Dr. Lutz Geelhaar

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

@article{ author = { H. Li and L. Geelhaar and H. Riechert and C. Draxl }, title = { Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN }, journal = { Physical Review Letters }, volume = { 115 }, year = { 2015 }, pages = { 085503 } }

TY - JOUR AU - H. Li AU - L. Geelhaar AU - H. Riechert AU - C. Draxl TI - Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 115 SP - 085503 PY - 2015/08/21

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

@article{ author = { J. K. Zettler and C. Hauswald and P. Corfdir and M. Musolino and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4104 } }

TY - JOUR AU - J. K. Zettler AU - C. Hauswald AU - P. Corfdir AU - M. Musolino AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4104 PY - 2015/06/29

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 4289 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 4289 PY - 2015/06/09

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Electronic properties of axial InxGa1-xN insertions in GaN nanowires }, journal = { Journal of Computational Electronics }, volume = { 14 }, year = { 2015 }, pages = { 464 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Electronic properties of axial InxGa1-xN insertions in GaN nanowires JF - Journal of Computational Electronics JA - J. Comput. Electron. J1 - VL - 14 SP - 464 PY - 2015/06/01

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

@article{ author = { S. Schulz and O. Marquardt and C. Coughlan and M. A. Caro and L. Geelhaar and O. Brandt and E. P. O'Reilly }, title = { Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells }, journal = { Proceedings of SPIE }, volume = { 9357 }, year = { 2015 }, pages = { } }

TY - JOUR AU - S. Schulz AU - O. Marquardt AU - C. Coughlan AU - M. A. Caro AU - L. Geelhaar AU - O. Brandt AU - E. P. O'Reilly TI - Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9357 SP - PY - 2015/03/16

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

@article{ author = { S. Fernández-Garrido and J. K. Zettler and L. Geelhaar and O. Brandt }, title = { Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 1930 } }

TY - JOUR AU - S. Fernández-Garrido AU - J. K. Zettler AU - L. Geelhaar AU - O. Brandt TI - Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 1930 PY - 2015/02/11

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

@article{ author = { M. Musolino and M. Meneghini and L. Scarparo and C. De Santi and A. Tahraoui and L. Geelhaar and E. Zanoni and H. Riechert }, title = { Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles }, journal = { Proceedings of SPIE }, volume = { 9363 }, year = { 2015 }, pages = { 936325 } }

TY - JOUR AU - M. Musolino AU - M. Meneghini AU - L. Scarparo AU - C. De Santi AU - A. Tahraoui AU - L. Geelhaar AU - E. Zanoni AU - H. Riechert TI - Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9363 SP - 936325 PY - 2015/02/07

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases

@article{ author = { A. Mukherjee and S. Ghosh and S. Breuer and U. Jahn and L. Geelhaar and H. T. Grahn }, title = { Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 054308 } }

TY - JOUR AU - A. Mukherjee AU - S. Ghosh AU - S. Breuer AU - U. Jahn AU - L. Geelhaar AU - H. T. Grahn TI - Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 054308 PY - 2015/02/05