Dr. Michael Hanke

Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

@article{ author = { A. Al Hassan and R. B. Lewis and H. Küpers and W. H. Lin and D. Bahrami and T. Krause and D. Salomon and A. Tahraoui and M. Hanke and L. Geelhaar and U. Pietsch }, title = { Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 014604 } }

TY - JOUR AU - A. Al Hassan AU - R. B. Lewis AU - H. Küpers AU - W. H. Lin AU - D. Bahrami AU - T. Krause AU - D. Salomon AU - A. Tahraoui AU - M. Hanke AU - L. Geelhaar AU - U. Pietsch TI - Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 014604 PY - 2018/01/19

Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and J. Schwarzkopf }, title = { Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 015701 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - J. Schwarzkopf TI - Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 29 SP - 015701 PY - 2018/01/01

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers

@article{ author = { J. Schwarzkopf and D. Braun and M. Hanke and R. Uecker and M. Schmidbauer }, title = { Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers }, journal = { Frontiers in Materials }, volume = { 4:26 }, year = { 2017 }, pages = { 1 } }

TY - JOUR AU - J. Schwarzkopf AU - D. Braun AU - M. Hanke AU - R. Uecker AU - M. Schmidbauer TI - Strain Engineering of Ferroelectric Domains in KxNa1-xNbO3 Epitaxial Layers JF - Frontiers in Materials JA - Front. Mater. J1 - VL - 4:26 SP - 1 PY - 2017/08/16

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

@article{ author = { J. Bartolomé and M. Hanke and D. v. Treeck and A. Trampert }, title = { Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4654 } }

TY - JOUR AU - J. Bartolomé AU - M. Hanke AU - D. v. Treeck AU - A. Trampert TI - Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4654 PY - 2017/07/22

Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and A. Kwasniewski and J. Schwarzkopf }, title = { Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 232903 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - A. Kwasniewski AU - J. Schwarzkopf TI - Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 232903 PY - 2017/06/09

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

@article{ author = { A. Davtyan and T. Krause and D. Kriegner and A. Al-Hassan and D. Bahrami and S. M. M. Kashani and R. B. Lewis and H. Küpers and A. Tahraoui and L. Geelhaar and M. Hanke and S. J. Leake and O. Loffeld and U. Pietsch }, title = { Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging }, journal = { Journal of Applied Crystallography }, volume = { 50 }, year = { 2017 }, pages = { 673 } }

TY - JOUR AU - A. Davtyan AU - T. Krause AU - D. Kriegner AU - A. Al-Hassan AU - D. Bahrami AU - S. M. M. Kashani AU - R. B. Lewis AU - H. Küpers AU - A. Tahraoui AU - L. Geelhaar AU - M. Hanke AU - S. J. Leake AU - O. Loffeld AU - U. Pietsch TI - Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 50 SP - 673 PY - 2017/06/01

Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties

@article{ author = { M. Schmidbauer and D. Braun and T. Markurt and M. Hanke and J. Schwarzkopf }, title = { Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 24LT02 } }

TY - JOUR AU - M. Schmidbauer AU - D. Braun AU - T. Markurt AU - M. Hanke AU - J. Schwarzkopf TI - Strain engineering of monoclinic domains in KxNa1−xNbO3 epitaxial layers: a pathway to enhanced piezoelectric properties JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 28 SP - 24LT02 PY - 2017/05/23

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

@article{ author = { O. Marquardt and T. Krause and V. M. Kaganer and J. Martin-Sanchez and M. Hanke and O. Brandt }, title = { Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 215204 } }

TY - JOUR AU - O. Marquardt AU - T. Krause AU - V. M. Kaganer AU - J. Martin-Sanchez AU - M. Hanke AU - O. Brandt TI - Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 28 SP - 215204 PY - 2017/05/04

Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3

@article{ author = { M. Schmidbauer and M. Hanke and A. Kwasniewski and D. Braun and L. von Helden and C. Feldt and S. J. Leake and J. Schwarzkopf }, title = { Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 }, journal = { Journal of Applied Crystallography }, volume = { 50 }, year = { 2017 }, pages = { 519 } }

TY - JOUR AU - M. Schmidbauer AU - M. Hanke AU - A. Kwasniewski AU - D. Braun AU - L. von Helden AU - C. Feldt AU - S. J. Leake AU - J. Schwarzkopf TI - Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 50 SP - 519 PY - 2017/03/30