PDI -> Staff ->

Dr. Michael Hanke

Senior Scientist

Project Leader

Michael Hanke

phone: +49 30 20377 287

room: 0616

email: hanke@pdi-berlin.de

 

Department: Microstructure

Core research areas: Nanoanalytics , Nanofabrication

 

 

31 Author T. Krause , M. Hanke , O. Brandt , A. Trampert
Title

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Source Appl. Phys. Lett. , 108 , 032103 ( 2016 )
DOI : 10.1063/1.4940053 | Download: PDF | 2763 Cite : Bibtex RIS
T. Krause, M. Hanke, O. Brandt, and A. Trampert

32 Author F.Willems , C.T.L.Smeenk , N.Zhavoronkov , O.Kornilov , I.Radu , M.Schmidbauer , M. Hanke , C.von Korff-Schmising , M.J.J.Vrakking , S.Eisebitt
Title

Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy

Source Phys. Rev. B , 92 , 220405 ( 2015 )
DOI : 10.1103/PhysRevB.92.220405 | Download: PDF | 2778 Cite : Bibtex RIS
F.Willems, C.T.L.Smeenk, N.Zhavoronkov, O.Kornilov, I.Radu, M.Schmidbauer, M. Hanke, C.von Korff-Schmising, M.J.J.Vrakking, and S.Eisebitt

33 Author M. Wu , M. Hanke , E. Luna , J. Puustinen , M. Guina , A. Trampert
Title

Detecting lateral composition modulation in dilute GaAsBi epilayers

Source Nanotechnol. , 26 , 425701 ( 2015 )
DOI : 10.1088/0957-4484/26/42/425701 | 2710 Cite : Bibtex RIS
M. Wu, M. Hanke, E. Luna, J. Puustinen, M. Guina, and A. Trampert

34 Author T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert
Title

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

Source J. Cryst. Growth , 425 , 274 ( 2015 )
DOI : 10.1016/j.jcrysgro.2015.02.060 | 2670 Cite : Bibtex RIS
T. Schumann, J. M. J. Lopes, J. M. Wofford, M.H. Oliveira Jr., M. Dubslaff, M. Hanke, U. Jahn, L. Geelhaar, and H. Riechert

35 Author S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner , M. Hanke , J. M. J. Lopes , H. Riechert
Title

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Source Appl. Phys. Lett. , 106 , 213108 ( 2015 )
DOI : 10.1063/1.4921921 | Download: PDF | 2696 Cite : Bibtex RIS
S. Nakhaie, J. M. Wofford, T. Schumann, U. Jahn, M. Ramsteiner, M. Hanke, J. M. J. Lopes, and H. Riechert

36 Author P. Fons , P. Rodenbach , K. V. Mitrofanov , A. V. Kolobov , J. Tominaga , R. Shayduck , A. Giussani , R. Calarco , M. Hanke , H. Riechert , R.E. Simpson , M. Hase
Title

Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction

Source Phys. Rev. B , 90 , 094305 ( 2014 )
DOI : 10.1103/PhysRevB.90.094305 | Download: PDF | 2621 Cite : Bibtex RIS
P. Fons, P. Rodenbach, K. V. Mitrofanov, A. V. Kolobov, J. Tominaga, R. Shayduck, A. Giussani, R. Calarco, M. Hanke, H. Riechert, R.E. Simpson, and M. Hase

37 Author J. Grandal , M. Wu , X. Kong , M. Hanke , E. Dimakis , L. Geelhaar , H. Riechert , A. Trampert
Title

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

Source Appl. Phys. Lett. , 105 , 121602 ( 2014 )
DOI : 10.1063/1.4896505 | Download: PDF | 2596 Cite : Bibtex RIS
J. Grandal, M. Wu, X. Kong, M. Hanke, E. Dimakis, L. Geelhaar, H. Riechert, and A. Trampert

38 Author J. Lähnemann , C. Hauswald , M. Wölz , U. Jahn , M. Hanke , L. Geelhaar , O. Brandt
Title

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

Source J. Phys. D , 47 , 394010 ( 2014 )
DOI : 10.1088/0022-3727/47/39/394010 | Download arXiv: 1405.1507 | 2571 Cite : Bibtex RIS
J. Lähnemann, C. Hauswald, M. Wölz, U. Jahn, M. Hanke, L. Geelhaar, and O. Brandt

39 Author F. Grosse , A. Proessdorf , M. Hanke , O. Bierwagen
Title

In situ observation of epitaxial Li-Si-nanostructure formation on Si(111)

Source J. Phys. Chem. C , 118 , 21572 ( 2014 )
DOI : 10.1021/jp5025735 | 2556 Cite : Bibtex RIS
F. Grosse, A. Proessdorf, M. Hanke, and O. Bierwagen

40 Author A. Proessdorf , M. Niehle , M. Hanke , F. Grosse , V. M. Kaganer , O. Bierwagen , A. Trampert
Title

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diff raction

Source Appl. Phys. Lett. , 105 , 021601 ( 2014 )
DOI : 10.1063/1.4890107 | Download: PDF | 2581 Cite : Bibtex RIS
A. Proessdorf, M. Niehle, M. Hanke, F. Grosse, V. M. Kaganer, O. Bierwagen, and A. Trampert