Dr. Lutz Geelhaar

Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction

@article{ author = { P. Schroth and M. Köhl and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and A. Biermanns and S. Bauer and S. Lazarev and U. Pietsch and T. Baumbach }, title = { Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction }, journal = { Physical Review Letters }, volume = { 114 }, year = { 2015 }, pages = { 055504 } }

TY - JOUR AU - P. Schroth AU - M. Köhl AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - A. Biermanns AU - S. Bauer AU - S. Lazarev AU - U. Pietsch AU - T. Baumbach TI - Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 114 SP - 055504 PY - 2015/02/05

Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates

@article{ author = { G. Bussone and H. Schäfer-Eberwein and E. Dimakis and A. Biermanns and D. Carbone and A. Tahraoui and L. Geelhaar and P. HaringBolívar and T. U. Schülli and U. Pietsch }, title = { Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 981 } }

TY - JOUR AU - G. Bussone AU - H. Schäfer-Eberwein AU - E. Dimakis AU - A. Biermanns AU - D. Carbone AU - A. Tahraoui AU - L. Geelhaar AU - P. HaringBolívar AU - T. U. Schülli AU - U. Pietsch TI - Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 981 PY - 2015/01/29

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

@article{ author = { O. Romanyuk and S. Fernández-Garrido and P. Jiricek and I. Bartos and L. Geelhaar and O. Brandt and T. Paskova }, title = { Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 021602 } }

TY - JOUR AU - O. Romanyuk AU - S. Fernández-Garrido AU - P. Jiricek AU - I. Bartos AU - L. Geelhaar AU - O. Brandt AU - T. Paskova TI - Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 021602 PY - 2015/01/12

Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

@article{ author = { M. Koehl and P. Schroth and A. A. Minkevich and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and T. Aschenbrenner and S. Lazarev and D. Grigoriev and U. Pietsch and T. Baumbach }, title = { Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction }, journal = { Journal of Synchrotron Radiation }, volume = { 22 }, year = { 2015 }, pages = { 67 } }

TY - JOUR AU - M. Koehl AU - P. Schroth AU - A. A. Minkevich AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - T. Aschenbrenner AU - S. Lazarev AU - D. Grigoriev AU - U. Pietsch AU - T. Baumbach TI - Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 22 SP - 67 PY - 2015/01/02

Si doping effects on (In,Ga)N nanowires

@article{ author = { J. Kamimura and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Si doping effects on (In,Ga)N nanowires }, journal = { Journal of Applied Physics }, volume = { 116 }, year = { 2014 }, pages = { 244310 } }

TY - JOUR AU - J. Kamimura AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Si doping effects on (In,Ga)N nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 116 SP - 244310 PY - 2014/12/30

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

@article{ author = { P. Corfdir and C. Hauswald and J. K. Zettler and T. Flissikowski and J. Lähnemann and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 195309 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - J. K. Zettler AU - T. Flissikowski AU - J. Lähnemann AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 195309 PY - 2014/11/18

Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111)

@article{ author = { A. Biermanns and E. Dimakis and Anton Davydok and Takkuo Sasaki and L. Geelhaar and Masamitu Takahasi and U. Pietsch }, title = { Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111) }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 6878 } }

TY - JOUR AU - A. Biermanns AU - E. Dimakis AU - Anton Davydok AU - Takkuo Sasaki AU - L. Geelhaar AU - Masamitu Takahasi AU - U. Pietsch TI - Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111) JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 6878 PY - 2014/11/16

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

@article{ author = { C. Somaschini and A. Biermanns and S. Bietti and G. Bussone and A. Trampert and S. Sanguinetti and H. Riechert and U. Pietsch and L. Geelhaar }, title = { Axial InAs/GaAs heterostructures on silicon in a nanowire geometry }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 485602 } }

TY - JOUR AU - C. Somaschini AU - A. Biermanns AU - S. Bietti AU - G. Bussone AU - A. Trampert AU - S. Sanguinetti AU - H. Riechert AU - U. Pietsch AU - L. Geelhaar TI - Axial InAs/GaAs heterostructures on silicon in a nanowire geometry JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 485602 PY - 2014/11/13

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and C. Hauswald and B. Jenichen and M. Ramsteiner and V. Consonni and L. Geelhaar and O. Brandt }, title = { Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 455702 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - C. Hauswald AU - B. Jenichen AU - M. Ramsteiner AU - V. Consonni AU - L. Geelhaar AU - O. Brandt TI - Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 455702 PY - 2014/10/20

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165304 PY - 2014/10/08