Dr. Oliver Bierwagen

Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon

@article{ author = { O. Bierwagen and A. Proessdorf and M. Niehle and F. Grosse and A. Trampert and M. Klingsporn }, title = { Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon }, journal = { Crystal Growth & Design }, volume = { 13 }, year = { 2013 }, pages = { 3645 } }

TY - JOUR AU - O. Bierwagen AU - A. Proessdorf AU - M. Niehle AU - F. Grosse AU - A. Trampert AU - M. Klingsporn TI - Oxygen-deficient oxide growth by subliming the oxide source material: The cause of silicide formation in rare earth oxides on silicon JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 13 SP - 3645 PY - 2013/01/01

Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by in vivo x-ray diffraction

@article{ author = { M. Hanke and V. M. Kaganer and O. Bierwagen and M. Niehle and A. Trampert }, title = { Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 203 } }

TY - JOUR AU - M. Hanke AU - V. M. Kaganer AU - O. Bierwagen AU - M. Niehle AU - A. Trampert TI - Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 203 PY - 2012/01/01

Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films

@article{ author = { C. A. Hurni and S. J. Choi and O. Bierwagen and J. S. Speck }, title = { Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 082106 } }

TY - JOUR AU - C. A. Hurni AU - S. J. Choi AU - O. Bierwagen AU - J. S. Speck TI - Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 082106 PY - 2012/01/01

Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface

@article{ author = { O. Bierwagen and T. Nagata and M. E. White and M.-Y. Tsai and J. S. Speck }, title = { Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface }, journal = { Journal of Materials Research }, volume = { 27 }, year = { 2012 }, pages = { 2232 } }

TY - JOUR AU - O. Bierwagen AU - T. Nagata AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck TI - Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 27 SP - 2232 PY - 2012/01/01

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and A. M. Sanchez and O. Bierwagen and M. E. White and S. Gorfman and P. A. Thomas and J. S. Speck and C. F. McConville }, title = { Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 245315 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - A. M. Sanchez AU - O. Bierwagen AU - M. E. White AU - S. Gorfman AU - P. A. Thomas AU - J. S. Speck AU - C. F. McConville TI - Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO₂ on sapphire JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 245315 PY - 2012/01/01

Applicability of molecular beam deposition for the growth of high-k oxides

@article{ author = { M. Grube and D. Martin and W. M. Weber and T. Mikolajick and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides }, journal = { Journal of Vacuum Science and Technology B }, volume = { 29 }, year = { 2011 }, pages = { 01AC05 } }

TY - JOUR AU - M. Grube AU - D. Martin AU - W. M. Weber AU - T. Mikolajick AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 29 SP - 01AC05 PY - 2011/01/01

Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties

@article{ author = { L. Tran and J. Herfort and O. Bierwagen and F. Hatami and W. T. Masselink }, title = { Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties }, journal = { Physica Status Solidi C }, volume = { 6 }, year = { 2009 }, pages = { 1492 } }

TY - JOUR AU - L. Tran AU - J. Herfort AU - O. Bierwagen AU - F. Hatami AU - W. T. Masselink TI - Narrow-gap ferromagnetic semiconductors (In,Mn)Sb on GaAs(001): Growth and properties JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - 6 SP - 1492 PY - 2009/01/01

Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films

@article{ author = { D. Martin and M. Grube and W. M. Weber and J. Rüstig and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 142906 } }

TY - JOUR AU - D. Martin AU - M. Grube AU - W. M. Weber AU - J. Rüstig AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Local charge transport in nanoscale amorphous and crystalline regions of high-k (ZrO₂)_0.8(Al₂O₃)_0.2 thin films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 142906 PY - 2009/01/01

Weak localization in laterally coupled quantum wires

@article{ author = { O. Bierwagen and C. Walther and W. T. Masselink and K.-J. Friedland }, title = { Weak localization in laterally coupled quantum wires }, journal = { Physical Review B: Solid State }, volume = { 67 }, year = { 2003 }, pages = { 195331 } }

TY - JOUR AU - O. Bierwagen AU - C. Walther AU - W. T. Masselink AU - K.-J. Friedland TI - Weak localization in laterally coupled quantum wires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 67 SP - 195331 PY - 2003/01/01

Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells

@article{ author = { K.-J. Friedland and R. Hey and O. Bierwagen and H. Kostial and Y. Hirayama and K. H. Ploog }, title = { Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 13 }, year = { 2002 }, pages = { 642 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - O. Bierwagen AU - H. Kostial AU - Y. Hirayama AU - K. H. Ploog TI - Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 13 SP - 642 PY - 2002/01/01