Dr. Oliver Bierwagen

The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer

@article{ author = { A. Papadogianni and T. Nagata and O. Bierwagen }, title = { The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { tbd }, year = { 2022 }, pages = { tbd } }

TY - JOUR AU - A. Papadogianni AU - T. Nagata AU - O. Bierwagen TI - The electrical conductivity of cubic (In1-xGax)2O3 films (x ≤ 0.18): Native bulk point defects, Sn-doping, and the surface electron accumulation layer JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - tbd SP - tbd PY - 2022/01/25

Ultrawide-bandgap semiconductors: An overview

@article{ author = { M. H. Wong and O. Bierwagen and R. J. Kaplar and H. Umezawa }, title = { Ultrawide-bandgap semiconductors: An overview }, journal = { Journal of Materials Research }, volume = { 36 }, year = { 2021 }, pages = { 4601 } }

TY - JOUR AU - M. H. Wong AU - O. Bierwagen AU - R. J. Kaplar AU - H. Umezawa TI - Ultrawide-bandgap semiconductors: An overview JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 36 SP - 4601 PY - 2021/12/28

Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation

@article{ author = { G. Hoffmann and Zongzhe Cheng and O. Brandt and O. Bierwagen }, title = { Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 111110 } }

TY - JOUR AU - G. Hoffmann AU - Zongzhe Cheng AU - O. Brandt AU - O. Bierwagen TI - Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 111110 PY - 2021/11/15

Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains

@article{ author = { B. M. Janzen and P. Mazzolini and R. Gillen and V. F. S. Peltason and L. P. Grote and J. Maultzsch and R. Fornari and O. Bierwagen and M. R. Wagner }, title = { Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains }, journal = { Journal of Materials Chemistry C }, volume = { 9 }, year = { 2021 }, pages = { 14175 } }

TY - JOUR AU - B. M. Janzen AU - P. Mazzolini AU - R. Gillen AU - V. F. S. Peltason AU - L. P. Grote AU - J. Maultzsch AU - R. Fornari AU - O. Bierwagen AU - M. R. Wagner TI - Comprehensive Raman study of orthorhombic kappa/epsilon − Ga2O3 and the impact of rotational domains JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 9 SP - 14175 PY - 2021/09/20

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and M. Feneberg and A. Papadogianni and J. Lähnemann and T. Nagata and O. Bierwagen and R. Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - M. Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - T. Nagata AU - O. Bierwagen AU - R. Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor

@article{ author = { H. Xu and R. Wu and J.-Y. Zhang and W. Han and L. Chen and X. Liang and C. Y. Haw and P. Mazzolini and O. Bierwagen and D.-C. Qi and K. H. L. Zhang }, title = { Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor }, journal = { ACS Applied Electronic Materials }, volume = { tbd }, year = { 2021 }, pages = { tbd } }

TY - JOUR AU - H. Xu AU - R. Wu AU - J.-Y. Zhang AU - W. Han AU - L. Chen AU - X. Liang AU - C. Y. Haw AU - P. Mazzolini AU - O. Bierwagen AU - D.-C. Qi AU - K. H. L. Zhang TI - Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor JF - ACS Applied Electronic Materials JA - J1 - VL - tbd SP - tbd PY - 2021/03/29

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

@article{ author = { P. Vogt and F. V. E. Hensling and K. Azizie and C. S. Chang and D. Turner and J. Park and J. P. McCandless and H. Paik and B. J. Bocklund and G. Hoffmann and O. Bierwagen and D. Jena and H. G. Xing and S. Mou and D. A. Muller and S.-L. Shang and Z.-K. Liu and D. G. Schlom }, title = { Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 031101 } }

TY - JOUR AU - P. Vogt AU - F. V. E. Hensling AU - K. Azizie AU - C. S. Chang AU - D. Turner AU - J. Park AU - J. P. McCandless AU - H. Paik AU - B. J. Bocklund AU - G. Hoffmann AU - O. Bierwagen AU - D. Jena AU - H. G. Xing AU - S. Mou AU - D. A. Muller AU - S.-L. Shang AU - Z.-K. Liu AU - D. G. Schlom TI - Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 031101 PY - 2021/03/03

Isotopic study of Raman active phonon modes in beta-Ga2O3

@article{ author = { B. M. Janzen and P. Mazzolini and R. Gillen and A. Falkenstein and M. Martin and H. Tornatzky and J. Maultzsch and O. Bierwagen and M. R. Wagner }, title = { Isotopic study of Raman active phonon modes in beta-Ga2O3 }, journal = { Journal of Materials Chemistry C }, volume = { 9 }, year = { 2021 }, pages = { 2311 } }

TY - JOUR AU - B. M. Janzen AU - P. Mazzolini AU - R. Gillen AU - A. Falkenstein AU - M. Martin AU - H. Tornatzky AU - J. Maultzsch AU - O. Bierwagen AU - M. R. Wagner TI - Isotopic study of Raman active phonon modes in beta-Ga2O3 JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 9 SP - 2311 PY - 2021/01/11

SnO/beta-Ga2O3 vertical pn heterojunction diodes

@article{ author = { M. Budde and D. Splith and P. Mazzolini and A. Tahraoui and J. Feldl and M. Ramsteiner and H. von Wenckstern and M. Grundmann and O. Bierwagen }, title = { SnO/beta-Ga2O3 vertical pn heterojunction diodes }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 252106 } }

TY - JOUR AU - M. Budde AU - D. Splith AU - P. Mazzolini AU - A. Tahraoui AU - J. Feldl AU - M. Ramsteiner AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen TI - SnO/beta-Ga2O3 vertical pn heterojunction diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 252106 PY - 2020/12/22

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{ author = { M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and F. Hatami and W. T. Masselink and M. Ramsteiner and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 124602 } }

TY - JOUR AU - M. Budde AU - P. Mazzolini AU - J. Feldl AU - C. Golz AU - T. Nagata AU - S. Ueda AU - G. Hoffmann AU - F. Hatami AU - W. T. Masselink AU - M. Ramsteiner AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 124602 PY - 2020/12/16