Dr. Manfred Ramsteiner

Room-temperature spin injection from Fe into GaAs

@article{ author = { H. J. Zhu and M. Ramsteiner and H. Kostial and M. Wassermeier and H.-P. Schönherr and K. H. Ploog }, title = { Room-temperature spin injection from Fe into GaAs }, journal = { Physical Review Letters }, volume = { 87 }, year = { 2001 }, pages = { 016601 } }

TY - JOUR AU - H. J. Zhu AU - M. Ramsteiner AU - H. Kostial AU - M. Wassermeier AU - H.-P. Schönherr AU - K. H. Ploog TI - Room-temperature spin injection from Fe into GaAs JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 87 SP - 016601 PY - 2001/01/01

Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films

@article{ author = { U. Hilpert and J. Schreiber and L. Worschech and L. Höring and M. Ramsteiner and W. Ossau and G. Landwehr }, title = { Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films }, journal = { Journal of Physics: Condensed Matter }, volume = { 12 }, year = { 2000 }, pages = { 10169 } }

TY - JOUR AU - U. Hilpert AU - J. Schreiber AU - L. Worschech AU - L. Höring AU - M. Ramsteiner AU - W. Ossau AU - G. Landwehr TI - Optical characterization of isolated Se(g)-type misfit dislocations and their influence on strain relief in thin ZnSe films JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 12 SP - 10169 PY - 2000/01/01

Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. Q. Zhu and D. X. Shen and A. Z. Li and P. Metev and L. J. Guido }, title = { Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition }, journal = { Journal of Crystal Growth }, volume = { 212 }, year = { 2000 }, pages = { 56 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. Q. Zhu AU - D. X. Shen AU - A. Z. Li AU - P. Metev AU - L. J. Guido TI - Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 212 SP - 56 PY - 2000/01/01

Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. H. Li and D. X. Shen and Z. Q. Zhu }, title = { Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures }, journal = { Journal of Applied Physics }, volume = { 88 }, year = { 2000 }, pages = { 4075 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. H. Li AU - D. X. Shen AU - Z. Q. Zhu TI - Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 88 SP - 4075 PY - 2000/01/01

Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

@article{ author = { R. Nötzel and J. Fricke and U. Jahn and M. Ramsteiner and H.-P. Schönherr and K. H. Ploog }, title = { Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 183 } }

TY - JOUR AU - R. Nötzel AU - J. Fricke AU - U. Jahn AU - M. Ramsteiner AU - H.-P. Schönherr AU - K. H. Ploog TI - Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 183 PY - 2000/01/01

Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy

@article{ author = { M. Ramsteiner and R. Zhang and R. Tsui and K. Shiralagi and J. Tresek and H. Goronkin and K. H. Ploog }, title = { Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 243 } }

TY - JOUR AU - M. Ramsteiner AU - R. Zhang AU - R. Tsui AU - K. Shiralagi AU - J. Tresek AU - H. Goronkin AU - K. H. Ploog TI - Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 243 PY - 2000/01/01

In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells

@article{ author = { B. Rau and P. Waltereit and O. Brandt and M. Ramsteiner and K. H. Ploog and J. Puls and F. Henneberger }, title = { In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells }, journal = { Applied Physics Letters }, volume = { 77 }, year = { 2000 }, pages = { 3343 } }

TY - JOUR AU - B. Rau AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - K. H. Ploog AU - J. Puls AU - F. Henneberger TI - In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 77 SP - 3343 PY - 2000/01/01

Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001)

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and J. Ringling and A. Trampert and K. H. Ploog }, title = { Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001) }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 453 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - J. Ringling AU - A. Trampert AU - K. H. Ploog TI - Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001) JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 453 PY - 2000/01/01

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

@article{ author = { P. Waltereit and O. Brandt and A. Trampert and H.T. Grahn and J. Menniger and M. Ramsteiner and M. Reiche and K. H. Ploog }, title = { Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes }, journal = { Nature }, volume = { 406 }, year = { 2000 }, pages = { 865 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Ramsteiner AU - M. Reiche AU - K. H. Ploog TI - Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes JF - Nature JA - Nature J1 - Nat VL - 406 SP - 865 PY - 2000/01/01

Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and A. Trampert and H.T. Grahn and J. Menniger and M. Reiche and R. Uecker and P. Reiche and K. H. Ploog }, title = { Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides }, journal = { Physica Status Solidi A }, volume = { 180 }, year = { 2000 }, pages = { 133 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Reiche AU - R. Uecker AU - P. Reiche AU - K. H. Ploog TI - Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 180 SP - 133 PY - 2000/01/01