Acting Director
Head of Department Epitaxy
phone: +49 30 20377 359
room: 0714
email: geelhaar@pdi-berlin.de
Department: Epitaxy
Core research areas: Nanofabrication , III-V nanowires for optoelectronics
61 | Author | M. Musolino , A. Tahraoui , D. van Treeck , L. Geelhaar , H. Riechert |
Title |
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles |
|
Source | Nanotechnology , 27 , 275203 ( 2016 ) | |
DOI : 10.1088/0957-4484/27/27/275203 | Cite : Bibtex RIS |
62 | Author | G. Calabrese , P. Corfdir , G. Gao , C. Pfüller , A. Trampert , O. Brandt , L. Geelhaar , S. Fernández-Garrido |
Title |
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil |
|
Source | Appl. Phys. Lett. , 108 , 202101 ( 2016 ) | |
DOI : 10.1063/1.4950707 | Download: PDF | Cite : Bibtex RIS |
63 | Author | P. Corfdir , C. Hauswald , O. Marquardt , T. Flissikowski , J. K. Zettler , S. Fernández-Garrido , L. Geelhaar , H. T. Grahn , O. Brandt |
Title |
Crystal-phase quantum dots in GaN quantum wires |
|
Source | Phys. Rev. B , 93 , 115305 ( 2016 ) | |
DOI : 10.1103/PhysRevB.93.115305 | Download: PDF | Cite : Bibtex RIS |
64 | Author | J. K. Zettler , P. Corfdir , C. Hauswald , E. Luna , U. Jahn , T. Flissikowski , E. Schmidt , C. Ronning , A. Trampert , L. Geelhaar , H. T. Grahn , O. Brandt , S. Fernández-Garrido |
Title |
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature |
|
Source | Nano Lett. , 16 , 973 ( 2016 ) | |
DOI : 10.1021/acs.nanolett.5b03931 | Cite : Bibtex RIS |
65 | Author | F. Bastiman , H. Küpers , C. Somaschini , L. Geelhaar |
Title |
Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy |
|
Source | Nanotechnology , 27 , 095601 ( 2016 ) | |
DOI : 10.1088/0957-4484/27/9/095601 | Cite : Bibtex RIS |
66 | Author | M. Musolino , D. van Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert |
Title |
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires |
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Source | J. Appl. Phys. , 119 , 044502 ( 2016 ) | |
DOI : 10.1063/1.4940949 | Download: PDF | Cite : Bibtex RIS |
67 | Author | J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt |
Title |
Radial Stark effect in (In,Ga)N nanowires |
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Source | Nano Lett. , 16 , 917 ( 2016 ) | |
DOI : 10.1021/acs.nanolett.5b03748 | Download arXiv: 1601.07201 | Cite : Bibtex RIS |
68 | Author | J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido |
Title |
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process |
|
Source | Nanotechnology , 26 , 445604 ( 2015 ) | |
DOI : 10.1088/0957-4484/26/44/445604 | Download arXiv: 1508.06266 | Cite : Bibtex RIS |
69 | Author | O. Marquardt , L. Geelhaar , O. Brandt |
Title |
Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures |
|
Source | IEEE , IEEE Catalog Nr. CFP15817-PRT , 113 ( 2015 ) | |
DOI : ISBN 978-1-4799-8378-0 | Cite : Bibtex RIS |
70 | Author | T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert |
Title |
The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy |
|
Source | J. Cryst. Growth , 425 , 274 ( 2015 ) | |
DOI : 10.1016/j.jcrysgro.2015.02.060 | Cite : Bibtex RIS |