Acting Director
Head of Department Epitaxy
phone: +49 30 20377 359
room: 0714
email: geelhaar@pdi-berlin.de
Department: Epitaxy
Core research areas: Nanofabrication , III-V nanowires for optoelectronics
91 | Author | G. Bussone , E. Dimakis , R. Grifone , A. Biermanns , A. Tahraoui , D. Carbone , L. Geelhaar , T. U. Schülli , U. Pietsch |
Title |
Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures |
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Source | Phys. Status Solidi-Rapid Res. Lett. , 8 , 1007 ( 2014 ) | |
DOI : 10.1002/pssr.201409346 | Cite : Bibtex RIS |
92 | Author | J. Grandal , M. Wu , X. Kong , M. Hanke , E. Dimakis , L. Geelhaar , H. Riechert , A. Trampert |
Title |
Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires |
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Source | Appl. Phys. Lett. , 105 , 121602 ( 2014 ) | |
DOI : 10.1063/1.4896505 | Download: PDF | Cite : Bibtex RIS |
93 | Author | J. Lähnemann , C. Hauswald , M. Wölz , U. Jahn , M. Hanke , L. Geelhaar , O. Brandt |
Title |
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy |
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Source | J. Phys. D: Appl. Phys. , 47 , 394010 ( 2014 ) | |
DOI : 10.1088/0022-3727/47/39/394010 | Download arXiv: 1405.1507 | Cite : Bibtex RIS |
94 | Author | O. Marquardt , L. Geelhaar , O. Brandt |
Title |
Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter |
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Source | J. Phys. D: Appl. Phys. , 47 , 1 ( 2014 ) | |
DOI : 10.1088/0022-3727/47/39/394007 | Cite : Bibtex RIS |
95 | Author | S. Bietti , C. Somaschini , C. Frigeri , A. Fedorov , L. Esposito , L. Geelhaar , S. Sanguinetti |
Title |
Self-assisted GaAs nanowires with controllable number density on bare Silicon |
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Source | J. Phys. D: Appl. Phys. , 47 , 394002 ( 2014 ) | |
DOI : 10.1088/0022-3727/47/39/394002 | Cite : Bibtex RIS |
96 | Author | O. Marquardt , L. Geelhaar , O. Brandt |
Title |
Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter |
|
Source | IEEE , IEEE Catalog Nr. CFP14817-PRT , 15 ( 2014 ) | |
DOI : ISBN 978-1-4799-3681-6 | Download arXiv: | Cite : Bibtex RIS |
97 | Author | M. Musolino , A. Tahraoui , F. Limbach , J. Lähnemann , U. Jahn , O. Brandt , L. Geelhaar , H. Riechert |
Title |
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires |
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Source | Appl. Phys. Lett. , 105 , 083505 ( 2014 ) | |
DOI : 10.1063/1.4894241 | Download: PDF | Cite : Bibtex RIS |
98 | Author | E. Dimakis , U. Jahn , M. Ramsteiner , A. Tahraoui , J. Grandal , X. Kong , O. Marquardt , A. Trampert , H. Riechert , L. Geelhaar |
Title |
Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates |
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Source | Nano Lett. , 14 , 2604 ( 2014 ) | |
DOI : 10.1021/nl500428v | Cite : Bibtex RIS |
99 | Author | C. Hauswald , T. Flissikowski , L. Geelhaar , H. T. Grahn , H. Riechert , O. Brandt |
Title |
Radiative and nonradiative decay of excitons in GaN nanowires |
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Source | Proc. SPIE , 8986 , 89860V ( 2014 ) | |
DOI : 10.1117/12.2039082 | Download: PDF | Cite : Bibtex RIS |
100 | Author | S. Büyükköse , A. Hernández-Mínguez , B. Vratzov , C. Somaschini , L. Geelhaar , H. Riechert , W. G. van der Wiel , P. V. Santos |
Title |
High-frequency acoustic charge transport in GaAs nanowires |
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Source | Nanotechnology , 25 , 135204 ( 2014 ) | |
DOI : 10.1088/0957-4484/25/13/135204 | Cite : Bibtex RIS |