PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

151 Author H. Riechert , O. Brandt , C. Chèze , V. Consonni , M. Knelangen , J. Lähnemann , F. Limbach , C. Pfüller , A. Trampert , M. Wölz , L. Geelhaar
Title

Nitride nanowire structures for LED applications

Source Proc. SPIE , 7954 , 79540S ( 2011 )
Download: PDF | 2188 Cite : Bibtex RIS
H. Riechert, O. Brandt, C. Chèze, V. Consonni, M. Knelangen, J. Lähnemann, F. Limbach, C. Pfüller, A. Trampert, M. Wölz, and L. Geelhaar

152 Author M. Grube , D. Martin , W. M. Weber , T. Mikolajick , O. Bierwagen , L. Geelhaar , H. Riechert
Title

Applicability of molecular beam deposition for the growth of high-k oxides

Source J. Vac. Sci. Technol. B , 29 , 01AC05 ( 2011 )
2199 Cite : Bibtex RIS
M. Grube, D. Martin, W. M. Weber, T. Mikolajick, O. Bierwagen, L. Geelhaar, and H. Riechert

153 Author A. Biermanns , S. Breuer , A. Davydok , L. Geelhaar , U. Pietsch
Title

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

Source Phys. Status Solidi-Rapid Res. Lett. , 5 , 156 ( 2011 )
2207 Cite : Bibtex RIS
A. Biermanns, S. Breuer, A. Davydok, L. Geelhaar, and U. Pietsch

154 Author M. Wölz , V. M. Kaganer , O. Brandt , L. Geelhaar , H. Riechert
Title

Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Source Appl. Phys. Lett. , 98 , 261907 ( 2011 )
Download: PDF | 2208 Cite : Bibtex RIS
M. Wölz, V. M. Kaganer, O. Brandt, L. Geelhaar, and H. Riechert

155 Author V. M. Kaganer , M. Wölz , O. Brandt , L. Geelhaar , H. Riechert
Title

X-ray diffraction profiles from axial nanowire heterostructures

Source Phys. Rev. B , 83 , 245321 ( 2011 )
Download: PDF | 2211 Cite : Bibtex RIS
V. M. Kaganer, M. Wölz, O. Brandt, L. Geelhaar, and H. Riechert

156 Author R. Calarco , T. Stoica , O. Brandt , L. Geelhaar
Title

Surface-induced effects in GaN nanowires

Source J. Mater. Res. , 26 , 2157 ( 2011 )
2213 Cite : Bibtex RIS
R. Calarco, T. Stoica, O. Brandt, and L. Geelhaar

157 Author H. Amari , L. Lari , H. Y. Zhang , L. Geelhaar , C. Chèze , M. J. Kappers , C. McAleese , C. J. Humphreys , T. Walther
Title

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope

Source J. Phys.: Conf. Ser. , 326 , 012028 ( 2011 )
2214 Cite : Bibtex RIS
H. Amari, L. Lari, H. Y. Zhang, L. Geelhaar, C. Chèze, M. J. Kappers, C. McAleese, C. J. Humphreys, and T. Walther

158 Author H. Amari , H. Y. Zhang , L. Geelhaar , C. Chèze , M. J. Kappers , T. Walther
Title

Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

Source J. Phys.: Conf. Ser. , 326 , 012039 ( 2011 )
2215 Cite : Bibtex RIS
H. Amari, H. Y. Zhang, L. Geelhaar, C. Chèze, M. J. Kappers, and T. Walther

159 Author V. Consonni , A. Trampert , L. Geelhaar , H. Riechert
Title

Physical origin of the incubation time of self-induced GaN nanowires

Source Appl. Phys. Lett. , 99 , 033102 ( 2011 )
Download: PDF | 2221 Cite : Bibtex RIS
V. Consonni, A. Trampert, L. Geelhaar, and H. Riechert

160 Author E. Dimakis , J. Lähnemann , U. Jahn , S. Breuer , M. Hilse , L. Geelhaar , H. Riechert
Title

Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111)

Source Cryst. Growth Des. , 11 , 4001 ( 2011 )
2253 Cite : Bibtex RIS
E. Dimakis, J. Lähnemann, U. Jahn, S. Breuer, M. Hilse, L. Geelhaar, and H. Riechert