PDI -> Staff ->

Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

161 Author C. Chèze , L. Geelhaar , O. Brandt , W. M. Weber , H. Riechert , S. Münch , R. Rothemund , S. Reitzenstein , A. Forchel , T. Kehagias , P. Komninou , G. P. Dimitrakopulos , T. Karakostas
Title

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Source Nano Res. , 3 , 528 ( 2010 )
2069 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas

162 Author C. Pfüller , O. Brandt , F. Grosse , T. Flissikowski , C. Chèze , V. Consonni , L. Geelhaar , H.T. Grahn , H. Riechert
Title

Unpinning the Fermi level in GaN nanowires by ultraviolet radiation

Source Phys. Rev. B , 82 , 045320 ( 2010 )
Download: PDF | 2075 Cite : Bibtex RIS
C. Pfüller, O. Brandt, F. Grosse, T. Flissikowski, C. Chèze, V. Consonni, L. Geelhaar, H.T. Grahn, and H. Riechert

163 Author C. Chèze , L. Geelhaar , B. Jenichen , H. Riechert
Title

Different growth rates for catalyst-induced and self-induced GaN nanowires

Source Appl. Phys. Lett. , 97 , 153105 ( 2010 )
2103 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, B. Jenichen, and H. Riechert

164 Author L. Lari , T. Walther , K. Black , R. T. Murray , T. J. Bullough , P. R. Chalker , C. Chèze , L. Geelhaar , H. Riechert
Title

GaN, AlGaN, HfO2 based radial heterostructure nanowires

Source J. Phys.: Conf. Ser. , 209 , 012011 ( 2010 )
2088 Cite : Bibtex RIS
L. Lari, T. Walther, K. Black, R. T. Murray, T. J. Bullough, P. R. Chalker, C. Chèze, L. Geelhaar, and H. Riechert

165 Author M. Hilse , M. Ramsteiner , S. Breuer , L. Geelhaar , H. Riechert
Title

Incorporation of the dopants Si and Be into GaAs nanowires

Source Appl. Phys. Lett. , 96 , 193104 ( 2010 )
Download: PDF | 2090 Cite : Bibtex RIS
M. Hilse, M. Ramsteiner, S. Breuer, L. Geelhaar, and H. Riechert

166 Author C. Chèze , L. Geelhaar , A. Trampert , H. Riechert
Title

In situ investigation of self-induced GaN nanowire nucleation on Si

Source Appl. Phys. Lett. , 97 , 043101 ( 2010 )
Download: PDF | 2091 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, A. Trampert, and H. Riechert

167 Author C. Chèze , L. Geelhaar , A. Trampert , O. Brandt , H. Riechert
Title

Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires

Source Nano Lett. , 10 , 3426 ( 2010 )
2104 Cite : Bibtex RIS
C. Chèze, L. Geelhaar, A. Trampert, O. Brandt, and H. Riechert

168 Author L. Ivanova , H. Eisele , M.P. Vaughan , Ph. Ebert , A. Lenz , R. Timm , O. Schumann , L. Geelhaar , M. Dähne , S. Fahy , H. Riechert , E. P. O'Reilly
Title

Direct measurement and analysis of the conduction band density of states in diluted GaAsN alloys

Source Phys. Rev. B , 82 , 161201(R) ( 2010 )
Download: PDF | 2105 Cite : Bibtex RIS
L. Ivanova, H. Eisele, M.P. Vaughan, Ph. Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M. Dähne, S. Fahy, H. Riechert, and E. P. O'Reilly

169 Author C. Pfüller , O. Brandt , T. Flissikowski , C. Chèze , L. Geelhaar , H.T. Grahn , H. Riechert
Title

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the Poissonian limit

Source Nano Res. , 3 , 881 ( 2010 )
2110 Cite : Bibtex RIS
C. Pfüller, O. Brandt, T. Flissikowski, C. Chèze, L. Geelhaar, H.T. Grahn, and H. Riechert

170 Author S. Breuer , M. Hilse , A. Trampert , L. Geelhaar , H. Riechert
Title

Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires

Source Phys. Rev. B , 82 , 075406 ( 2010 )
Download: PDF | 2133 Cite : Bibtex RIS
S. Breuer, M. Hilse, A. Trampert, L. Geelhaar, and H. Riechert