Dr. Thomas Auzelle

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 1718 } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 1718 PY - 2021/05/12

External control of GaN band bending using phosphanate self-assembled monolayers

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and C. Sinito and S. Brackmann and W. Kowalsky and E. Mankel and O. Brandt and R. Lovrincic and S. Fernández-Garrido }, title = { External control of GaN band bending using phosphanate self-assembled monolayers }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 4626 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - C. Sinito AU - S. Brackmann AU - W. Kowalsky AU - E. Mankel AU - O. Brandt AU - R. Lovrincic AU - S. Fernández-Garrido TI - External control of GaN band bending using phosphanate self-assembled monolayers JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 4626 PY - 2021/01/13

Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

@article{ author = { L. Jaloustre and S. Le-Denmat and T. Auzelle and M. Azadmand and L. Geelhaar and F. Dahlem and R. Songmuang }, title = { Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires }, journal = { ACS Applied Nano Materials }, volume = { 4 }, year = { 2021 }, pages = { 43 } }

TY - JOUR AU - L. Jaloustre AU - S. Le-Denmat AU - T. Auzelle AU - M. Azadmand AU - L. Geelhaar AU - F. Dahlem AU - R. Songmuang TI - Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 4 SP - 43 PY - 2021/01/01

Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure

@article{ author = { Y. Zhao and Z. Xing and L. Geelhaar and J. Zhang and W. Yang and T. Auzelle and Y. Wu and L. Bian and S. Lu }, title = { Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 9943 } }

TY - JOUR AU - Y. Zhao AU - Z. Xing AU - L. Geelhaar AU - J. Zhang AU - W. Yang AU - T. Auzelle AU - Y. Wu AU - L. Bian AU - S. Lu TI - Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 9943 PY - 2020/09/23

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Electronic Properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and S. Brackmann and S. Hillebrandt and W. Kowalsky and E. Mankel and R. Lovrincic and S. Fernández-Garrido }, title = { Electronic Properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps }, journal = { Applied Surface Science }, volume = { 495 }, year = { 2019 }, pages = { 143514 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - S. Brackmann AU - S. Hillebrandt AU - W. Kowalsky AU - E. Mankel AU - R. Lovrincic AU - S. Fernández-Garrido TI - Electronic Properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 495 SP - 143514 PY - 2019/08/02

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

@article{ author = { S. Fernández-Garrido and T. Auzelle and J. Lähnemann and K. Wimmer and A. Tahraoui and O. Brandt }, title = { Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation }, journal = { Nanoscale Advances }, volume = { 1 }, year = { 2019 }, pages = { 1893 } }

TY - JOUR AU - S. Fernández-Garrido AU - T. Auzelle AU - J. Lähnemann AU - K. Wimmer AU - A. Tahraoui AU - O. Brandt TI - Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 1 SP - 1893 PY - 2019/03/12

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. van Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. van Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition

@article{ author = { T. Auzelle and G. Calabrese and S. Fernández-Garrido }, title = { Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 013402 } }

TY - JOUR AU - T. Auzelle AU - G. Calabrese AU - S. Fernández-Garrido TI - Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 013402 PY - 2019/01/09