Dr. Lutz Geelhaar

High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

@article{ author = { B. Park and J. K. Lee and C. T. Koch and M. Wölz and L. Geelhaar and S. H. Oh }, title = { High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures }, journal = { Advanced Science }, volume = { xx }, year = { 2022 }, pages = { xx } }

TY - JOUR AU - B. Park AU - J. K. Lee AU - C. T. Koch AU - M. Wölz AU - L. Geelhaar AU - S. H. Oh TI - High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures JF - Advanced Science JA - J1 - VL - xx SP - xx PY - 2022/06/05

In situ x-ray analysis of misfit strain and curvature of bent polytypic GaAs–InxGa1−xAs core–shell nanowires

@article{ author = { M. Al-Humaidi and L. Feigl and J. Jakob and P. Schroth and A. AlHassan and A. Davtyan and J. Herranz and T. Anjum and D. Novikov and S. Francoual and L. Geelhaar and T. Baumbach and U. Pietsch }, title = { In situ x-ray analysis of misfit strain and curvature of bent polytypic GaAs–InxGa1−xAs core–shell nanowires }, journal = { Nanotechnology }, volume = { 33 }, year = { 2021 }, pages = { 015601 } }

TY - JOUR AU - M. Al-Humaidi AU - L. Feigl AU - J. Jakob AU - P. Schroth AU - A. AlHassan AU - A. Davtyan AU - J. Herranz AU - T. Anjum AU - D. Novikov AU - S. Francoual AU - L. Geelhaar AU - T. Baumbach AU - U. Pietsch TI - In situ x-ray analysis of misfit strain and curvature of bent polytypic GaAs–InxGa1−xAs core–shell nanowires JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 33 SP - 015601 PY - 2021/10/20

Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells

@article{ author = { Hanno Küpers and Ryan B. Lewis and Pierre Corfdir and Michael Niehle and T. Flissikowski and H. T. Grahn and A. Trampert and O. Brandt and L. Geelhaar }, title = { Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 50220 } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - Pierre Corfdir AU - Michael Niehle AU - T. Flissikowski AU - H. T. Grahn AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 50220 PY - 2021/10/13

Impact of electrical current on single GaAs nanowire structure

@article{ author = { D. Bahrami and A. Al Hassan and A. Davtyan and R. Zhe and T. Anjum and J. Herranz and L. Geelhaar and D. V. Novikov and R. Timm and U. Pietsch }, title = { Impact of electrical current on single GaAs nanowire structure }, journal = { Physica Status Solidi B }, volume = { 258 }, year = { 2021 }, pages = { 2100056 } }

TY - JOUR AU - D. Bahrami AU - A. Al Hassan AU - A. Davtyan AU - R. Zhe AU - T. Anjum AU - J. Herranz AU - L. Geelhaar AU - D. V. Novikov AU - R. Timm AU - U. Pietsch TI - Impact of electrical current on single GaAs nanowire structure JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 258 SP - 2100056 PY - 2021/05/20

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 1718 } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 1718 PY - 2021/05/12

Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction

@article{ author = { A. Al Hassan and W. A. Salehi and R. B. Lewis and T. Anjum and C. Sternemann and L. Geelhaar and U. Pietsch }, title = { Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction }, journal = { Nanotechnology }, volume = { 32 }, year = { 2021 }, pages = { 205705 } }

TY - JOUR AU - A. Al Hassan AU - W. A. Salehi AU - R. B. Lewis AU - T. Anjum AU - C. Sternemann AU - L. Geelhaar AU - U. Pietsch TI - Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 32 SP - 205705 PY - 2021/03/26

Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

@article{ author = { L. Jaloustre and S. Le-Denmat and T. Auzelle and M. Azadmand and L. Geelhaar and F. Dahlem and R. Songmuang }, title = { Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires }, journal = { ACS Applied Nano Materials }, volume = { 4 }, year = { 2021 }, pages = { 43 } }

TY - JOUR AU - L. Jaloustre AU - S. Le-Denmat AU - T. Auzelle AU - M. Azadmand AU - L. Geelhaar AU - F. Dahlem AU - R. Songmuang TI - Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 4 SP - 43 PY - 2021/01/01

Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers

@article{ author = { J. Kamimura and M. Budde and P. Bogdanoff and C. Tschammer and F. F. Abdi and R. van de Krol and O. Bierwagen and H. Riechert and L. Geelhaar }, title = { Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers }, journal = { Solar RRL }, volume = { 4 }, year = { 2020 }, pages = { 2000568 } }

TY - JOUR AU - J. Kamimura AU - M. Budde AU - P. Bogdanoff AU - C. Tschammer AU - F. F. Abdi AU - R. van de Krol AU - O. Bierwagen AU - H. Riechert AU - L. Geelhaar TI - Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers JF - Solar RRL JA - Sol. RRL J1 - xxx VL - 4 SP - 2000568 PY - 2020/10/21

X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

@article{ author = { A. Davtyan and D. Kriegner and V. Holý and A. AlHassan and R.B. Lewis and S. McDermott and L. Geelhaar and D. Bahrami and T. Anjum and Z. Ren and C. Richter and D. Novikov and J. Müller and B. Butz and U. Pietsch }, title = { X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires }, journal = { Journal of Applied Crystallography }, volume = { 53 }, year = { 2020 }, pages = { 1310 } }

TY - JOUR AU - A. Davtyan AU - D. Kriegner AU - V. Holý AU - A. AlHassan AU - R.B. Lewis AU - S. McDermott AU - L. Geelhaar AU - D. Bahrami AU - T. Anjum AU - Z. Ren AU - C. Richter AU - D. Novikov AU - J. Müller AU - B. Butz AU - U. Pietsch TI - X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 53 SP - 1310 PY - 2020/09/23

Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure

@article{ author = { Y. Zhao and Z. Xing and L. Geelhaar and J. Zhang and W. Yang and T. Auzelle and Y. Wu and L. Bian and S. Lu }, title = { Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 9943 } }

TY - JOUR AU - Y. Zhao AU - Z. Xing AU - L. Geelhaar AU - J. Zhang AU - W. Yang AU - T. Auzelle AU - Y. Wu AU - L. Bian AU - S. Lu TI - Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 9943 PY - 2020/09/23