, V. M. Kaganer, I. Petrov, T. Roth, R. Rüffer, H. Sinn, S. Terentyev, and A. Madsen

4 Author V. M. Kaganer , K. K. Sabelfeld , O. Brandt
Title

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Source Appl. Phys. Lett. , 112 , 122101 ( 2018 )
DOI : 10.1063/1.5022170 | Download: PDF | 3003 Cite : Bibtex RIS
V. M. Kaganer, K. K. Sabelfeld, and O. Brandt

5 Author D. v. Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar
Title

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

Source Nano Res. , 11, Issue 1 , 565 ( 2018 )
DOI : 10.1007/s12274-017-1717-x | 2901 Cite : Bibtex RIS
D. v. Treeck, G. Calabrese, J. Goertz, V. M. Kaganer, O. Brandt, S. Fernández-Garrido, and L. Geelhaar

6 Author O. Marquardt , V. M. Kaganer , P. Corfdir
Title

Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation

Source Taylor and Francis Books , I , 397 ( 2017 )
DOI : ISBN-13: 978-1-4987-4946-6 | 2792 Cite : Bibtex RIS
O. Marquardt, V. M. Kaganer, and P. Corfdir

7 Author V. M. Kaganer , T. Ulyanenkova , A. Benediktovitch , M. myronov , A. Ulyanenkov
Title

Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Source J. Appl. Phys. , 122 , 105302 ( 2017 )
DOI : 10.1063/1.4990135 | Download: PDF | 2938 Cite : Bibtex RIS
V. M. Kaganer, T. Ulyanenkova, A. Benediktovitch, M. myronov, and A. Ulyanenkov

8 Author K. K. Sabelfeld , V. M. Kaganer , C. Pfüller , O. Brandt
Title

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)

Source J. Phys. D , 50 , 405101 ( 2017 )
DOI : 10.1088/1361-6463/aa85c8 | Download arXiv: 1611.06895 | 2886 Cite : Bibtex RIS
K. K. Sabelfeld, V. M. Kaganer, C. Pfüller, and O. Brandt

9 Author F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt
Title

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

Source Phys. Rev. Applied , 8 , 014032 ( 2017 )
DOI : 10.1103/PhysRevApplied.8.014032 | Download arXiv: 1703.06715 | 2905 Cite : Bibtex RIS
F. Feix, T. Flissikowski, K. K. Sabelfeld, V. M. Kaganer, M. Wölz, L. Geelhaar, H. T. Grahn, and O. Brandt

10 Author O. Marquardt , T. Krause , V. M. Kaganer , J. Martin-Sanchez , M. Hanke , O. Brandt
Title

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

Source Nanotechnol. , 28 , 215204 ( 2017 )
DOI : 10.1088/1361-6528/aa6b73 | Download arXiv: 1608.07047 | 2857 Cite : Bibtex RIS
O. Marquardt, T. Krause, V. M. Kaganer, J. Martin-Sanchez, M. Hanke, and O. Brandt