PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

111 Author M. Wölz , M. Ramsteiner , V. M. Kaganer , O. Brandt , L. Geelhaar , H. Riechert
Title

Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy

Source Nano Lett. , 13 , 4053 ( 2013 )
2407 Cite : Bibtex RIS
M. Wölz, M. Ramsteiner, V. M. Kaganer, O. Brandt, L. Geelhaar, and H. Riechert

112 Author C. Somaschini , S. Bietti , A. Trampert , U. Jahn , C. Hauswald , H. Riechert , S. Sanguinetti , L. Geelhaar
Title

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy

Source Nano Lett. , 13 , 3607 ( 2013 )
2408 Cite : Bibtex RIS
C. Somaschini, S. Bietti, A. Trampert, U. Jahn, C. Hauswald, H. Riechert, S. Sanguinetti, and L. Geelhaar

113 Author O. Marquardt , C. Hauswald , M. Wölz , L. Geelhaar , O. Brandt
Title

Luminous efficiency of axial InxGa1-xN/GaN nanowire heterostructures: Interplay of polarization and surface potentials

Source Nano Lett. , 13 , 3298 ( 2013 )
2409 Cite : Bibtex RIS
O. Marquardt, C. Hauswald, M. Wölz, L. Geelhaar, and O. Brandt

114 Author S. Fernández-Garrido , V. M. Kaganer , K. K. Sabelfeld , T. Gotschke , J. Grandal , E. Calleja , L. Geelhaar , O. Brandt
Title

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Source Nano Lett. , 13 , 3274 ( 2013 )
2410 Cite : Bibtex RIS
S. Fernández-Garrido, V. M. Kaganer, K. K. Sabelfeld, T. Gotschke, J. Grandal, E. Calleja, L. Geelhaar, and O. Brandt

115 Author J. Kamimura , P. Bogdanoff , J. Lähnemann , C. Hauswald , L. Geelhaar , S. Fiechter , H. Riechert
Title

Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy

Source J. Am. Chem. Soc. , 135 , 10242 ( 2013 )
2415 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, J. Lähnemann, C. Hauswald, L. Geelhaar, S. Fiechter, and H. Riechert

116 Author C. Hauswald , T. Flissikowski , T. Gotschke , R. Calarco , L. Geelhaar , H.T. Grahn , O. Brandt
Title

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

Source Phys. Rev. B , 88 , 075312 ( 2013 )
Download: PDF | 2421 Cite : Bibtex RIS
C. Hauswald, T. Flissikowski, T. Gotschke, R. Calarco, L. Geelhaar, H.T. Grahn, and O. Brandt

117 Author M. Ramsteiner , O. Brandt , P. Kusch , S. Breuer , S. Reich , L. Geelhaar
Title

Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

Source Appl. Phys. Lett. , 103 , 043121 ( 2013 )
Download: PDF | 2427 Cite : Bibtex RIS
M. Ramsteiner, O. Brandt, P. Kusch, S. Breuer, S. Reich, and L. Geelhaar

118 Author F. Limbach , C. Hauswald , J. Lähnemann , M. Wölz , O. Brandt , A. Trampert , M. Hanke , U. Jahn , R. Calarco , L. Geelhaar , H. Riechert
Title

Current path in light emitting diodes based on nanowire ensembles

Source Nanotechnology , 23 , 465301 ( 2012 )
DOI : 10.1088/0957-4484/23/46/465301 | Download arXiv: 1210.7144 | 2339 Cite : Bibtex RIS
F. Limbach, C. Hauswald, J. Lähnemann, M. Wölz, O. Brandt, A. Trampert, M. Hanke, U. Jahn, R. Calarco, L. Geelhaar, and H. Riechert

119 Author M. Wölz , J. Lähnemann , O. Brandt , V. M. Kaganer , M. Ramsteiner , C. Pfüller , C. Hauswald , C. N. Huang , L. Geelhaar , H. Riechert
Title

Correlation between In content and emission wavelength of InxGa1-xN/GaN nanowire heterostructures

Source Nanotechnology , 23 , 455203 ( 2012 )
DOI : 10.1088/0957-4484/23/45/455203 | Download arXiv: 1210.7597 | 2317 Cite : Bibtex RIS
M. Wölz, J. Lähnemann, O. Brandt, V. M. Kaganer, M. Ramsteiner, C. Pfüller, C. Hauswald, C. N. Huang, L. Geelhaar, and H. Riechert

120 Author J. Lähnemann , O. Brandt , U. Jahn , C. Pfüller , C. Roder , P. Dogan , F. Grosse , A. Belabbes , F. Bechstedt , A. Trampert , L. Geelhaar
Title

Direct experimental determination of the spontaneous polarization of GaN

Source Phys. Rev. B , 86 , 081302(R) ( 2012 )
DOI : 10.1103/PhysRevB.86.081302 | Download: PDF | 2267 Cite : Bibtex RIS
J. Lähnemann, O. Brandt, U. Jahn, C. Pfüller, C. Roder, P. Dogan, F. Grosse, A. Belabbes, F. Bechstedt, A. Trampert, and L. Geelhaar