Scientist
phone: +49 30 20377 337
room: 0726
email: auzelle@pdi-berlin.de
Department: Epitaxy
Core research areas: III-V nanowires for optoelectronics
1 | Author | Y. Zhao , Z. Xing , L. Geelhaar , J. Zhang , W. Yang , T. Auzelle , Y. Wu , L. Bian , S. Lu |
Title |
Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure |
|
Source | ACS Appl. Nano Mater. , 3 , 9943 ( 2020 ) | |
DOI : 10.1021/acsanm.0c01970 | Cite : Bibtex RIS |
2 | Author | M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar |
Title |
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films |
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Source | Phys. Status Solidi-Rapid Res. Lett. , 14 , 1900615 ( 2020 ) | |
DOI : 10.1002/pssr.201900615 | Download arXiv: 1910.07391 | Cite : Bibtex RIS |
3 | Author | C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt |
Title |
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy |
|
Source | Nano Lett. , 19 , 5938 ( 2019 ) | |
DOI : 10.1021/acs.nanolett.9b01521 | Download arXiv: 1905.04090 | Cite : Bibtex RIS |
4 | Author | T. Auzelle , F. Ullrich , S. Hietzschold , S. Brackmann , S. Hillebrandt , W. Kowalsky , E. Mankel , R. Lovrincic , S. Fernández-Garrido |
Title |
Electronic Properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps |
|
Source | Appl. Surf. Sci. , 495 , 143514 ( 2019 ) | |
DOI : 10.1016/j.apsusc.2019.07.256 | Cite : Bibtex RIS |
5 | Author | S. Fernández-Garrido , T. Auzelle , J. Lähnemann , K. Wimmer , A. Tahraoui , O. Brandt |
Title |
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation |
|
Source | Nanoscale Adv. , 1 , 1893 ( 2019 ) | |
DOI : 10.1039/c8na00369f | Download arXiv: 1905.04948 | Cite : Bibtex RIS |
6 | Author | G. Calabrese , G. Gao , D. van Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Title |
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 |
|
Source | Nanotechnology , 30 , 114001 ( 2019 ) | |
DOI : 10.1088/1361-6528/aaf9c5 | Cite : Bibtex RIS |
7 | Author | T. Auzelle , G. Calabrese , S. Fernández-Garrido |
Title |
Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition |
|
Source | Phys. Rev. Mater. , 3 , 013402 ( 2019 ) | |
DOI : 10.1103/PhysRevMaterials.3.013402 | Cite : Bibtex RIS |
8 | Author | P. Corfdir , G. Calabrese , A. Laha , T. Auzelle , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Title |
Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry |
|
Source | CrystEngComm , 20 , 3202 ( 2018 ) | |
DOI : 10.1039/C8CE00431E | Cite : Bibtex RIS |