Dr. Lutz Geelhaar

Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

@article{ author = { G. Bussone and E. Dimakis and R. Grifone and A. Biermanns and A. Tahraoui and D. Carbone and L. Geelhaar and T. U. Schülli and U. Pietsch }, title = { Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 8 }, year = { 2014 }, pages = { 1007 } }

TY - JOUR AU - G. Bussone AU - E. Dimakis AU - R. Grifone AU - A. Biermanns AU - A. Tahraoui AU - D. Carbone AU - L. Geelhaar AU - T. U. Schülli AU - U. Pietsch TI - Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 8 SP - 1007 PY - 2014/09/25

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

@article{ author = { J. Grandal and M. Wu and X. Kong and M. Hanke and E. Dimakis and L. Geelhaar and H. Riechert and A. Trampert }, title = { Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 121602 } }

TY - JOUR AU - J. Grandal AU - M. Wu AU - X. Kong AU - M. Hanke AU - E. Dimakis AU - L. Geelhaar AU - H. Riechert AU - A. Trampert TI - Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 121602 PY - 2014/09/22

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

@article{ author = { J. Lähnemann and C. Hauswald and M. Wölz and U. Jahn and M. Hanke and L. Geelhaar and O. Brandt }, title = { Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 394010 } }

TY - JOUR AU - J. Lähnemann AU - C. Hauswald AU - M. Wölz AU - U. Jahn AU - M. Hanke AU - L. Geelhaar AU - O. Brandt TI - Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 394010 PY - 2014/09/12

Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 1 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 1 PY - 2014/09/12

Self-assisted GaAs nanowires with controllable number density on bare Silicon

@article{ author = { S. Bietti and C. Somaschini and C. Frigeri and A. Fedorov and L. Esposito and L. Geelhaar and S. Sanguinetti }, title = { Self-assisted GaAs nanowires with controllable number density on bare Silicon }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 394002 } }

TY - JOUR AU - S. Bietti AU - C. Somaschini AU - C. Frigeri AU - A. Fedorov AU - L. Esposito AU - L. Geelhaar AU - S. Sanguinetti TI - Self-assisted GaAs nanowires with controllable number density on bare Silicon JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 394002 PY - 2014/09/11

Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP14817-PRT }, year = { 2014 }, pages = { 15 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP14817-PRT SP - 15 PY - 2014/09/01

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

@article{ author = { M. Musolino and A. Tahraoui and F. Limbach and J. Lähnemann and U. Jahn and O. Brandt and L. Geelhaar and H. Riechert }, title = { Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 083505 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - F. Limbach AU - J. Lähnemann AU - U. Jahn AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 083505 PY - 2014/08/26

Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates

@article{ author = { E. Dimakis and U. Jahn and M. Ramsteiner and A. Tahraoui and J. Grandal and X. Kong and O. Marquardt and A. Trampert and H. Riechert and L. Geelhaar }, title = { Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 2604 } }

TY - JOUR AU - E. Dimakis AU - U. Jahn AU - M. Ramsteiner AU - A. Tahraoui AU - J. Grandal AU - X. Kong AU - O. Marquardt AU - A. Trampert AU - H. Riechert AU - L. Geelhaar TI - Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 2604 PY - 2014/05/14

Radiative and nonradiative decay of excitons in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and L. Geelhaar and H. T. Grahn and H. Riechert and O. Brandt }, title = { Radiative and nonradiative decay of excitons in GaN nanowires }, journal = { Proceedings of SPIE }, volume = { 8986 }, year = { 2014 }, pages = { 89860V } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - L. Geelhaar AU - H. T. Grahn AU - H. Riechert AU - O. Brandt TI - Radiative and nonradiative decay of excitons in GaN nanowires JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8986 SP - 89860V PY - 2014/03/08

High-frequency acoustic charge transport in GaAs nanowires

@article{ author = { S. Büyükköse and A. Hernández-Mínguez and B. Vratzov and C. Somaschini and L. Geelhaar and H. Riechert and W. G. van der Wiel and P. V. Santos }, title = { High-frequency acoustic charge transport in GaAs nanowires }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 135204 } }

TY - JOUR AU - S. Büyükköse AU - A. Hernández-Mínguez AU - B. Vratzov AU - C. Somaschini AU - L. Geelhaar AU - H. Riechert AU - W. G. van der Wiel AU - P. V. Santos TI - High-frequency acoustic charge transport in GaAs nanowires JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 135204 PY - 2014/03/04