Dr. Lutz Geelhaar

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

@article{ author = { M. Musolino and D. v. Treeck and A. Tahraoui and L. Scarparo and C. De Santi and M. Meneghini and E. Zanoni and L. Geelhaar and H. Riechert }, title = { A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires }, journal = { Journal of Applied Physics }, volume = { 119 }, year = { 2016 }, pages = { 044502 } }

TY - JOUR AU - M. Musolino AU - D. v. Treeck AU - A. Tahraoui AU - L. Scarparo AU - C. De Santi AU - M. Meneghini AU - E. Zanoni AU - L. Geelhaar AU - H. Riechert TI - A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 119 SP - 044502 PY - 2016/01/27

Radial Stark effect in (In,Ga)N nanowires

@article{ author = { J. Lähnemann and P. Corfdir and F. Feix and J. Kamimura and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Radial Stark effect in (In,Ga)N nanowires }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 917 } }

TY - JOUR AU - J. Lähnemann AU - P. Corfdir AU - F. Feix AU - J. Kamimura AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Radial Stark effect in (In,Ga)N nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 917 PY - 2016/01/20

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

@article{ author = { J. K. Zettler and P. Corfdir and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 445604 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 26 SP - 445604 PY - 2015/10/12

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP15817-PRT }, year = { 2015 }, pages = { 113 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP15817-PRT SP - 113 PY - 2015/09/07

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

@article{ author = { T. Schumann and J. M. J. Lopes and J. M. Wofford and M.H. Oliveira Jr. and M. Dubslaff and M. Hanke and U. Jahn and L. Geelhaar and H. Riechert }, title = { The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 425 }, year = { 2015 }, pages = { 274 } }

TY - JOUR AU - T. Schumann AU - J. M. J. Lopes AU - J. M. Wofford AU - M.H. Oliveira Jr. AU - M. Dubslaff AU - M. Hanke AU - U. Jahn AU - L. Geelhaar AU - H. Riechert TI - The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 425 SP - 274 PY - 2015/09/01

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

@article{ author = { H. Li and L. Geelhaar and H. Riechert and C. Draxl }, title = { Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN }, journal = { Physical Review Letters }, volume = { 115 }, year = { 2015 }, pages = { 085503 } }

TY - JOUR AU - H. Li AU - L. Geelhaar AU - H. Riechert AU - C. Draxl TI - Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 115 SP - 085503 PY - 2015/08/21

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

@article{ author = { J. K. Zettler and C. Hauswald and P. Corfdir and M. Musolino and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4104 } }

TY - JOUR AU - J. K. Zettler AU - C. Hauswald AU - P. Corfdir AU - M. Musolino AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4104 PY - 2015/06/29

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 4289 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 4289 PY - 2015/06/09

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Electronic properties of axial InxGa1-xN insertions in GaN nanowires }, journal = { Journal of Computational Electronics }, volume = { 14 }, year = { 2015 }, pages = { 464 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Electronic properties of axial InxGa1-xN insertions in GaN nanowires JF - Journal of Computational Electronics JA - J. Comput. Electron. J1 - VL - 14 SP - 464 PY - 2015/06/01

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29