Dr. Thomas Auzelle

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé Vílchez and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé Vílchez AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and S. Brackmann and S. Hillebrandt and W. Kowalsky and E. Mankel and R. Lovrincic and S. Fernández-Garrido }, title = { Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps }, journal = { Applied Surface Science }, volume = { 495 }, year = { 2019 }, pages = { 143514 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - S. Brackmann AU - S. Hillebrandt AU - W. Kowalsky AU - E. Mankel AU - R. Lovrincic AU - S. Fernández-Garrido TI - Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 495 SP - 143514 PY - 2019/08/02

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

@article{ author = { S. Fernández-Garrido and T. Auzelle and J. Lähnemann and K. Wimmer and A. Tahraoui and O. Brandt }, title = { Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation }, journal = { Nanoscale Advances }, volume = { 1 }, year = { 2019 }, pages = { 1893 } }

TY - JOUR AU - S. Fernández-Garrido AU - T. Auzelle AU - J. Lähnemann AU - K. Wimmer AU - A. Tahraoui AU - O. Brandt TI - Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 1 SP - 1893 PY - 2019/03/12

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. v. Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. v. Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition

@article{ author = { T. Auzelle and G. Calabrese and S. Fernández-Garrido }, title = { Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 013402 } }

TY - JOUR AU - T. Auzelle AU - G. Calabrese AU - S. Fernández-Garrido TI - Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - 2475-9953 VL - 3 SP - 013402 PY - 2019/01/09

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

@article{ author = { P. Corfdir and G. Calabrese and A. Laha and T. Auzelle and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 3202 } }

TY - JOUR AU - P. Corfdir AU - G. Calabrese AU - A. Laha AU - T. Auzelle AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 3202 PY - 2018/05/18