Dr. Oliver Bierwagen

Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

@article{ author = { M.V. Frischbier and H.F. Wardenga and M. Weidner and O. Bierwagen and J. Jia and Y. Shigesato and A. Klein }, title = { Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films }, journal = { Thin Solid Films }, volume = { 614 }, year = { 2016 }, pages = { 62 } }

TY - JOUR AU - M.V. Frischbier AU - H.F. Wardenga AU - M. Weidner AU - O. Bierwagen AU - J. Jia AU - Y. Shigesato AU - A. Klein TI - Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 614 SP - 62 PY - 2016/03/11

Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces

@article{ author = { O. Bierwagen and J. Rombach and J.S. Speck }, title = { Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces }, journal = { Journal of Physics: Condensed Matter }, volume = { 28 }, year = { 2016 }, pages = { 224006 } }

TY - JOUR AU - O. Bierwagen AU - J. Rombach AU - J.S. Speck TI - Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 28 SP - 224006 PY - 2016/03/08

Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

@article{ author = { P. Vogt and O. Bierwagen }, title = { Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption }, journal = { Applied Physics Letters }, volume = { 108 }, year = { 2016 }, pages = { 072101 } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 108 SP - 072101 PY - 2016/02/17

Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band-nonparabolicity, and Burstein-Moss shift

@article{ author = { M. Feneberg and J. Nixdorf and C. Lidig and R. Goldhahn and Z. Galazka and O. Bierwagen and J.S. Speck }, title = { Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band-nonparabolicity, and Burstein-Moss shift }, journal = { Physical Review B: Solid State }, volume = { 93 }, year = { 2016 }, pages = { 045203 } }

TY - JOUR AU - M. Feneberg AU - J. Nixdorf AU - C. Lidig AU - R. Goldhahn AU - Z. Galazka AU - O. Bierwagen AU - J.S. Speck TI - Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band-nonparabolicity, and Burstein-Moss shift JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 93 SP - 045203 PY - 2016/01/07

Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films

@article{ author = { A. Papadogianni and M.E. White and J.S.Speck and Z. Galazka and O. Bierwagen }, title = { Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 252105 } }

TY - JOUR AU - A. Papadogianni AU - M.E. White AU - J.S.Speck AU - Z. Galazka AU - O. Bierwagen TI - Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 252105 PY - 2015/12/24

Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface

@article{ author = { J. Rombach and O. Bierwagen and A. Papadogianni and M. Mischo and V. Cimalla and T. Berthold and S. Krischok and M. Himmerlich }, title = { Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface }, journal = { Procedia Engineering }, volume = { 120 }, year = { 2015 }, pages = { 79 } }

TY - JOUR AU - J. Rombach AU - O. Bierwagen AU - A. Papadogianni AU - M. Mischo AU - V. Cimalla AU - T. Berthold AU - S. Krischok AU - M. Himmerlich TI - Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface JF - Procedia Engineering JA - Procedia Eng. J1 - VL - 120 SP - 79 PY - 2015/09/16

Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

@article{ author = { M.Y. Tsai and O. Bierwagen and J.S. Speck }, title = { Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes }, journal = { Thin Solid Films }, volume = { 605 }, year = { 2015 }, pages = { 186 } }

TY - JOUR AU - M.Y. Tsai AU - O. Bierwagen AU - J.S. Speck TI - Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 605 SP - 186 PY - 2015/09/16

Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

@article{ author = { K. H. L. Zhang and Y. Du and A. Papadogianni and O. Bierwagen and S. Sallis and L. F. J. Piper and M. E. Bowden and V. Shutthanandan and P. V. Sushko and S. A. Chambers }, title = { Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide }, journal = { Advanced Materials }, volume = { 27 }, year = { 2015 }, pages = { 5191 } }

TY - JOUR AU - K. H. L. Zhang AU - Y. Du AU - A. Papadogianni AU - O. Bierwagen AU - S. Sallis AU - L. F. J. Piper AU - M. E. Bowden AU - V. Shutthanandan AU - P. V. Sushko AU - S. A. Chambers TI - Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide JF - Advanced Materials JA - Adv. Mater. J1 - VL - 27 SP - 5191 PY - 2015/08/06

Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

@article{ author = { Y. Takagaki and A. Papadogianni and B. Jenichen and U. Jahn and O. Bierwagen }, title = { Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates }, journal = { Thin Solid Films }, volume = { 580 }, year = { 2015 }, pages = { 89 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - B. Jenichen AU - U. Jahn AU - O. Bierwagen TI - Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 580 SP - 89 PY - 2015/03/30

Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers

@article{ author = { Y. Takagaki and A. Papadogianni and O. Bierwagen }, title = { Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers }, journal = { Advanced Electronic Materials }, volume = { 1 }, year = { 2015 }, pages = { 1400007 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - O. Bierwagen TI - Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers JF - Advanced Electronic Materials JA - Adv. Electron. Mater. J1 - Online ISSN: 2199-160X VL - 1 SP - 1400007 PY - 2015/03/10