Dr. Oliver Bierwagen

Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications

@article{ author = { O. Bierwagen }, title = { Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024001 } }

TY - JOUR AU - O. Bierwagen TI - Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024001 PY - 2015/01/19

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and M. E. White and J. S. Speck and Z. Galazka and H. Liu and N. Izyumskaya and V. Avrutin and U. Ozgur and H. Morkoc }, title = { Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024011 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - Z. Galazka AU - H. Liu AU - N. Izyumskaya AU - V. Avrutin AU - U. Ozgur AU - H. Morkoc TI - Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024011 PY - 2015/01/19

Compensating vacancy defects in Sn- and Mg-doped In2O3

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and J. S. Speck and Z. Galazka }, title = { Compensating vacancy defects in Sn- and Mg-doped In2O3 }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 245307 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - J. S. Speck AU - Z. Galazka TI - Compensating vacancy defects in Sn- and Mg-doped In2O3 JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 245307 PY - 2014/12/29

Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001)

@article{ author = { R. Schewski and G. Wagner and M. Baldini and D. Gogova and Z. Galazka and T. Schulz and T. Remmele and T. Markurt and H. von Wenckstern and M. Grundmann and O. Bierwagen and P. Vogt and M. Albrecht }, title = { Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) }, journal = { Applied Physics Express }, volume = { 8 }, year = { 2014 }, pages = { 011101 } }

TY - JOUR AU - R. Schewski AU - G. Wagner AU - M. Baldini AU - D. Gogova AU - Z. Galazka AU - T. Schulz AU - T. Remmele AU - T. Markurt AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen AU - P. Vogt AU - M. Albrecht TI - Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 8 SP - 011101 PY - 2014/12/12

Valence-band density of states and surface electron accumulation in epitaxial SnO2 films

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and J. J. Mudd and D. O. Scanlon and G. W. Watson and O. Bierwagen and M. E. White and J. S. Speck and C. F. McConville }, title = { Valence-band density of states and surface electron accumulation in epitaxial SnO2 films }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 155413 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - J. J. Mudd AU - D. O. Scanlon AU - G. W. Watson AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - C. F. McConville TI - Valence-band density of states and surface electron accumulation in epitaxial SnO2 films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 155413 PY - 2014/10/08

In situ observation of epitaxial Li-Si-nanostructure formation on Si(111)

@article{ author = { F. Grosse and A. Proessdorf and M. Hanke and O. Bierwagen }, title = { In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) }, journal = { Journal of Physical Chemistry C }, volume = { 118 }, year = { 2014 }, pages = { 21572 } }

TY - JOUR AU - F. Grosse AU - A. Proessdorf AU - M. Hanke AU - O. Bierwagen TI - In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 118 SP - 21572 PY - 2014/08/28

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

Schottky contacts to In₂O₃

@article{ author = { H. von Wenckstern and D. Splith and F. Schmidt and M. Grundmann and O. Bierwagen and J. S. Speck }, title = { Schottky contacts to In₂O₃ }, journal = { APL Materials }, volume = { 2 }, year = { 2014 }, pages = { 046104 } }

TY - JOUR AU - H. von Wenckstern AU - D. Splith AU - F. Schmidt AU - M. Grundmann AU - O. Bierwagen AU - J. S. Speck TI - Schottky contacts to In₂O₃ JF - APL Materials JA - APL Mater. J1 - APLM VL - 2 SP - 046104 PY - 2014/04/04

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

@article{ author = { K. Watanabe and T. Ohsawa and I. Sakaguchi and O. Bierwagen and M.E. White and M.Y. Tsai and R. Takahashi and E.M. Ross and Y. Adachi and J. S. Speck and H. Haneda and N. Ohashi }, title = { Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions }, journal = { Applied Physics Letters }, volume = { 104 }, year = { 2014 }, pages = { 132110 } }

TY - JOUR AU - K. Watanabe AU - T. Ohsawa AU - I. Sakaguchi AU - O. Bierwagen AU - M.E. White AU - M.Y. Tsai AU - R. Takahashi AU - E.M. Ross AU - Y. Adachi AU - J. S. Speck AU - H. Haneda AU - N. Ohashi TI - Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 104 SP - 132110 PY - 2014/04/03

Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry

@article{ author = { M. Feneberg and C. Lidig and K. Lange and M. E. White and M.-Y. Tsai and J. S. Speck and O. Bierwagen and R. Goldhahn }, title = { Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 82 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - K. Lange AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck AU - O. Bierwagen AU - R. Goldhahn TI - Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 82 PY - 2014/01/22