PDI -> Staff ->

Dr. Lutz Geelhaar

Head of Department Epitaxy

Lutz Geelhaar

phone: +49 30 20377 359

room: 0714

email: geelhaar@pdi-berlin.de

 

Department: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

61 Author H. Li , L. Geelhaar , H. Riechert , C. Draxl
Title

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

Source Phys. Rev. Lett. , 115 , 085503 ( 2015 )
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | 2651 Cite : Bibtex RIS
H. Li, L. Geelhaar, H. Riechert, and C. Draxl

62 Author J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Title

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

63 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

64 Author O. Marquardt , L. Geelhaar , O. Brandt
Title

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

Source J. Comput. Electron. , 14 , 464 ( 2015 )
DOI : 10.1007/s10825-015-0669-1 | 2679 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

65 Author M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert
Title

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

Source Nano Lett. , 15 , 3743 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00251 | 2698 Cite : Bibtex RIS
M. Wölz, C. Hauswald, T. Flissikowski, T. Gotschke, S. Fernández-Garrido, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert

66 Author S. Schulz , O. Marquardt , C. Coughlan , M. A. Caro , L. Geelhaar , O. Brandt , E. P. O'Reilly
Title

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

Source Proc. SPIE , 9357 , ( 2015 )
DOI : 10.1117/12.2084800 | Download: PDF | 2721 Cite : Bibtex RIS
S. Schulz, O. Marquardt, C. Coughlan, M. A. Caro, L. Geelhaar, O. Brandt, and E. P. O'Reilly

67 Author S. Fernández-Garrido , J. K. Zettler , L. Geelhaar , O. Brandt
Title

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Source Nano Lett. , 15 , 1930 ( 2015 )
DOI : 10.1021/nl504778s | 2684 Cite : Bibtex RIS
S. Fernández-Garrido, J. K. Zettler, L. Geelhaar, and O. Brandt

68 Author M. Musolino , M. Meneghini , L. Scarparo , C. De Santi , A. Tahraoui , L. Geelhaar , E. Zanoni , H. Riechert
Title

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

Source Proc. SPIE , 9363 , 936325 ( 2015 )
DOI : 10.1117/12.2077438 | Download: PDF | 2694 Cite : Bibtex RIS
M. Musolino, M. Meneghini, L. Scarparo, C. De Santi, A. Tahraoui, L. Geelhaar, E. Zanoni, and H. Riechert

69 Author M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert
Title

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Source Nanotechnol. , 26 , 085605 ( 2015 )
DOI : 10.1088/0957-4484/26/8/085605 | Download arXiv: 1410.7546 | 2564 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, S. Fernández-Garrido, O. Brandt, A. Trampert, L. Geelhaar, and H. Riechert

70 Author A. Mukherjee , S. Ghosh , S. Breuer , U. Jahn , L. Geelhaar , H. T. Grahn
Title

Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases

Source J. Appl. Phys. , 117 , 054308 ( 2015 )
DOI : 10.1063/1.4907388 | Download: PDF | 2682 Cite : Bibtex RIS
A. Mukherjee, S. Ghosh, S. Breuer, U. Jahn, L. Geelhaar, and H. T. Grahn