Dr. Oliver Bierwagen

The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications

@article{ author = { O. Bierwagen and Z. Galazka }, title = { The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 092105 } }

TY - JOUR AU - O. Bierwagen AU - Z. Galazka TI - The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 092105 PY - 2018/02/27

Electronic and transport properties of Li-doped NiO epitaxial thin films

@article{ author = { J. Y. Zhang and W. W. Li and R. L. Z. Hoye and J. L. MacManus-Driscoll and M. Budde and O. Bierwagen and L. Wang and Y. Du and M. J. Wahila and L. F. J. Piper and T.-L. Lee and H. J. Edwards and V. R. Dhanak and K. H. L. Zhang }, title = { Electronic and transport properties of Li-doped NiO epitaxial thin films }, journal = { Journal of Materials Chemistry C }, volume = { 6 }, year = { 2018 }, pages = { 2275 } }

TY - JOUR AU - J. Y. Zhang AU - W. W. Li AU - R. L. Z. Hoye AU - J. L. MacManus-Driscoll AU - M. Budde AU - O. Bierwagen AU - L. Wang AU - Y. Du AU - M. J. Wahila AU - L. F. J. Piper AU - T.-L. Lee AU - H. J. Edwards AU - V. R. Dhanak AU - K. H. L. Zhang TI - Electronic and transport properties of Li-doped NiO epitaxial thin films JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 6 SP - 2275 PY - 2018/01/25

Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces

@article{ author = { T. Berthold and S. Katzer and J. Rombach and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces }, journal = { Physica Status Solidi B }, volume = { 255 }, year = { 2018 }, pages = { 1700324 } }

TY - JOUR AU - T. Berthold AU - S. Katzer AU - J. Rombach AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 255 SP - 1700324 PY - 2018/01/01

Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

@article{ author = { A. Papadogianni and L. Kirste and O. Bierwagen }, title = { Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 262103 } }

TY - JOUR AU - A. Papadogianni AU - L. Kirste AU - O. Bierwagen TI - Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 262103 PY - 2017/12/27

Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

@article{ author = { P. Vogt and O. Brandt and H. Riechert and J. Lähnemann and O. Bierwagen }, title = { Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 196001 } }

TY - JOUR AU - P. Vogt AU - O. Brandt AU - H. Riechert AU - J. Lähnemann AU - O. Bierwagen TI - Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 196001 PY - 2017/11/07

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

@article{ author = { J.-B. Barakat and S. Dadgostar and K. Hestroffer and O. Bierwagen and A. Trampert and F. Hatami }, title = { Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { tbd }, year = { 2017 }, pages = { tbd } }

TY - JOUR AU - J.-B. Barakat AU - S. Dadgostar AU - K. Hestroffer AU - O. Bierwagen AU - A. Trampert AU - F. Hatami TI - Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - tbd SP - tbd PY - 2017/02/22

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

@article{ author = { T. Berthold and J. Rombach and T. Stauden and V. Polyakov and V. Cimalla and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces }, journal = { Journal of Applied Physics }, volume = { 120 }, year = { 2016 }, pages = { 245301 } }

TY - JOUR AU - T. Berthold AU - J. Rombach AU - T. Stauden AU - V. Polyakov AU - V. Cimalla AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 120 SP - 245301 PY - 2016/12/22

Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and M. Imura and S. Ueda and H. Yoshikawa and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals }, journal = { Applied Physics Express }, volume = { 10 }, year = { 2016 }, pages = { 011102 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - M. Imura AU - S. Ueda AU - H. Yoshikawa AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 10 SP - 011102 PY - 2016/12/13

Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films

@article{ author = { T. C. Kaspar and P. V. Sushko and M. E. Bowden and S. M. Heald and A. Papadogianni and C. Tschammer and O. Bierwagen and S. A. Chambers }, title = { Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155409 } }

TY - JOUR AU - T. C. Kaspar AU - P. V. Sushko AU - M. E. Bowden AU - S. M. Heald AU - A. Papadogianni AU - C. Tschammer AU - O. Bierwagen AU - S. A. Chambers TI - Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 94 SP - 155409 PY - 2016/10/07