PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

141 Author S. Fernández-Garrido , X. Kong , T. Gotschke , R. Calarco , L. Geelhaar , A. Trampert , O. Brandt
Title

Spontaneous nucleation and growth of GaN nanowires: The fundamental role of crystal polarity

Source Nano Lett. , 12 , 6119 ( 2012 )
2338 Cite : Bibtex RIS
S. Fernández-Garrido, X. Kong, T. Gotschke, R. Calarco, L. Geelhaar, A. Trampert, and O. Brandt

142 Author M. Wölz , S. Fernández-Garrido , C. Hauswald , O. Brandt , F. Limbach , L. Geelhaar , H. Riechert
Title

Indium incorporation in InxGa1-xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry

Source Cryst. Growth Des. , 12 , 5686 ( 2012 )
2351 Cite : Bibtex RIS
M. Wölz, S. Fernández-Garrido, C. Hauswald, O. Brandt, F. Limbach, L. Geelhaar, and H. Riechert

143 Author E. Dimakis , M. Ramsteiner , A. Tahraoui , H. Riechert , L. Geelhaar
Title

Shell-doping of GaAs nanowires with Si for n-type conductivity

Source Nano Res. , 5 , 796 ( 2012 )
2356 Cite : Bibtex RIS
E. Dimakis, M. Ramsteiner, A. Tahraoui, H. Riechert, and L. Geelhaar

144 Author M. Wölz , V. M. Kaganer , O. Brandt , L. Geelhaar , H. Riechert
Title

Erratum: “Analyzing the growth of InxGa1-xN/GaN superlattices in selfinduced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]

Source Appl. Phys. Lett. , 100 , 179902 ( 2012 )
Download: PDF | 2393 Cite : Bibtex RIS
M. Wölz, V. M. Kaganer, O. Brandt, L. Geelhaar, and H. Riechert

145 Author Y. Takagaki , J. Herfort , M. Hilse , L. Geelhaar , H. Riechert
Title

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures

Source J. Phys.: Condens. Matter , 23 , 126002 ( 2011 )
2126 Cite : Bibtex RIS
Y. Takagaki, J. Herfort, M. Hilse, L. Geelhaar, and H. Riechert

146 Author M. Hilse , Y. Takagaki , M. Ramsteiner , J. Herfort , S. Breuer , L. Geelhaar , H. Riechert
Title

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

Source J. Cryst. Growth , 323 , 307 ( 2011 )
2131 Cite : Bibtex RIS
M. Hilse, Y. Takagaki, M. Ramsteiner, J. Herfort, S. Breuer, L. Geelhaar, and H. Riechert

147 Author S. Breuer , M. Hilse , L. Geelhaar , H. Riechert
Title

Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison

Source J. Cryst. Growth , 323 , 311 ( 2011 )
2134 Cite : Bibtex RIS
S. Breuer, M. Hilse, L. Geelhaar, and H. Riechert

148 Author P. Dogan , O. Brandt , C. Pfüller , A.-K. Bluhm , L. Geelhaar , H. Riechert
Title

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

Source J. Cryst. Growth , 323 , 418 ( 2011 )
2154 Cite : Bibtex RIS
P. Dogan, O. Brandt, C. Pfüller, A.-K. Bluhm, L. Geelhaar, and H. Riechert

149 Author L. Lari , T. Walther , M. H. Gass , L. Geelhaar , C. Chèze , H. Riechert , T. J. Bullough , P. R. Chalker
Title

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires

Source J. Cryst. Growth , 327 , 27 ( 2011 )
2158 Cite : Bibtex RIS
L. Lari, T. Walther, M. H. Gass, L. Geelhaar, C. Chèze, H. Riechert, T. J. Bullough, and P. R. Chalker

150 Author V. Consonni , M. Hanke , M. Knelangen , L. Geelhaar , A. Trampert , H. Riechert
Title

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

Source Phys. Rev. B , 83 , 035310 ( 2011 )
Download: PDF | 2159 Cite : Bibtex RIS
V. Consonni, M. Hanke, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert