Dr. Manfred Ramsteiner

Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures

@article{ author = { K. H. Ploog and M. Ramsteiner and H.-P. Schönherr and H. J. Zhu }, title = { Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures }, journal = { Proceedings of the 28th International Symposium on Compound Semiconductors; edited by Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, IOP Conf. Ser. }, volume = { 170 }, year = { 2002 }, pages = { 261 } }

TY - JOUR AU - K. H. Ploog AU - M. Ramsteiner AU - H.-P. Schönherr AU - H. J. Zhu TI - Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures JF - Proceedings of the 28th International Symposium on Compound Semiconductors; edited by Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, IOP Conf. Ser. JA - Proc. ISCS 28 J1 - VL - 170 SP - 261 PY - 2002/01/01

Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor

@article{ author = { V. F. Sapega and M. Moreno and M. Ramsteiner and L. Däweritz and K. H. Ploog }, title = { Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor }, journal = { Physical Review B: Solid State }, volume = { 66 }, year = { 2002 }, pages = { 075217 } }

TY - JOUR AU - V. F. Sapega AU - M. Moreno AU - M. Ramsteiner AU - L. Däweritz AU - K. H. Ploog TI - Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 66 SP - 075217 PY - 2002/01/01

Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots

@article{ author = { M. Schmidbauer and F. Hatami and M. Hanke and P. Schäfer and K. Braune and W. T. Masselink and R. Köhler and M. Ramsteiner }, title = { Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots }, journal = { Physical Review B: Solid State }, volume = { 65 }, year = { 2002 }, pages = { 125320 } }

TY - JOUR AU - M. Schmidbauer AU - F. Hatami AU - M. Hanke AU - P. Schäfer AU - K. Braune AU - W. T. Masselink AU - R. Köhler AU - M. Ramsteiner TI - Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 65 SP - 125320 PY - 2002/01/01

Pulsed laser crystallization of SiGe alloys on GaAs

@article{ author = { F. Dondeo and P. V. Santos and M. Ramsteiner and D. Comedi and M. A. A. Pudenzi and I. Chambouleyron }, title = { Pulsed laser crystallization of SiGe alloys on GaAs }, journal = { Brazilian Journal of Physics }, volume = { 32 }, year = { 2002 }, pages = { 376 } }

TY - JOUR AU - F. Dondeo AU - P. V. Santos AU - M. Ramsteiner AU - D. Comedi AU - M. A. A. Pudenzi AU - I. Chambouleyron TI - Pulsed laser crystallization of SiGe alloys on GaAs JF - Brazilian Journal of Physics JA - Braz. J. Phys. J1 - BJP VL - 32 SP - 376 PY - 2002/01/01

Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on γ-LiAlO₂(100)

@article{ author = { O. Brandt and P. Waltereit and S. Ghosh and A. Trampert and M. Ramsteiner and H.T. Grahn and K. H. Ploog }, title = { Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) }, journal = { Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and P. K. Basu (Allied Publishers Ltd., New Delhi, 2001) }, volume = { }, year = { 2001 }, pages = { 943 } }

TY - JOUR AU - O. Brandt AU - P. Waltereit AU - S. Ghosh AU - A. Trampert AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog TI - Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) JF - Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and P. K. Basu (Allied Publishers Ltd., New Delhi, 2001) JA - Proc. IWPSD 11 J1 - - VL - SP - 943 PY - 2001/01/01

Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy

@article{ author = { M. Giehler and M. Ramsteiner and P. Waltereit and O. Brandt and K. H. Ploog and H. Obloh }, title = { Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 89 }, year = { 2001 }, pages = { 3634 } }

TY - JOUR AU - M. Giehler AU - M. Ramsteiner AU - P. Waltereit AU - O. Brandt AU - K. H. Ploog AU - H. Obloh TI - Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 89 SP - 3634 PY - 2001/01/01

Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films

@article{ author = { U. Hilpert and L. Worschech and L. Höring and M. Ramsteiner and B. König and J. Schreiber and W. Ossau and G. Landwehr }, title = { Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 1545 } }

TY - JOUR AU - U. Hilpert AU - L. Worschech AU - L. Höring AU - M. Ramsteiner AU - B. König AU - J. Schreiber AU - W. Ossau AU - G. Landwehr TI - Optical characterization of single misfit dislocations and their interaction with point defects in thin ZnSe films JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 1545 PY - 2001/01/01

Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

@article{ author = { W. Ma and R. Nötzel and A. Trampert and M. Ramsteiner and H. Zhu and H.-P. Schönherr and K. H. Ploog }, title = { Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) }, journal = { Applied Physics Letters }, volume = { 78 }, year = { 2001 }, pages = { 1297 } }

TY - JOUR AU - W. Ma AU - R. Nötzel AU - A. Trampert AU - M. Ramsteiner AU - H. Zhu AU - H.-P. Schönherr AU - K. H. Ploog TI - Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 78 SP - 1297 PY - 2001/01/01

Patterning of epitaxial MnAs on GaAs by direct optical writing

@article{ author = { M. Ramsteiner and H. J. Zhu and L. Däweritz }, title = { Patterning of epitaxial MnAs on GaAs by direct optical writing }, journal = { Applied Physics Letters }, volume = { 79 }, year = { 2001 }, pages = { 2411 } }

TY - JOUR AU - M. Ramsteiner AU - H. J. Zhu AU - L. Däweritz TI - Patterning of epitaxial MnAs on GaAs by direct optical writing JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 79 SP - 2411 PY - 2001/01/01

Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells

@article{ author = { B. Rau and J. Puls and F. Henneberger and P. Waltereit and O. Brandt and M. Ramsteiner and K. H. Ploog }, title = { Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 4283 }, year = { 2001 }, pages = { 96 } }

TY - JOUR AU - B. Rau AU - J. Puls AU - F. Henneberger AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - K. H. Ploog TI - Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 4283 SP - 96 PY - 2001/01/01