Dr. Lutz Geelhaar

Predictive model for the temporal evolution of the shape of GaAs nanowires

@article{ author = { Hanno Küpers and Ryan B. Lewis and L. Geelhaar }, title = { Predictive model for the temporal evolution of the shape of GaAs nanowires }, journal = { Journal of Crystal Growth }, volume = { xxx }, year = { 2019 }, pages = { xxx } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - L. Geelhaar TI - Predictive model for the temporal evolution of the shape of GaAs nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - xxx SP - xxx PY - 2019/11/30

Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence

@article{ author = { Samuel D. Seddon and Christopher Benjamin and James I. Bryant and Christopher W. Burrows and Marc Walker and Graham Matheson and J. Herranz and L. Geelhaar and Gavin R. Bell }, title = { Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence }, journal = { Physical Chemistry Chemical Physics }, volume = { 21 }, year = { 2019 }, pages = { 24666 } }

TY - JOUR AU - Samuel D. Seddon AU - Christopher Benjamin AU - James I. Bryant AU - Christopher W. Burrows AU - Marc Walker AU - Graham Matheson AU - J. Herranz AU - L. Geelhaar AU - Gavin R. Bell TI - Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence JF - Physical Chemistry Chemical Physics JA - Phys. Chem. Chem. Phys. J1 - VL - 21 SP - 24666 PY - 2019/11/01

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { Ryan B. Lewis and A. Trampert and E. Luna and J. Herranz and Carsten Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - Ryan B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - Carsten Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé Vílchez and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé Vílchez AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Axial GaAs/Ga(As,Bi) nanowire heterostructures

@article{ author = { M. Oliva and G. Gao and E. Luna and L. Geelhaar and R. B. Lewis }, title = { Axial GaAs/Ga(As,Bi) nanowire heterostructures }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 425601 } }

TY - JOUR AU - M. Oliva AU - G. Gao AU - E. Luna AU - L. Geelhaar AU - R. B. Lewis TI - Axial GaAs/Ga(As,Bi) nanowire heterostructures JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 425601 PY - 2019/08/02

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

@article{ author = { F. Bastiman and H. Küpers and C. Somaschini and V.G. Dubrovskii and L. Geelhaar }, title = { Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 073401 } }

TY - JOUR AU - F. Bastiman AU - H. Küpers AU - C. Somaschini AU - V.G. Dubrovskii AU - L. Geelhaar TI - Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - 2475-9953 VL - 3 SP - 073401 PY - 2019/07/09

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

@article{ author = { D. v. Treeck and J. Ledig and G. Scholz and J. Lähnemann and M. Musolino and A. Tahraoui and O. Brandt and A. Waag and H. Riechert and L. Geelhaar }, title = { Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble }, journal = { Beilstein Journal of Nanotechnology }, volume = { 10 }, year = { 2019 }, pages = { 1177 } }

TY - JOUR AU - D. v. Treeck AU - J. Ledig AU - G. Scholz AU - J. Lähnemann AU - M. Musolino AU - A. Tahraoui AU - O. Brandt AU - A. Waag AU - H. Riechert AU - L. Geelhaar TI - Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble JF - Beilstein Journal of Nanotechnology JA - Beilstein J. Nanotechnol. J1 - VL - 10 SP - 1177 PY - 2019/06/05

Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires

@article{ author = { Philipp Schroth and Mahmoud Al Humaidi and Ludwig Feigl and Julian Jakob and Ali Al Hassan and Arman Davtyan and Hanno Küpers and A. Tahraoui and L. Geelhaar and Ullrich Pietsch and Tilo Baumbach }, title = { Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4263 } }

TY - JOUR AU - Philipp Schroth AU - Mahmoud Al Humaidi AU - Ludwig Feigl AU - Julian Jakob AU - Ali Al Hassan AU - Arman Davtyan AU - Hanno Küpers AU - A. Tahraoui AU - L. Geelhaar AU - Ullrich Pietsch AU - Tilo Baumbach TI - Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4263 PY - 2019/05/31

Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells

@article{ author = { J. Lähnemann and M. O. Hill and J. Herranz and O. Marquardt and G. Gao and A. Al Hassan and A. Davtyan and S. O. Hruszkewycz and M. V. Holt and C. Huang and I. Calvo-Almazán and U. Jahn and U. Pietsch and L. J. Lauhon and L. Geelhaar }, title = { Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4448 } }

TY - JOUR AU - J. Lähnemann AU - M. O. Hill AU - J. Herranz AU - O. Marquardt AU - G. Gao AU - A. Al Hassan AU - A. Davtyan AU - S. O. Hruszkewycz AU - M. V. Holt AU - C. Huang AU - I. Calvo-Almazán AU - U. Jahn AU - U. Pietsch AU - L. J. Lauhon AU - L. Geelhaar TI - Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4448 PY - 2019/05/29

Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene

@article{ author = { L. Mancini and M. Morassi and C. Sinito and O. Brandt and L. Geelhaar and H.G. Song and Y.H. Cho and N. Guan and A. Madouri and C. Barbier and L. Largeau and A. Babichev and F.H. Julien and L. Travers and F. Oehler and N. Gogneau and J.C. Harmand and M. Tchernycheva }, title = { Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 214005 } }

TY - JOUR AU - L. Mancini AU - M. Morassi AU - C. Sinito AU - O. Brandt AU - L. Geelhaar AU - H.G. Song AU - Y.H. Cho AU - N. Guan AU - A. Madouri AU - C. Barbier AU - L. Largeau AU - A. Babichev AU - F.H. Julien AU - L. Travers AU - F. Oehler AU - N. Gogneau AU - J.C. Harmand AU - M. Tchernycheva TI - Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 214005 PY - 2019/03/14