Dr. Oliver Bierwagen

Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

@article{ author = { K. H. L. Zhang and Y. Du and A. Papadogianni and O. Bierwagen and S. Sallis and L. F. J. Piper and M. E. Bowden and V. Shutthanandan and P. V. Sushko and S. A. Chambers }, title = { Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide }, journal = { Advanced Materials }, volume = { 27 }, year = { 2015 }, pages = { 5191 } }

TY - JOUR AU - K. H. L. Zhang AU - Y. Du AU - A. Papadogianni AU - O. Bierwagen AU - S. Sallis AU - L. F. J. Piper AU - M. E. Bowden AU - V. Shutthanandan AU - P. V. Sushko AU - S. A. Chambers TI - Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide JF - Advanced Materials JA - Adv. Mater. J1 - VL - 27 SP - 5191 PY - 2015/08/06

Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

@article{ author = { Y. Takagaki and A. Papadogianni and B. Jenichen and U. Jahn and O. Bierwagen }, title = { Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates }, journal = { Thin Solid Films }, volume = { 580 }, year = { 2015 }, pages = { 89 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - B. Jenichen AU - U. Jahn AU - O. Bierwagen TI - Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 580 SP - 89 PY - 2015/03/30

Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers

@article{ author = { Y. Takagaki and A. Papadogianni and O. Bierwagen }, title = { Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers }, journal = { Advanced Electronic Materials }, volume = { 1 }, year = { 2015 }, pages = { 1400007 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - O. Bierwagen TI - Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers JF - Advanced Electronic Materials JA - Adv. Electron. Mater. J1 - Online ISSN: 2199-160X VL - 1 SP - 1400007 PY - 2015/03/10

Domain matching epitaxy of cubic In2O3 on r-plane sapphire

@article{ author = { P. Vogt and A. Trampert and M. Ramsteiner and O. Bierwagen }, title = { Domain matching epitaxy of cubic In2O3 on r-plane sapphire }, journal = { Physica Status Solidi A }, volume = { 7 }, year = { 2015 }, pages = { 1433 } }

TY - JOUR AU - P. Vogt AU - A. Trampert AU - M. Ramsteiner AU - O. Bierwagen TI - Domain matching epitaxy of cubic In2O3 on r-plane sapphire JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 7 SP - 1433 PY - 2015/03/05

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

@article{ author = { P. Vogt and O. Bierwagen }, title = { The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 081910 } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 081910 PY - 2015/02/25

Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications

@article{ author = { O. Bierwagen }, title = { Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024001 } }

TY - JOUR AU - O. Bierwagen TI - Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024001 PY - 2015/01/19

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and M. E. White and J. S. Speck and Z. Galazka and H. Liu and N. Izyumskaya and V. Avrutin and U. Ozgur and H. Morkoc }, title = { Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024011 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - Z. Galazka AU - H. Liu AU - N. Izyumskaya AU - V. Avrutin AU - U. Ozgur AU - H. Morkoc TI - Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024011 PY - 2015/01/19

Compensating vacancy defects in Sn- and Mg-doped In2O3

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and J. S. Speck and Z. Galazka }, title = { Compensating vacancy defects in Sn- and Mg-doped In2O3 }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 245307 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - J. S. Speck AU - Z. Galazka TI - Compensating vacancy defects in Sn- and Mg-doped In2O3 JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 90 SP - 245307 PY - 2014/12/29

Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001)

@article{ author = { R. Schewski and G. Wagner and M. Baldini and D. Gogova and Z. Galazka and T. Schulz and T. Remmele and T. Markurt and H. von Wenckstern and M. Grundmann and O. Bierwagen and P. Vogt and M. Albrecht }, title = { Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) }, journal = { Applied Physics Express }, volume = { 8 }, year = { 2014 }, pages = { 011101 } }

TY - JOUR AU - R. Schewski AU - G. Wagner AU - M. Baldini AU - D. Gogova AU - Z. Galazka AU - T. Schulz AU - T. Remmele AU - T. Markurt AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen AU - P. Vogt AU - M. Albrecht TI - Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 8 SP - 011101 PY - 2014/12/12

Valence-band density of states and surface electron accumulation in epitaxial SnO2 films

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and J. J. Mudd and D. O. Scanlon and G. W. Watson and O. Bierwagen and M. E. White and J. S. Speck and C. F. McConville }, title = { Valence-band density of states and surface electron accumulation in epitaxial SnO2 films }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 155413 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - J. J. Mudd AU - D. O. Scanlon AU - G. W. Watson AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - C. F. McConville TI - Valence-band density of states and surface electron accumulation in epitaxial SnO2 films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 90 SP - 155413 PY - 2014/10/08