Dr. Michael Hanke

Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations

@article{ author = { N. Buczek and M. Hanke and P. Buczek and M. Dubslaff and A.A. Tonkikh and B. Fuhrmann and H.S. Leipner }, title = { Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations }, journal = { AIP Advances }, volume = { 12 }, year = { 2022 }, pages = { 045006 } }

TY - JOUR AU - N. Buczek AU - M. Hanke AU - P. Buczek AU - M. Dubslaff AU - A.A. Tonkikh AU - B. Fuhrmann AU - H.S. Leipner TI - Elastic behavior of metal-assisted etched Si/SiGe superlattice nanowires containing dislocations JF - AIP Advances JA - AIP Adv. J1 - VL - 12 SP - 045006 PY - 2022/04/01

Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires

@article{ author = { M. Hanke and C. Richter and F. Lange and A. Reis and J. Parker and T. Boeck }, title = { Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 101902 } }

TY - JOUR AU - M. Hanke AU - C. Richter AU - F. Lange AU - A. Reis AU - J. Parker AU - T. Boeck TI - Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 101902 PY - 2022/03/10

Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP

@article{ author = { Y. Takagaki and M. Hanke and M. Ramsteiner }, title = { Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP }, journal = { Crystal Growth & Design }, volume = { 21 }, year = { 2021 }, pages = { 6314 } }

TY - JOUR AU - Y. Takagaki AU - M. Hanke AU - M. Ramsteiner TI - Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 21 SP - 6314 PY - 2021/11/03

Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene

@article{ author = { J. M. J. Lopes and D. Czubak and E. Zallo and A.I. Figueroa and C. Guillemard and M. Valvidares and J.R. Zuazo and J. López-Sanchéz and S.O. Valenzuela and M. Hanke and M. Ramsteiner }, title = { Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene }, journal = { 2D Materials }, volume = { 8 }, year = { 2021 }, pages = { 041001 } }

TY - JOUR AU - J. M. J. Lopes AU - D. Czubak AU - E. Zallo AU - A.I. Figueroa AU - C. Guillemard AU - M. Valvidares AU - J.R. Zuazo AU - J. López-Sanchéz AU - S.O. Valenzuela AU - M. Hanke AU - M. Ramsteiner TI - Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 8 SP - 041001 PY - 2021/08/11

The Role of Substrate on the Growth of 2D Heterostructures by CVD

@article{ author = { T.O Feijó and G. Copetti and E. R. F. Gerling and M. Hanke and J. M. J. Lopes and C. Radtke and G. V. Soares }, title = { The Role of Substrate on the Growth of 2D Heterostructures by CVD }, journal = { Applied Surface Science }, volume = { 539 }, year = { 2021 }, pages = { 148226 } }

TY - JOUR AU - T.O Feijó AU - G. Copetti AU - E. R. F. Gerling AU - M. Hanke AU - J. M. J. Lopes AU - C. Radtke AU - G. V. Soares TI - The Role of Substrate on the Growth of 2D Heterostructures by CVD JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 539 SP - 148226 PY - 2021/02/14

Temperature dependence of three- dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films

@article{ author = { M. Schmidbauer and L.Bogula and B. Wang and M. Hanke and L. von Helden and A. Ladera and J.-J. Wang and L.-Q. Chen and J. Schwarzkopf }, title = { Temperature dependence of three- dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films }, journal = { Journal of Applied Physics }, volume = { 128 }, year = { 2020 }, pages = { 184101 } }

TY - JOUR AU - M. Schmidbauer AU - L.Bogula AU - B. Wang AU - M. Hanke AU - L. von Helden AU - A. Ladera AU - J.-J. Wang AU - L.-Q. Chen AU - J. Schwarzkopf TI - Temperature dependence of three- dimensional domain wall arrangement in ferroelectric K0.9Na0.1NbO3 epitaxial thin films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 128 SP - 184101 PY - 2020/11/09

Ferroelectric Phase Transitions in Multi-Domain K0.9Na0.1NbO3 Epitaxial Thin Films

@article{ author = { L. Bogula and L. von Helden and C. Richter and M. Hanke and J. Schwarzkopf and M. Schmidbauer }, title = { Ferroelectric Phase Transitions in Multi-Domain K0.9Na0.1NbO3 Epitaxial Thin Films }, journal = { Nano Futures }, volume = { 4 }, year = { 2020 }, pages = { 035005 } }

TY - JOUR AU - L. Bogula AU - L. von Helden AU - C. Richter AU - M. Hanke AU - J. Schwarzkopf AU - M. Schmidbauer TI - Ferroelectric Phase Transitions in Multi-Domain K0.9Na0.1NbO3 Epitaxial Thin Films JF - Nano Futures JA - Nano Futures J1 - 2399-1984 VL - 4 SP - 035005 PY - 2020/08/03

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures

@article{ author = { M. Heilmann and A. S. Prikhodko and M. Hanke and A. Sabelfeld and N. I. Borgardt and J. M. J. Lopes }, title = { Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures }, journal = { ACS Applied Materials and Interfaces }, volume = { 12 }, year = { 2020 }, pages = { 8897 } }

TY - JOUR AU - M. Heilmann AU - A. S. Prikhodko AU - M. Hanke AU - A. Sabelfeld AU - N. I. Borgardt AU - J. M. J. Lopes TI - Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 12 SP - 8897 PY - 2020/01/23

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

@article{ author = { M. Budde and T. Remmele and C. Tschammer and J. Feldl and P. Franz and J. Lähnemann and Z. Cheng and M. Hanke and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 015306 } }

TY - JOUR AU - M. Budde AU - T. Remmele AU - C. Tschammer AU - J. Feldl AU - P. Franz AU - J. Lähnemann AU - Z. Cheng AU - M. Hanke AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 015306 PY - 2020/01/06

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

@article{ author = { B. Jenichen and Z. Cheng and M. Hanke and J. Herfort and A. Trampert }, title = { Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 124002 } }

TY - JOUR AU - B. Jenichen AU - Z. Cheng AU - M. Hanke AU - J. Herfort AU - A. Trampert TI - Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 124002 PY - 2019/10/29