PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

131 Author A. Biermanns , S. Breuer , A. Trampert , A. Davydok , L. Geelhaar , U. Pietsch
Title

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon(111)

Source Nanotechnology , 23 , 305703 ( 2012 )
2305 Cite : Bibtex RIS
A. Biermanns, S. Breuer, A. Trampert, A. Davydok, L. Geelhaar, and U. Pietsch

132 Author A. Gorgis , T. Flissikowski , O. Brandt , C. Chèze , L. Geelhaar , H. Riechert , H.T. Grahn
Title

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

Source Phys. Rev. B , 86 , 041302(R) ( 2012 )
Download: PDF | 2306 Cite : Bibtex RIS
A. Gorgis, T. Flissikowski, O. Brandt, C. Chèze, L. Geelhaar, H. Riechert, and H.T. Grahn

133 Author Y. Puttisong , I. A. Buyanova , L. Geelhaar , H. Riechert , C. W. Tu , W. M. Chen
Title

Efficient room-temperature spin detector based on GaNAs

Source J. Appl. Phys. , 111 , 07C303 ( 2012 )
Download: PDF | 2312 Cite : Bibtex RIS
Y. Puttisong, I. A. Buyanova, L. Geelhaar, H. Riechert, C. W. Tu, and W. M. Chen

134 Author V. G. Dubrovskii , V. Consonni , A. Trampert , L. Geelhaar , H. Riechert
Title

Scaling thermodynamic model for the self-induced formation of GaN nanowires

Source Phys. Rev. B , 85 , 165317 ( 2012 )
Download: PDF | 2316 Cite : Bibtex RIS
V. G. Dubrovskii, V. Consonni, A. Trampert, L. Geelhaar, and H. Riechert

135 Author P. Kusch , S. Breuer , M. Ramsteiner , L. Geelhaar , H. Riechert , S. Reich
Title

Band gap of wurtzite GaAs: A resonant Raman study

Source Phys. Rev. B , 86 , 075317 ( 2012 )
Download: PDF | 2323 Cite : Bibtex RIS
P. Kusch, S. Breuer, M. Ramsteiner, L. Geelhaar, H. Riechert, and S. Reich

136 Author C. Pfüller , M. Ramsteiner , O. Brandt , F. Grosse , A. Rathsfeld , G. Schmidt , L. Geelhaar , H. Riechert
Title

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

Source Appl. Phys. Lett. , 101 , 083104 ( 2012 )
Download: PDF | 2328 Cite : Bibtex RIS
C. Pfüller, M. Ramsteiner, O. Brandt, F. Grosse, A. Rathsfeld, G. Schmidt, L. Geelhaar, and H. Riechert

137 Author S. Fernández-Garrido , X. Kong , T. Gotschke , R. Calarco , L. Geelhaar , A. Trampert , O. Brandt
Title

Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity

Source Nano Lett. , 12 , 6119 ( 2012 )
2338 Cite : Bibtex RIS
S. Fernández-Garrido, X. Kong, T. Gotschke, R. Calarco, L. Geelhaar, A. Trampert, and O. Brandt

138 Author M. Wölz , S. Fernández-Garrido , C. Hauswald , O. Brandt , F. Limbach , L. Geelhaar , H. Riechert
Title

Indium incorporation in InxGa1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

Source Cryst. Growth Des. , 12 , 5686 ( 2012 )
2351 Cite : Bibtex RIS
M. Wölz, S. Fernández-Garrido, C. Hauswald, O. Brandt, F. Limbach, L. Geelhaar, and H. Riechert

139 Author E. Dimakis , M. Ramsteiner , A. Tahraoui , H. Riechert , L. Geelhaar
Title

Shell-doping of GaAs nanowires with Si for n-type conductivity

Source Nano Res. , 5 , 796 ( 2012 )
2356 Cite : Bibtex RIS
E. Dimakis, M. Ramsteiner, A. Tahraoui, H. Riechert, and L. Geelhaar

140 Author M. Wölz , V. M. Kaganer , O. Brandt , L. Geelhaar , H. Riechert
Title

Erratum: “Analyzing the growth of InxGa1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

Source Appl. Phys. Lett. , 100 , 179902 ( 2012 )
Download: PDF | 2393 Cite : Bibtex RIS
M. Wölz, V. M. Kaganer, O. Brandt, L. Geelhaar, and H. Riechert