PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

101 Author S. Breuer , L.-F. Feiner , L. Geelhaar
Title

Droplet bulge effect on the formation of nanowire side facets

Source Cryst. Growth Des. , 13 , 2749 ( 2013 )
DOI : 10.1021/cg301770f | 2318 Cite : Bibtex RIS
S. Breuer, L.-F. Feiner, and L. Geelhaar

102 Author K. K. Sabelfeld , V. M. Kaganer , F. Limbach , P. Dogan , O. Brandt , L. Geelhaar , H. Riechert
Title

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

Source Appl. Phys. Lett. , 103 , 133105 ( 2013 )
Download: PDF | 2373 Cite : Bibtex RIS
K. K. Sabelfeld, V. M. Kaganer, F. Limbach, P. Dogan, O. Brandt, L. Geelhaar, and H. Riechert

103 Author M. H. Oliveira Jr. , T. Schumann , R. Gargallo-Caballero , F. Fromm , T. Seyller , M. Ramsteiner , A. Trampert , L. Geelhaar , J. M. J. Lopes , H. Riechert
Title

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

Source Carbon , 56 , 339 ( 2013 )
2374 Cite : Bibtex RIS
M. H. Oliveira Jr., T. Schumann, R. Gargallo-Caballero, F. Fromm, T. Seyller, M. Ramsteiner, A. Trampert, L. Geelhaar, J. M. J. Lopes, and H. Riechert

104 Author Y. Puttisong , I. A. Buyanova , A. J. Ptak , C. W. Tu , L. Geelhaar , H. Riechert , W. M. Chen
Title

Room-temperature electron spin amplifier based on Ga(In)NAs alloys

Source Adv. Mater. , 25 , 738 ( 2013 )
2388 Cite : Bibtex RIS
Y. Puttisong, I. A. Buyanova, A. J. Ptak, C. W. Tu, L. Geelhaar, H. Riechert, and W. M. Chen

105 Author Y. Puttisong , X. J. Wang , I. A. Buyanova , L. Geelhaar , H. Riechert , A. J. Ptak , C. W. Tu , W. M. Chen
Title

Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Source Nat. Commun. , 4 , 1751 ( 2013 )
2406 Cite : Bibtex RIS
Y. Puttisong, X. J. Wang, I. A. Buyanova, L. Geelhaar, H. Riechert, A. J. Ptak, C. W. Tu, and W. M. Chen

106 Author M. Wölz , M. Ramsteiner , V. M. Kaganer , O. Brandt , L. Geelhaar , H. Riechert
Title

Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy

Source Nano Lett. , 13 , 4053 ( 2013 )
2407 Cite : Bibtex RIS
M. Wölz, M. Ramsteiner, V. M. Kaganer, O. Brandt, L. Geelhaar, and H. Riechert

107 Author C. Somaschini , S. Bietti , A. Trampert , U. Jahn , C. Hauswald , H. Riechert , S. Sanguinetti , L. Geelhaar
Title

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy

Source Nano Lett. , 13 , 3607 ( 2013 )
2408 Cite : Bibtex RIS
C. Somaschini, S. Bietti, A. Trampert, U. Jahn, C. Hauswald, H. Riechert, S. Sanguinetti, and L. Geelhaar

108 Author O. Marquardt , C. Hauswald , M. Wölz , L. Geelhaar , O. Brandt
Title

Luminous efficiency of axial InxGa1-xN/GaN nanowire heterostructures: Interplay of polarization and surface potentials

Source Nano Lett. , 13 , 3298 ( 2013 )
2409 Cite : Bibtex RIS
O. Marquardt, C. Hauswald, M. Wölz, L. Geelhaar, and O. Brandt

109 Author S. Fernández-Garrido , V. M. Kaganer , K. K. Sabelfeld , T. Gotschke , J. Grandal , E. Calleja , L. Geelhaar , O. Brandt
Title

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Source Nano Lett. , 13 , 3274 ( 2013 )
2410 Cite : Bibtex RIS
S. Fernández-Garrido, V. M. Kaganer, K. K. Sabelfeld, T. Gotschke, J. Grandal, E. Calleja, L. Geelhaar, and O. Brandt

110 Author J. Kamimura , P. Bogdanoff , J. Lähnemann , C. Hauswald , L. Geelhaar , S. Fiechter , H. Riechert
Title

Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy

Source J. Am. Chem. Soc. , 135 , 10242 ( 2013 )
2415 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, J. Lähnemann, C. Hauswald, L. Geelhaar, S. Fiechter, and H. Riechert