Dr. Oliver Bierwagen

A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry

@article{ author = { A. Parisini and P. Mazzolini and O. Bierwagen and C. Borelli and K. O. Egbo and A. Sacchi and M. Bosi and L. Seravalli and A. Tahraoui and R. Fornari }, title = { A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry }, journal = { Journal of Vacuum Science and Technology A }, volume = { 40 }, year = { 2022 }, pages = { 042701 } }

TY - JOUR AU - A. Parisini AU - P. Mazzolini AU - O. Bierwagen AU - C. Borelli AU - K. O. Egbo AU - A. Sacchi AU - M. Bosi AU - L. Seravalli AU - A. Tahraoui AU - R. Fornari TI - A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry JF - Journal of Vacuum Science and Technology A JA - J. Vac. Sci. Technol. A J1 - JVSTA VL - 40 SP - 042701 PY - 2022/06/01

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

@article{ author = { K. Tetzner and K. O. Egbo and M. Klupsch and R.-S. Unger and A. Popp and T.-S. Chou and S. Bin Anooz and Z. Galazka and A. Trampert and O. Bierwagen and J Würfl }, title = { SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 112110 } }

TY - JOUR AU - K. Tetzner AU - K. O. Egbo AU - M. Klupsch AU - R.-S. Unger AU - A. Popp AU - T.-S. Chou AU - S. Bin Anooz AU - Z. Galazka AU - A. Trampert AU - O. Bierwagen AU - J Würfl TI - SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 112110 PY - 2022/03/18

Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

@article{ author = { A. Papadogianni and C. Wouters and R. Schewski and J. Feldl and J. Lähnemann and T. Nagata and M. Feneberg and E. Kluth and R. Goldhahn and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity }, journal = { Physical Review Materials }, volume = { 6 }, year = { 2022 }, pages = { 033604 } }

TY - JOUR AU - A. Papadogianni AU - C. Wouters AU - R. Schewski AU - J. Feldl AU - J. Lähnemann AU - T. Nagata AU - M. Feneberg AU - E. Kluth AU - R. Goldhahn AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 6 SP - 033604 PY - 2022/03/14

APL Materials Roadmap – beta-Gallium Oxide Power Electronics

@article{ author = { A. J. Green and J. S. Speck and H. G. Xing and P. Moens and F. Allerstam and K. Gumaelius and T. Neyer and A. Arias-Purdue and V. Mehrotra and A. Kuramata and K. Sasaki and S. Watanabe and K. Kimiyoshi and J. D. Blevins and O. Bierwagen and S. Krishnamoorthy and K. Leedy and A. R. Arehart and A. T. Neal and S. Mou and S. A. Ringel and W. Li and K. D. Chabak and K. Liddy and A. E. Islam and S. Rajan and S. Graham and S. Choi and Z. Cheng and M. Higashiwaki }, title = { APL Materials Roadmap – beta-Gallium Oxide Power Electronics }, journal = { APL Materials }, volume = { 10 }, year = { 2022 }, pages = { 029201 } }

TY - JOUR AU - A. J. Green AU - J. S. Speck AU - H. G. Xing AU - P. Moens AU - F. Allerstam AU - K. Gumaelius AU - T. Neyer AU - A. Arias-Purdue AU - V. Mehrotra AU - A. Kuramata AU - K. Sasaki AU - S. Watanabe AU - K. Kimiyoshi AU - J. D. Blevins AU - O. Bierwagen AU - S. Krishnamoorthy AU - K. Leedy AU - A. R. Arehart AU - A. T. Neal AU - S. Mou AU - S. A. Ringel AU - W. Li AU - K. D. Chabak AU - K. Liddy AU - A. E. Islam AU - S. Rajan AU - S. Graham AU - S. Choi AU - Z. Cheng AU - M. Higashiwaki TI - APL Materials Roadmap – beta-Gallium Oxide Power Electronics JF - APL Materials JA - APL Mater. J1 - APLM VL - 10 SP - 029201 PY - 2022/02/07

The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer

@article{ author = { A. Papadogianni and T. Nagata and O. Bierwagen }, title = { The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 61 }, year = { 2022 }, pages = { 045502 } }

TY - JOUR AU - A. Papadogianni AU - T. Nagata AU - O. Bierwagen TI - The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 61 SP - 045502 PY - 2022/01/25

Ultrawide-bandgap semiconductors: An overview

@article{ author = { M. H. Wong and O. Bierwagen and R. J. Kaplar and H. Umezawa }, title = { Ultrawide-bandgap semiconductors: An overview }, journal = { Journal of Materials Research }, volume = { 36 }, year = { 2021 }, pages = { 4601 } }

TY - JOUR AU - M. H. Wong AU - O. Bierwagen AU - R. J. Kaplar AU - H. Umezawa TI - Ultrawide-bandgap semiconductors: An overview JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 36 SP - 4601 PY - 2021/12/28

Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation

@article{ author = { G. Hoffmann and Zongzhe Cheng and O. Brandt and O. Bierwagen }, title = { Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 111110 } }

TY - JOUR AU - G. Hoffmann AU - Zongzhe Cheng AU - O. Brandt AU - O. Bierwagen TI - Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 111110 PY - 2021/11/15

Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains

@article{ author = { B. M. Janzen and P. Mazzolini and R. Gillen and V. F. S. Peltason and L. P. Grote and J. Maultzsch and R. Fornari and O. Bierwagen and M. R. Wagner }, title = { Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains }, journal = { Journal of Materials Chemistry C }, volume = { 9 }, year = { 2021 }, pages = { 14175 } }

TY - JOUR AU - B. M. Janzen AU - P. Mazzolini AU - R. Gillen AU - V. F. S. Peltason AU - L. P. Grote AU - J. Maultzsch AU - R. Fornari AU - O. Bierwagen AU - M. R. Wagner TI - Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 9 SP - 14175 PY - 2021/09/20

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and M. Feneberg and A. Papadogianni and J. Lähnemann and T. Nagata and O. Bierwagen and R. Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - M. Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - T. Nagata AU - O. Bierwagen AU - R. Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor

@article{ author = { H. Xu and R. Wu and J.-Y. Zhang and W. Han and L. Chen and X. Liang and C. Y. Haw and P. Mazzolini and O. Bierwagen and D.-C. Qi and K. H. L. Zhang }, title = { Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor }, journal = { ACS Applied Electronic Materials }, volume = { tbd }, year = { 2021 }, pages = { tbd } }

TY - JOUR AU - H. Xu AU - R. Wu AU - J.-Y. Zhang AU - W. Han AU - L. Chen AU - X. Liang AU - C. Y. Haw AU - P. Mazzolini AU - O. Bierwagen AU - D.-C. Qi AU - K. H. L. Zhang TI - Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor JF - ACS Applied Electronic Materials JA - J1 - VL - tbd SP - tbd PY - 2021/03/29