Dr. Oliver Bierwagen

The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface

@article{ author = { V. Jovic and S. Moser and A. Papadogianni and R.J. Koch and A. Rossi and C. Jozwiak and A. Bostwick and E. Rotenberg and J.V. Kennedy and O. Bierwagen and K.E. Smith }, title = { The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface }, journal = { Small }, volume = { tbd }, year = { 2019 }, pages = { tbd } }

TY - JOUR AU - V. Jovic AU - S. Moser AU - A. Papadogianni AU - R.J. Koch AU - A. Rossi AU - C. Jozwiak AU - A. Bostwick AU - E. Rotenberg AU - J.V. Kennedy AU - O. Bierwagen AU - K.E. Smith TI - The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface JF - Small JA - small J1 - VL - tbd SP - tbd PY - 2019/09/05

Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101)

@article{ author = { C.E. Simion and F. Schipani and A. Papadogianni and A. Stanoiu and M. Budde and A. Oprea and U. Weimar and O. Bierwagen and N. Barsan }, title = { Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) }, journal = { ACS Sensors }, volume = { tbd }, year = { 2019 }, pages = { tbd } }

TY - JOUR AU - C.E. Simion AU - F. Schipani AU - A. Papadogianni AU - A. Stanoiu AU - M. Budde AU - A. Oprea AU - U. Weimar AU - O. Bierwagen AU - N. Barsan TI - Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) JF - ACS Sensors JA - J1 - VL - tbd SP - tbd PY - 2019/08/15

Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and S. Ueda and M. Imura and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { 080903 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - S. Ueda AU - M. Imura AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - 080903 PY - 2019/07/12

Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3

@article{ author = { J. Michel and D. Splith and J. Rombach and A. Papadogianni and T. Berthold and S. Krischok and M. Grundmann and O. Bierwagen and H. von Wenckstern and M. Himmerlich }, title = { Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 }, journal = { ACS Applied Materials and Interfaces }, volume = { 11 }, year = { 2019 }, pages = { 27073 } }

TY - JOUR AU - J. Michel AU - D. Splith AU - J. Rombach AU - A. Papadogianni AU - T. Berthold AU - S. Krischok AU - M. Grundmann AU - O. Bierwagen AU - H. von Wenckstern AU - M. Himmerlich TI - Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 11 SP - 27073 PY - 2019/07/04

Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and M. Imura and S. Ueda and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { SDDG06 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - M. Imura AU - S. Ueda AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - SDDG06 PY - 2019/05/21

Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2

@article{ author = { P. Vogt and O. Bierwagen }, title = { Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 120401(R) } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - 2475-9953 VL - 2 SP - 120401(R) PY - 2018/12/20

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy

@article{ author = { P. Mazzolini and P. Vogt and R. Schewski and C. Wouters and M. Albrecht and O. Bierwagen }, title = { Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022511 } }

TY - JOUR AU - P. Mazzolini AU - P. Vogt AU - R. Schewski AU - C. Wouters AU - M. Albrecht AU - O. Bierwagen TI - Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy JF - APL Materials JA - APL Mat. J1 - APLM VL - 7 SP - 022511 PY - 2018/12/14

Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

@article{ author = { M. Feneberg and C. Lidig and M.E. White and M.Y. Tsai and J.S. Speck and O. Bierwagen and Z. Galazka and R. Goldhahn }, title = { Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022508 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - M.E. White AU - M.Y. Tsai AU - J.S. Speck AU - O. Bierwagen AU - Z. Galazka AU - R. Goldhahn TI - Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift JF - APL Materials JA - APL Mat. J1 - APLM VL - 7 SP - 022508 PY - 2018/12/13

Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates

@article{ author = { M.P. Semtsiv and S.S. Kurlov and D. Alcer and Y. Matsuoka and J.-F. Kischkat and O. Bierwagen and W.T. Masselink }, title = { Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 121110 } }

TY - JOUR AU - M.P. Semtsiv AU - S.S. Kurlov AU - D. Alcer AU - Y. Matsuoka AU - J.-F. Kischkat AU - O. Bierwagen AU - W.T. Masselink TI - Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 121110 PY - 2018/09/19

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

@article{ author = { M. Budde and C. Tschammer and P. Franz and J. Feldl and M. Ramsteiner and R. Goldhahn and M. Feneberg and N. Barsan and A. Oprea and O. Bierwagen }, title = { Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 195301 } }

TY - JOUR AU - M. Budde AU - C. Tschammer AU - P. Franz AU - J. Feldl AU - M. Ramsteiner AU - R. Goldhahn AU - M. Feneberg AU - N. Barsan AU - A. Oprea AU - O. Bierwagen TI - Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 195301 PY - 2018/05/15