Dr. Lutz Geelhaar

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. v. Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. v. Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

@article{ author = { A. AlHassan and J. Lähnemann and S. Leake and H. Küpers and M. Niehle and D. Bahrami and F. Bertram and R. B. Lewis and A. Davtyan and T. U. Schülli and L. Geelhaar and U. Pietsch }, title = { Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry }, journal = { Nanotechnology }, volume = { 31 }, year = { 2020 }, pages = { 214002 } }

TY - JOUR AU - A. AlHassan AU - J. Lähnemann AU - S. Leake AU - H. Küpers AU - M. Niehle AU - D. Bahrami AU - F. Bertram AU - R. B. Lewis AU - A. Davtyan AU - T. U. Schülli AU - L. Geelhaar AU - U. Pietsch TI - Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 31 SP - 214002 PY - 2020/03/10

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

@article{ author = { D. v. Treeck and Sergio Fernández-Garrido and L. Geelhaar }, title = { Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 013404 } }

TY - JOUR AU - D. v. Treeck AU - Sergio Fernández-Garrido AU - L. Geelhaar TI - Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 013404 PY - 2020/01/27

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence

@article{ author = { Samuel D. Seddon and Christopher Benjamin and James I. Bryant and Christopher W. Burrows and Marc Walker and Graham Matheson and J. Herranz and L. Geelhaar and Gavin R. Bell }, title = { Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence }, journal = { Physical Chemistry Chemical Physics }, volume = { 21 }, year = { 2019 }, pages = { 24666 } }

TY - JOUR AU - Samuel D. Seddon AU - Christopher Benjamin AU - James I. Bryant AU - Christopher W. Burrows AU - Marc Walker AU - Graham Matheson AU - J. Herranz AU - L. Geelhaar AU - Gavin R. Bell TI - Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence JF - Physical Chemistry Chemical Physics JA - Phys. Chem. Chem. Phys. J1 - VL - 21 SP - 24666 PY - 2019/11/01

Predictive model for the temporal evolution of the shape of GaAs nanowires

@article{ author = { Hanno Küpers and Ryan B. Lewis and L. Geelhaar }, title = { Predictive model for the temporal evolution of the shape of GaAs nanowires }, journal = { Journal of Crystal Growth }, volume = { 531 }, year = { 2019 }, pages = { 125320 } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - L. Geelhaar TI - Predictive model for the temporal evolution of the shape of GaAs nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 531 SP - 125320 PY - 2019/10/30

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { Ryan B. Lewis and A. Trampert and E. Luna and J. Herranz and Carsten Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - Ryan B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - Carsten Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé Vílchez and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé Vílchez AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Axial GaAs/Ga(As,Bi) nanowire heterostructures

@article{ author = { M. Oliva and G. Gao and E. Luna and L. Geelhaar and R. B. Lewis }, title = { Axial GaAs/Ga(As,Bi) nanowire heterostructures }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 425601 } }

TY - JOUR AU - M. Oliva AU - G. Gao AU - E. Luna AU - L. Geelhaar AU - R. B. Lewis TI - Axial GaAs/Ga(As,Bi) nanowire heterostructures JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 425601 PY - 2019/08/02