Dr. Oliver Bierwagen

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

@article{ author = { K. Watanabe and T. Ohsawa and I. Sakaguchi and O. Bierwagen and M.E. White and M.Y. Tsai and R. Takahashi and E.M. Ross and Y. Adachi and J. S. Speck and H. Haneda and N. Ohashi }, title = { Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions }, journal = { Applied Physics Letters }, volume = { 104 }, year = { 2014 }, pages = { 132110 } }

TY - JOUR AU - K. Watanabe AU - T. Ohsawa AU - I. Sakaguchi AU - O. Bierwagen AU - M.E. White AU - M.Y. Tsai AU - R. Takahashi AU - E.M. Ross AU - Y. Adachi AU - J. S. Speck AU - H. Haneda AU - N. Ohashi TI - Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 104 SP - 132110 PY - 2014/04/03

Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry

@article{ author = { M. Feneberg and C. Lidig and K. Lange and M. E. White and M.-Y. Tsai and J. S. Speck and O. Bierwagen and R. Goldhahn }, title = { Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 82 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - K. Lange AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck AU - O. Bierwagen AU - R. Goldhahn TI - Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 82 PY - 2014/01/22

Effect of heavy Ga doping on defect structure of SnO₂ layers

@article{ author = { A. Mogilatenko and H. Kirmse and O. Bierwagen and M. Schmidbauer and M.-Y. Tsai and I. Häusler and M. E. White and J. S. Speck }, title = { Effect of heavy Ga doping on defect structure of SnO₂ layers }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 87 } }

TY - JOUR AU - A. Mogilatenko AU - H. Kirmse AU - O. Bierwagen AU - M. Schmidbauer AU - M.-Y. Tsai AU - I. Häusler AU - M. E. White AU - J. S. Speck TI - Effect of heavy Ga doping on defect structure of SnO₂ layers JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 87 PY - 2014/01/21

Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation

@article{ author = { O. Bierwagen and J. S. Speck }, title = { Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 48 } }

TY - JOUR AU - O. Bierwagen AU - J. S. Speck TI - Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 48 PY - 2014/01/20

Preface: Emerging Oxide Semiconductors

@article{ author = { O. Bierwagen and S.F. Fischer }, title = { Preface: Emerging Oxide Semiconductors }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 19 } }

TY - JOUR AU - O. Bierwagen AU - S.F. Fischer TI - Preface: Emerging Oxide Semiconductors JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 19 PY - 2014/01/01

MBE of transparent semiconducting oxides

@article{ author = { O. Bierwagen and M. E. White and M.-Y. Tsai and J. S. Speck }, title = { MBE of transparent semiconducting oxides }, journal = { Molecular Beam Epitaxy: From Research to Mass Production; edited by M. Henini (Elsevier science and technology, 2012) }, volume = { }, year = { 2013 }, pages = { 347 } }

TY - JOUR AU - O. Bierwagen AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck TI - MBE of transparent semiconducting oxides JF - Molecular Beam Epitaxy: From Research to Mass Production; edited by M. Henini (Elsevier science and technology, 2012) JA - MBE: From Research to Mass Production J1 - VL - SP - 347 PY - 2013/01/01

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films

@article{ author = { N. Preissler and O. Bierwagen and A. T. Ramu and J. S. Speck }, title = { Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films }, journal = { Physical Review B: Solid State }, volume = { 88 }, year = { 2013 }, pages = { 085305 } }

TY - JOUR AU - N. Preissler AU - O. Bierwagen AU - A. T. Ramu AU - J. S. Speck TI - Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In₂O₃ films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 88 SP - 085305 PY - 2013/01/01

Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon

@article{ author = { O. Bierwagen and A. Proessdorf and M. Niehle and F. Grosse and A. Trampert and M. Klingsporn }, title = { Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon }, journal = { Crystal Growth & Design }, volume = { 13 }, year = { 2013 }, pages = { 3645 } }

TY - JOUR AU - O. Bierwagen AU - A. Proessdorf AU - M. Niehle AU - F. Grosse AU - A. Trampert AU - M. Klingsporn TI - Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 13 SP - 3645 PY - 2013/01/01

Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by in vivo x-ray diffraction

@article{ author = { M. Hanke and V. M. Kaganer and O. Bierwagen and M. Niehle and A. Trampert }, title = { Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 203 } }

TY - JOUR AU - M. Hanke AU - V. M. Kaganer AU - O. Bierwagen AU - M. Niehle AU - A. Trampert TI - Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 203 PY - 2012/01/01

Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films

@article{ author = { C. A. Hurni and S. J. Choi and O. Bierwagen and J. S. Speck }, title = { Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 082106 } }

TY - JOUR AU - C. A. Hurni AU - S. J. Choi AU - O. Bierwagen AU - J. S. Speck TI - Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 082106 PY - 2012/01/01